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Toshiba Semiconductor and Storage 產品

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2SJ438(CANO,A,Q)
Toshiba Semiconductor and Storage

MOSFET P-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220NIS
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存5,488
2SK1119(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 1000V 4A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存4,768
TPC8A02-H(TE12L,Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 16A SOP8 2-6J1B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
封裝: 8-SOIC (0.173", 4.40mm Width)
庫存6,496
TPH1110ENH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 200V 7.2A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封裝: 8-PowerVDFN
庫存5,536
TPHR9203PL,L1Q
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 132W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封裝: 8-PowerVDFN
庫存41,244
hot RN1422TE85LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 200MW SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 300MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封裝: TO-236-3, SC-59, SOT-23-3
庫存27,600
2SC5096-R,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 10V 1GHz SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 1.4dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封裝: SC-75, SOT-416
庫存5,952
TA78DS08BP(T6ND,AF
Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 30mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存2,976
TCR2EE50,LM
Toshiba Semiconductor and Storage

IC REG LINEAR 5V 200MA ESV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
封裝: SOT-553
庫存7,776
TB6552FNG,C,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: PWM, Serial
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 800mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Voltage - Load: 2.5 V ~ 13.5 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SSOP
封裝: 16-LSSOP (0.173", 4.40mm Width)
庫存55,446
TC7LX1101WBG(EL,AH
Toshiba Semiconductor and Storage

BUS TRANCEIVER WCSP6

  • Translator Type: Voltage Level
  • Channel Type: Bidirectional
  • Number of Circuits: 1
  • Channels per Circuit: 1
  • Voltage - VCCA: 1.2V ~ 3.6V
  • Voltage - VCCB: 1.2V ~ 3.6V
  • Input Signal: -
  • Output Signal: -
  • Output Type: Non-Inverted
  • Data Rate: 180Mbps
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Features: Auto-Direction Sensing
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFBGA, WLCSP
  • Supplier Device Package: 6-WCSPB (0.80x1.2)
封裝: 6-UFBGA, WLCSP
庫存2,976
TC74VHC14FT(EK2,M)
Toshiba Semiconductor and Storage

IC INV HEX SCHMITT TRIG 14-TSSOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: Schmitt Trigger
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.9 V ~ 1.65 V
  • Logic Level - High: 2.2 V ~ 3.85 V
  • Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
封裝: 14-TSSOP (0.173", 4.40mm Width)
庫存2,224
TC7WH04FU,LJ(CT
Toshiba Semiconductor and Storage

IC INVERTER 8-SSOP

  • Logic Type: Inverter
  • Number of Circuits: 3
  • Number of Inputs: 3
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SM8
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
庫存7,184
74VHC4052AFT
Toshiba Semiconductor and Storage

IC MUX/DEMUX DUAL 4X1 16TSSOP

  • Switch Circuit: SP4T
  • Multiplexer/Demultiplexer Circuit: 4:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 37 Ohm
  • Channel-to-Channel Matching (ΔRon): 5 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 12ns, 12ns
  • -3db Bandwidth: 230MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 0.5pF, 13.1pF
  • Current - Leakage (IS(off)) (Max): 100nA
  • Crosstalk: -45dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOPB
封裝: 16-TSSOP (0.173", 4.40mm Width)
庫存7,408
74HC4051D(BJ)
Toshiba Semiconductor and Storage

IC MUX 8:1 4 OHM 16SOIC

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 130 Ohm
  • Channel-to-Channel Matching (ΔRon): 4 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 6 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 34ns, 32ns
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 10pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -50dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.154", 3.90mm Width)
庫存19,482
DF5A6.8FUTE85LF
Toshiba Semiconductor and Storage

TVS DIODE 5VWM USV

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V
  • Voltage - Breakdown (Min): 6.4V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 45pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
封裝: 5-TSSOP, SC-70-5, SOT-353
庫存24,324
TLP4176G(TP,F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 4-SOP

  • Circuit: SPST-NC (1 Form B)
  • Output Type: AC, DC
  • On-State Resistance (Max): 25 Ohm
  • Load Current: 120mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 350 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
封裝: 4-SOP (0.173", 4.40mm)
庫存3,580
TLP182(TPL,E
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
封裝: 6-SMD (4 Leads), Gull Wing
庫存7,182
TLP785(BL,F)
Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 200% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 60mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: 4-DIP
封裝: 4-DIP (0.300", 7.62mm)
庫存16,932
TB67S142NG
Toshiba Semiconductor and Storage

2 PHASE UNIPOLAR STEPPING MOTOR

  • Motor Type - Stepper: Unipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 40 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-SDIP (0.300", 7.62mm)
  • Supplier Device Package: 24-SDIP
封裝: 24-SDIP (0.300", 7.62mm)
庫存16,140
TCR5BM11,L3F
Toshiba Semiconductor and Storage

IC REG LINE 1.1V 500MA 5DFNB

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.14V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): 36µA
  • Current - Supply (Max): -
  • PSRR: 98dB (1kHz)
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
封裝: 4-XDFN Exposed Pad
庫存36,006
TK155A65Z-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封裝: -
Request a Quote
TCR2EN33-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=3.3V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.18V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
封裝: -
庫存17,913
TK25A20D-S5X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存75
TCR3UM175A-LF-SE
Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.75V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.573V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680 nA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
封裝: -
庫存59,670
TTA006B-Q
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-126N PC

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 230 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 200nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.5 W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126N
封裝: -
庫存585
TB67S589FTG-O-R-EL
Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER, 50V, 3A, 1

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: -
  • Technology: BiCDMOS
  • Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 8.2V ~ 44V
  • Voltage - Load: 50V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-VQFN (5x5)
封裝: -
Request a Quote
TPCF8A01-TE85L
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A VS-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 330mW (Ta)
  • Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-8 (2.9x1.5)
  • Package / Case: 8-SMD, Flat Lead
封裝: -
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