Vishay Semiconductor Diodes Division 產品

VS-10RIA120

Vishay Semiconductor Diodes Division

SCR 1200V 10A TO-48

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 60mA
• Voltage - On State (Vtm) (Max): 1.75V
• Current - On State (It (AV)) (Max): 10A
• Current - On State (It (RMS)) (Max): 25A
• Current - Hold (Ih) (Max): 130mA
• Current - Off State (Max): 10mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 225A, 240A
• SCR Type: Standard Recovery
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-208AA, TO-48-3, Stud
• Supplier Device Package: TO-208AA (TO-48)

封裝: TO-208AA, TO-48-3, Stud

VS-VSKT230-12PBF

Vishay Semiconductor Diodes Division

MODULE DIODE SCR 230A MAGN-A-PAK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 230A
• Current - On State (It (RMS)) (Max): 510A
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A, 7850A
• Current - Hold (Ih) (Max): 500mA
• Operating Temperature: -40°C ~ 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK

封裝: MAGN-A-PAK

VS-T50RIA80

Vishay Semiconductor Diodes Division

SCR PHASE CONT 800V 50A D-55

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 50A
• Current - On State (It (RMS)) (Max): 80A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: D-55 T-Module

封裝: D-55 T-Module

MMSZ5258B-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封裝: SOD-123

GDZ30B-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 30V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±4%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: SC-76, SOD-323

MMSZ4702-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封裝: SOD-123

BZX84C5V1-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 5.1V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

BZD27B180P-M3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 180V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 400 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 130V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

BZD27C16P-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 12V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

封裝: DO-219AB

GP10J-051M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

1N3614GP-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封裝: -

RGP10JEHE3/91

Vishay Semiconductor Diodes Division

DIODE SW 1A 600V 250NS DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

VS-T70HF100

Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 70A D-55

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-55 T-Module
• Supplier Device Package: D-55
• Operating Temperature - Junction: -

封裝: D-55 T-Module

V20PL60-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5.5A
• Voltage - Forward (Vf) (Max) @ If: 590mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-277, 3-PowerDFN

SS19-E3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -

封裝: DO-214AC, SMA

1N4933-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

SE10DJHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A TO263AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Capacitance @ Vr, F: 67pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
• Supplier Device Package: TO-263AC (SMPD)
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab) Variant

BYS12-90-E3/TR3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1.5A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

VIT5202-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 5A TO262AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA
• Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

VS-16CTU04-1PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 400V TO262

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262-3

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

UGF18BCT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 100V 18A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 18A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封裝: TO-220-3 Full Pack, Isolated Tab

TMPG06-24-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 19.4VWM 34.2VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 19.4V
• Voltage - Breakdown (Min): 21.6V
• Voltage - Clamping (Max) @ Ipp: 34.2V
• Current - Peak Pulse (10/1000µs): 11.5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06

封裝: MPG06, Axial

P4KE13-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 10.5VWM 19VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10.5V
• Voltage - Breakdown (Min): 11.7V
• Voltage - Clamping (Max) @ Ipp: 19V
• Current - Peak Pulse (10/1000µs): 21.1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

3KASMC24HE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 43VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 43V
• Current - Peak Pulse (10/1000µs): 69.8A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC

TPC13CAHM3/I

Vishay Semiconductor Diodes Division

TVS DIODE 11.1VWM 18.2VC TO-277A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11.1V
• Voltage - Breakdown (Min): 12.4V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 82.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

封裝: TO-277, 3-PowerDFN

SMBG11A-E3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 18.2VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

封裝: DO-215AA, SMB Gull Wing

SMBJ43A-M3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 43VWM 69.4VC DO-215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 8.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

封裝: DO-214AA, SMB

SMC5K12AHM3/H

Vishay Semiconductor Diodes Division

TVS DIODE 12VWM 19.9VC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 251.3A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC