Toshiba Semiconductor and Storage 產品

TPCC8066-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A 8TSON-ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 17W (Tc)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

TPC6110(TE85L,F,M)

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 4.5A VS6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VS-6 (2.9x2.8)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封裝: SOT-23-6 Thin, TSOT-23-6

TK4R3E06PL,S1X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 48.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 4.5V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封裝: TO-220-3

SSM3K7002KF,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.4A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 270mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: S-Mini
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

TK31V60X,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 240W (Tc)
• Rds On (Max) @ Id, Vgs: 98 mOhm @ 9.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (8x8)
• Package / Case: 4-VSFN Exposed Pad

封裝: 4-VSFN Exposed Pad

2SA1869-Y(JKT,Q,M)

Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 10W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

封裝: TO-220-3 Full Pack

2SA1837,F(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

封裝: TO-220-3 Full Pack

RN2318(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

封裝: SC-70, SOT-323

RN2118MFV(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.15W VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

封裝: SOT-723

RN2608(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SM6

封裝: SC-74, SOT-457

RN2511(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

• Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

封裝: SC-74A, SOT-753

CLS02(T6L,CANO-O,Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 40V
• Capacitance @ Vr, F: 420pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

CUS08F30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 800MA USC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 220mV @ 10mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Capacitance @ Vr, F: 170pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC
• Operating Temperature - Junction: 125°C (Max)

封裝: SC-76, SOD-323

1SS402TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 20V USQ

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 50mA
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500nA @ 20V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: USQ

封裝: SC-82

1SS423(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 40V SSM

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 40V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

封裝: SC-75, SOT-416

TA78DS10BP(6MB1,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

封裝: TO-226-3, TO-92-3 Long Body

TCR2EE18,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA ESV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

封裝: SOT-553

TB6560AFTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 34 V
• Operating Temperature: -30°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

封裝: 48-VFQFN Exposed Pad

TC74LCX573F(EL,K,F

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20SOP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 1.65 V ~ 3.6 V
• Independent Circuits: 1
• Delay Time - Propagation: 1.5ns
• Current - Output High, Low: 24mA, 24mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 20-SOP

封裝: 20-SOIC (0.209", 5.30mm Width)

TC74LCX14FT-ELK

Toshiba Semiconductor and Storage

IC INVERTER HEX SCHMITT 14-TSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: Schmitt Trigger
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.3 V ~ 0.6 V
• Logic Level - High: 1.35 V ~ 2.2 V
• Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封裝: 14-TSSOP (0.173", 4.40mm Width)

TC74HC273APF

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20DIP

• Function: Reset
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 66MHz
• Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Iq): 40µA
• Input Capacitance: 5pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 20-DIP (0.300", 7.62mm)

封裝: 20-DIP (0.300", 7.62mm)

TC7W126FUTE12LF

Toshiba Semiconductor and Storage

IC BUS BUFFER DUAL N-INV SM8

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: SM8

封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TLP185(BLL-TL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 200% @ 5mA
• Current Transfer Ratio (Max): 400% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

封裝: 6-SMD (4 Leads), Gull Wing

TLP716(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 5KV PUSH PULL 6DIP GW

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 10mA
• Data Rate: 15MBd
• Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
• Rise / Fall Time (Typ): 15ns, 15ns
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.268", 6.80mm Width)
• Supplier Device Package: 6-SDIP Gull Wing

封裝: 6-SOIC (0.268", 6.80mm Width)

TK110A10PL-S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 10.8mOhm @ 18A, 10V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

封裝: -

RN1310-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

封裝: -

TPW3R70APL-L1Q

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DSOP Advance
• Package / Case: 8-PowerWDFN

封裝: -

TCR2LN36-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.6V I=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.28V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

封裝: -