頁 278 - Vishay Semiconductor Diodes Division 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VSD3913R	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 30A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -	封裝: DO-203AB, DO-5, Stud	庫存3,824	400V	30A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-
IRD3910R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 30A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 80µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封裝: DO-203AB, DO-5, Stud	庫存6,416	100V	30A	1.8V @ 62.8A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	80µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
IRD3909R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 30A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 80µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封裝: DO-203AB, DO-5, Stud	庫存3,648	50V	30A	1.8V @ 62.8A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	80µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
IRD3903R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 20A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封裝: DO-203AB, DO-5, Stud	庫存3,840	400V	20A	1.65V @ 62.8A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	50µA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
IRD3901R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 20A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封裝: DO-203AB, DO-5, Stud	庫存5,504	200V	20A	1.65V @ 62.8A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	50µA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
HFA25TB60STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 25A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,464	600V	25A	1.7V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	20µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA16TB120STRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,216	1200V	16A	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA16TB120STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,504	1200V	16A	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA16TB120S	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,416	1200V	16A	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA15TB60STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,328	600V	15A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA08TB60STRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,240	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	5µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA08TB120STRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95ns Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,456	1200V	8A	3.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	10µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA08TB120STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95ns Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,296	1200V	8A	3.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	10µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA06TB120STRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 6A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,928	1200V	6A	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	5µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA06TB120STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 6A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,456	1200V	6A	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	5µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA04TB60STRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 4A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,128	600V	4A	1.8V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	3µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
HFA04TB60STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 4A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,720	600V	4A	1.8V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	3µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
VS-90SQ040TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 9A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AR, Axial	庫存2,176	40V	9A	480mV @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 40V	-	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 150°C
VS-90SQ035TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 9A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AR, Axial	庫存3,264	35V	9A	480mV @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 35V	-	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 150°C
VS-90SQ030TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 9A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AR, Axial	庫存4,336	30V	9A	480mV @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 30V	-	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 150°C
VS-90SQ030	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 9A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AR, Axial	庫存4,752	30V	9A	480mV @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 30V	-	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 150°C
8TQ100STRL	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,648	100V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
8TQ080STRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 80V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,272	80V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 80V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
8TQ080STRL	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 80V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,096	80V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 80V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
8EWS12STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存424,980	1200V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C
8EWS10STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存5,840	1000V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C
8EWS10S	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存29,724	1000V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-55°C ~ 150°C
8EWS08STR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存502,512	800V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C

VSD3913R

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 30A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -

封裝: DO-203AB, DO-5, Stud

庫存3,824

400V

30A

-

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-

IRD3910R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 30A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 80µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封裝: DO-203AB, DO-5, Stud

庫存6,416

100V

30A

1.8V @ 62.8A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

80µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

IRD3909R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 30A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 80µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封裝: DO-203AB, DO-5, Stud

庫存3,648

50V

30A

1.8V @ 62.8A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

80µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

IRD3903R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 20A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封裝: DO-203AB, DO-5, Stud

庫存3,840

400V

20A

1.65V @ 62.8A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

50µA @ 400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

IRD3901R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封裝: DO-203AB, DO-5, Stud

庫存5,504

200V

20A

1.65V @ 62.8A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

50µA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

HFA25TB60STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 25A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,464

600V

25A

1.7V @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

20µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA16TB120STRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 16A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 3V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,216

1200V

16A

3V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

20µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA16TB120STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 16A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 3V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,504

1200V

16A

3V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

20µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA16TB120S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 16A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 3V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,416

1200V

16A

3V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

20µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA15TB60STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,328

600V

15A

1.7V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA08TB60STRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,240

600V

8A

1.7V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

5µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA08TB120STRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,456

1200V

8A

3.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

95ns

10µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA08TB120STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,296

1200V

8A

3.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

95ns

10µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA06TB120STRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,928

1200V

6A

3V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

5µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA06TB120STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,456

1200V

6A

3V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

5µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA04TB60STRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 4A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,128

600V

4A

1.8V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

3µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

HFA04TB60STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 4A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,720

600V

4A

1.8V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

3µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

VS-90SQ040TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 9A DO204AR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AR, Axial

庫存2,176

40V

9A

480mV @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 40V

-

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 150°C

VS-90SQ035TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 9A DO204AR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AR, Axial

庫存3,264

35V

9A

480mV @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 35V

-

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 150°C

VS-90SQ030TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 9A DO204AR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AR, Axial

庫存4,336

30V

9A

480mV @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 30V

-

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 150°C

VS-90SQ030

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 9A DO204AR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AR, Axial

庫存4,752

30V

9A

480mV @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 30V

-

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 150°C

8TQ100STRL

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,648

100V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

8TQ080STRR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,272

80V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 80V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

8TQ080STRL

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,096

80V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 80V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

8EWS12STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存424,980

1200V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-55°C ~ 150°C

8EWS10STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存5,840

1000V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-55°C ~ 150°C

8EWS10S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存29,724

1000V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

-55°C ~ 150°C

8EWS08STR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存502,512

800V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-55°C ~ 150°C