頁 3 - NXP 產品 - 電晶體 - FET、MOSFET - RF

零件編號	製造商	描述	封裝	庫存	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
A3G26H502W17SR3	NXP	RF MOSFET GAN 48V NI780 Transistor Type: GaN Frequency: 2.496GHz ~ 2.69GHz Gain: 13.1dB Voltage - Test: 48 V Current Rating: - Noise Figure: - Current - Test: 370 mA Power - Output: 80W Voltage - Rated: 125 V Package / Case: NI-780-4S2S Supplier Device Package: NI-780-4S2S	封裝: -	Request a Quote	2.496GHz ~ 2.69GHz	13.1dB	48 V	-	-	370 mA	80W	125 V	NI-780-4S2S	NI-780-4S2S
A2T27S020GNR1	NXP	RF MOSFET LDMOS 28V TO270-2 Transistor Type: LDMOS Frequency: 400MHz ~ 2.7GHz Gain: 21dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 185 mA Power - Output: 20W Voltage - Rated: 65 V Package / Case: TO-270BA Supplier Device Package: TO-270-2 GULL	封裝: -	Request a Quote	400MHz ~ 2.7GHz	21dB	28 V	10µA	-	185 mA	20W	65 V	TO-270BA	TO-270-2 GULL
MMRF5018HS-450	NXP	RF MOSFET NI400 Transistor Type: - Frequency: 1MHz ~ 2.7GHz Gain: 17.3dB Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: 125W Voltage - Rated: 125 V Package / Case: NI-400S-2SA Supplier Device Package: NI-400S-2SA	封裝: -	Request a Quote	1MHz ~ 2.7GHz	17.3dB	-	-	-	-	125W	125 V	NI-400S-2SA	NI-400S-2SA
A3I25D080GNR1	NXP	RF MOSFET LDMOS 28V TO270-17 Transistor Type: LDMOS Frequency: 2.3GHz ~ 2.69GHz Gain: 29.2dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 175 mA Power - Output: 8.3W Voltage - Rated: 65 V Package / Case: TO-270-17 Variant, Gull Wing Supplier Device Package: TO-270WBG-17	封裝: -	Request a Quote	2.3GHz ~ 2.69GHz	29.2dB	28 V	10µA	-	175 mA	8.3W	65 V	TO-270-17 Variant, Gull Wing	TO-270WBG-17
A2G35S200-01SR3	NXP	RF MOSFET GAN HEMT 48V NI400 Transistor Type: GaN HEMT Frequency: 3.4GHz ~ 3.6GHz Gain: 16.1dB Voltage - Test: 48 V Current Rating: - Noise Figure: - Current - Test: 291 mA Power - Output: 180W Voltage - Rated: 125 V Package / Case: NI-400S-2S Supplier Device Package: NI-400S-2S	封裝: -	庫存231	3.4GHz ~ 3.6GHz	16.1dB	48 V	-	-	291 mA	180W	125 V	NI-400S-2S	NI-400S-2S
A5G38H045N-3700	NXP	RF MOSFET 6DFN Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: 5W Voltage - Rated: - Package / Case: 6-LDFN Exposed Pad Supplier Device Package: 6-PDFN (7x6.5)	封裝: -	Request a Quote	-	-	-	-	-	-	5W	-	6-LDFN Exposed Pad	6-PDFN (7x6.5)
A3G22H400-04SR3	NXP	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
AFT27S012NT1	NXP	RF MOSFET LDMOS 28V PLD-1.5W Transistor Type: LDMOS Frequency: 728MHz ~ 2.7GHz Gain: 20.9dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 90 mA Power - Output: 13W Voltage - Rated: 65 V Package / Case: PLD-1.5W Supplier Device Package: PLD-1.5W	封裝: -	Request a Quote	728MHz ~ 2.7GHz	20.9dB	28 V	10µA	-	90 mA	13W	65 V	PLD-1.5W	PLD-1.5W
MMRF5018HSR5	NXP	RF MOSFET GAN NI400 Transistor Type: GaN Frequency: 1MHz ~ 2.7GHz Gain: 17.3dB Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: 125W Voltage - Rated: 125 V Package / Case: NI-400S-2SA Supplier Device Package: NI-400S-2SA	封裝: -	Request a Quote	1MHz ~ 2.7GHz	17.3dB	-	-	-	-	125W	125 V	NI-400S-2SA	NI-400S-2SA
MHT2025NR1	NXP	RF MOSFET LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
A5G23H110NT4	NXP	RF MOSFET 48V 6DFN Transistor Type: - Frequency: 2.3GHz ~ 2.4GHz Gain: 17.9dB Voltage - Test: 48 V Current Rating: - Noise Figure: - Current - Test: 60 mA Power - Output: 13.8W Voltage - Rated: 125 V Package / Case: 6-LDFN Exposed Pad Supplier Device Package: 6-PDFN (7x6.5)	封裝: -	Request a Quote	2.3GHz ~ 2.4GHz	17.9dB	48 V	-	-	60 mA	13.8W	125 V	6-LDFN Exposed Pad	6-PDFN (7x6.5)
A3I25D080NR1	NXP	RF MOSFET LDMOS 28V TO270-17 Transistor Type: LDMOS Frequency: 2.3GHz ~ 2.69GHz Gain: 29.2dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 175 mA Power - Output: 8.3W Voltage - Rated: 65 V Package / Case: TO-270-17 Variant, Flat Leads Supplier Device Package: TO-270WB-17	封裝: -	Request a Quote	2.3GHz ~ 2.69GHz	29.2dB	28 V	10µA	-	175 mA	8.3W	65 V	TO-270-17 Variant, Flat Leads	TO-270WB-17
A3V07H600-42NR6	NXP	RF MOSFET LDMOS 48V OM1230-6 Transistor Type: LDMOS Frequency: 616MHz ~ 870MHz Gain: 16.9dB Voltage - Test: 48 V Current Rating: 10µA Noise Figure: - Current - Test: 900 mA Power - Output: 112W Voltage - Rated: 105 V Package / Case: OM-1230-6L Supplier Device Package: OM-1230-6L	封裝: -	Request a Quote	616MHz ~ 870MHz	16.9dB	48 V	10µA	-	900 mA	112W	105 V	OM-1230-6L	OM-1230-6L
A2G35S160-01SR3	NXP	RF MOSFET GAN 48V NI400 Transistor Type: GaN Frequency: 3.4GHz ~ 3.6GHz Gain: 15.7dB Voltage - Test: 48 V Current Rating: - Noise Figure: - Current - Test: 190 mA Power - Output: 51dBm Voltage - Rated: 125 V Package / Case: NI-400S-2S Supplier Device Package: NI-400S-2S	封裝: -	庫存516	3.4GHz ~ 3.6GHz	15.7dB	48 V	-	-	190 mA	51dBm	125 V	NI-400S-2S	NI-400S-2S
A2T18S165-12SR3	NXP	RF MOSFET LDMOS 28V NI780 Transistor Type: LDMOS Frequency: 1.805GHz ~ 1.995GHz Gain: 18dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 800 mA Power - Output: 148W Voltage - Rated: 65 V Package / Case: NI-780-2S2L Supplier Device Package: NI-780-2S2L	封裝: -	Request a Quote	1.805GHz ~ 1.995GHz	18dB	28 V	10µA	-	800 mA	148W	65 V	NI-780-2S2L	NI-780-2S2L
AFM906NT1	NXP	RF MOSFET LDMOS 10.8V 16DFN Transistor Type: LDMOS Frequency: 136MHz ~ 941MHz Gain: - Voltage - Test: 10.8 V Current Rating: 2µA Noise Figure: - Current - Test: 100 mA Power - Output: 6.8W Voltage - Rated: 30 V Package / Case: 16-VDFN Exposed Pad Supplier Device Package: 16-DFN (4x6)	封裝: -	庫存2,826	136MHz ~ 941MHz	-	10.8 V	2µA	-	100 mA	6.8W	30 V	16-VDFN Exposed Pad	16-DFN (4x6)
MHTG1200HSR3	NXP	RF MOSFET GAN NI780 Transistor Type: GaN Frequency: 2.4GHz ~ 2.5GHz Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: 300W Voltage - Rated: 50 V Package / Case: NI-780S-4L Supplier Device Package: NI-780S-4L	封裝: -	Request a Quote	2.4GHz ~ 2.5GHz	-	-	-	-	-	300W	50 V	NI-780S-4L	NI-780S-4L
A2T21H360-23NR6	NXP	RF MOSFET LDMOS 28V OM1230-42 Transistor Type: LDMOS Frequency: 2.11GHz ~ 2.2GHz Gain: 16.8dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 500 mA Power - Output: 373W Voltage - Rated: 65 V Package / Case: OM-1230-4L2L Supplier Device Package: OM-1230-4L2L	封裝: -	Request a Quote	2.11GHz ~ 2.2GHz	16.8dB	28 V	10µA	-	500 mA	373W	65 V	OM-1230-4L2L	OM-1230-4L2L
A2T21S260W12NR3	NXP	RF MOSFET LDMOS 28V OM880X-2L2L Transistor Type: LDMOS Frequency: 2.11GHz ~ 2.2GHz Gain: 17.9dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 1.6 A Power - Output: 218W Voltage - Rated: 65 V Package / Case: OM-880X-2L2L Supplier Device Package: OM-880X-2L2L	封裝: -	Request a Quote	2.11GHz ~ 2.2GHz	17.9dB	28 V	10µA	-	1.6 A	218W	65 V	OM-880X-2L2L	OM-880X-2L2L
A2T14H450-23NR6	NXP	RF MOSFET LDMOS 31V OM1230-42 Transistor Type: LDMOS Frequency: 1.452GHz ~ 1.511GHz Gain: 18.8dB Voltage - Test: 31 V Current Rating: 10µA Noise Figure: - Current - Test: 1 A Power - Output: - Voltage - Rated: 65 V Package / Case: OM-1230-4L2S Supplier Device Package: OM-1230-4L2S	封裝: -	Request a Quote	1.452GHz ~ 1.511GHz	18.8dB	31 V	10µA	-	1 A	-	65 V	OM-1230-4L2S	OM-1230-4L2S
AFM907NT1	NXP	RF MOSFET LDMOS 10.8V 16DFN Transistor Type: LDMOS Frequency: 136MHz ~ 941MHz Gain: - Voltage - Test: 10.8 V Current Rating: 10µA Noise Figure: - Current - Test: 100 mA Power - Output: 8.4W Voltage - Rated: 30 V Package / Case: 16-VDFN Exposed Pad Supplier Device Package: 16-DFN (4x6)	封裝: -	Request a Quote	136MHz ~ 941MHz	-	10.8 V	10µA	-	100 mA	8.4W	30 V	16-VDFN Exposed Pad	16-DFN (4x6)
MRF101AN	NXP	RF MOSFET LDMOS 50V TO220-3 Transistor Type: LDMOS Frequency: 1.8MHz ~ 250MHz Gain: 21.1dB Voltage - Test: 50 V Current Rating: 10µA Noise Figure: - Current - Test: 100 mA Power - Output: 115W Voltage - Rated: 133 V Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封裝: -	Request a Quote	1.8MHz ~ 250MHz	21.1dB	50 V	10µA	-	100 mA	115W	133 V	TO-220-3	TO-220-3
MRF101BN	NXP	RF MOSFET LDMOS 50V TO220-3 Transistor Type: LDMOS Frequency: 1.8MHz ~ 250MHz Gain: 21.1dB Voltage - Test: 50 V Current Rating: 10µA Noise Figure: - Current - Test: 100 mA Power - Output: 115W Voltage - Rated: 133 V Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封裝: -	庫存510	1.8MHz ~ 250MHz	21.1dB	50 V	10µA	-	100 mA	115W	133 V	TO-220-3	TO-220-3
A5G38H045NT4	NXP	RF MOSFET DFN Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
MRF7S24250N-3STG	NXP	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
A3T19H455W23SR6	NXP	RF MOSFET LDMOS 30V ACP1230S-4 Transistor Type: LDMOS Frequency: 1.93GHz ~ 1.99GHz Gain: 16.4dB Voltage - Test: 30 V Current Rating: 10µA Noise Figure: - Current - Test: 540 mA Power - Output: 81W Voltage - Rated: 65 V Package / Case: ACP-1230S-4L2S Supplier Device Package: ACP-1230S-4L2S	封裝: -	Request a Quote	1.93GHz ~ 1.99GHz	16.4dB	30 V	10µA	-	540 mA	81W	65 V	ACP-1230S-4L2S	ACP-1230S-4L2S
A3G23H500W17SR3	NXP	RF MOSFET GAN 48V NI780 Transistor Type: GaN Frequency: 2.3GHz ~ 2.4GHz Gain: 14.3dB Voltage - Test: 48 V Current Rating: - Noise Figure: - Current - Test: 300 mA Power - Output: 80W Voltage - Rated: 125 V Package / Case: NI-780-4S2S Supplier Device Package: NI-780-4S2S	封裝: -	Request a Quote	2.3GHz ~ 2.4GHz	14.3dB	48 V	-	-	300 mA	80W	125 V	NI-780-4S2S	NI-780-4S2S
A3G26D055N-1805	NXP	RF MOSFET GAN 48V 6DFN Transistor Type: GaN Frequency: 100MHz ~ 2.69GHz Gain: 13.9dB Voltage - Test: 48 V Current Rating: - Noise Figure: - Current - Test: 40 mA Power - Output: 8W Voltage - Rated: 125 V Package / Case: 6-LDFN Exposed Pad Supplier Device Package: 6-PDFN (7x6.5)	封裝: -	庫存9	100MHz ~ 2.69GHz	13.9dB	48 V	-	-	40 mA	8W	125 V	6-LDFN Exposed Pad	6-PDFN (7x6.5)