頁 58 - Microsemi Corporation 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N6625U	Microsemi Corporation	DIODE GEN PURP 1KV 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存5,040	1000V	1A	1.75V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 1000V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6625	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	封裝: A, Axial	庫存2,000	1000V	1A	1.75V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 150°C
JANTXV1N6624U	Microsemi Corporation	DIODE GEN PURP 900V 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 500nA @ 900V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存2,784	900V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 900V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6624U	Microsemi Corporation	DIODE GEN PURP 900V 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 500nA @ 900V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存6,448	900V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 900V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6624U	Microsemi Corporation	DIODE GEN PURP 900V 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 900V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存6,576	900V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 900V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6624	Microsemi Corporation	DIODE GEN PURP 900V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 900V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	封裝: A, Axial	庫存2,960	900V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 900V	-	Through Hole	A, Axial	-	-65°C ~ 150°C
JANTXV1N6623U	Microsemi Corporation	DIODE GEN PURP 800V 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存6,432	800V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6623U	Microsemi Corporation	DIODE GEN PURP 800V 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存3,536	800V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6623U	Microsemi Corporation	DIODE GEN PURP 800V 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存4,864	800V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6623	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 150°C	封裝: A, Axial	庫存3,536	800V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 800V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 150°C
JAN1N6622US	Microsemi Corporation	DIODE GEN PURP 660V 2A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 660V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存6,128	660V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 660V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6622U	Microsemi Corporation	DIODE GEN PURP 600V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存6,608	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6622U	Microsemi Corporation	DIODE GEN PURP 600V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存3,216	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6622U	Microsemi Corporation	DIODE GEN PURP 600V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存6,096	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6621U	Microsemi Corporation	DIODE GEN PURP 400V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存5,712	400V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6621U	Microsemi Corporation	DIODE GEN PURP 400V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存4,240	400V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6621U	Microsemi Corporation	DIODE GEN PURP 400V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存3,696	400V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6620U	Microsemi Corporation	DIODE GEN PURP 200V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存2,100	200V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTX1N6620U	Microsemi Corporation	DIODE GEN PURP 200V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存4,352	200V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JAN1N6620U	Microsemi Corporation	DIODE GEN PURP 200V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封裝: SQ-MELF, A	庫存7,744	200V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
JANTXV1N6081	Microsemi Corporation	DIODE GEN PURP 150V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: G, Axial Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C	封裝: G, Axial	庫存4,048	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 150V	-	Through Hole	G, Axial	G, Axial	-65°C ~ 155°C
JANTX1N6081	Microsemi Corporation	DIODE GEN PURP 150V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C	封裝: A, Axial	庫存3,152	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 155°C
JANTXV1N5554US	Microsemi Corporation	DIODE GEN PURP 1KV 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	封裝: SQ-MELF, B	庫存4,192	1000V	3A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5552US	Microsemi Corporation	DIODE GEN PURP 600V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	封裝: SQ-MELF, B	庫存4,416	600V	3A	1.2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5550US	Microsemi Corporation	DIODE GEN PURP 200V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	封裝: SQ-MELF, B	庫存3,280	200V	3A	1.2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTXV1N5187	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封裝: B, Axial	庫存3,888	100V	3A	1.5V @ 9A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 100V	-	Through Hole	B, Axial	Axial	-65°C ~ 175°C
JANTX1N4459R	Microsemi Corporation	DIODE GEN PURP 1KV 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-203AA, DO-4, Stud	庫存7,744	1000V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
JAN1N4459R	Microsemi Corporation	DIODE GEN PURP 1KV 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-203AA, DO-4, Stud	庫存5,312	1000V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C

JAN1N6625U

Microsemi Corporation

DIODE GEN PURP 1KV 1A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存5,040

1000V

1A

1.75V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 1000V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6625

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

封裝: A, Axial

庫存2,000

1000V

1A

1.75V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 1000V

-

Through Hole

A, Axial

-

-65°C ~ 150°C

JANTXV1N6624U

Microsemi Corporation

DIODE GEN PURP 900V 1A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 900V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存2,784

900V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

500nA @ 900V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTX1N6624U

Microsemi Corporation

DIODE GEN PURP 900V 1A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 900V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存6,448

900V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

500nA @ 900V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6624U

Microsemi Corporation

DIODE GEN PURP 900V 1A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 900V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存6,576

900V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 900V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6624

Microsemi Corporation

DIODE GEN PURP 900V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 900V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

封裝: A, Axial

庫存2,960

900V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 900V

-

Through Hole

A, Axial

-

-65°C ~ 150°C

JANTXV1N6623U

Microsemi Corporation

DIODE GEN PURP 800V 1A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存6,432

800V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

500nA @ 800V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTX1N6623U

Microsemi Corporation

DIODE GEN PURP 800V 1A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存3,536

800V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

500nA @ 800V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6623U

Microsemi Corporation

DIODE GEN PURP 800V 1A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存4,864

800V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 800V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6623

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C

封裝: A, Axial

庫存3,536

800V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 800V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 150°C

JAN1N6622US

Microsemi Corporation

DIODE GEN PURP 660V 2A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 660V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存6,128

660V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 660V

10pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTXV1N6622U

Microsemi Corporation

DIODE GEN PURP 600V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存6,608

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTX1N6622U

Microsemi Corporation

DIODE GEN PURP 600V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存3,216

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6622U

Microsemi Corporation

DIODE GEN PURP 600V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存6,096

600V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTXV1N6621U

Microsemi Corporation

DIODE GEN PURP 400V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存5,712

400V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTX1N6621U

Microsemi Corporation

DIODE GEN PURP 400V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存4,240

400V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6621U

Microsemi Corporation

DIODE GEN PURP 400V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存3,696

400V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTXV1N6620U

Microsemi Corporation

DIODE GEN PURP 200V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存2,100

200V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 200V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTX1N6620U

Microsemi Corporation

DIODE GEN PURP 200V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存4,352

200V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 200V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JAN1N6620U

Microsemi Corporation

DIODE GEN PURP 200V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, A

庫存7,744

200V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 200V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

JANTXV1N6081

Microsemi Corporation

DIODE GEN PURP 150V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: G, Axial
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C

封裝: G, Axial

庫存4,048

150V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 150V

-

Through Hole

G, Axial

-65°C ~ 155°C

JANTX1N6081

Microsemi Corporation

DIODE GEN PURP 150V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C

封裝: A, Axial

庫存3,152

150V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 150V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 155°C

JANTXV1N5554US

Microsemi Corporation

DIODE GEN PURP 1KV 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

封裝: SQ-MELF, B

庫存4,192

1000V

3A

1.3V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 1000V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

JAN1N5552US

Microsemi Corporation

DIODE GEN PURP 600V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

封裝: SQ-MELF, B

庫存4,416

600V

3A

1.2V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

1µA @ 600V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

JAN1N5550US

Microsemi Corporation

DIODE GEN PURP 200V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

封裝: SQ-MELF, B

庫存3,280

200V

3A

1.2V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

1µA @ 200V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

JANTXV1N5187

Microsemi Corporation

DIODE GEN PURP 100V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封裝: B, Axial

庫存3,888

100V

3A

1.5V @ 9A

Standard Recovery >500ns, > 200mA (Io)

-

2µA @ 100V

-

Through Hole

B, Axial

Axial

-65°C ~ 175°C

JANTX1N4459R

Microsemi Corporation

DIODE GEN PURP 1KV 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-203AA, DO-4, Stud

庫存7,744

1000V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

JAN1N4459R

Microsemi Corporation

DIODE GEN PURP 1KV 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-203AA, DO-4, Stud

庫存5,312

1000V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C