Rohm Semiconductor 產品

TCM1C105M8R

Rohm Semiconductor

CAP TANT 1UF 16V 20% 0603

• Capacitance: 1µF
• Tolerance: ±20%
• Voltage - Rated: 16V
• Type: Molded
• ESR (Equivalent Series Resistance): -
• Operating Temperature: -55°C ~ 125°C
• Lifetime @ Temp.: -
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Size / Dimension: 0.063" L x 0.033" W (1.60mm x 0.85mm)
• Height - Seated (Max): 0.035" (0.90mm)
• Lead Spacing: -
• Manufacturer Size Code: M
• Features: General Purpose
• Failure Rate: -

封裝: 0603 (1608 Metric)

TCA1A475M8R

Rohm Semiconductor

CAP TANT 4.7UF 10V 20% 1206

• Capacitance: 4.7µF
• Tolerance: ±20%
• Voltage - Rated: 10V
• Type: Molded
• ESR (Equivalent Series Resistance): 4.2 Ohm
• Operating Temperature: -55°C ~ 125°C
• Lifetime @ Temp.: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.071" (1.80mm)
• Lead Spacing: -
• Manufacturer Size Code: A
• Features: General Purpose
• Failure Rate: -

封裝: 1206 (3216 Metric)

R6007KNJTL

Rohm Semiconductor

MOSFET N-CH 600V 7A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DTD543XETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

封裝: SC-75, SOT-416

EDZTE6113B

Rohm Semiconductor

DIODE ZENER 13V 150MW EMD2

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±2%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 37 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: EMD2

封裝: SC-79, SOD-523

BD45251G-TR

Rohm Semiconductor

IC RESET OD 2.5V 100MS 5SSOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 90 ms Minimum
• Voltage - Threshold: 2.5V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

封裝: SC-74A, SOT-753

BR25G128NUX-3TR

Rohm Semiconductor

IC EEPROM 128KBIT 20MHZ 8VSON

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 128Kb (16K x 8)
• Memory Interface: SPI
• Clock Frequency: 20MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: VSON008X2030

封裝: 8-UFDFN Exposed Pad

BU4551BF-E2

Rohm Semiconductor

IC MUX/DEMUX QUAD 1X2 16SOP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 4
• On-State Resistance (Max): 280 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 3 V ~ 16 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 10pF
• Current - Leakage (IS(off)) (Max): 300nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 16-SOP

封裝: 16-SOIC (0.173", 4.40mm Width)

MNR14ERAPJ101

Rohm Semiconductor

RES ARRAY 4 RES 100 OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 100
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

封裝: 1206 (3216 Metric), Convex, Long Side Terminals

MCR03ERTF16R2

Rohm Semiconductor

RES SMD 16.2 OHM 1% 1/10W 0603

• Resistance: 16.2 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

MCR18EZHF1073

Rohm Semiconductor

RES SMD 107K OHM 1% 1/4W 1206

• Resistance: 107 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR10EZHF7152

Rohm Semiconductor

RES SMD 71.5K OHM 1% 1/8W 0805

• Resistance: 71.5 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

MCR03EZPJ623

Rohm Semiconductor

RES SMD 62K OHM 5% 1/10W 0603

• Resistance: 62 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

MCR03EZPFX6493

Rohm Semiconductor

RES SMD 649K OHM 1% 1/10W 0603

• Resistance: 649 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

MCR03EZPFX6193

Rohm Semiconductor

RES SMD 619K OHM 1% 1/10W 0603

• Resistance: 619 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

KTR18EZPF54R9

Rohm Semiconductor

RES SMD 54.9 OHM 1% 1/4W 1206

• Resistance: 54.9 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR01MRTF51R0

Rohm Semiconductor

RES SMD 51 OHM 1% 1/16W 0402

• Resistance: 51 Ohms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0402 (1005 Metric)

MCR18ERTF14R0

Rohm Semiconductor

RES SMD 14 OHM 1% 1/4W 1206

• Resistance: 14 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR10ERTF3571

Rohm Semiconductor

RES SMD 3.57K OHM 1% 1/8W 0805

• Resistance: 3.57 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

KTR10EZPF3833

Rohm Semiconductor

RES SMD 383K OHM 1% 1/8W 0805

• Resistance: 383 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

KTR18EZPF8253

Rohm Semiconductor

RES SMD 825K OHM 1% 1/4W 1206

• Resistance: 825 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

ESR18EZPJ222

Rohm Semiconductor

RES SMD 2.2K OHM 5% 1/3W 1206

• Resistance: 2.2 kOhms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

BD25GA5MEFJ-LBH2

Rohm Semiconductor

IC REG LIN 2.5V 500MA 8HTSOP-J

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 14V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.2V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.2mA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Soft Start
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

封裝: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

BU45K334G-TL

Rohm Semiconductor

PWR MGMT SUPERVISORY

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 240ms Minimum
• Voltage - Threshold: 3.3V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-SSOP

封裝: TO-236-3, SC-59, SOT-23-3

YFZVFHTR6-8B

Rohm Semiconductor

DIODE ZENER 6.66V 500MW TUMD2M

• Voltage - Zener (Nom) (Vz): 6.66 V
• Tolerance: ±2.55%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2M

封裝: -

BAW56HMFHT116

Rohm Semiconductor

DIODE ARRAY GP 80V 215MA SSD3

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io) (per Diode): 215mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 80 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SSD3

封裝: -

RGCL60TK60GC11

Rohm Semiconductor

IGBT TRNCH FIELD 600V 30A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
• Power - Max: 54 W
• Switching Energy: 770µJ (on), 1.11mJ (off)
• Input Type: Standard
• Gate Charge: 68 nC
• Td (on/off) @ 25°C: 44ns/186ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

封裝: -

SCT3060AW7TL

Rohm Semiconductor

SICFET N-CH 650V 38A TO263-7

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
• Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
• Vgs (Max): +22V, -4V
• FET Feature: -
• Power Dissipation (Max): 159W
• Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封裝: -