頁 25 - Toshiba Semiconductor and Storage 產品

零件編號	製造商	描述	封裝	庫存
TPCC8067-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 9A 8TSON-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	封裝: 8-PowerVDFN	庫存15,120
TPC8014(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 11A SOP8 2-6J1B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	封裝: 8-SOIC (0.173", 4.40mm Width)	庫存3,376
TK31V60W,LVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 30.8A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (8x8) Package / Case: 4-VSFN Exposed Pad	封裝: 4-VSFN Exposed Pad	庫存270,000
TK40A10N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	封裝: TO-220-3 Full Pack, Isolated Tab	庫存9,228
SSM3K123TU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 4.2A UFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	封裝: 3-SMD, Flat Leads	庫存266,004
2SC3669-Y,T2PASF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 80V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	封裝: SC-71	庫存4,448
RN1444ATE85LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.2W S-MINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 30MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封裝: TO-236-3, SC-59, SOT-23-3	庫存2,800
RN1310(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封裝: SC-70, SOT-323	庫存36,000
RN1964FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存28,230
RN1510(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.3W SMV Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封裝: SC-74A, SOT-753	庫存25,866
TC7WZ04FU,LJ(CT	Toshiba Semiconductor and Storage	IC INVERTER 3CH 8SSOP Logic Type: Inverter Number of Circuits: 3 Number of Inputs: 3 Features: - Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 10µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	庫存4,240
TC74HC20AF-ELF	Toshiba Semiconductor and Storage	IC GATE NAND 2CH 4-INP 14SOP Logic Type: NAND Gate Number of Circuits: 2 Number of Inputs: 4 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOP Package / Case: 14-SOIC (0.209", 5.30mm Width)	封裝: 14-SOIC (0.209", 5.30mm Width)	庫存16,692
74HC21D(BJ)	Toshiba Semiconductor and Storage	IC GATE AND DUAL 4 IN 14SOIC Logic Type: AND Gate Number of Circuits: 2 Number of Inputs: 4 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	封裝: 14-SOIC (0.154", 3.90mm Width)	庫存23,940
TLP3547(F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 5A 60V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 50 mOhm Load Current: 5A Voltage - Input: 1.64VDC Voltage - Load: 0 ~ 60 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Relay Type: Relay	封裝: 8-DIP (0.300", 7.62mm)	庫存8,100
TLP3441(TP,F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 140MA 40V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 5 Ohm Load Current: 140mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 40 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.096", 2.45mm) Supplier Device Package: 4-VSON Relay Type: Relay	封裝: 4-SMD (0.096", 2.45mm)	庫存23,862
TLP160G(TPR,U,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRIAC 6MFSOP Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 2500Vrms Voltage - Off State: 400V Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads Supplier Device Package: 6-MFSOP, 4 Lead Approvals: UR	封裝: 6-SOIC (0.173", 4.40mm Width) 4 Leads	庫存635,604
TLP109(IGM,E)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 5 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 25% @ 10mA Current Transfer Ratio (Max): 75% @ 10mA Turn On / Turn Off Time (Typ): 450ns, 450ns Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.64V Current - DC Forward (If) (Max): 20mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	封裝: 6-SOIC (0.179", 4.55mm Width) 5 Leads	庫存4,230
TLP2116(F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV 2CH PUSH PULL 8SO Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 10kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存15,804
TB67S511FTAG,EL	Toshiba Semiconductor and Storage	STEPPING MOTOR DRIVER IC 40V/2.0 Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (6x6)	封裝: 36-WFQFN Exposed Pad	庫存64,776
TAR5S16U(TE85L,F)	Toshiba Semiconductor and Storage	200MA LDO VOUT1.6V DROPOUTV IQ17 Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,344
TCR2EE31,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT3.1V DROPOUT180MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,496
SSM6L807R-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	封裝: -	庫存18,000
RN2117MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封裝: -	庫存24,000
RN1901-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存7,875
RN2101MFV-L3F-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封裝: -	Request a Quote
TPH2R306NH1-LQ	Toshiba Semiconductor and Storage	UMOS9 SOP-ADV(N) PD=170W F=1MHZ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5.75) Package / Case: 8-PowerTDFN	封裝: -	庫存46,617
2SC5886A-T6L1-NQ	Toshiba Semiconductor and Storage	TRANS NPN 50V 5A PW-MOLD Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	封裝: -	Request a Quote
TW140Z120C-S1F	Toshiba Semiconductor and Storage	G3 1200V SIC-MOSFET TO-247-4L 14 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 191mOhm @ 10A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247-4L(X) Package / Case: TO-247-4	封裝: -	庫存360

TPCC8067-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 9A 8TSON-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

庫存15,120

TPC8014(TE12L,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A SOP8 2-6J1B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

封裝: 8-SOIC (0.173", 4.40mm Width)

庫存3,376

TK31V60W,LVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 30.8A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 98 mOhm @ 15.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (8x8)
Package / Case: 4-VSFN Exposed Pad

封裝: 4-VSFN Exposed Pad

庫存270,000

TK40A10N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

封裝: TO-220-3 Full Pack, Isolated Tab

庫存9,228

SSM3K123TU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.2A UFM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads

封裝: 3-SMD, Flat Leads

庫存266,004

2SC3669-Y,T2PASF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 80V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

封裝: SC-71

庫存4,448

RN1444ATE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 30MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封裝: TO-236-3, SC-59, SOT-23-3

庫存2,800

RN1310(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封裝: SC-70, SOT-323

庫存36,000

RN1964FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存28,230

RN1510(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封裝: SC-74A, SOT-753

庫存25,866

TC7WZ04FU,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER 3CH 8SSOP

Logic Type: Inverter
Number of Circuits: 3
Number of Inputs: 3
Features: -
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 10µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

庫存4,240

TC74HC20AF-ELF

Toshiba Semiconductor and Storage

IC GATE NAND 2CH 4-INP 14SOP

Logic Type: NAND Gate
Number of Circuits: 2
Number of Inputs: 4
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOP
Package / Case: 14-SOIC (0.209", 5.30mm Width)

封裝: 14-SOIC (0.209", 5.30mm Width)

庫存16,692

74HC21D(BJ)

Toshiba Semiconductor and Storage

IC GATE AND DUAL 4 IN 14SOIC

Logic Type: AND Gate
Number of Circuits: 2
Number of Inputs: 4
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)

封裝: 14-SOIC (0.154", 3.90mm Width)

庫存23,940

TLP3547(F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 5A 60V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 50 mOhm
Load Current: 5A
Voltage - Input: 1.64VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP
Relay Type: Relay

封裝: 8-DIP (0.300", 7.62mm)

庫存8,100

TLP3441(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 140MA 40V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 5 Ohm
Load Current: 140mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 40 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.096", 2.45mm)
Supplier Device Package: 4-VSON
Relay Type: Relay

封裝: 4-SMD (0.096", 2.45mm)

庫存23,862

TLP160G(TPR,U,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRIAC 6MFSOP

Output Type: Triac
Zero Crossing Circuit: No
Number of Channels: 1
Voltage - Isolation: 2500Vrms
Voltage - Off State: 400V
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 70mA
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads
Supplier Device Package: 6-MFSOP, 4 Lead
Approvals: UR

封裝: 6-SOIC (0.173", 4.40mm Width) 4 Leads

庫存635,604

TLP109(IGM,E)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 25% @ 10mA
Current Transfer Ratio (Max): 75% @ 10mA
Turn On / Turn Off Time (Typ): 450ns, 450ns
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 20V
Current - Output / Channel: 8mA
Voltage - Forward (Vf) (Typ): 1.64V
Current - DC Forward (If) (Max): 20mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

封裝: 6-SOIC (0.179", 4.55mm Width) 5 Leads

庫存4,230

TLP2116(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PUSH PULL 8SO

Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 15MBd
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Rise / Fall Time (Typ): 15ns, 15ns
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存15,804

TB67S511FTAG,EL

Toshiba Semiconductor and Storage

STEPPING MOTOR DRIVER IC 40V/2.0

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 36-WFQFN Exposed Pad
Supplier Device Package: 36-WQFN (6x6)

封裝: 36-WFQFN Exposed Pad

庫存64,776

TAR5S16U(TE85L,F)

Toshiba Semiconductor and Storage

200MA LDO VOUT1.6V DROPOUTV IQ17

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,344

TCR2EE31,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT3.1V DROPOUT180MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,496

SSM6L807R-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

封裝: -

庫存18,000

RN2117MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封裝: -

庫存24,000

RN1901-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存7,875

RN2101MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封裝: -

Request a Quote

TPH2R306NH1-LQ

Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5.75)
Package / Case: 8-PowerTDFN

封裝: -

庫存46,617

2SC5886A-T6L1-NQ

Toshiba Semiconductor and Storage

TRANS NPN 50V 5A PW-MOLD

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

封裝: -

Request a Quote

TW140Z120C-S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 14

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 191mOhm @ 10A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L(X)
Package / Case: TO-247-4

封裝: -

庫存360