頁 138 - Toshiba Semiconductor and Storage 產品

零件編號	製造商	描述	封裝	庫存
TK16V60W,LVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (8x8) Package / Case: 4-VSFN Exposed Pad	封裝: 4-VSFN Exposed Pad	庫存2,512
TK4A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 3.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存4,976
2SK3309(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 10A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存6,240
2SK3309(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 10A TO220FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3, Short Tab	封裝: TO-220-3, Short Tab	庫存6,224
TPN4R712MD,L1Q	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 36A 8TSON ADV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 18A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	封裝: 8-PowerVDFN	庫存38,118
2SA1931,SINFQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	封裝: TO-220-3 Full Pack	庫存7,344
RN1406,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.2W S-MINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封裝: TO-236-3, SC-59, SOT-23-3	庫存24,942
RN2911,LF	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存98,616
TAR5S49(TE85L,F)	Toshiba Semiconductor and Storage	IC REG LINEAR 200MA SMV Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封裝: SC-74A, SOT-753	庫存28,806
TBD62083APG	Toshiba Semiconductor and Storage	IC LOAD SWITCH 8CH 0.5A 18DIP Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): - Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	封裝: 18-DIP (0.300", 7.62mm)	庫存16,626
TC74VCX16841(EL,F)	Toshiba Semiconductor and Storage	IC LATCH D-TYPE 20BIT 56-TSSOP Logic Type: D-Type Transparent Latch Circuit: 10:10 Output Type: Tri-State Voltage - Supply: 1.8 V ~ 3.6 V Independent Circuits: 2 Delay Time - Propagation: 1ns Current - Output High, Low: 6mA, 6mA Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.240", 6.10mm Width) Supplier Device Package: 56-TSSOP	封裝: 56-TFSOP (0.240", 6.10mm Width)	庫存7,376
74HC259D(BJ)	Toshiba Semiconductor and Storage	IC 8BIT ADDRESSABLE LATCH 16SOIC Logic Type: D-Type, Addressable Circuit: 1:8 Output Type: Standard Voltage - Supply: 2 V ~ 6 V Independent Circuits: 1 Delay Time - Propagation: 22ns Current - Output High, Low: 5.2mA, 5.2mA Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存20,646
TC74VHC574FK(EL,K)	Toshiba Semiconductor and Storage	IC FF D-TYPE SNGL 8BIT 20VSSOP Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 115MHz Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Iq): 40µA Input Capacitance: 4pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-VFSOP (0.118", 3.00mm Width)	封裝: 20-VFSOP (0.118", 3.00mm Width)	庫存21,282
TMPM333FYFG(C)	Toshiba Semiconductor and Storage	IC MCU 32BIT 256KB FLASH 100LQFP Core Processor: ARM? Cortex?-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: I2C, SIO, UART/USART Peripherals: POR, WDT Number of I/O: 78 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 12x10b Oscillator Type: External Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封裝: 100-LQFP	庫存8,856
DF2S16FS,L3M	Toshiba Semiconductor and Storage	TVS DIODE 12VWM Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 12V (Max) Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	封裝: SOD-923	庫存594,288
TLP3118(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET 40MA 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 16 Ohm Load Current: 40mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 80 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	封裝: 4-SOP (0.173", 4.40mm)	庫存6,372
TLP290(GB,SE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 7µs, 7µs Rise / Fall Time (Typ): 4µs, 7µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	封裝: 4-SOIC (0.179", 4.55mm)	庫存8,148
TLP185(GR-TPR,E)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 9µs, 9µs Rise / Fall Time (Typ): 5µs, 9µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	封裝: 6-SMD (4 Leads), Gull Wing	庫存188,304
RN1105MFV-L3F-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封裝: -	庫存53,742
TB9045FNG-150-EL	Toshiba Semiconductor and Storage	AUTOMOTIVE VOLTAGE REGULATOR Applications: Power Supply, Automotive Applications Voltage - Input: - Number of Outputs: 3 Voltage - Output: 6V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	封裝: -	Request a Quote
HN2S02FU-TE85L-F	Toshiba Semiconductor and Storage	DIODE ARR SCHOTT 40V 100MA US6 Diode Configuration: 3 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 40 V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存8,490
TRS10E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 10A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 649pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	封裝: -	庫存876
SSM6N55NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	封裝: -	庫存1,455
TPW1R104PB-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 120A 8DSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	封裝: -	Request a Quote
TCR2DG285-LF	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) IOUT: 200MA PD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.85V Voltage - Output (Max): - Voltage Dropout (Max): 0.12V @ 100mA Current - Output: 200mA Current - Quiescent (Iq): 70 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WCSP (0.79x0.79)	封裝: -	Request a Quote
SSM6J808R-LF	Toshiba Semiconductor and Storage	P-CH MOSFET, -40 V, -7 A, 0.035O FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-TSOP-F Package / Case: 6-SMD, Flat Leads	封裝: -	庫存17,949
TPH1500CNH-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 38A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封裝: -	庫存25,071
TC62D776CFNAG-CEBH-1	Toshiba Semiconductor and Storage	IC LED DRIVER Type: Linear Topology: Shift Register Internal Switch(s): No Number of Outputs: 1 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: No Applications: LED Lighting Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 24-SSOP (0.154", 3.90mm Width) Supplier Device Package: 24-SSOP	封裝: -	Request a Quote

TK16V60W,LVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (8x8)
Package / Case: 4-VSFN Exposed Pad

封裝: 4-VSFN Exposed Pad

庫存2,512

TK4A55DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 3.5A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存4,976

2SK3309(TE24L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 10A TO220SM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存6,240

2SK3309(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 10A TO220FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FL
Package / Case: TO-220-3, Short Tab

封裝: TO-220-3, Short Tab

庫存6,224

TPN4R712MD,L1Q

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 36A 8TSON ADV

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 18A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

庫存38,118

2SA1931,SINFQ(J

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 2W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

封裝: TO-220-3 Full Pack

庫存7,344

RN1406,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封裝: TO-236-3, SC-59, SOT-23-3

庫存24,942

RN2911,LF

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存98,616

TAR5S49(TE85L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 200MA SMV

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封裝: SC-74A, SOT-753

庫存28,806

TBD62083APG

Toshiba Semiconductor and Storage

IC LOAD SWITCH 8CH 0.5A 18DIP

Switch Type: General Purpose
Number of Outputs: 8
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): -
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 18-DIP (0.300", 7.62mm)
Supplier Device Package: 18-DIP

封裝: 18-DIP (0.300", 7.62mm)

庫存16,626

TC74VCX16841(EL,F)

Toshiba Semiconductor and Storage

IC LATCH D-TYPE 20BIT 56-TSSOP

Logic Type: D-Type Transparent Latch
Circuit: 10:10
Output Type: Tri-State
Voltage - Supply: 1.8 V ~ 3.6 V
Independent Circuits: 2
Delay Time - Propagation: 1ns
Current - Output High, Low: 6mA, 6mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Supplier Device Package: 56-TSSOP

封裝: 56-TFSOP (0.240", 6.10mm Width)

庫存7,376

74HC259D(BJ)

Toshiba Semiconductor and Storage

IC 8BIT ADDRESSABLE LATCH 16SOIC

Logic Type: D-Type, Addressable
Circuit: 1:8
Output Type: Standard
Voltage - Supply: 2 V ~ 6 V
Independent Circuits: 1
Delay Time - Propagation: 22ns
Current - Output High, Low: 5.2mA, 5.2mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存20,646

TC74VHC574FK(EL,K)

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20VSSOP

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 115MHz
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Iq): 40µA
Input Capacitance: 4pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-VFSOP (0.118", 3.00mm Width)

封裝: 20-VFSOP (0.118", 3.00mm Width)

庫存21,282

TMPM333FYFG(C)

Toshiba Semiconductor and Storage

IC MCU 32BIT 256KB FLASH 100LQFP

Core Processor: ARM? Cortex?-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Number of I/O: 78
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
Data Converters: A/D 12x10b
Oscillator Type: External
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封裝: 100-LQFP

庫存8,856

DF2S16FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 12VWM

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 12V (Max)
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923

封裝: SOD-923

庫存594,288

TLP3118(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 40MA 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 16 Ohm
Load Current: 40mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 80 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

封裝: 4-SOP (0.173", 4.40mm)

庫存6,372

TLP290(GB,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 400% @ 5mA
Turn On / Turn Off Time (Typ): 7µs, 7µs
Rise / Fall Time (Typ): 4µs, 7µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

封裝: 4-SOIC (0.179", 4.55mm)

庫存8,148

TLP185(GR-TPR,E)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 300% @ 5mA
Turn On / Turn Off Time (Typ): 9µs, 9µs
Rise / Fall Time (Typ): 5µs, 9µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

封裝: 6-SMD (4 Leads), Gull Wing

庫存188,304

RN1105MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封裝: -

庫存53,742

TB9045FNG-150-EL

Toshiba Semiconductor and Storage

AUTOMOTIVE VOLTAGE REGULATOR

Applications: Power Supply, Automotive Applications
Voltage - Input: -
Number of Outputs: 3
Voltage - Output: 6V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Supplier Device Package: 48-HTSSOP

封裝: -

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HN2S02FU-TE85L-F

Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 40V 100MA US6

Diode Configuration: 3 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存8,490

TRS10E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 10A TO-220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C

封裝: -

庫存876

SSM6N55NU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN (2x2)

封裝: -

庫存1,455

TPW1R104PB-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8DSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-DSOP Advance
Package / Case: 8-PowerVDFN

封裝: -

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TCR2DG285-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.12V @ 100mA
Current - Output: 200mA
Current - Quiescent (Iq): 70 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WCSP (0.79x0.79)

封裝: -

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SSM6J808R-LF

Toshiba Semiconductor and Storage

P-CH MOSFET, -40 V, -7 A, 0.035O

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP-F
Package / Case: 6-SMD, Flat Leads

封裝: -

庫存17,949

TPH1500CNH-L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 150V 38A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封裝: -

庫存25,071

TC62D776CFNAG-CEBH-1

Toshiba Semiconductor and Storage

IC LED DRIVER

Type: Linear
Topology: Shift Register
Internal Switch(s): No
Number of Outputs: 1
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: No
Applications: LED Lighting
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Supplier Device Package: 24-SSOP

封裝: -

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