頁 181 - IXYS 產品 | 黑森爾電子

零件編號	製造商	描述	封裝	庫存
IXGH32N60AU1	IXYS	IGBT 600V 60A 200W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A Power - Max: 200W Switching Energy: 1.8mJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 25ns/120ns Test Condition: 480V, 32A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封裝: TO-247-3	庫存123,600
IXGP28N120B	IXYS	IGBT 1200V 50A 250W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A Power - Max: 250W Switching Energy: 2mJ (off) Input Type: Standard Gate Charge: 92nC Td (on/off) @ 25°C: 30ns/180ns Test Condition: 960V, 28A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存4,160
IXYH16N170C	IXYS	IGBT 1.7KV 40A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A Power - Max: 310W Switching Energy: 2.1mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 56nC Td (on/off) @ 25°C: 11ns/140ns Test Condition: 850V, 16A, 10 Ohm, 15V Reverse Recovery Time (trr): 19ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	封裝: TO-247-3	庫存7,552
IXGT6N170A	IXYS	IGBT 1700V 6A 75W TO268 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 6A Current - Collector Pulsed (Icm): 14A Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A Power - Max: 75W Switching Energy: 590µJ (on), 180µJ (off) Input Type: Standard Gate Charge: 18.5nC Td (on/off) @ 25°C: 46ns/220ns Test Condition: 850V, 6A, 33 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	庫存6,256
MIXA30WB1200TED	IXYS	IGBT MODULE 1200V 30A IGBT Type: PT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 43A Power - Max: 150W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Current - Collector Cutoff (Max): 1.5mA Input Capacitance (Cies) @ Vce: - Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	封裝: E2	庫存4,528
IXGN120N60A3	IXYS	IGBT 200A 600V SOT-227B IGBT Type: PT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 595W Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: 14.8nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	封裝: SOT-227-4, miniBLOC	庫存3,952
IXFN30N120P	IXYS	MOSFET N-CH 1200V 30A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封裝: SOT-227-4, miniBLOC	庫存5,344
IXFN300N10P	IXYS	MOSFET N-CH 100V 295A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 295A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1070W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封裝: SOT-227-4, miniBLOC	庫存5,552
IXTX46N50L	IXYS	MOSFET N-CH 500V 46A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存3,232
IXFA10N80P	IXYS	MOSFET N-CH 800V 10A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,080
IXTQ40N50L2	IXYS	MOSFET N-CH 500V 40A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封裝: TO-3P-3, SC-65-3	庫存4,576
IXFR64N60Q3	IXYS	MOSFET N-CH 600V 42A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	封裝: TO-247-3	庫存6,144
IXFH60N50P3	IXYS	MOSFET N-CH 500V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	封裝: TO-247-3	庫存103,464
VVZB120-16IO1	IXYS	RECT BRIDGE 3PH 120V 1600V V2 Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 120A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 750A @ 50MHz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V2-PAK	封裝: V2-PAK	庫存5,504
VHF25-12IO7	IXYS	RECT BRIDGE 1PH 1200V ECOPAC1 Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1) Number of SCRs, Diodes: 2 SCRs, 2 Diodes Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 25mA Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210A Current - Hold (Ih) (Max): 50mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1	封裝: ECO-PAC1	庫存2,512
MCC250-16IO1	IXYS	MOD THYRISTOR DUAL 1600V Y2-DCB Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 287A Current - On State (It (RMS)) (Max): 450A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y2-DCB	封裝: Y2-DCB	庫存4,448
DSS10-006A	IXYS	DIODE SCHOTTKY 60V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 730mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存4,832
MDD310-14N1	IXYS	DIODE MODULE 1.4KV 305A Y2-DCB Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 305A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 1400V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y2-DCB Supplier Device Package: Y2-DCB	封裝: Y2-DCB	庫存6,720
DSS2X160-01A	IXYS	DIODE MODULE 100V 160A SOT227B Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 160A Voltage - Forward (Vf) (Max) @ If: 980mV @ 160A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 100V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	封裝: SOT-227-4, miniBLOC	庫存7,232
VBO160-14NO7	IXYS	DIODE BRIDGE 174A 1400V PWS-E-1 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 174A Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A Current - Reverse Leakage @ Vr: 300µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-E Supplier Device Package: PWS-E	封裝: PWS-E	庫存3,408
VBO30-14NO7	IXYS	DIODE BRIDGE 35A 1400V PWS-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-A Supplier Device Package: PWS-A	封裝: PWS-A	庫存3,296
KXOB22-12X1	IXYS	MONO SOLAR CELL 22MM X 7MM Power (Watts) - Max: - Current @ Pmpp: 44.6mA Voltage @ Pmpp: 500mV Current Short Circuit (Isc): 50mA Type: Monocrystalline Voltage - Open Circuit: 630mV Operating Temperature: - Package / Case: Cells Size / Dimension: 0.866" L x 0.276" W x 0.074" H (22.00mm x 7.00mm x 1.80mm)	封裝: Cells	庫存8,964
IXTA08N100D2HV-TRL	IXYS	MOSFET N-CH 1000V 800MA TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
CLE40E1200HB	IXYS	SCR 1.2KV 63A TO247 Voltage - Off State: 1.2 kV Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 50 mA Voltage - On State (Vtm) (Max): 1.47 V Current - On State (It (AV)) (Max): 40 A Current - On State (It (RMS)) (Max): 63 A Current - Hold (Ih) (Max): 120 mA Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 600A, 650A SCR Type: Standard Recovery Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	封裝: -	Request a Quote
IXTT34N65X2HV	IXYS	MOSFET N-CH 650V 34A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXTT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	Request a Quote
IXA12IF1200TC-TUB	IXYS	IGBT PT 1200V 20A TO268AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Power - Max: 85 W Switching Energy: 1.1mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 27 nC Td (on/off) @ 25°C: - Test Condition: 600V, 10A, 100Ohm, 15V Reverse Recovery Time (trr): 350 ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA	封裝: -	Request a Quote
MIXG240W1200PZ-PC	IXYS	IGBT MOD MIXG240W1200PZTEH-PC IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote
IXFP130N15X3	IXYS	MOSFET N-CH 150V 130A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封裝: -	庫存3

IXGH32N60AU1

IXYS

IGBT 600V 60A 200W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Power - Max: 200W
Switching Energy: 1.8mJ (off)
Input Type: Standard
Gate Charge: 125nC
Td (on/off) @ 25°C: 25ns/120ns
Test Condition: 480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

庫存123,600

IXGP28N120B

IXYS

IGBT 1200V 50A 250W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Power - Max: 250W
Switching Energy: 2mJ (off)
Input Type: Standard
Gate Charge: 92nC
Td (on/off) @ 25°C: 30ns/180ns
Test Condition: 960V, 28A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存4,160

IXYH16N170C

IXYS

IGBT 1.7KV 40A TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Power - Max: 310W
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 56nC
Td (on/off) @ 25°C: 11ns/140ns
Test Condition: 850V, 16A, 10 Ohm, 15V
Reverse Recovery Time (trr): 19ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)

封裝: TO-247-3

庫存7,552

IXGT6N170A

IXYS

IGBT 1700V 6A 75W TO268

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 6A
Current - Collector Pulsed (Icm): 14A
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Power - Max: 75W
Switching Energy: 590µJ (on), 180µJ (off)
Input Type: Standard
Gate Charge: 18.5nC
Td (on/off) @ 25°C: 46ns/220ns
Test Condition: 850V, 6A, 33 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

庫存6,256

MIXA30WB1200TED

IXYS

IGBT MODULE 1200V 30A

IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 43A
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Current - Collector Cutoff (Max): 1.5mA
Input Capacitance (Cies) @ Vce: -
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

封裝: E2

庫存4,528

IXGN120N60A3

IXYS

IGBT 200A 600V SOT-227B

IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Power - Max: 595W
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 14.8nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

封裝: SOT-227-4, miniBLOC

庫存3,952

IXFN30N120P

IXYS

MOSFET N-CH 1200V 30A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 30A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存5,344

IXFN300N10P

IXYS

MOSFET N-CH 100V 295A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 295A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1070W (Tc)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存5,552

IXTX46N50L

IXYS

MOSFET N-CH 500V 46A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存3,232

IXFA10N80P

IXYS

MOSFET N-CH 800V 10A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXFA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,080

IXTQ40N50L2

IXYS

MOSFET N-CH 500V 40A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封裝: TO-3P-3, SC-65-3

庫存4,576

IXFR64N60Q3

IXYS

MOSFET N-CH 600V 42A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 104 mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,144

IXFH60N50P3

IXYS

MOSFET N-CH 500V 60A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存103,464

VVZB120-16IO1

IXYS

RECT BRIDGE 3PH 120V 1600V V2

Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 120A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 750A @ 50MHz
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V2-PAK

封裝: V2-PAK

庫存5,504

VHF25-12IO7

IXYS

RECT BRIDGE 1PH 1200V ECOPAC1

Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
Number of SCRs, Diodes: 2 SCRs, 2 Diodes
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 32A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 25mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210A
Current - Hold (Ih) (Max): 50mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1

封裝: ECO-PAC1

庫存2,512

MCC250-16IO1

IXYS

MOD THYRISTOR DUAL 1600V Y2-DCB

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 287A
Current - On State (It (RMS)) (Max): 450A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB

封裝: Y2-DCB

庫存4,448

DSS10-006A

IXYS

DIODE SCHOTTKY 60V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 730mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存4,832

MDD310-14N1

IXYS

DIODE MODULE 1.4KV 305A Y2-DCB

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io) (per Diode): 305A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 1400V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Supplier Device Package: Y2-DCB

封裝: Y2-DCB

庫存6,720

DSS2X160-01A

IXYS

DIODE MODULE 100V 160A SOT227B

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 160A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 160A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 100V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

封裝: SOT-227-4, miniBLOC

庫存7,232

VBO160-14NO7

IXYS

DIODE BRIDGE 174A 1400V PWS-E-1

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 174A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-E
Supplier Device Package: PWS-E

封裝: PWS-E

庫存3,408

VBO30-14NO7

IXYS

DIODE BRIDGE 35A 1400V PWS-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-A
Supplier Device Package: PWS-A

封裝: PWS-A

庫存3,296

KXOB22-12X1

IXYS

MONO SOLAR CELL 22MM X 7MM

Power (Watts) - Max: -
Current @ Pmpp: 44.6mA
Voltage @ Pmpp: 500mV
Current Short Circuit (Isc): 50mA
Type: Monocrystalline
Voltage - Open Circuit: 630mV
Operating Temperature: -
Package / Case: Cells
Size / Dimension: 0.866" L x 0.276" W x 0.074" H (22.00mm x 7.00mm x 1.80mm)

封裝: Cells

庫存8,964

IXTA08N100D2HV-TRL

IXYS

MOSFET N-CH 1000V 800MA TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

Request a Quote

CLE40E1200HB

IXYS

SCR 1.2KV 63A TO247

Voltage - Off State: 1.2 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 50 mA
Voltage - On State (Vtm) (Max): 1.47 V
Current - On State (It (AV)) (Max): 40 A
Current - On State (It (RMS)) (Max): 63 A
Current - Hold (Ih) (Max): 120 mA
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A, 650A
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

封裝: -

Request a Quote

IXTT34N65X2HV

IXYS

MOSFET N-CH 650V 34A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXTT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

Request a Quote

IXA12IF1200TC-TUB

IXYS

IGBT PT 1200V 20A TO268AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Power - Max: 85 W
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 27 nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr): 350 ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA

封裝: -

Request a Quote

MIXG240W1200PZ-PC

IXYS

IGBT MOD MIXG240W1200PZTEH-PC

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

IXFP130N15X3

IXYS

MOSFET N-CH 150V 130A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封裝: -

庫存3