頁 270 - Vishay Semiconductor Diodes Division 產品 - 二極體 - 整流器 - 單 | 黑森爾電子
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Vishay Semiconductor Diodes Division 產品 - 二極體 - 整流器 - 單

記錄 10,373
頁  270/371
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
HFA25TB60S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 25A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,296
600V
25A
1.7V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
20µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
hot HFA15TB60S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存142,860
600V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
HFA08TB120S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,808
1200V
8A
3.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
10µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
hot HFA06TB120S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存14,988
1200V
6A
3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
5µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
MURB1520-1
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 15A TO262-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262-3
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存2,944
200V
15A
1.05V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262-3
-65°C ~ 175°C
VS-60HFU-600
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: DO-203AB, DO-5, Stud
庫存6,752
600V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
50µA @ 600V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
60HFU-400
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 50µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: DO-203AB, DO-5, Stud
庫存6,560
400V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
50µA @ 400V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
60HFU-300
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 60A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 50µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: DO-203AB, DO-5, Stud
庫存6,672
300V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
50µA @ 300V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
hot 60HFU-200
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 60A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: DO-203AB, DO-5, Stud
庫存5,152
200V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
50µA @ 200V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
60HFU-100
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 60A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 50µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: DO-203AB, DO-5, Stud
庫存4,640
100V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
50µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
VSKE320-20
Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 320A MAGN-A-PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存7,056
2000V
320A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 2000V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE320-16
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 320A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存2,896
1600V
320A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1600V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE320-12
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 320A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存2,336
1200V
320A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1200V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE320-08
Vishay Semiconductor Diodes Division

DIODE MODULE 800V 320A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存5,728
800V
320A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 800V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE320-04
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 320A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存3,872
400V
320A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 400V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE270-20
Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 270A MAGN-A-PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 270A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存7,312
2000V
270A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 2000V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE270-16
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 270A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 270A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存6,016
1600V
270A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1600V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE270-12
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 270A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 270A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存5,456
1200V
270A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1200V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE270-08
Vishay Semiconductor Diodes Division

DIODE MODULE 800V 270A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 270A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存3,248
800V
270A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 800V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE250-20
Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 250A MAGN-A-PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存3,664
2000V
250A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 2000V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE250-16
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 250A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存5,616
1600V
250A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1600V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE250-12
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 250A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存4,688
1200V
250A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 1200V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE250-08
Vishay Semiconductor Diodes Division

DIODE MODULE 800V 250A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存3,072
800V
250A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 800V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
VSKE250-04
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 250A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
封裝: 3-MAGN-A-PAK?
庫存7,120
400V
250A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 400V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
IRKE236/16
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 230A INTAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 230A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (2)
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封裝: INT-A-PAK (2)
庫存6,480
1600V
230A
-
Standard Recovery >500ns, > 200mA (Io)
-
20mA @ 1600V
-
Chassis Mount
INT-A-PAK (2)
Module
-
IRKE236/12
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 230A INTAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 230A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (2)
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封裝: INT-A-PAK (2)
庫存2,992
1200V
230A
-
Standard Recovery >500ns, > 200mA (Io)
-
20mA @ 1200V
-
Chassis Mount
INT-A-PAK (2)
Module
-
IRKE236/04
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 230A INT-A-PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 230A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (2)
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封裝: INT-A-PAK (2)
庫存3,408
400V
230A
-
Standard Recovery >500ns, > 200mA (Io)
-
20mA @ 400V
-
Chassis Mount
INT-A-PAK (2)
Module
-
IRKE196/16
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 195A INTAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 195A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (2)
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封裝: INT-A-PAK (2)
庫存3,216
1600V
195A
-
Standard Recovery >500ns, > 200mA (Io)
-
20mA @ 1600V
-
Chassis Mount
INT-A-PAK (2)
Module
-