頁 2 - Rohm Semiconductor 產品 - 電晶體 - 雙極 (BJT) - 陣列、預偏壓

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
EMD12FHAT2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA	-	47kOhms	47kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMF17NTR	Rohm Semiconductor	TRANS DIGITAL BJT NPN/PNP 50V 10 Transistor Type: 1 NPN - Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 140MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	Request a Quote	100mA, 150mA	50V	2.2kOhms	2.2kOhms	20 @ 20mA, 5V / 180 @ 1mA, 6V	300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA	500nA, 100nA (ICBO)	250MHz, 140MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMD38T2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA / 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	庫存48,000	100mA	50V	1kOhms	47kOhms, 10kOhms	68 @ 5mA, 5V	300mV @ 250µA, 5mA / 300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMD22FHAT2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA	-	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMF18NTR	Rohm Semiconductor	TRANS DIGITAL BJT NPN/PNP 50V 10 Transistor Type: 1 NPN - Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 140MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	Request a Quote	100mA, 150mA	50V	47kOhms	47kOhms	68 @ 5mA, 5V / 180 @ 1mA, 6V	300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA	500nA, 100nA (ICBO)	250MHz, 140MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMB10NFHATN	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (CORR Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存38,307	100mA	-	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMH11NFHATN	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存7,101	100mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMF4T2R	Rohm Semiconductor	TRANS DIGITAL BJT NPN/PNP 12V 10 Transistor Type: 1 NPN - Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA, 500mA	50V, 12V	2.2kOhms	2.2kOhms	20 @ 20mA, 5V / 270 @ 10mA, 2V	300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA	500nA, 100nA (ICBO)	250MHz, 260MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMH4NFHATN	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存17,907	100mA	50V	10kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMF7T2R	Rohm Semiconductor	TRANS DIGITAL BJT NPN 12V 500MA/ Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 320MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA, 500mA	50V, 12V	2.2kOhms	2.2kOhms	20 @ 20mA, 5V / 270 @ 10mA, 2V	300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA	500nA, 100nA (ICBO)	250MHz, 320MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMH10FHAT2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	庫存141	100mA	-	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMH33NTN	Rohm Semiconductor	NPN+NPN, SOT-363, DUAL DIGITAL T Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 35MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存7,965	400mA	20V	2.2kOhms	-	820 @ 10mA, 5V	100mV @ 3mA, 30mA	500nA (ICBO)	35MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMH25T2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR(WITH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	庫存279	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMD25NTR	Rohm Semiconductor	UMD25N IS A DIGITAL TRANSISTOR C Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存35,520	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMH25FHAT2R	Rohm Semiconductor	TRANS 2NPN 100MA EMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA	-	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMD6FHAT2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA	50V	4.7kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMH37NTN	Rohm Semiconductor	NPN+NPN, SOT-363, DUAL DIGITAL T Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 35MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存9,000	400mA	20V	10kOhms	-	820 @ 10mA, 5V	100mV @ 3mA, 30mA	500nA (ICBO)	35MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMF7NTR	Rohm Semiconductor	TRANS DIGITAL BJT NPN 12V/50V 50 Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 320MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	Request a Quote	100mA, 500mA	50V, 12V	2.2kOhms	2.2kOhms	20 @ 20mA, 5V / 270 @ 10mA, 2V	300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA	500nA, 100nA (ICBO)	250MHz, 320MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMB11NFHATN	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (CORR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存3,045	100mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMB10FHAT2R	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (CORR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMF20NTR	Rohm Semiconductor	TRANS DIGITAL BJT NPN 50V 150MA/ Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 180MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	Request a Quote	100mA, 150mA	50V	47kOhms	47kOhms	20 @ 20mA, 5V / 180 @ 1mA, 6V	300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA	500nA, 100nA (ICBO)	250MHz, 180MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMD6NFHATR	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	庫存18,000	100mA	50V	4.7kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
FMC2T148	Rohm Semiconductor	TRANS DGTL BJT NPN/PNP SMT5 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
EMB2FHAT2R	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (CORR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	庫存23,700	100mA	50V	47kOhms	47kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMH11FHAT2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA	-	10kOhms	10kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMH1FHAT2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: -	Request a Quote	100mA	-	22kOhms	22kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMF22NTR	Rohm Semiconductor	TRANS DIGITAL BJT NPN 12V 500MA/ Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 500mA, 100mA Voltage - Collector Emitter Breakdown (Max): 12V, 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V / 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA / 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO), 500nA Frequency - Transition: 250MHz, 320MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封裝: -	Request a Quote	500mA, 100mA	12V, 50V	10kOhms	10kOhms	270 @ 10mA, 2V / 30 @ 5mA, 5V	250mV @ 10mA, 200mA / 300mV @ 500µA, 10mA	100nA (ICBO), 500nA	250MHz, 320MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMF25NTR	Rohm Semiconductor	LINEAR IC Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

EMD12FHAT2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

Request a Quote

100mA

-

47kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMF17NTR

Rohm Semiconductor

TRANS DIGITAL BJT NPN/PNP 50V 10

Transistor Type: 1 NPN - Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 140MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

Request a Quote

100mA, 150mA

50V

2.2kOhms

20 @ 20mA, 5V / 180 @ 1mA, 6V

300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA

500nA, 100nA (ICBO)

250MHz, 140MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMD38T2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms, 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA / 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

庫存48,000

100mA

50V

1kOhms

47kOhms, 10kOhms

68 @ 5mA, 5V

300mV @ 250µA, 5mA / 300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMD22FHAT2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

Request a Quote

100mA

-

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMF18NTR

Rohm Semiconductor

TRANS DIGITAL BJT NPN/PNP 50V 10

Transistor Type: 1 NPN - Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 140MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

Request a Quote

100mA, 150mA

50V

47kOhms

68 @ 5mA, 5V / 180 @ 1mA, 6V

300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA

500nA, 100nA (ICBO)

250MHz, 140MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMB10NFHATN

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存38,307

100mA

-

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMH11NFHATN

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存7,101

100mA

50V

10kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMF4T2R

Rohm Semiconductor

TRANS DIGITAL BJT NPN/PNP 12V 10

Transistor Type: 1 NPN - Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

Request a Quote

100mA, 500mA

50V, 12V

2.2kOhms

20 @ 20mA, 5V / 270 @ 10mA, 2V

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

500nA, 100nA (ICBO)

250MHz, 260MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMH4NFHATN

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存17,907

100mA

50V

10kOhms

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMF7T2R

Rohm Semiconductor

TRANS DIGITAL BJT NPN 12V 500MA/

Transistor Type: 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 320MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

Request a Quote

100mA, 500mA

50V, 12V

2.2kOhms

20 @ 20mA, 5V / 270 @ 10mA, 2V

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

500nA, 100nA (ICBO)

250MHz, 320MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMH10FHAT2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

庫存141

100mA

-

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMH33NTN

Rohm Semiconductor

NPN+NPN, SOT-363, DUAL DIGITAL T

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 35MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存7,965

400mA

20V

2.2kOhms

-

820 @ 10mA, 5V

100mV @ 3mA, 30mA

500nA (ICBO)

35MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMH25T2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR(WITH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

庫存279

100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMD25NTR

Rohm Semiconductor

UMD25N IS A DIGITAL TRANSISTOR C

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存35,520

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMH25FHAT2R

Rohm Semiconductor

TRANS 2NPN 100MA EMT6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

Request a Quote

100mA

-

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMD6FHAT2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

Request a Quote

100mA

50V

4.7kOhms

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMH37NTN

Rohm Semiconductor

NPN+NPN, SOT-363, DUAL DIGITAL T

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 35MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存9,000

400mA

20V

10kOhms

-

820 @ 10mA, 5V

100mV @ 3mA, 30mA

500nA (ICBO)

35MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMF7NTR

Rohm Semiconductor

TRANS DIGITAL BJT NPN 12V/50V 50

Transistor Type: 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 320MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

Request a Quote

100mA, 500mA

50V, 12V

2.2kOhms

20 @ 20mA, 5V / 270 @ 10mA, 2V

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

500nA, 100nA (ICBO)

250MHz, 320MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMB11NFHATN

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存3,045

100mA

50V

10kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMB10FHAT2R

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

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100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMF20NTR

Rohm Semiconductor

TRANS DIGITAL BJT NPN 50V 150MA/

Transistor Type: 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 180MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

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100mA, 150mA

50V

47kOhms

20 @ 20mA, 5V / 180 @ 1mA, 6V

300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA

500nA, 100nA (ICBO)

250MHz, 180MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMD6NFHATR

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

庫存18,000

100mA

50V

4.7kOhms

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

FMC2T148

Rohm Semiconductor

TRANS DGTL BJT NPN/PNP SMT5

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

EMB2FHAT2R

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

庫存23,700

100mA

50V

47kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMH11FHAT2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

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100mA

-

10kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMH1FHAT2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: -

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100mA

-

22kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMF22NTR

Rohm Semiconductor

TRANS DIGITAL BJT NPN 12V 500MA/

Transistor Type: 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 500mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 12V, 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V / 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA / 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO), 500nA
Frequency - Transition: 250MHz, 320MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封裝: -

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500mA, 100mA

12V, 50V

10kOhms

270 @ 10mA, 2V / 30 @ 5mA, 5V

250mV @ 10mA, 200mA / 300mV @ 500µA, 10mA

100nA (ICBO), 500nA

250MHz, 320MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMF25NTR

Rohm Semiconductor

LINEAR IC

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

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