頁 7 - Rohm Semiconductor 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RB162MM-40TFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	封裝: -	Request a Quote	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RB161SS-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A KMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: KMD2 Operating Temperature - Junction: 125°C	封裝: -	Request a Quote	30 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	-	Surface Mount	0603 (1608 Metric)	KMD2	125°C
BAT54HYFHT116	Rohm Semiconductor	DIODE SCHOTTKY 30V 200MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 12pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C	封裝: -	庫存7,218	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	2 µA @ 25 V	12pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C
BAS40HYFHT116	Rohm Semiconductor	DIODE SCHOTTKY 40V 120MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C	封裝: -	庫存11,430	40 V	120mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 40 V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C
RB530SM-30FHT2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 200MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存38,439	30 V	200mA	450 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 10 V	-	Surface Mount	SC-79, SOD-523	EMD2	150°C (Max)
RSX071VAM30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 700MA TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 420 mV @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.6 ns Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存24,711	30 V	700mA	420 mV @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	9.6 ns	200 µA @ 30 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
YQ2VWM10BTFTR	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 2A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	封裝: -	庫存9,000	100 V	2A	770 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 100 V	50pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
1SS400FTE61	Rohm Semiconductor	DIODE GENERAL PURPOSE SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RB068VWM-60TR	Rohm Semiconductor	DIODE SCHOTTKY 60V 2A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	封裝: -	庫存17,490	60 V	2A	840 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 60 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
SCS210AGC17	Rohm Semiconductor	DIODE SIC 650V 10A TO220ACFP Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 600 V Capacitance @ Vr, F: 365pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C	封裝: -	庫存5,829	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220ACFP	175°C
RB075BM40SFNSTL	Rohm Semiconductor	40V, 5A, TO-252, SUPER LOW IR RB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 175°C	封裝: -	庫存7,428	40 V	5A	750 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 40 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	175°C
RBR3LAM40ATFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存16,995	40 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RB168LAM100TFTR	Rohm Semiconductor	DIODE SCHOTTKY 100V 1A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 nA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存4,152	100 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	400 nA @ 100 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RBR1VWM40ATR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 150°C	封裝: -	庫存8,976	40 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	150°C
RR1VWM6STFTR	Rohm Semiconductor	DIODE GEN PURP 600V 1A PMDE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C (Max)	封裝: -	庫存25,914	600 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C (Max)
YQ12RSM10SDTL1	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 12A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 90 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	封裝: -	庫存12,000	100 V	12A	670 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
RB561VM-40TE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 500MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	封裝: -	庫存352,011	40 V	500mA	560 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
RFN1LAM7STFTR	Rohm Semiconductor	DIODE GEN PURP 700V 800MA PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 1 µA @ 700 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存53,139	700 V	800mA	1.5 V @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	1 µA @ 700 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RB578VYM100FHTR	Rohm Semiconductor	DIODE SCHOTTKY 100V 700MA TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.35 ns Current - Reverse Leakage @ Vr: 200 nA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存4,263	100 V	700mA	850 mV @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.35 ns	200 nA @ 100 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
RB550VM-30FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 30V 500MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存17,358	30 V	500mA	590 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	35 µA @ 30 V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
RB088LAM100TFTR	Rohm Semiconductor	DIODE SCHOTTKY 100V 5A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存8,241	100 V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	3 µA @ 100 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RFN10NS3STL	Rohm Semiconductor	DIODE GEN PURP 350V 10A LPDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 350 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS Operating Temperature - Junction: 150°C	封裝: -	庫存2,955	350 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 350 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPDS	150°C
RFN20TJ6SGC9	Rohm Semiconductor	DIODE GP 600V 20A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存2,136	600 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220ACFP	150°C (Max)
RB520S-30UMTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RBR1MM60ATFTR	Rohm Semiconductor	DIODE SCHOTTKY 60V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存266,091	60 V	1A	530 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	75 µA @ 60 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
YQ3LAM10DTFTR	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 100 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C	封裝: -	庫存10,500	100 V	3A	640 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	140pF @ 4V, 1MHz	Surface Mount	SOD-128	PMDTM	175°C
RB168MM200TR	Rohm Semiconductor	DIODE SCHOTTKY 200V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 850 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 175°C	封裝: -	庫存3,000	200 V	1A	890 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	850 nA @ 200 V	-	Surface Mount	SOD-123F	PMDU	175°C
RB520ASA-30FHT2RB	Rohm Semiconductor	LOW VF, 30V, 200MA, DFN1006-2W, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount, Wettable Flank Package / Case: SOD-882 Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 150°C	封裝: -	庫存24,000	30 V	200mA	580 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 10 V	-	Surface Mount, Wettable Flank	SOD-882	DFN1006-2W	150°C

RB162MM-40TFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

封裝: -

Request a Quote

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RB161SS-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A KMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C

封裝: -

Request a Quote

30 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 30 V

-

Surface Mount

0603 (1608 Metric)

KMD2

125°C

BAT54HYFHT116

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C

封裝: -

庫存7,218

30 V

200mA

800 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

2 µA @ 25 V

12pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C

BAS40HYFHT116

Rohm Semiconductor

DIODE SCHOTTKY 40V 120MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C

封裝: -

庫存11,430

40 V

120mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 40 V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C

RB530SM-30FHT2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存38,439

30 V

200mA

450 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

500 nA @ 10 V

-

Surface Mount

SC-79, SOD-523

EMD2

150°C (Max)

RSX071VAM30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 700MA TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 700 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.6 ns
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存24,711

30 V

700mA

420 mV @ 700 mA

Fast Recovery =< 500ns, > 200mA (Io)

9.6 ns

200 µA @ 30 V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

YQ2VWM10BTFTR

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 2A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

封裝: -

庫存9,000

100 V

2A

770 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 100 V

50pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

1SS400FTE61

Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

RB068VWM-60TR

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

封裝: -

庫存17,490

60 V

2A

840 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 nA @ 60 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

SCS210AGC17

Rohm Semiconductor

DIODE SIC 650V 10A TO220ACFP

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C

封裝: -

庫存5,829

650 V

10A

1.55 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 600 V

365pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220ACFP

175°C

RB075BM40SFNSTL

Rohm Semiconductor

40V, 5A, TO-252, SUPER LOW IR RB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C

封裝: -

庫存7,428

40 V

5A

750 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 µA @ 40 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

175°C

RBR3LAM40ATFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存16,995

40 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RB168LAM100TFTR

Rohm Semiconductor

DIODE SCHOTTKY 100V 1A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 nA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存4,152

100 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

400 nA @ 100 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RBR1VWM40ATR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 150°C

封裝: -

庫存8,976

40 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

150°C

RR1VWM6STFTR

Rohm Semiconductor

DIODE GEN PURP 600V 1A PMDE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C (Max)

封裝: -

庫存25,914

600 V

1A

1.2 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C (Max)

YQ12RSM10SDTL1

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 12A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 90 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C

封裝: -

庫存12,000

100 V

12A

670 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

90 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

175°C

RB561VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)

封裝: -

庫存352,011

40 V

500mA

560 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

UMD2

125°C (Max)

RFN1LAM7STFTR

Rohm Semiconductor

DIODE GEN PURP 700V 800MA PMDTM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 700 V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存53,139

700 V

800mA

1.5 V @ 800 mA

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

1 µA @ 700 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RB578VYM100FHTR

Rohm Semiconductor

DIODE SCHOTTKY 100V 700MA TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 700 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.35 ns
Current - Reverse Leakage @ Vr: 200 nA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存4,263

100 V

700mA

850 mV @ 700 mA

Fast Recovery =< 500ns, > 200mA (Io)

4.35 ns

200 nA @ 100 V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

RB550VM-30FHTE-17

Rohm Semiconductor

DIODE SCHOTTKY 30V 500MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存17,358

30 V

500mA

590 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

35 µA @ 30 V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

RB088LAM100TFTR

Rohm Semiconductor

DIODE SCHOTTKY 100V 5A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存8,241

100 V

5A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

3 µA @ 100 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RFN10NS3STL

Rohm Semiconductor

DIODE GEN PURP 350V 10A LPDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 350 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C

封裝: -

庫存2,955

350 V

10A

1.5 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 350 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPDS

150°C

RFN20TJ6SGC9

Rohm Semiconductor

DIODE GP 600V 20A TO220ACFP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存2,136

600 V

20A

1.55 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

140 ns

10 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack

TO-220ACFP

150°C (Max)

RB520S-30UMTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

RBR1MM60ATFTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存266,091

60 V

1A

530 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

75 µA @ 60 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

YQ3LAM10DTFTR

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 3A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C

封裝: -

庫存10,500

100 V

3A

640 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 100 V

140pF @ 4V, 1MHz

Surface Mount

SOD-128

PMDTM

175°C

RB168MM200TR

Rohm Semiconductor

DIODE SCHOTTKY 200V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C

封裝: -

庫存3,000

200 V

1A

890 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

850 nA @ 200 V

-

Surface Mount

SOD-123F

PMDU

175°C

RB520ASA-30FHT2RB

Rohm Semiconductor

LOW VF, 30V, 200MA, DFN1006-2W,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount, Wettable Flank
Package / Case: SOD-882
Supplier Device Package: DFN1006-2W
Operating Temperature - Junction: 150°C

封裝: -

庫存24,000

30 V

200mA

580 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

1 µA @ 10 V

-

Surface Mount, Wettable Flank

SOD-882

DFN1006-2W

150°C