Nexperia USA Inc. 產品

PH7630DLX

Nexperia USA Inc.

MOSFET N-CH 30V LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: -

封裝: -

BUK7535-55A,127

Nexperia USA Inc.

MOSFET N-CH 55V 35A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 872pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 85W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封裝: TO-220-3

BUK7620-100A,118

Nexperia USA Inc.

MOSFET N-CH 100V 63A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 4373pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PMN40ENEX

Nexperia USA Inc.

PMN40ENE/SC-74/REEL 7" Q1/T1 *

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
• Rds On (Max) @ Id, Vgs: 38 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

封裝: SC-74, SOT-457

PBSS4130QAZ

Nexperia USA Inc.

TRANS NPN 30V 1A DFN1010D-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 235mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 190MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3

封裝: 3-XDFN Exposed Pad

2PA1576Q,135

Nexperia USA Inc.

TRANS PNP 50V 0.15A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

PDTB114EQAZ

Nexperia USA Inc.

TRANS PREBIAS PNP 3DFN

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 150MHz
• Power - Max: 325mW
• Mounting Type: Surface Mount
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3

封裝: 3-XDFN Exposed Pad

PUMZ1,115

Nexperia USA Inc.

TRANS NPN/PNP 40V 0.1A 6TSSOP

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP, SC-88

封裝: 6-TSSOP, SC-88, SOT-363

PZU24B1A,115

Nexperia USA Inc.

DIODE ZENER 24V 320MW SOD323

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±2%
• Power - Max: 320mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 19V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: SC-76, SOD-323

BZX384-C2V4,115

Nexperia USA Inc.

DIODE ZENER 2.4V 300MW SOD323

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: SC-76, SOD-323

BZX79-C62,143

Nexperia USA Inc.

DIODE ZENER 62V 400MW ALF2

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±5%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 215 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 43.4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

封裝: DO-204AH, DO-35, Axial

74HC299DB,118

Nexperia USA Inc.

IC UNIV SHIFT REGISTER 20SSOP

• Logic Type: Universal Shift Register
• Number of Circuits: 8-Bit
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 20-SSOP

封裝: 20-SSOP (0.209", 5.30mm Width)

74LVC1G19GN,132

Nexperia USA Inc.

IC DECODER/DEMUX 1-OF-2 6XSON

• Type: Decoder/Demultiplexer
• Circuit: 1 x 1:2
• Independent Circuits: 1
• Current - Output High, Low: 32mA, 32mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT1115 (0.9x1)

封裝: 6-XFDFN

74AXP1G10GNH

Nexperia USA Inc.

IC GATE NAND 3-INPUT LP X2SON6

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 0.7 V ~ 2.75 V
• Current - Quiescent (Max): 0.6µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3.2ns @ 2.5V, 5pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-XSON, SOT1115 (0.9x1)
• Package / Case: 6-XFDFN

封裝: 6-XFDFN

74LV08D,112

Nexperia USA Inc.

IC GATE AND 4CH 2-INP 14-SO

• Logic Type: AND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1 V ~ 5.5 V
• Current - Quiescent (Max): 40µA
• Current - Output High, Low: 12mA, 12mA
• Logic Level - Low: 0.3 V ~ 0.8 V
• Logic Level - High: 0.9 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 9ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

封裝: 14-SOIC (0.154", 3.90mm Width)

74AHC273PW,118

Nexperia USA Inc.

IC D-TYPE POS TRG SNGL 20TSSOP

• Function: Master Reset
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 110MHz
• Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)

封裝: 20-TSSOP (0.173", 4.40mm Width)

74AHCT1G126GF,132

Nexperia USA Inc.

IC BUFFER/LINEDVR 3ST XSON6

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON (1x1)

封裝: 6-XFDFN

74LVC1G66GN,132

Nexperia USA Inc.

IC SWITCH SPST 6XSON

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 10 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 4.2ns, 5ns
• -3db Bandwidth: 500MHz
• Charge Injection: 7.5pC
• Channel Capacitance (CS(off), CD(off)): 6.5pF
• Current - Leakage (IS(off)) (Max): 5µA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT1115 (0.9x1)

封裝: 6-XFDFN

74HCT123D-Q100J

Nexperia USA Inc.

74HCT123D-Q100/SOT109/SO16

• Logic Type: Monostable
• Independent Circuits: 2
• Schmitt Trigger Input: Yes
• Propagation Delay: 65ns
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 4.5V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

封裝: 16-SOIC (0.154", 3.90mm Width)

BZX84W-B56X

Nexperia USA Inc.

DIODE ZENER 56V 275MW SOT323

• Voltage - Zener (Nom) (Vz): 56 V
• Tolerance: ±2%
• Power - Max: 275 mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封裝: -

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NHUMH11X

Nexperia USA Inc.

TRANS PREBIAS 2NPN 80V 6TSSOP

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 10kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 170MHz
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

封裝: -

BZX84W-B4V3X

Nexperia USA Inc.

DIODE ZENER 4.3V 275MW SOT323

• Voltage - Zener (Nom) (Vz): 4.3 V
• Tolerance: ±2%
• Power - Max: 275 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封裝: -

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BC817-16-QR

Nexperia USA Inc.

TRANS NPN 45V 0.5A TO236AB

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

封裝: -

BZX84-C24-DG-B4R

Nexperia USA Inc.

DIODE ZENER 24.2V 250MW TO236AB

• Voltage - Zener (Nom) (Vz): 24.2 V
• Tolerance: ±5%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

封裝: -

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PMEG030V030EPEZ

Nexperia USA Inc.

DIODE SCHOTTKY 30V 3A CFP15B

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 16 ns
• Current - Reverse Leakage @ Vr: 150 µA @ 30 V
• Capacitance @ Vr, F: 470pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

封裝: -

HEF4046BT-Q100J

Nexperia USA Inc.

HEF4046BT-Q100/SOT109/SO16

• Type: Phase Lock Loop (PLL)
• PLL: Yes
• Input: -
• Output: -
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: No/No
• Frequency - Max: 2.7MHz
• Divider/Multiplier: No/No
• Voltage - Supply: 3V ~ 15V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

封裝: -

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PMPB12EPX

Nexperia USA Inc.

MOSFET P-CH 30V 7.9A DFN2020MD-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 13W (Tc)
• Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020MD-6
• Package / Case: 6-UDFN Exposed Pad

封裝: -

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BZX884S-C8V2YL

Nexperia USA Inc.

BZX884S-C8V2/SOD882BD/XSON2

• Voltage - Zener (Nom) (Vz): 8.2 V
• Tolerance: ±6.1%
• Power - Max: 365 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 700 nA @ 5 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2

封裝: -

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