頁 305 - Micron Technology Inc. 產品 - 記憶體

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT46H16M32LFCM-6 L IT:B	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (10x13)	封裝: 90-VFBGA	庫存7,888	DRAM	SDRAM - Mobile LPDDR	512Mb (16M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (10x13)
MT46H16M32LFCM-5 IT:B TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (10x13)	封裝: 90-VFBGA	庫存3,168	DRAM	SDRAM - Mobile LPDDR	512Mb (16M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (10x13)
MT46H16M32LFCM-5 IT:B	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (10x13)	封裝: 90-VFBGA	庫存3,328	DRAM	SDRAM - Mobile LPDDR	512Mb (16M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (10x13)
MT46H16M32LFCG-6 IT:B TR	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 152VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 152-VFBGA Supplier Device Package: 152-VFBGA (14x14)	封裝: 152-VFBGA	庫存4,672	DRAM	SDRAM - Mobile LPDDR	512Mb (16M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	152-VFBGA	152-VFBGA (14x14)
MT46H16M32LFCG-6 IT:B	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 152VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 152-VFBGA Supplier Device Package: 152-VFBGA (14x14)	封裝: 152-VFBGA	庫存5,184	DRAM	SDRAM - Mobile LPDDR	512Mb (16M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	152-VFBGA	152-VFBGA (14x14)
MT46H16M16LFBF-6 AT:H TR	Micron Technology Inc.	IC SDRAM 256MBIT 167MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封裝: 60-VFBGA	庫存4,000	DRAM	SDRAM - Mobile LPDDR	256Mb (16M x 16)	Parallel	166MHz	12ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT46H16M16LFBF-6 AT:H	Micron Technology Inc.	IC SDRAM 256MBIT 167MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封裝: 60-VFBGA	庫存7,616	DRAM	SDRAM - Mobile LPDDR	256Mb (16M x 16)	Parallel	166MHz	12ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT46H16M16LFBF-5:H TR	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封裝: 60-VFBGA	庫存5,664	DRAM	SDRAM - Mobile LPDDR	256Mb (16M x 16)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT46H16M16LFBF-5:H	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封裝: 60-VFBGA	庫存12,276	DRAM	SDRAM - Mobile LPDDR	256Mb (16M x 16)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT46H16M16LFBF-5 IT:H TR	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封裝: 60-VFBGA	庫存3,520	DRAM	SDRAM - Mobile LPDDR	256Mb (16M x 16)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT46H16M16LFBF-5 IT:H	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封裝: 60-VFBGA	庫存14,892	DRAM	SDRAM - Mobile LPDDR	256Mb (16M x 16)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT29C2G48MAKLCJI-6 IT TR	Micron Technology Inc.	IC FLASH/LPDRAM 3GBIT 168VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: -	封裝: 168-VFBGA	庫存4,224	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)	Parallel	166MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	168-VFBGA	-
MT29F4G16ABCWC:C TR	Micron Technology Inc.	IC FLASH 4GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TSOP Supplier Device Package: 48-TSOP	封裝: 48-TSOP	庫存4,240	FLASH	FLASH - NAND	4Gb (256M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	48-TSOP	48-TSOP
MT29F4G08ABCWC:C TR	Micron Technology Inc.	IC FLASH 4GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TSOP Supplier Device Package: 48-TSOP	封裝: 48-TSOP	庫存5,888	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	48-TSOP	48-TSOP
MT29F4G08AACHC:C TR	Micron Technology Inc.	IC FLASH 4GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA	封裝: 63-VFBGA	庫存5,264	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA
MT29F2G08ABDWP:D TR	Micron Technology Inc.	IC FLASH 2GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存4,720	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F1G16ABCHC-ET:C TR	Micron Technology Inc.	IC FLASH 1GBIT 35NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA	封裝: 63-VFBGA	庫存7,456	FLASH	FLASH - NAND	1Gb (64M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA
MT29F1G16ABCHC:C TR	Micron Technology Inc.	IC FLASH 1GBIT 35NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA	封裝: 63-VFBGA	庫存5,664	FLASH	FLASH - NAND	1Gb (64M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA
MT29F1G08ABCHC-ET:C TR	Micron Technology Inc.	IC FLASH 1GBIT 35NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA	封裝: 63-VFBGA	庫存2,048	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA
MT29F1G08ABCHC:C TR	Micron Technology Inc.	IC FLASH 1GBIT 35NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA	封裝: 63-VFBGA	庫存6,624	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA
MT41J512M8THU-187E:A	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ 82BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: 13.125ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 82-FBGA Supplier Device Package: -	封裝: 82-FBGA	庫存4,304	DRAM	SDRAM - DDR3	4Gb (512M x 8)	Parallel	533MHz	-	13.125ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	82-FBGA	-
MT41J512M8THU-15E:A	Micron Technology Inc.	IC SDRAM 4GBIT 667MHZ 82FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 82-FBGA Supplier Device Package: -	封裝: 82-FBGA	庫存2,832	DRAM	SDRAM - DDR3	4Gb (512M x 8)	Parallel	667MHz	-	13.5ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	82-FBGA	-
MT41J512M4JE-15E:A	Micron Technology Inc.	IC SDRAM 2GBIT 667MHZ 82FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (512M x 4) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 82-FBGA Supplier Device Package: 82-FBGA (12.5x15.5)	封裝: 82-FBGA	庫存7,120	DRAM	SDRAM - DDR3	2Gb (512M x 4)	Parallel	667MHz	-	13.5ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	82-FBGA	82-FBGA (12.5x15.5)
MT41J256M8JE-15E:A	Micron Technology Inc.	IC SDRAM 2GBIT 667MHZ 82FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 82-FBGA Supplier Device Package: 82-FBGA (12.5x15.5)	封裝: 82-FBGA	庫存3,792	DRAM	SDRAM - DDR3	2Gb (256M x 8)	Parallel	667MHz	-	13.5ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	82-FBGA	82-FBGA (12.5x15.5)
MT29F4G16ABCWC:C	Micron Technology Inc.	IC FLASH 4GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TSOP Supplier Device Package: 48-TSOP	封裝: 48-TSOP	庫存6,464	FLASH	FLASH - NAND	4Gb (256M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	48-TSOP	48-TSOP
MT29F4G08ABCWC:C	Micron Technology Inc.	IC FLASH 4GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TSOP Supplier Device Package: 48-TSOP	封裝: 48-TSOP	庫存5,088	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	48-TSOP	48-TSOP
MT29F4G08AACHC:C	Micron Technology Inc.	IC FLASH 4GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA	封裝: 63-VFBGA	庫存6,400	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA
MT29F2G08ABDWP:D	Micron Technology Inc.	IC FLASH 2GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存7,104	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I

MT46H16M32LFCM-6 L IT:B

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (10x13)

封裝: 90-VFBGA

庫存7,888

DRAM

SDRAM - Mobile LPDDR

512Mb (16M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (10x13)

MT46H16M32LFCM-5 IT:B TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (10x13)

封裝: 90-VFBGA

庫存3,168

DRAM

SDRAM - Mobile LPDDR

512Mb (16M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (10x13)

MT46H16M32LFCM-5 IT:B

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (10x13)

封裝: 90-VFBGA

庫存3,328

DRAM

SDRAM - Mobile LPDDR

512Mb (16M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (10x13)

MT46H16M32LFCG-6 IT:B TR

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 152VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 152-VFBGA
Supplier Device Package: 152-VFBGA (14x14)

封裝: 152-VFBGA

庫存4,672

DRAM

SDRAM - Mobile LPDDR

512Mb (16M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

152-VFBGA

152-VFBGA (14x14)

MT46H16M32LFCG-6 IT:B

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 152VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 152-VFBGA
Supplier Device Package: 152-VFBGA (14x14)

封裝: 152-VFBGA

庫存5,184

DRAM

SDRAM - Mobile LPDDR

512Mb (16M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

152-VFBGA

152-VFBGA (14x14)

MT46H16M16LFBF-6 AT:H TR

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封裝: 60-VFBGA

庫存4,000

DRAM

SDRAM - Mobile LPDDR

256Mb (16M x 16)

Parallel

166MHz

12ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

MT46H16M16LFBF-6 AT:H

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封裝: 60-VFBGA

庫存7,616

DRAM

SDRAM - Mobile LPDDR

256Mb (16M x 16)

Parallel

166MHz

12ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

MT46H16M16LFBF-5:H TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封裝: 60-VFBGA

庫存5,664

DRAM

SDRAM - Mobile LPDDR

256Mb (16M x 16)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

MT46H16M16LFBF-5:H

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封裝: 60-VFBGA

庫存12,276

DRAM

SDRAM - Mobile LPDDR

256Mb (16M x 16)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

MT46H16M16LFBF-5 IT:H TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封裝: 60-VFBGA

庫存3,520

DRAM

SDRAM - Mobile LPDDR

256Mb (16M x 16)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

MT46H16M16LFBF-5 IT:H

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封裝: 60-VFBGA

庫存14,892

DRAM

SDRAM - Mobile LPDDR

256Mb (16M x 16)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

MT29C2G48MAKLCJI-6 IT TR

Micron Technology Inc.

IC FLASH/LPDRAM 3GBIT 168VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: -

封裝: 168-VFBGA

庫存4,224

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)

Parallel

166MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

168-VFBGA

-

MT29F4G16ABCWC:C TR

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TSOP
Supplier Device Package: 48-TSOP

封裝: 48-TSOP

庫存4,240

FLASH

FLASH - NAND

4Gb (256M x 16)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

48-TSOP

MT29F4G08ABCWC:C TR

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TSOP
Supplier Device Package: 48-TSOP

封裝: 48-TSOP

庫存5,888

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

48-TSOP

MT29F4G08AACHC:C TR

Micron Technology Inc.

IC FLASH 4GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA

封裝: 63-VFBGA

庫存5,264

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

MT29F2G08ABDWP:D TR

Micron Technology Inc.

IC FLASH 2GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存4,720

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F1G16ABCHC-ET:C TR

Micron Technology Inc.

IC FLASH 1GBIT 35NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA

封裝: 63-VFBGA

庫存7,456

FLASH

FLASH - NAND

1Gb (64M x 16)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

MT29F1G16ABCHC:C TR

Micron Technology Inc.

IC FLASH 1GBIT 35NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA

封裝: 63-VFBGA

庫存5,664

FLASH

FLASH - NAND

1Gb (64M x 16)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

MT29F1G08ABCHC-ET:C TR

Micron Technology Inc.

IC FLASH 1GBIT 35NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA

封裝: 63-VFBGA

庫存2,048

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

MT29F1G08ABCHC:C TR

Micron Technology Inc.

IC FLASH 1GBIT 35NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA

封裝: 63-VFBGA

庫存6,624

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

MT41J512M8THU-187E:A

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ 82BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: 13.125ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 82-FBGA
Supplier Device Package: -

封裝: 82-FBGA

庫存4,304

DRAM

SDRAM - DDR3

4Gb (512M x 8)

Parallel

533MHz

-

13.125ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

82-FBGA

-

MT41J512M8THU-15E:A

Micron Technology Inc.

IC SDRAM 4GBIT 667MHZ 82FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 82-FBGA
Supplier Device Package: -

封裝: 82-FBGA

庫存2,832

DRAM

SDRAM - DDR3

4Gb (512M x 8)

Parallel

667MHz

-

13.5ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

82-FBGA

-

MT41J512M4JE-15E:A

Micron Technology Inc.

IC SDRAM 2GBIT 667MHZ 82FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (512M x 4)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 82-FBGA
Supplier Device Package: 82-FBGA (12.5x15.5)

封裝: 82-FBGA

庫存7,120

DRAM

SDRAM - DDR3

2Gb (512M x 4)

Parallel

667MHz

-

13.5ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

82-FBGA

82-FBGA (12.5x15.5)

MT41J256M8JE-15E:A

Micron Technology Inc.

IC SDRAM 2GBIT 667MHZ 82FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 82-FBGA
Supplier Device Package: 82-FBGA (12.5x15.5)

封裝: 82-FBGA

庫存3,792

DRAM

SDRAM - DDR3

2Gb (256M x 8)

Parallel

667MHz

-

13.5ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

82-FBGA

82-FBGA (12.5x15.5)

MT29F4G16ABCWC:C

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TSOP
Supplier Device Package: 48-TSOP

封裝: 48-TSOP

庫存6,464

FLASH

FLASH - NAND

4Gb (256M x 16)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

48-TSOP

MT29F4G08ABCWC:C

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TSOP
Supplier Device Package: 48-TSOP

封裝: 48-TSOP

庫存5,088

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

48-TSOP

MT29F4G08AACHC:C

Micron Technology Inc.

IC FLASH 4GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA

封裝: 63-VFBGA

庫存6,400

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

MT29F2G08ABDWP:D

Micron Technology Inc.

IC FLASH 2GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存7,104

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I