Nexperia USA Inc. 產品

BC847A,215

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封裝: TO-236-3, SC-59, SOT-23-3

PDTA115EU,115

Nexperia USA Inc.

TRANS PREBIAS PNP 200MW SOT323

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 20mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): 100k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: -
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

PUMD13,115

Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: -
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

BZV55-B11,135

Nexperia USA Inc.

DIODE ZENER 11V 500MW SOD80C

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80C

封裝: DO-213AC, MINI-MELF, SOD-80

BZT52-C9V1J

Nexperia USA Inc.

DIODE ZENER 9.05V 350MW SOD123

• Voltage - Zener (Nom) (Vz): 9.05V
• Tolerance: ±6.1%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 6V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封裝: SOD-123

PMEG060V050EPDAZ

Nexperia USA Inc.

DIODE SCHOTTKY 60V 5A CFP15

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 560mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 12ns
• Current - Reverse Leakage @ Vr: 400µA @ 60V
• Capacitance @ Vr, F: 175pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, Flat Leads
• Supplier Device Package: CFP15
• Operating Temperature - Junction: 175°C (Max)

封裝: 3-SMD, Flat Leads

PMEG4002ELD,315

Nexperia USA Inc.

DIODE SCHOTTKY 40V 200MA SOD882D

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 10µA @ 40V
• Capacitance @ Vr, F: 20pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-XDFN
• Supplier Device Package: 2-DFN1006D (0.6x1.0)
• Operating Temperature - Junction: 150°C (Max)

封裝: 2-XDFN

PMEG4030EP,115

Nexperia USA Inc.

DIODE SCHOTTKY 40V 3A SOD128

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 40V
• Capacitance @ Vr, F: 350pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: CFP5
• Operating Temperature - Junction: 150°C (Max)

封裝: SOD-128

74LVC4245ADB,112

Nexperia USA Inc.

IC TRANSCVR TRI-ST DL 24SSOP

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 1
• Channels per Circuit: 8
• Voltage - VCCA: 1.5V ~ 5.5V
• Voltage - VCCB: 1.5V ~ 3.6V
• Input Signal: -
• Output Signal: -
• Output Type: Tri-State, Non-Inverted
• Data Rate: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 24-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 24-SSOP

封裝: 24-SSOP (0.209", 5.30mm Width)

74LVC2G38GS,115

Nexperia USA Inc.

IC GATE NAND 2CH 2-INP 8-XSON

• Logic Type: NAND Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: Open Drain
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: -, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 3.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-XSON, SOT1203 (1.35x1)
• Package / Case: 8-XFDFN

封裝: 8-XFDFN

74HC1G86GW-Q100H

Nexperia USA Inc.

IC GATE XOR 1CH 2-INP 5-TSSOP

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 20µA
• Current - Output High, Low: 2.6mA, 2.6mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-TSSOP
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

封裝: 5-TSSOP, SC-70-5, SOT-353

74LVC1G57GM,132

Nexperia USA Inc.

IC CONFIG MULTI-FUNC GATE 6XSON

• Logic Type: Configurable Multiple Function
• Number of Circuits: 1
• Number of Inputs: 3
• Schmitt Trigger Input: Yes
• Output Type: Single-Ended
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT886 (1.45x1)

封裝: 6-XFDFN

74LVC16374ABX,518

Nexperia USA Inc.

IC D-TYPE POS TRG DUAL 60HXQFN

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 2
• Number of Bits per Element: 8
• Clock Frequency: 300MHz
• Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Iq): 20µA
• Input Capacitance: 5pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-XFQFN Dual Rows, Exposed Pad

封裝: 60-XFQFN Dual Rows, Exposed Pad

74AHC273D-Q100J

Nexperia USA Inc.

IC D-TYPE POS TRG SNGL 20SOIC

• Function: Master Reset
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 110MHz
• Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)

封裝: 20-SOIC (0.295", 7.50mm Width)

74LVC1G126GXH

Nexperia USA Inc.

IC BUS BUFF/LINE DVR 3ST

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-X2SON (0.80x0.80)

封裝: 4-XFDFN Exposed Pad

PESD3V3S1BLYL

Nexperia USA Inc.

PESD3V3S1BL/SOD882/SOD2

• Type: -
• Unidirectional Channels: -
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): -
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: -
• Applications: -
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

PESD5V0X1BT,215

Nexperia USA Inc.

TVS DIODE 5VWM SOT23

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 0.9pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23 (TO-236AB)

封裝: TO-236-3, SC-59, SOT-23-3

BCP53-16-QF

Nexperia USA Inc.

BCP53-16-Q/SOT223/SC-73

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 650 mW
• Frequency - Transition: 145MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封裝: -

BC857C-QVL

Nexperia USA Inc.

TRANS PNP 45V 0.1A TO236AB

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 250 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

封裝: -

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RP510L181H-TR

Nexperia USA Inc.

IC REG 4A

• Function: -
• Output Configuration: -
• Topology: -
• Output Type: -
• Number of Outputs: -
• Voltage - Input (Min): -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: -
• Synchronous Rectifier: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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BZX884S-C9V1YL

Nexperia USA Inc.

BZX884S-C9V1/SOD882BD/XSON2

• Voltage - Zener (Nom) (Vz): 9.05 V
• Tolerance: ±6.08%
• Power - Max: 365 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2

封裝: -

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HPZR-C10-QX

Nexperia USA Inc.

HPZR-C10-Q/SOD123W/SOD2

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±5%
• Power - Max: 682 mW
• Impedance (Max) (Zzt): 18.02 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 8.5 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W

封裝: -

PNE20060EPE-QZ

Nexperia USA Inc.

DIODE GEN PURP 200V 6A CFP15B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

封裝: -

PMH1200UPEH

Nexperia USA Inc.

MOSFET P-CH 30V 520MA DFN0606-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN0606-3
• Package / Case: 3-XFDFN

封裝: -

BUK9M8R5-40HX

Nexperia USA Inc.

MOSFET N-CH 40V 40A LFPAK33

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 59W (Ta)
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

封裝: -

BC54PAS-QX

Nexperia USA Inc.

BC54PAS-Q/SOT1061/HUSON3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 420 mW
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-UDFN Exposed Pad
• Supplier Device Package: DFN2020D-3

封裝: -

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PMEG100T120ELPEZ

Nexperia USA Inc.

DIODE SCHOTTKY 100V 12A CFP15B

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 28 ns
• Current - Reverse Leakage @ Vr: 6 µA @ 100 V
• Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

封裝: -

BC856BQBZ

Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 65 V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 340 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1110D-3

封裝: -