Microsemi Corporation 產品

APT50GP60J

Microsemi Corporation

IGBT 600V 100A 329W SOT227

• IGBT Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Power - Max: 329W
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector Cutoff (Max): 500µA
• Input Capacitance (Cies) @ Vce: 5.7nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: ISOTOP?

封裝: SOT-227-4, miniBLOC

APTM100H18FG

Microsemi Corporation

MOSFET 4N-CH 1000V 43A SP6

• FET Type: 4 N-Channel (H-Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C: 43A
• Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
• Power - Max: 780W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

封裝: SP6

JANTX2N2605

Microsemi Corporation

TRANS PNP 60V 0.03A

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AB, TO-46-3 Metal Can
• Supplier Device Package: TO-46 (TO-206AB)

封裝: TO-206AB, TO-46-3 Metal Can

UTV005

Microsemi Corporation

TRANS RF BIPO 8W 750MA 55FT-4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 24V
• Frequency - Transition: 470MHz ~ 860MHz
• Noise Figure (dB Typ @ f): -
• Gain: 11dB
• Power - Max: 8W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
• Current - Collector (Ic) (Max): 750mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis, Stud Mount
• Package / Case: 55FT
• Supplier Device Package: 55FT

封裝: 55FT

1N5954A G

Microsemi Corporation

DIODE ZENER 160V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±10%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N5939C G

Microsemi Corporation

DIODE ZENER 39V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±2%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N3043B-1

Microsemi Corporation

DIODE ZENER 91V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N4731CP/TR8

Microsemi Corporation

DIODE ZENER 4.3V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

1N5382E3/TR13

Microsemi Corporation

DIODE ZENER 140V 5W T18

• Voltage - Zener (Nom) (Vz): 140V
• Tolerance: ±20%
• Power - Max: 5W
• Impedance (Max) (Zzt): 230 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 101V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

JAN1N4127CUR-1

Microsemi Corporation

DIODE ZENER 56V DO213AA

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±2%
• Power - Max: -
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封裝: DO-213AA

JANTXV1N980C-1

Microsemi Corporation

DIODE ZENER 62V 500MW DO35

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 185 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 47V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封裝: DO-204AH, DO-35, Axial

1N4735CE3/TR13

Microsemi Corporation

DIODE ZENER 6.2V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

JANTX1N4488

Microsemi Corporation

DIODE ZENER 91V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 250nA @ 72.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封裝: DO-204AL, DO-41, Axial

JAN1N4148UB2R

Microsemi Corporation

DIODE GEN PURP 75V 200MA SMD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 500nA @ 75V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: UB2R
• Operating Temperature - Junction: -65°C ~ 200°C

封裝: 2-SMD, No Lead

1N485A

Microsemi Corporation

DIODE GEN PURP 180V 100MA DO7

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 180V
• Current - Average Rectified (Io): 100mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25nA @ 180V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AA, DO-7, Axial

SG1845Y

Microsemi Corporation

IC REG CTRLR FLYBACK 8DIP

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive, Isolation Capable
• Topology: Flyback
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 7.6 V ~ 30 V
• Frequency - Switching: 1Hz ~ 500kHz
• Duty Cycle (Max): 48%
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 8-CDIP (0.300", 7.62mm)
• Supplier Device Package: 8-CERDIP

封裝: 8-CDIP (0.300", 7.62mm)

A3PE3000-2FGG324I

Microsemi Corporation

IC FPGA 221 I/O 324FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 516096
• Number of I/O: 221
• Number of Gates: 3000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 324-BGA
• Supplier Device Package: 324-FBGA (19x19)

封裝: 324-BGA

A42MX16-3PQ100

Microsemi Corporation

IC FPGA 83 I/O 100QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 83
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 100-BQFP
• Supplier Device Package: 100-PQFP (14x20)

封裝: 100-BQFP

AGL600V2-FGG144

Microsemi Corporation

IC FPGA 97 I/O 144FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 13824
• Total RAM Bits: 110592
• Number of I/O: 97
• Number of Gates: 600000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

封裝: 144-LBGA

MP6KE18AE3

Microsemi Corporation

TVS DIODE 15.3VWM 25.2VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15.3V
• Voltage - Breakdown (Min): 17.1V
• Voltage - Clamping (Max) @ Ipp: 25.2V
• Current - Peak Pulse (10/1000µs): 24A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

MPLAD36KP45CAE3

Microsemi Corporation

TVS DIODE 72.7VC 496A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50V
• Voltage - Clamping (Max) @ Ipp: 72.7V
• Current - Peak Pulse (10/1000µs): 496A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MXLCE11AE3

Microsemi Corporation

TVS DIODE 11VWM 18.2VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 82A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封裝: DO-201AA, DO-27, Axial

MPLAD15KP51A

Microsemi Corporation

TVS DIODE 51VWM 82.4VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 183A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封裝: Nonstandard SMD

MXLP6KE75CA

Microsemi Corporation

TVS DIODE 64.1VWM 103VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 64.1V
• Voltage - Breakdown (Min): 71.3V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 5.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封裝: T-18, Axial

MXLSMBJ43AE3

Microsemi Corporation

TVS DIODE 43VWM 69.4VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 8.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封裝: DO-214AA, SMB

MASMLJ70A

Microsemi Corporation

TVS DIODE 70VWM 113VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 26.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封裝: DO-214AB, SMC

MSMCG7.5AE3

Microsemi Corporation

TVS DIODE 7.5VWM 12.9VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 116.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

封裝: DO-215AB, SMC Gull Wing

LX3301AQPW

Microsemi Corporation

IC, INDUCTIVE SENSOR

• Applications: -
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -