Vishay Semiconductor Diodes Division 產品 - 二極體 - 整流器 - 單

VS-SD2500C16K

Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 3000A DO200AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 3000A
• Voltage - Forward (Vf) (Max) @ If: 1.41V @ 4000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: DO-200AC, K-PUK
• Operating Temperature - Junction: -

封裝: DO-200AC, K-PUK

VS-SD2500C12K

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 3000A DO200AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 3000A
• Voltage - Forward (Vf) (Max) @ If: 1.41V @ 4000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: DO-200AC, K-PUK
• Operating Temperature - Junction: -

封裝: DO-200AC, K-PUK

VS-SD3000C08K

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 3800A DO200AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3800A
• Voltage - Forward (Vf) (Max) @ If: 1.22V @ 6000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: DO-200AC, K-PUK
• Operating Temperature - Junction: -

封裝: DO-200AC, K-PUK

VS-SD800C36L

Vishay Semiconductor Diodes Division

DIODE MODULE 3.6KV 1180A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3600V
• Current - Average Rectified (Io): 1180A
• Voltage - Forward (Vf) (Max) @ If: 1.66V @ 2000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 3600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

VS-SD800C30L

Vishay Semiconductor Diodes Division

DIODE MODULE 3KV 1180A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000V
• Current - Average Rectified (Io): 1180A
• Voltage - Forward (Vf) (Max) @ If: 1.66V @ 2000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 3000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

VS-SD3000C04K

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 3800A DO200AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3800A
• Voltage - Forward (Vf) (Max) @ If: 1.22V @ 6000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: DO-200AC, K-PUK
• Operating Temperature - Junction: -

封裝: DO-200AC, K-PUK

VS-SD700C36L

Vishay Semiconductor Diodes Division

DIODE MODULE 3.6KV 700A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3600V
• Current - Average Rectified (Io): 700A
• Voltage - Forward (Vf) (Max) @ If: 1.66V @ 1000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 3600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

VS-SD600N28PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2.8KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2800V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 2800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: B-8

VS-SD800C24L

Vishay Semiconductor Diodes Division

DIODE MODULE 2.4KV 1180A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2400V
• Current - Average Rectified (Io): 1180A
• Voltage - Forward (Vf) (Max) @ If: 1.66V @ 2000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 2400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

VS-SD600R32PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 3.2KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3200V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 3200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: B-8

VS-SD600N32PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 3.2KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3200V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 3200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: B-8

VS-SD600R20PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 2000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 190°C

封裝: B-8

VS-SD600N20PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 2000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 180°C

封裝: B-8

VS-SD453N25S20PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2.5KV 400A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 400A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 50mA @ 2500V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: B-8

VS-SD600N22PC

Vishay Semiconductor Diodes Division

DIODE STD REC 2200V 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: B-8

VS-SD600R28PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2.8KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2800V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 2800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: B-8

VS-SD600R12PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 180°C

封裝: B-8

VS-SD600R08PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 190°C

封裝: B-8

VS-SD600N16PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 180°C

封裝: B-8

VS-SD600N08PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 180°C

封裝: B-8

VS-SD553C45S50L

Vishay Semiconductor Diodes Division

DIODE MODULE 4.5KV 560A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500V
• Current - Average Rectified (Io): 560A
• Voltage - Forward (Vf) (Max) @ If: 3.24V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5µs
• Current - Reverse Leakage @ Vr: 75mA @ 4500V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

VS-SD553C30S50L

Vishay Semiconductor Diodes Division

DIODE MODULE 3KV 560A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000V
• Current - Average Rectified (Io): 560A
• Voltage - Forward (Vf) (Max) @ If: 3.24V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5µs
• Current - Reverse Leakage @ Vr: 75mA @ 3000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

VS-SD263C45S50L

Vishay Semiconductor Diodes Division

DIODE MODULE 4.5KV 375A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500V
• Current - Average Rectified (Io): 375A
• Voltage - Forward (Vf) (Max) @ If: 3.2V @ 1000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5µs
• Current - Reverse Leakage @ Vr: 50mA @ 4500V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

VS-SD1053C30S30L

Vishay Semiconductor Diodes Division

DIODE FAST REC 920A 3000V B-PUK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000V
• Current - Average Rectified (Io): 920A
• Voltage - Forward (Vf) (Max) @ If: 2.26V @ 1500A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: DO-200AB, B-PUK

VS-SD600R16PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 180°C

封裝: B-8

VS-SD700C30L

Vishay Semiconductor Diodes Division

DIODE MODULE 3KV 700A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000V
• Current - Average Rectified (Io): 700A
• Voltage - Forward (Vf) (Max) @ If: 1.66V @ 1000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 3000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

VS-SD1053C28S30L

Vishay Semiconductor Diodes Division

DIODE FAST REC 920A 2800V B-PUK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2800V
• Current - Average Rectified (Io): 920A
• Voltage - Forward (Vf) (Max) @ If: 2.26V @ 1500A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: DO-200AB, B-PUK

VS-SD1500C20L

Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 1600A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 1600A
• Voltage - Forward (Vf) (Max) @ If: 1.64V @ 3000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 2000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK