Toshiba Semiconductor and Storage 產品 - 電晶體 - IGBT - 單

GT50J121(Q)

Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Power - Max: 240W
Switching Energy: 1.3mJ (on), 1.34mJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 90ns/300ns
Test Condition: 300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(LH)

封裝: TO-3PL

庫存4,736

600V

50A

100A

2.45V @ 15V, 50A

240W

1.3mJ (on), 1.34mJ (off)

Standard

-

90ns/300ns

300V, 50A, 13 Ohm, 15V

-

150°C (TJ)

Through Hole

TO-3PL

TO-3P(LH)

GT8G133(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Power - Max: 600mW
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 1.7µs/2µs
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存2,100

400V

-

150A

2.9V @ 4V, 150A

600mW

-

Standard

-

1.7µs/2µs

-

150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

GT60N321(Q)

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Power - Max: 170W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 330ns/700ns
Test Condition: -
Reverse Recovery Time (trr): 2.5µs
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(LH)

封裝: TO-3PL

庫存22,140

1000V

60A

120A

2.8V @ 15V, 60A

170W

-

Standard

-

330ns/700ns

-

2.5µs

150°C (TJ)

Through Hole

TO-3PL

TO-3P(LH)

GT10J312(Q)

Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 20A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Power - Max: 60W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 400ns/400ns
Test Condition: 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-220SM

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存2,992

600V

10A

20A

2.7V @ 15V, 10A

60W

-

Standard

-

400ns/400ns

300V, 10A, 100 Ohm, 15V

200ns

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-220SM

GT10G131(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 1W 8-SOIC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
Power - Max: 1W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 3.1µs/2µs
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)

封裝: 8-SOIC (0.173", 4.40mm Width)

庫存2,432

400V

-

200A

2.3V @ 4V, 200A

1W

-

Standard

-

3.1µs/2µs

-

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP (5.5x6.0)

GT20N135SRA-S1E

Toshiba Semiconductor and Storage

IGBT 1350V 40A TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 312 W
Switching Energy: -, 700µJ (off)
Input Type: Standard
Gate Charge: 185 nC
Td (on/off) @ 25°C: -
Test Condition: 300V, 40A, 39Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: -

庫存30

1350 V

40 A

80 A

2.4V @ 15V, 40A

312 W

-, 700µJ (off)

Standard

185 nC

-

300V, 40A, 39Ohm, 15V

-

175°C (TJ)

Through Hole

TO-247-3

TO-247

GT50JR21-STA1-E-S

Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN(OS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 230 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存42

600 V

50 A

100 A

2V @ 15V, 50A

230 W

-

Standard

-

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT15J341-S4X

Toshiba Semiconductor and Storage

IGBT 600V 15A TO220SIS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Power - Max: 30 W
Switching Energy: 300µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 60ns/170ns
Test Condition: 300V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr): 80 ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS

封裝: -

庫存60

600 V

15 A

60 A

2V @ 15V, 15A

30 W

300µJ (on), 300µJ (off)

Standard

-

60ns/170ns

300V, 15A, 33Ohm, 15V

80 ns

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220SIS

GT30J121-Q

Toshiba Semiconductor and Storage

IGBT 600V 30A 170W TO3PN

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Power - Max: 170 W
Switching Energy: 1mJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 90ns/300ns
Test Condition: 300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存171

600 V

30 A

60 A

2.45V @ 15V, 30A

170 W

1mJ (on), 800µJ (off)

Standard

-

90ns/300ns

300V, 30A, 24Ohm, 15V

-

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT30N135SRA-S1E

Toshiba Semiconductor and Storage

IGBT 1350V 60A TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
Power - Max: 348 W
Switching Energy: -, 1.3mJ (off)
Input Type: Standard
Gate Charge: 270 nC
Td (on/off) @ 25°C: -
Test Condition: 300V, 60A, 39Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: -

庫存3

1350 V

60 A

120 A

2.6V @ 15V, 60A

348 W

-, 1.3mJ (off)

Standard

270 nC

-

300V, 60A, 39Ohm, 15V

-

175°C (TJ)

Through Hole

TO-247-3

TO-247

GT50JR22-STA1-E-S

Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN(OS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Power - Max: 230 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存39

600 V

50 A

100 A

2.2V @ 15V, 50A

230 W

-

Standard

-

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT40RR21-STA1-E

Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Power - Max: 230 W
Switching Energy: -, 540µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: 280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr): 600 ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存63

1200 V

40 A

200 A

2.8V @ 15V, 40A

230 W

-, 540µJ (off)

Standard

-

280V, 40A, 10Ohm, 20V

600 ns

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT30J341-Q

Toshiba Semiconductor and Storage

IGBT 600V 59A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 59 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 230 W
Switching Energy: 800µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 80ns/280ns
Test Condition: 300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr): 50 ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存21

600 V

59 A

120 A

2V @ 15V, 30A

230 W

800µJ (on), 600µJ (off)

Standard

-

80ns/280ns

300V, 30A, 24Ohm, 15V

50 ns

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT40QR21-STA1-E-D

Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Power - Max: 230 W
Switching Energy: -, 290µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: 280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr): 600 ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存228

1200 V

40 A

80 A

2.7V @ 15V, 40A

230 W

-, 290µJ (off)

Standard

-

280V, 40A, 10Ohm, 20V

600 ns

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT50J341-Q

Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN IC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Power - Max: 200 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存288

600 V

50 A

100 A

2.2V @ 15V, 50A

200 W

-

Standard

-

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT40WR21-Q

Toshiba Semiconductor and Storage

IGBT 1350V 40A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A
Power - Max: 375 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存126

1350 V

40 A

80 A

5.9V @ 15V, 40A

375 W

-

Standard

-

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT50N322A

Toshiba Semiconductor and Storage

IGBT 1000V 50A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Power - Max: 156 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 800 ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存306

1000 V

50 A

120 A

2.8V @ 15V, 60A

156 W

-

Standard

-

800 ns

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT30J65MRB-S1E

Toshiba Semiconductor and Storage

650V SILICON N-CHANNEL IGBT, TO-

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Power - Max: 200 W
Switching Energy: 1.4mJ (on), 220µJ (off)
Input Type: Standard
Gate Charge: 70 nC
Td (on/off) @ 25°C: 75ns/400ns
Test Condition: 400V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr): 200 ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封裝: -

庫存237

650 V

60 A

-

1.8V @ 15V, 30A

200 W

1.4mJ (on), 220µJ (off)

Standard

70 nC

75ns/400ns

400V, 15A, 56Ohm, 15V

200 ns

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

GT20J341-S4X-S

Toshiba Semiconductor and Storage

DISCRETE IGBT TRANSISTOR TO-220S

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Power - Max: 45 W
Switching Energy: 500µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 60ns/240ns
Test Condition: 300V, 20A, 33Ohm, 15V
Reverse Recovery Time (trr): 90 ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS

封裝: -

庫存84

600 V

20 A

80 A

2V @ 15V, 20A

45 W

500µJ (on), 400µJ (off)

Standard

-

60ns/240ns

300V, 20A, 33Ohm, 15V

90 ns

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220SIS

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
GT50J121(Q)	Toshiba Semiconductor and Storage	IGBT 600V 50A 240W TO3P LH IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A Power - Max: 240W Switching Energy: 1.3mJ (on), 1.34mJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 90ns/300ns Test Condition: 300V, 50A, 13 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(LH)	封裝: TO-3PL	庫存4,736	600V	50A	100A	2.45V @ 15V, 50A	240W	1.3mJ (on), 1.34mJ (off)	Standard	-	90ns/300ns	300V, 50A, 13 Ohm, 15V	-	150°C (TJ)	Through Hole	TO-3PL	TO-3P(LH)
GT8G133(TE12L,Q)	Toshiba Semiconductor and Storage	IGBT 400V 600MW 8TSSOP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A Power - Max: 600mW Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 1.7µs/2µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存2,100	400V	-	150A	2.9V @ 4V, 150A	600mW	-	Standard	-	1.7µs/2µs	-	-	150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
GT60N321(Q)	Toshiba Semiconductor and Storage	IGBT 1000V 60A 170W TO3P LH IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A Power - Max: 170W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 330ns/700ns Test Condition: - Reverse Recovery Time (trr): 2.5µs Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(LH)	封裝: TO-3PL	庫存22,140	1000V	60A	120A	2.8V @ 15V, 60A	170W	-	Standard	-	330ns/700ns	-	2.5µs	150°C (TJ)	Through Hole	TO-3PL	TO-3P(LH)
GT10J312(Q)	Toshiba Semiconductor and Storage	IGBT 600V 10A 60W TO220SM IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 60W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 400ns/400ns Test Condition: 300V, 10A, 100 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-220SM	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存2,992	600V	10A	20A	2.7V @ 15V, 10A	60W	-	Standard	-	400ns/400ns	300V, 10A, 100 Ohm, 15V	200ns	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-220SM
GT10G131(TE12L,Q)	Toshiba Semiconductor and Storage	IGBT 400V 1W 8-SOIC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A Power - Max: 1W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 3.1µs/2µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	封裝: 8-SOIC (0.173", 4.40mm Width)	庫存2,432	400V	-	200A	2.3V @ 4V, 200A	1W	-	Standard	-	3.1µs/2µs	-	-	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
GT20N135SRA-S1E	Toshiba Semiconductor and Storage	IGBT 1350V 40A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 312 W Switching Energy: -, 700µJ (off) Input Type: Standard Gate Charge: 185 nC Td (on/off) @ 25°C: - Test Condition: 300V, 40A, 39Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: -	庫存30	1350 V	40 A	80 A	2.4V @ 15V, 40A	312 W	-, 700µJ (off)	Standard	185 nC	-	300V, 40A, 39Ohm, 15V	-	175°C (TJ)	Through Hole	TO-247-3	TO-247
GT50JR21-STA1-E-S	Toshiba Semiconductor and Storage	PB-F IGBT / TRANSISTOR TO-3PN(OS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 230 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存42	600 V	50 A	100 A	2V @ 15V, 50A	230 W	-	Standard	-	-	-	-	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT15J341-S4X	Toshiba Semiconductor and Storage	IGBT 600V 15A TO220SIS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 30 W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 60ns/170ns Test Condition: 300V, 15A, 33Ohm, 15V Reverse Recovery Time (trr): 80 ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS	封裝: -	庫存60	600 V	15 A	60 A	2V @ 15V, 15A	30 W	300µJ (on), 300µJ (off)	Standard	-	60ns/170ns	300V, 15A, 33Ohm, 15V	80 ns	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS
GT30J121-Q	Toshiba Semiconductor and Storage	IGBT 600V 30A 170W TO3PN IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A Power - Max: 170 W Switching Energy: 1mJ (on), 800µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 90ns/300ns Test Condition: 300V, 30A, 24Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存171	600 V	30 A	60 A	2.45V @ 15V, 30A	170 W	1mJ (on), 800µJ (off)	Standard	-	90ns/300ns	300V, 30A, 24Ohm, 15V	-	-	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT30N135SRA-S1E	Toshiba Semiconductor and Storage	IGBT 1350V 60A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A Power - Max: 348 W Switching Energy: -, 1.3mJ (off) Input Type: Standard Gate Charge: 270 nC Td (on/off) @ 25°C: - Test Condition: 300V, 60A, 39Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: -	庫存3	1350 V	60 A	120 A	2.6V @ 15V, 60A	348 W	-, 1.3mJ (off)	Standard	270 nC	-	300V, 60A, 39Ohm, 15V	-	175°C (TJ)	Through Hole	TO-247-3	TO-247
GT50JR22-STA1-E-S	Toshiba Semiconductor and Storage	PB-F IGBT / TRANSISTOR TO-3PN(OS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 230 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存39	600 V	50 A	100 A	2.2V @ 15V, 50A	230 W	-	Standard	-	-	-	-	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT40RR21-STA1-E	Toshiba Semiconductor and Storage	IGBT 1200V 40A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A Power - Max: 230 W Switching Energy: -, 540µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: 280V, 40A, 10Ohm, 20V Reverse Recovery Time (trr): 600 ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存63	1200 V	40 A	200 A	2.8V @ 15V, 40A	230 W	-, 540µJ (off)	Standard	-	-	280V, 40A, 10Ohm, 20V	600 ns	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT30J341-Q	Toshiba Semiconductor and Storage	IGBT 600V 59A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 59 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 230 W Switching Energy: 800µJ (on), 600µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 80ns/280ns Test Condition: 300V, 30A, 24Ohm, 15V Reverse Recovery Time (trr): 50 ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存21	600 V	59 A	120 A	2V @ 15V, 30A	230 W	800µJ (on), 600µJ (off)	Standard	-	80ns/280ns	300V, 30A, 24Ohm, 15V	50 ns	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT40QR21-STA1-E-D	Toshiba Semiconductor and Storage	IGBT 1200V 40A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 230 W Switching Energy: -, 290µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: 280V, 40A, 10Ohm, 20V Reverse Recovery Time (trr): 600 ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存228	1200 V	40 A	80 A	2.7V @ 15V, 40A	230 W	-, 290µJ (off)	Standard	-	-	280V, 40A, 10Ohm, 20V	600 ns	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT50J341-Q	Toshiba Semiconductor and Storage	PB-F IGBT / TRANSISTOR TO-3PN IC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 200 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存288	600 V	50 A	100 A	2.2V @ 15V, 50A	200 W	-	Standard	-	-	-	-	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT40WR21-Q	Toshiba Semiconductor and Storage	IGBT 1350V 40A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A Power - Max: 375 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存126	1350 V	40 A	80 A	5.9V @ 15V, 40A	375 W	-	Standard	-	-	-	-	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT50N322A	Toshiba Semiconductor and Storage	IGBT 1000V 50A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A Power - Max: 156 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 800 ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存306	1000 V	50 A	120 A	2.8V @ 15V, 60A	156 W	-	Standard	-	-	-	800 ns	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT30J65MRB-S1E	Toshiba Semiconductor and Storage	650V SILICON N-CHANNEL IGBT, TO- IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 200 W Switching Energy: 1.4mJ (on), 220µJ (off) Input Type: Standard Gate Charge: 70 nC Td (on/off) @ 25°C: 75ns/400ns Test Condition: 400V, 15A, 56Ohm, 15V Reverse Recovery Time (trr): 200 ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封裝: -	庫存237	650 V	60 A	-	1.8V @ 15V, 30A	200 W	1.4mJ (on), 220µJ (off)	Standard	70 nC	75ns/400ns	400V, 15A, 56Ohm, 15V	200 ns	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
GT20J341-S4X-S	Toshiba Semiconductor and Storage	DISCRETE IGBT TRANSISTOR TO-220S IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 45 W Switching Energy: 500µJ (on), 400µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 60ns/240ns Test Condition: 300V, 20A, 33Ohm, 15V Reverse Recovery Time (trr): 90 ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS	封裝: -	庫存84	600 V	20 A	80 A	2V @ 15V, 20A	45 W	500µJ (on), 400µJ (off)	Standard	-	60ns/240ns	300V, 20A, 33Ohm, 15V	90 ns	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS