頁 20 - Maxim Integrated 產品 - 記憶體 | 黑森爾電子
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Maxim Integrated 產品 - 記憶體

記錄 607
頁  20/22
圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot DS2704G+
Maxim Integrated

IC EEPROM 1.25KBIT 6TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1.25Kb (32 Bytes x 5 pages)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
封裝: 6-WDFN Exposed Pad
庫存4,960
EEPROM
EEPROM
1.25Kb (32 Bytes x 5 pages)
1-Wire?
-
-
2µs
2.5 V ~ 5.5 V
-30°C ~ 85°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
DS1250YP-100+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
封裝: 34-PowerCap? Module
庫存2,864
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS2431X+
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6UCSPR

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFBGA, CSPBGA
  • Supplier Device Package: 6-UCSPR (3x3)
封裝: 6-UFBGA, CSPBGA
庫存3,104
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
6-UFBGA, CSPBGA
6-UCSPR (3x3)
DS2433X#T
Maxim Integrated

IC EEPROM 4KBIT 1WIRE 6FCP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XBGA, FCBGA
  • Supplier Device Package: 6-FlipChip (2.82x2.54)
封裝: 6-XBGA, FCBGA
庫存4,576
EEPROM
EEPROM
4Kb (256 x 16)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
6-XBGA, FCBGA
6-FlipChip (2.82x2.54)
DS2433X-S#T
Maxim Integrated

IC EEPROM 4KBIT 6FLIPCHIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XBGA, FCBGA
  • Supplier Device Package: 6-FlipChip (2.82x2.54)
封裝: 6-XBGA, FCBGA
庫存4,112
EEPROM
EEPROM
4Kb (256 x 16)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
6-XBGA, FCBGA
6-FlipChip (2.82x2.54)
DS28CZ04G-4+T
Maxim Integrated

IC EEPROM 4KBIT 400KHZ 12TQFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 12-WQFN Exposed Pad
  • Supplier Device Package: 12-TQFN (4x4)
封裝: 12-WQFN Exposed Pad
庫存7,232
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
-
-
2 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
12-WQFN Exposed Pad
12-TQFN (4x4)
DS2433G+T&R
Maxim Integrated

IC EEPROM 4KBIT 1WIRE 2SFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 2-SFN
  • Supplier Device Package: 2-SFN (6x6)
封裝: 2-SFN
庫存7,072
EEPROM
EEPROM
4Kb (256 x 16)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
2-SFN
2-SFN (6x6)
DS28CZ04G-4+
Maxim Integrated

IC EEPROM 4KBIT 400KHZ 12TQFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 12-WQFN Exposed Pad
  • Supplier Device Package: 12-TQFN (4x4)
封裝: 12-WQFN Exposed Pad
庫存5,232
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
-
-
2 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
12-WQFN Exposed Pad
12-TQFN (4x4)
DS28DG02E-3C+T
Maxim Integrated

IC EEPROM 2KBIT 2MHZ 28TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.2 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
  • Supplier Device Package: 28-TSSOP-EP
封裝: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
庫存2,352
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
-
-
2.2 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.173", 4.40mm Width) Exposed Pad
28-TSSOP-EP
DS28DG02G-3C+T
Maxim Integrated

IC EEPROM 2KBIT 2MHZ 36TQFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.2 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-TQFN (6x6)
封裝: 36-WFQFN Exposed Pad
庫存2,512
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
-
-
2.2 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
36-WFQFN Exposed Pad
36-TQFN (6x6)
hot DS1220Y-100IND+
Maxim Integrated

IC NVSRAM 16KBIT 100NS 24EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 24-EDIP
封裝: 24-DIP Module (0.600", 15.24mm)
庫存16,668
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Kb (2K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
24-DIP Module (0.600", 15.24mm)
24-EDIP
DS1249W-100IND#
Maxim Integrated

IC NVSRAM 2MBIT 100NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
封裝: 32-DIP Module (0.600", 15.24mm)
庫存2,064
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (256K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
DS1258Y-100#
Maxim Integrated

IC NVSRAM 2MBIT 100NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存6,928
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1258AB-70IND#
Maxim Integrated

IC NVSRAM 2MBIT 70NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存6,448
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
hot DS1258AB-100#
Maxim Integrated

IC NVSRAM 2MBIT 100NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存4,720
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1258AB-70#
Maxim Integrated

IC NVSRAM 2MBIT 70NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存5,504
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1258Y-70IND#
Maxim Integrated

IC NVSRAM 2MBIT 70NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存6,768
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1258W-100#
Maxim Integrated

IC NVSRAM 2MBIT 100NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存7,184
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1258W-150#
Maxim Integrated

IC NVSRAM 2MBIT 150NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存3,552
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1258W-100IND#
Maxim Integrated

IC NVSRAM 2MBIT 100NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存3,296
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1258Y-70#
Maxim Integrated

IC NVSRAM 2MBIT 70NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
封裝: 40-DIP Module (0.610", 15.495mm)
庫存2,720
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1265AB-70+
Maxim Integrated

IC NVSRAM 8MBIT 70NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
封裝: 36-DIP Module (0.600", 15.24mm)
庫存5,664
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
DS1270Y-100#
Maxim Integrated

IC NVSRAM 16MBIT 100NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
封裝: 36-DIP Module (0.600", 15.24mm)
庫存3,008
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (2M x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
hot DS1270W-150#
Maxim Integrated

IC NVSRAM 16MBIT 150NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
封裝: 36-DIP Module (0.600", 15.24mm)
庫存3,520
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (2M x 8)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
DS2431Q+U
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
封裝: 6-WDFN Exposed Pad
庫存6,304
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
DS28DG02E-3C+
Maxim Integrated

IC EEPROM 2KBIT 2MHZ 28TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.2 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
  • Supplier Device Package: 28-TSSOP-EP
封裝: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
庫存3,776
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
-
-
2.2 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.173", 4.40mm Width) Exposed Pad
28-TSSOP-EP
DS28DG02G-3C+
Maxim Integrated

IC EEPROM 2KBIT 2MHZ 36TQFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.2 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-TQFN (6x6)
封裝: 36-WFQFN Exposed Pad
庫存7,872
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
-
-
2.2 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
36-WFQFN Exposed Pad
36-TQFN (6x6)
DS3050W-100#
Maxim Integrated

IC NVSRAM 4MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
封裝: 256-BGA
庫存4,448
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)