Nexperia USA Inc. 產品

BCV61A,215

Nexperia USA Inc.

TRANS NPN 30V 100MA DUAL SOT143B

• Transistor Type: 2 NPN (Dual) Current Mirror
• Applications: Current Mirror
• Voltage - Rated: 30V
• Current Rating: 100mA
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

封裝: TO-253-4, TO-253AA

BUK953R5-60E,127

Nexperia USA Inc.

MOSFET N-CH 60V 120A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 13490pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 293W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封裝: TO-220-3

BUK6E4R0-75C,127

Nexperia USA Inc.

MOSFET N-CH 75V 120A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 306W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

PSMN1R2-25YL,115

Nexperia USA Inc.

MOSFET N-CH 25V 100A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6380pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 121W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SOT-1023, 4-LFPAK

封裝: SOT-1023, 4-LFPAK

PMBTA42,215

Nexperia USA Inc.

TRANS NPN 300V 0.1A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 50MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封裝: TO-236-3, SC-59, SOT-23-3

BC817-16,235

Nexperia USA Inc.

TRANS NPN 45V 0.5A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封裝: TO-236-3, SC-59, SOT-23-3

PMBS3904,235

Nexperia USA Inc.

TRANS NPN 40V 0.1A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封裝: TO-236-3, SC-59, SOT-23-3

PZU11B2L,315

Nexperia USA Inc.

DIODE ZENER 11V 250MW SOD882

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006-2

封裝: SOD-882

TDZ3V0J,115

Nexperia USA Inc.

DIODE ZENER 3V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封裝: SC-90, SOD-323F

BZX84-C7V5,235

Nexperia USA Inc.

DIODE ZENER 7.5V 250MW SOT23

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封裝: TO-236-3, SC-59, SOT-23-3

74AVCH4T245GU,115

Nexperia USA Inc.

TXRX 4BIT TRANSLATING 16XQFN

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 2
• Channels per Circuit: 2
• Voltage - VCCA: 0.8V ~ 3.6V
• Voltage - VCCB: 0.8V ~ 3.6V
• Input Signal: -
• Output Signal: -
• Output Type: Tri-State, Non-Inverted
• Data Rate: 380Mbps
• Operating Temperature: -40°C ~ 125°C (TA)
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 16-XFQFN
• Supplier Device Package: 16-XQFN (1.8x2.6)

封裝: 16-XFQFN

74AUP1G19GN,132

Nexperia USA Inc.

IC DECODER/DEMUX 1-OF-2 6XSON

• Type: Decoder/Demultiplexer
• Circuit: 1 x 1:2
• Independent Circuits: 1
• Current - Output High, Low: 4mA, 4mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT1115 (0.9x1)

封裝: 6-XFDFN

74AHCT257D-Q100J

Nexperia USA Inc.

IC MUX QUAD 2-INPUT 16SOIC

• Type: Multiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

封裝: 16-SOIC (0.154", 3.90mm Width)

74HC573DB-Q100J

Nexperia USA Inc.

IC LATCH TRANSP OCT D 3ST 20SSOP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 2 V ~ 6 V
• Independent Circuits: 1
• Delay Time - Propagation: 14ns
• Current - Output High, Low: 7.8mA, 7.8mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 20-SSOP

封裝: 20-SSOP (0.209", 5.30mm Width)

74LVC2G86DP-Q100H

Nexperia USA Inc.

IC GATE XOR 2CH 2-INP 8-TSSOP

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

74HC03PW-Q100J

Nexperia USA Inc.

IC GATE NAND 4CH 2-INP 14-TSSOP

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: Open Drain
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: -, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封裝: 14-TSSOP (0.173", 4.40mm Width)

74AHC132D,118

Nexperia USA Inc.

IC GATE NAND 4CH 2-INP 14-SO

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.9 V ~ 1.65 V
• Logic Level - High: 2.2 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

封裝: 14-SOIC (0.154", 3.90mm Width)

PDI1284P11DL,112

Nexperia USA Inc.

IC TXRX/BUFFER PARALLEL 48-SSOP

• Applications: Parallel Interface Transceiver/Buffer
• Interface: Parallel
• Voltage - Supply: 3 V ~ 5.5 V
• Package / Case: 48-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: 48-SSOP
• Mounting Type: Surface Mount

封裝: 48-BSSOP (0.295", 7.50mm Width)

74HCT1G66GW-Q100H

Nexperia USA Inc.

IC ANLG SWITCH SPST 5TSSOP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 95 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 30ns, 44ns
• -3db Bandwidth: 200MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 1.5pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: 5-TSSOP

封裝: 5-TSSOP, SC-70-5, SOT-353

PESD24VS2UAT/ZLR

Nexperia USA Inc.

DIODE PROTECTION TO-236AB

• Type: -
• Unidirectional Channels: -
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): -
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: -
• Applications: -
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

BZA856A,115

Nexperia USA Inc.

TVS DIODE 5.6VWM SOT353

• Type: Zener
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.6V
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 24W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 240pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SOT-353

封裝: 5-TSSOP, SC-70-5, SOT-353

NHDTA114YTR

Nexperia USA Inc.

TRANS PREBIAS PNP 80V TO236AB

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 150 MHz
• Power - Max: 250 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

封裝: -

BC846AQBZ

Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 65 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 340 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1110D-3

封裝: -

BAT74S-S500X

Nexperia USA Inc.

DIODE ARRAY SCHOTTKY 30V SOT143B

• Diode Configuration: -
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Operating Temperature - Junction: 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

封裝: -

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NHDTA143ZUX

Nexperia USA Inc.

TRANS PREBIAS PNP 80V SOT323

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 150 MHz
• Power - Max: 235 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封裝: -

BZX38450-C3V9F

Nexperia USA Inc.

BZX38450-C3V9/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 3.9 V
• Tolerance: ±5%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 2 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封裝: -

BC806-16VL

Nexperia USA Inc.

TRANS PNP 80V 0.5A TO236AB

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 500 mW
• Frequency - Transition: 155MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

封裝: -

PSMP012-30YEX

Nexperia USA Inc.

PSMP012-30YE/SOT669/LFPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 67.3A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封裝: -

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