頁 20 - IXYS 產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 816
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

IXYS 產品

記錄 5,468
頁  20/196
圖片
零件編號
製造商
描述
封裝
庫存
數量
IXGH25N100U1
IXYS

IGBT 1000V 50A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
  • Power - Max: 200W
  • Switching Energy: 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 800V, 25A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存6,096
hot IXGQ200N30PB
IXYS

IGBT 300V 400A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 400A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存13,464
MKI50-12E7
IXYS

MOD IGBT H-BRIDGE 1200V 90A E2

  • IGBT Type: NPT
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 90A
  • Power - Max: 350W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max): 800µA
  • Input Capacitance (Cies) @ Vce: 3.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
封裝: E2
庫存2,992
IXA30PG1200DHGLB
IXYS

IGBT PHASELEG 1200V 30A SMPD

  • IGBT Type: PT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 43A
  • Power - Max: 150W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Current - Collector Cutoff (Max): 2.1mA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD?.B
封裝: 9-SMD Module
庫存4,528
IXA40RG1200DHGLB-TRR
IXYS

IGBT PHASELEG 1200V 30A SMPD

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 63A
  • Power - Max: 230W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
  • Current - Collector Cutoff (Max): 150µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD?.B
封裝: 9-SMD Module
庫存4,128
IXTC180N10T
IXYS

MOSFET N-CH 100V 90A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
封裝: ISOPLUS220?
庫存3,296
IXFV22N50PS
IXYS

MOSFET N-CH 500V 22A PLUS220-SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 350W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
封裝: PLUS-220SMD
庫存2,544
IXTT170N10P
IXYS

MOSFET N-CH 100V 170A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 715W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存5,696
IXTA42N25P
IXYS

MOSFET N-CH 250V 42A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,624
IXTP4N80P
IXYS

MOSFET N-CH 800V 3.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存7,664
IXTA15N50L2
IXYS

MOSFET N-CH 500V 15A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,348
IXFK320N17T2
IXYS

MOSFET N-CH 170V 320A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 170V
  • Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1670W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
封裝: TO-264-3, TO-264AA
庫存7,680
IXTH20N50D
IXYS

MOSFET N-CH 500V 20A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存4,320
IXFN280N085
IXYS

MOSFET N-CH 85V 280A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 280A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封裝: SOT-227-4, miniBLOC
庫存5,888
VVZ175-12IO7
IXYS

RECT BRIDGE 3PH 167A 1200V PWSE2

  • Structure: Bridge, 3-Phase - SCRs/Diodes
  • Number of SCRs, Diodes: 3 SCRs, 3 Diodes
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 167A
  • Current - On State (It (RMS)) (Max): 89A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E2
封裝: PWS-E2
庫存6,976
MCMA50PD1600TB
IXYS

MOD THYRISTOR DUAL 16KV TO-240

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 50A
  • Current - On State (It (RMS)) (Max): 79A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 78mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 800A, 865A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封裝: TO-240AA
庫存6,928
MDO1200-20N1
IXYS

DIODE MODULE 2KV Y1-CU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
  • Supplier Device Package: Y1-CU
  • Operating Temperature - Junction: -
封裝: Y1-CU
庫存3,984
DHG5I600PM
IXYS

DIODE GEN PURP 600V 5A TO220ACFP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-220-2 Full Pack, Isolated Tab
庫存7,968
DGSK20-025A
IXYS

DIODE ARRAY SCHOTTKY 250V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io) (per Diode): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.3mA @ 250V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
封裝: TO-220-2
庫存6,224
MDD172-16N1
IXYS

DIODE MODULE 1.6KV 190A Y4-M6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 190A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 1600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
  • Supplier Device Package: Y4-M6
封裝: Y4-M6
庫存6,432
VUO80-16NO1
IXYS

RECT BRIDGE 3PH 82A 1600V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 82A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
  • Current - Reverse Leakage @ Vr: 40µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
封裝: V1-A
庫存2,576
VBE26-06NO7
IXYS

DIODE BRIDGE FAST DIODE ECO-PAC1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 44A
  • Voltage - Forward (Vf) (Max) @ If: 2.01V @ 15A
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
封裝: ECO-PAC1
庫存3,744
IXCY10M35A
IXYS

IC CURRENT REGULATOR DPAK

  • Function: Current Regulator
  • Sensing Method: -
  • Accuracy: -
  • Voltage - Input: -
  • Current - Output: 10mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,312
SLMD121H10
IXYS

MONO SOLAR CELL 42MM X 35MM

  • Power (Watts) - Max: 223mW
  • Current @ Pmpp: 44.6mA
  • Voltage @ Pmpp: 5.01V
  • Current Short Circuit (Isc): 50mA
  • Type: Monocrystalline
  • Voltage - Open Circuit: 6.3V
  • Operating Temperature: -
  • Package / Case: Cell (10)
  • Size / Dimension: 1.378" L x 1.654" W x 0.079" H (35.00mm x 42.00mm x 2.00mm)
封裝: Cell (10)
庫存4,230
IXTT12N150HV-TRL
IXYS

MOSFET N-CH 1500V 12A TO268HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV (IXTT)
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封裝: -
Request a Quote
IXXH140N65B4
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 840 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
  • Power - Max: 1200 W
  • Switching Energy: 5.75mJ (on), 2.67mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 54ns/270ns
  • Test Condition: 400V, 100A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 105 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封裝: -
Request a Quote
IXTA220N04T2-TRL
IXYS

MOSFET N-CH 40V 220A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
Request a Quote
MCMA160P1600YA
IXYS

SCR MODULE 1.6KV 160A MODULE

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 160 A
  • Current - On State (It (RMS)) (Max): 250 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封裝: -
庫存18