頁 340 - Vishay Semiconductor Diodes Division 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SRP300G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 125°C	封裝: DO-201AD, Axial	庫存7,328	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 125°C
SRP300B-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 125°C	封裝: DO-201AD, Axial	庫存2,592	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	10µA @ 100V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 125°C
SL44HE3/57T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 4A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 440mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AB, SMC	庫存4,048	40V	4A	440mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SL13HE3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1.5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 445mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AC, SMA	庫存2,304	30V	1.5A	445mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
S3GHE3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AB, SMC	庫存40,800	400V	3A	1.15V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
S2GHE3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AA, SMB	庫存171,600	400V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JHE3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存993,600	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S1GHE3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存2,670,000	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RGP02-20EHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2KV 500MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 2000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AL, DO-41, Axial	庫存7,536	2000V	500mA	1.8V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 2000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RGP02-20EHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2KV 500MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 2000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AL, DO-41, Axial	庫存7,392	2000V	500mA	1.8V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 2000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MURS340HE3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214AB, SMC	庫存20,400	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
MURS120HE3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-214AA, SMB	庫存5,472	200V	2A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 175°C
MUR160-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AC, DO-15, Axial	庫存2,896	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
GI854-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	封裝: DO-201AD, Axial	庫存2,528	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 400V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
GI852-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	封裝: DO-201AD, Axial	庫存7,168	200V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 200V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
GI851-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	封裝: DO-201AD, Axial	庫存2,720	100V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 100V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
GI824-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	封裝: P600, Axial	庫存3,136	400V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 400V	300pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
GI821-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 5A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	封裝: P600, Axial	庫存4,448	100V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 100V	300pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
ES2DHE3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AA, SMB	庫存22,800	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 200V	18pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BY500-800-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 125°C (Max)	封裝: DO-201AD, Axial	庫存6,752	800V	5A	1.35V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 800V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	125°C (Max)
BY500-400-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 125°C (Max)	封裝: DO-201AD, Axial	庫存7,456	400V	5A	1.35V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 400V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	125°C (Max)
BY399P-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 125°C	封裝: DO-201AD, Axial	庫存4,320	800V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 125°C
1N5626GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-201AD, Axial	庫存2,000	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 600V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
1N5620GPHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: 20pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AC, DO-15, Axial	庫存7,056	800V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	20pF @ 12V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
1N5614GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: 45pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AC, DO-15, Axial	庫存5,632	200V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
GPP100MS-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 10A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C	封裝: P600, Axial	庫存6,752	1000V	10A	1.05V @ 10A	Standard Recovery >500ns, > 200mA (Io)	5.5µs	5µA @ 1000V	110pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-55°C ~ 175°C
V10P10HM3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封裝: TO-277, 3-PowerDFN	庫存195,600	100V	10A	680mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
USB260-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AA, SMB	庫存429,000	600V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 600V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C

SRP300G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 125°C

封裝: DO-201AD, Axial

庫存7,328

400V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 400V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 125°C

SRP300B-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 125°C

封裝: DO-201AD, Axial

庫存2,592

100V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

10µA @ 100V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 125°C

SL44HE3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 4A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 440mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AB, SMC

庫存4,048

40V

4A

440mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

SL13HE3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1.5A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 445mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AC, SMA

庫存2,304

30V

1.5A

445mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

S3GHE3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

庫存40,800

400V

3A

1.15V @ 2.5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 400V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

S2GHE3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

庫存171,600

400V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 400V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

S1JHE3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存993,600

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 600V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

S1GHE3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存2,670,000

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 400V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RGP02-20EHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 500MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

庫存7,536

2000V

500mA

1.8V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 2000V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

RGP02-20EHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 500MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AL, DO-41, Axial

庫存7,392

2000V

500mA

1.8V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 2000V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

MURS340HE3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AB, SMC

庫存20,400

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 400V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-65°C ~ 175°C

MURS120HE3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-214AA, SMB

庫存5,472

200V

2A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 200V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 175°C

MUR160-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AC, DO-15, Axial

庫存2,896

600V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 600V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

GI854-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-201AD, Axial

庫存2,528

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 400V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

GI852-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-201AD, Axial

庫存7,168

200V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 200V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

GI851-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

封裝: DO-201AD, Axial

庫存2,720

100V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 100V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

GI824-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

封裝: P600, Axial

庫存3,136

400V

5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 400V

300pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

GI821-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 5A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

封裝: P600, Axial

庫存4,448

100V

5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 100V

300pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

ES2DHE3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

庫存22,800

200V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 200V

18pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

BY500-800-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 125°C (Max)

封裝: DO-201AD, Axial

庫存6,752

800V

5A

1.35V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 800V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

125°C (Max)

BY500-400-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 125°C (Max)

封裝: DO-201AD, Axial

庫存7,456

400V

5A

1.35V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 400V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

125°C (Max)

BY399P-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 125°C

封裝: DO-201AD, Axial

庫存4,320

800V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

10µA @ 800V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 125°C

1N5626GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-201AD, Axial

庫存2,000

600V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 600V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

1N5620GPHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: 20pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AC, DO-15, Axial

庫存7,056

800V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 800V

20pF @ 12V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

1N5614GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AC, DO-15, Axial

庫存5,632

200V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 200V

45pF @ 12V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

GPP100MS-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 10A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 175°C

封裝: P600, Axial

庫存6,752

1000V

10A

1.05V @ 10A

Standard Recovery >500ns, > 200mA (Io)

5.5µs

5µA @ 1000V

110pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-55°C ~ 175°C

V10P10HM3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-277, 3-PowerDFN

庫存195,600

100V

10A

680mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 100V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

USB260-E3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

庫存429,000

600V

2A

1.6V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 600V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C