頁 4 - Vishay Semiconductor Diodes Division 產品 - 電晶體 - IGBT - 模組 | 黑森爾電子
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Vishay Semiconductor Diodes Division 產品 - 電晶體 - IGBT - 模組

記錄 129
頁  4/5
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製造商
描述
封裝
庫存
數量
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
VS-GB50LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 84A 431W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 84A
  • Power - Max: 431W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封裝: SOT-227-4, miniBLOC
庫存5,184
Single
1200V
84A
431W
2.8V @ 15V, 50A
50µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB100TP120U
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 735W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 735W
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
封裝: INT-A-Pak
庫存4,992
Half Bridge
1200V
150A
735W
3.9V @ 15V, 100A
2mA
4.3nF @ 25V
Standard
No
-
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GB100DA60UP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 125A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封裝: SOT-227-4, miniBLOC
庫存7,840
Single
600V
125A
447W
2.8V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GA200SA60SP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 781W
  • Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封裝: SOT-227-4, miniBLOC
庫存3,504
Single
600V
-
781W
1.3V @ 15V, 100A
1mA
16.25nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GA200HS60S1PBF
Vishay Semiconductor Diodes Division

IGBT 600V 480A 830W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 480A
  • Power - Max: 830W
  • Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 32.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
封裝: INT-A-Pak
庫存4,208
Half Bridge
600V
480A
830W
1.21V @ 15V, 200A
1mA
32.5nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GA100TS60SFPBF
Vishay Semiconductor Diodes Division

IGBT 600V 220A 780W INT-A-PAK

  • IGBT Type: PT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
封裝: INT-A-Pak
庫存5,824
Half Bridge
600V
220A
780W
1.28V @ 15V, 100A
1mA
16.25nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GA100TS120UPBF
Vishay Semiconductor Diodes Division

IGBT 1200V 182A 520W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 182A
  • Power - Max: 520W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 18.67nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
封裝: INT-A-Pak
庫存5,536
Half Bridge
1200V
182A
520W
3V @ 15V, 100A
1mA
18.67nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GA100NA60UP
Vishay Semiconductor Diodes Division

IGBT 600V 100A 250W SOT-227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 7.4nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封裝: SOT-227-4, miniBLOC
庫存6,112
Single
600V
100A
250W
2.1V @ 15V, 50A
250µA
7.4nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-EMG050J60N
Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 88A
  • Power - Max: 338W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK2
  • Supplier Device Package: EMIPAK2
封裝: EMIPAK2
庫存3,776
Half Bridge
600V
88A
338W
2.1V @ 15V, 50A
100µA
9.5nF @ 30V
Standard
Yes
150°C (TJ)
Chassis Mount
EMIPAK2
EMIPAK2
VS-EMF050J60U
Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

  • IGBT Type: -
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 88A
  • Power - Max: 338W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK2
  • Supplier Device Package: EMIPAK2
封裝: EMIPAK2
庫存3,536
Three Level Inverter
600V
88A
338W
2.1V @ 15V, 50A
100µA
9.5nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
EMIPAK2
EMIPAK2
VS-CPV363M4KPBF
Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Power - Max: 36W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 0.74nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
封裝: 19-SIP (13 Leads), IMS-2
庫存4,528
-
600V
11A
36W
2.1V @ 15V, 6A
250µA
0.74nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
GB35XF120K
Vishay Semiconductor Diodes Division

MODULE IGBT 1200V 35A ECONO2 6PK

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Power - Max: 284W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 3.475nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECONO2
  • Supplier Device Package: -
封裝: ECONO2
庫存6,144
Three Phase Inverter
1200V
50A
284W
3V @ 15V, 50A
100µA
3.475nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
ECONO2
-
50MT060ULS
Vishay Semiconductor Diodes Division

IGBT UFAST 600V 100A MTP

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 445W
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 14.7nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 10-MTP
  • Supplier Device Package: 10-MTP
封裝: 10-MTP
庫存5,792
Single
600V
100A
445W
2.55V @ 15V, 100A
250µA
14.7nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
10-MTP
10-MTP
50MT060WH
Vishay Semiconductor Diodes Division

IGBT WARP 600V 114A MTP

  • IGBT Type: PT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 114A
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 400µA
  • Input Capacitance (Cies) @ Vce: 7.1nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 12-MTP Module
  • Supplier Device Package: 12-MTP
封裝: 12-MTP Module
庫存4,672
Half Bridge
600V
114A
658W
3.2V @ 15V, 100A
400µA
7.1nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
12-MTP Module
12-MTP
GA200SA60S
Vishay Semiconductor Diodes Division

IGBT STD 600V 100A SOT227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 630W
  • Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封裝: SOT-227-4, miniBLOC
庫存4,832
Single
600V
200A
630W
1.3V @ 15V, 100A
1mA
16.25nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
GA200SA60U
Vishay Semiconductor Diodes Division

IGBT UFAST 600V 100A SOT227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封裝: SOT-227-4, miniBLOC
庫存3,168
Single
600V
200A
500W
1.9V @ 15V, 100A
1mA
16.5nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
GA400TD25S
Vishay Semiconductor Diodes Division

IGBT FAST 250V 400A INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 1350W
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 36nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (3 + 8)
  • Supplier Device Package: Dual INT-A-PAK
封裝: Dual INT-A-PAK (3 + 8)
庫存3,280
Half Bridge
250V
400A
1350W
1.6V @ 15V, 400A
500µA
36nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Dual INT-A-PAK (3 + 8)
Dual INT-A-PAK
CPV364M4F
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 15A IMS-2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27A
  • Power - Max: 63W
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 27A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 2.2nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
封裝: 19-SIP (13 Leads), IMS-2
庫存7,408
Three Phase Inverter
600V
27A
63W
1.6V @ 15V, 27A
250µA
2.2nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
CPV363M4F
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 9A IMS-2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Power - Max: 36W
  • Vce(on) (Max) @ Vge, Ic: 1.63V @ 15V, 16A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.1nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
封裝: 19-SIP (13 Leads), IMS-2
庫存3,600
Three Phase Inverter
600V
16A
36W
1.63V @ 15V, 16A
250µA
1.1nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
VS-GB300TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 530A 2119W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 530A
  • Power - Max: 2119W
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 25.3nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封裝: Double INT-A-PAK (3 + 4)
庫存3,776
Half Bridge
1200V
530A
2119W
3.6V @ 15V, 300A
5mA
25.3nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB300TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 500A 1645W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 500A
  • Power - Max: 1645W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封裝: Double INT-A-PAK (3 + 4)
庫存5,024
Half Bridge
1200V
500A
1645W
2.45V @ 15V, 300A
5mA
21.2nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GT300FD060N
Vishay Semiconductor Diodes Division

IGBT 600V 379A 1250W DIAP

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 379A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 23.3nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (4 + 8)
  • Supplier Device Package: Dual INT-A-PAK
封裝: Dual INT-A-PAK (4 + 8)
庫存4,224
Three Level Inverter
600V
379A
1250W
2.5V @ 15V, 300A
250µA
23.3nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
Dual INT-A-PAK (4 + 8)
Dual INT-A-PAK
VS-GB400AH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 650A 2500W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 650A
  • Power - Max: 2500W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ)
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 30nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (5)
  • Supplier Device Package: Double INT-A-PAK
封裝: Double INT-A-PAK (5)
庫存7,744
Single
1200V
650A
2500W
1.9V @ 15V, 400A (Typ)
5mA
30nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GT400TH60N
Vishay Semiconductor Diodes Division

IGBT 600V 530A 1600W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 530A
  • Power - Max: 1600W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 30.8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
封裝: Double INT-A-PAK (3 + 8)
庫存3,648
Half Bridge
600V
530A
1600W
2.05V @ 15V, 400A
5mA
30.8nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GB200TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 330A 1316W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 330A
  • Power - Max: 1316W
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 16.9nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封裝: Double INT-A-PAK (3 + 4)
庫存4,736
Half Bridge
1200V
330A
1316W
3.6V @ 15V, 200A
5mA
16.9nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB200TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 360A 1136W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 360A
  • Power - Max: 1136W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 14.9nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封裝: Double INT-A-PAK (3 + 4)
庫存2,720
Half Bridge
1200V
360A
1136W
2.35V @ 15V, 200A
5mA
14.9nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB300AH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 620A 2500W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 620A
  • Power - Max: 2500W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ)
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 21nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (5)
  • Supplier Device Package: Double INT-A-PAK
封裝: Double INT-A-PAK (5)
庫存6,576
Single
1200V
620A
2500W
1.9V @ 15V, 300A (Typ)
5mA
21nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GB150TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 300A 1008W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 1008W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 11nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封裝: Double INT-A-PAK (3 + 4)
庫存7,456
Half Bridge
1200V
300A
1008W
2.35V @ 15V, 150A
5mA
11nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK