Microsemi Corporation 產品

APT20GF120BRDQ1G

Microsemi Corporation

IGBT 1200V 36A 200W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 36A
• Current - Collector Pulsed (Icm): 64A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
• Power - Max: 200W
• Switching Energy: 895µJ (on), 840µJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 10ns/120ns
• Test Condition: 800V, 15A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封裝: TO-247-3

APTGL60TL120T3G

Microsemi Corporation

POWER MODULE IGBT 1200V 60A SP3

• IGBT Type: Trench Field Stop
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Power - Max: 280W
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 2.77nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封裝: SP3

APT53N60SC6

Microsemi Corporation

MOSFET N-CH 600V 53A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
• Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 417W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

1N824

Microsemi Corporation

DIODE ZENER 6.2V 500MW DO7

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

封裝: DO-204AA, DO-7, Axial

1N4913

Microsemi Corporation

DIODE ZENER 12.8V 400MW DO7

• Voltage - Zener (Nom) (Vz): 12.8V
• Tolerance: ±5%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -25°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

封裝: DO-204AA, DO-7, Axial

JAN1N4130DUR-1

Microsemi Corporation

DIODE ZENER 68V DO213AA

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±1%
• Power - Max: -
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 51.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封裝: DO-213AA

JANTX1N5543BUR-1

Microsemi Corporation

DIODE ZENER 25V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 25V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 22.4V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封裝: DO-213AA (Glass)

1N6636

Microsemi Corporation

DIODE ZENER 4.7V 5W AXIAL

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E, Axial

封裝: E, Axial

CDLL965

Microsemi Corporation

DIODE ZENER 15V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±20%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 16 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封裝: DO-213AB, MELF

1N5360BE3/TR12

Microsemi Corporation

DIODE ZENER 25V 5W T18

• Voltage - Zener (Nom) (Vz): 25V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

1PMT5929B/TR13

Microsemi Corporation

DIODE ZENER 15V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

封裝: DO-216AA

3EZ22D2E3/TR12

Microsemi Corporation

DIODE ZENER 22V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N5938PE3/TR8

Microsemi Corporation

DIODE ZENER 36V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 38 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 27.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

A10V10B-VQ80C

Microsemi Corporation

IC FPGA 57 I/O 80VQFP

• Number of LABs/CLBs: 295
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 57
• Number of Gates: 1200
• Voltage - Supply: 2.7 V ~ 3.6 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 80-TQFP
• Supplier Device Package: 80-VQFP (14x14)

封裝: 80-TQFP

AX250-1FGG484M

Microsemi Corporation

IC FPGA 248 I/O 484FBGA

• Number of LABs/CLBs: 4224
• Number of Logic Elements/Cells: -
• Total RAM Bits: 55296
• Number of I/O: 248
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

A42MX16-1TQG176M

Microsemi Corporation

IC FPGA 140 I/O 176TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 140
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 176-LQFP
• Supplier Device Package: 176-TQFP (24x24)

封裝: 176-LQFP

MPF500T-FCG784I

Microsemi Corporation

IC FPGA 388 I/O

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 481000
• Total RAM Bits: 33792000
• Number of I/O: 388
• Number of Gates: -
• Voltage - Supply: 0.97 V ~ 1.08 V
• Mounting Type: -
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: -
• Supplier Device Package: -

封裝: -

A3PE3000-1FG484I

Microsemi Corporation

IC FPGA 341 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 516096
• Number of I/O: 341
• Number of Gates: 3000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封裝: 484-BGA

A42MX16-1VQG100I

Microsemi Corporation

IC FPGA 83 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 83
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

封裝: 100-TQFP

AGL250V5-CS196

Microsemi Corporation

IC FPGA 143 I/O 196CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 6144
• Total RAM Bits: 36864
• Number of I/O: 143
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 196-TFBGA, CSBGA
• Supplier Device Package: 196-CSP (8x8)

封裝: 196-TFBGA, CSBGA

A3P250-FGG256

Microsemi Corporation

IC FPGA 157 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 157
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

封裝: 256-LBGA

JANTX1N6152

Microsemi Corporation

TVS DIODE 20.6VWM 39.27VC CPKG

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 20.6V
• Voltage - Breakdown (Min): 24.42V
• Voltage - Clamping (Max) @ Ipp: 39.27V
• Current - Peak Pulse (10/1000µs): 38.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: C, Axial

封裝: Axial

MA5KP12CA

Microsemi Corporation

TVS DIODE 12VWM 19.9VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 251A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

封裝: DO-204AR, Axial

MAPLAD30KP64CA

Microsemi Corporation

TVS DIODE 64VWM 103VC SMD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 294A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MAPLAD30KP28CAE3

Microsemi Corporation

TVS DIODE 28VWM 46.4VC SMD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 46.4V
• Current - Peak Pulse (10/1000µs): 645A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MXLP6KE22A

Microsemi Corporation

TVS DIODE 18.8VWM 30.6VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 20A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

MASMLG45CAE3

Microsemi Corporation

TVS DIODE 45VWM 72.7VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50V
• Voltage - Clamping (Max) @ Ipp: 72.7V
• Current - Peak Pulse (10/1000µs): 41.2A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

封裝: DO-215AB, SMC Gull Wing

MASMCJ130A

Microsemi Corporation

TVS DIODE 130VWM 209VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 209V
• Current - Peak Pulse (10/1000µs): 7.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封裝: DO-214AB, SMC