頁 15 - IXYS 產品 | 黑森爾電子

零件編號	製造商	描述	封裝	庫存
IXGJ40N60C2D1	IXYS	IGBT 600V 75A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 300W Switching Energy: 200µJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 18ns/90ns Test Condition: 400V, 30A, 3 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3, Short Tab Supplier Device Package: TO-268	封裝: TO-220-3, Short Tab	庫存3,808
IXDH20N120D1	IXYS	IGBT 1200V 38A 200W TO247AD IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 38A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 200W Switching Energy: 3.1mJ (on), 2.4mJ (off) Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: - Test Condition: 600V, 20A, 82 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	封裝: TO-3P-3 Full Pack	庫存6,176
IXYN30N170CV1	IXYS	1700V/85A HIGH VOLTAGE XPT IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 88A Current - Collector Pulsed (Icm): 275A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A Power - Max: 680W Switching Energy: 5.9mJ (on), 3.3mJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 850V, 30A, 2.7 Ohm, 15V Reverse Recovery Time (trr): 160ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	封裝: SOT-227-4, miniBLOC	庫存4,192
IXGH2N250	IXYS	IGBT 2500V 5.5A 32W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 5.5A Current - Collector Pulsed (Icm): 13.5A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A Power - Max: 32W Switching Energy: - Input Type: Standard Gate Charge: 10.5nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封裝: TO-247-3	庫存7,632
VWI3X20-06P1	IXYS	MODULE IGBT 3X20A 600V ECO-PAC1 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	封裝: ECO-PAC1	庫存2,176
IXFN38N100Q2	IXYS	MOSFET N-CH 1000V 38A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封裝: SOT-227-4, miniBLOC	庫存7,168
IXFK27N80	IXYS	MOSFET N-CH 800V 27A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	封裝: TO-264-3, TO-264AA	庫存40,884
IXFK170N10P	IXYS	MOSFET N-CH 100V 170A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 715W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	封裝: TO-264-3, TO-264AA	庫存2,032
IXTP02N120P	IXYS	MOSFET N-CH 1200V 0.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 75 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: TO-220-3	庫存4,576
IXFH40N85X	IXYS	MOSFET NCH 850V 40A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 860W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封裝: TO-247-3	庫存6,360
IXFP270N06T3	IXYS	60V/270A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: TO-220-3	庫存7,760
IXFX64N60P3	IXYS	MOSFET N-CH 600V 64A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1130W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存6,384
150-501N04A-00	IXYS	RF MOSFET N-CHANNEL DE150 Transistor Type: N-Channel Frequency: 100MHz Gain: - Voltage - Test: - Current Rating: 25µA Noise Figure: - Current - Test: - Power - Output: 200W Voltage - Rated: 500V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE150	封裝: 6-SMD, Flat Lead Exposed Pad	庫存6,512
GWM120-0075X1-SL	IXYS	MOSFET 6N-CH 75V 110A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 110A Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	封裝: 17-SMD, Flat Leads	庫存5,392
CS23-08IO2	IXYS	SCR PHASE CONTROL 800V 25A TO-48 Voltage - Off State: 800V Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 50mA Voltage - On State (Vtm) (Max): 1.8V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): 50A Current - Hold (Ih) (Max): 100mA Current - Off State (Max): 3mA Current - Non Rep. Surge 50, 60Hz (Itsm): 450A, 480A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis, Stud Mount Package / Case: TO-208AA, TO-48-3, Stud Supplier Device Package: TO-208AA (TO-48)	封裝: TO-208AA, TO-48-3, Stud	庫存6,420
VCK105-12IO7	IXYS	MOD THYRISTOR 1200V 105A ECOPAC2 Structure: Common Cathode - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 105A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2	封裝: ECO-PAC2	庫存5,776
MCD56-18IO1B	IXYS	MOD THYRISTOR/DIO 1800V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 64A Current - On State (It (RMS)) (Max): 100A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	封裝: TO-240AA	庫存4,656
MLO110-14IO7	IXYS	MODULE AC CONTROL 1400V ECO-PAC1 Structure: 1-Phase Controller - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 51A Current - On State (It (RMS)) (Max): 81A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1070A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	封裝: Module	庫存4,656
IXIDM1401_1505_O	IXYS	POWER MODULE H-BRIDGE 15V 10A Type: IGBT Configuration: Half Bridge Current: 10A Voltage: 15V Voltage - Isolation: 4000VDC Package / Case: Module	封裝: Module	庫存7,680
DGSK32-018CS	IXYS	DIODE ARRAY SCHOTTKY 180V TO263 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io) (per Diode): 24A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23ns Current - Reverse Leakage @ Vr: 250µA @ 180V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,480
MDD310-22N1	IXYS	DIODE MODULE 2.2KV 305A Y2-DCB Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io) (per Diode): 305A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 2200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y2-DCB Supplier Device Package: Y2-DCB	封裝: Y2-DCB	庫存2,592
IXDI414PI	IXYS	IC DRIVER MOSF/IGBT 14A 8-DIP Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 20ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存7,860
IXDD404SIA	IXYS	IC MOSFET DRVR DUAL 4A 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 16ns, 13ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存92,256
IXFA12N65X2-TRL	IXYS	MOSFET N-CH 650V 12A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
N0530YN220	IXYS	SCR 2.2KV 1040A W91 Voltage - Off State: 2.2 kV Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - Gate Trigger (Igt) (Max): 250 mA Voltage - On State (Vtm) (Max): 3.5 V Current - On State (It (AV)) (Max): 530 A Current - On State (It (RMS)) (Max): 1040 A Current - Hold (Ih) (Max): 300 mA Current - Off State (Max): 70 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -60°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AB, B-PuK Supplier Device Package: W91	封裝: -	Request a Quote
DSEP12-12BZ-TRL	IXYS	DIODE GEN PURP 1.2KV 12A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: 5pF @ 600V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote
IXFP8N65X2	IXYS	MOSFET N-CH 650V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封裝: -	Request a Quote
DMA10P1200HR	IXYS	DIODE GEN PURP 1.2KV 10A ISO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 4pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISO247 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote

IXGJ40N60C2D1

IXYS

IGBT 600V 75A 300W TO268

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Power - Max: 300W
Switching Energy: 200µJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 18ns/90ns
Test Condition: 400V, 30A, 3 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Supplier Device Package: TO-268

封裝: TO-220-3, Short Tab

庫存3,808

IXDH20N120D1

IXYS

IGBT 1200V 38A 200W TO247AD

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 38A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Power - Max: 200W
Switching Energy: 3.1mJ (on), 2.4mJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 20A, 82 Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

封裝: TO-3P-3 Full Pack

庫存6,176

IXYN30N170CV1

IXYS

1700V/85A HIGH VOLTAGE XPT IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 88A
Current - Collector Pulsed (Icm): 275A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Power - Max: 680W
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 28ns/150ns
Test Condition: 850V, 30A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): 160ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

封裝: SOT-227-4, miniBLOC

庫存4,192

IXGH2N250

IXYS

IGBT 2500V 5.5A 32W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 5.5A
Current - Collector Pulsed (Icm): 13.5A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Power - Max: 32W
Switching Energy: -
Input Type: Standard
Gate Charge: 10.5nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

庫存7,632

VWI3X20-06P1

IXYS

MODULE IGBT 3X20A 600V ECO-PAC1

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

封裝: ECO-PAC1

庫存2,176

IXFN38N100Q2

IXYS

MOSFET N-CH 1000V 38A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 38A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存7,168

IXFK27N80

IXYS

MOSFET N-CH 800V 27A TO-264AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9740pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 13.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存40,884

IXFK170N10P

IXYS

MOSFET N-CH 100V 170A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存2,032

IXTP02N120P

IXYS

MOSFET N-CH 1200V 0.2A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 75 Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存4,576

IXFH40N85X

IXYS

MOSFET NCH 850V 40A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 860W (Tc)
Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,360

IXFP270N06T3

IXYS

60V/270A TRENCHT3 HIPERFET MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存7,760

IXFX64N60P3

IXYS

MOSFET N-CH 600V 64A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1130W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,384

150-501N04A-00

IXYS

RF MOSFET N-CHANNEL DE150

Transistor Type: N-Channel
Frequency: 100MHz
Gain: -
Voltage - Test: -
Current Rating: 25µA
Noise Figure: -
Current - Test: -
Power - Output: 200W
Voltage - Rated: 500V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE150

封裝: 6-SMD, Flat Lead Exposed Pad

庫存6,512

GWM120-0075X1-SL

IXYS

MOSFET 6N-CH 75V 110A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

封裝: 17-SMD, Flat Leads

庫存5,392

CS23-08IO2

IXYS

SCR PHASE CONTROL 800V 25A TO-48

Voltage - Off State: 800V
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 50mA
Voltage - On State (Vtm) (Max): 1.8V
Current - On State (It (AV)) (Max): 32A
Current - On State (It (RMS)) (Max): 50A
Current - Hold (Ih) (Max): 100mA
Current - Off State (Max): 3mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 450A, 480A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AA, TO-48-3, Stud
Supplier Device Package: TO-208AA (TO-48)

封裝: TO-208AA, TO-48-3, Stud

庫存6,420

VCK105-12IO7

IXYS

MOD THYRISTOR 1200V 105A ECOPAC2

Structure: Common Cathode - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 105A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2

封裝: ECO-PAC2

庫存5,776

MCD56-18IO1B

IXYS

MOD THYRISTOR/DIO 1800V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 64A
Current - On State (It (RMS)) (Max): 100A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

封裝: TO-240AA

庫存4,656

MLO110-14IO7

IXYS

MODULE AC CONTROL 1400V ECO-PAC1

Structure: 1-Phase Controller - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 51A
Current - On State (It (RMS)) (Max): 81A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1070A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

封裝: Module

庫存4,656

IXIDM1401_1505_O

IXYS

POWER MODULE H-BRIDGE 15V 10A

Type: IGBT
Configuration: Half Bridge
Current: 10A
Voltage: 15V
Voltage - Isolation: 4000VDC
Package / Case: Module

封裝: Module

庫存7,680

DGSK32-018CS

IXYS

DIODE ARRAY SCHOTTKY 180V TO263

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io) (per Diode): 24A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23ns
Current - Reverse Leakage @ Vr: 250µA @ 180V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,480

MDD310-22N1

IXYS

DIODE MODULE 2.2KV 305A Y2-DCB

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io) (per Diode): 305A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 2200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Supplier Device Package: Y2-DCB

封裝: Y2-DCB

庫存2,592

IXDI414PI

IXYS

IC DRIVER MOSF/IGBT 14A 8-DIP

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 22ns, 20ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存7,860

IXDD404SIA

IXYS

IC MOSFET DRVR DUAL 4A 8-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 16ns, 13ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存92,256

IXFA12N65X2-TRL

IXYS

MOSFET N-CH 650V 12A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

Request a Quote

N0530YN220

IXYS

SCR 2.2KV 1040A W91

Voltage - Off State: 2.2 kV
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - Gate Trigger (Igt) (Max): 250 mA
Voltage - On State (Vtm) (Max): 3.5 V
Current - On State (It (AV)) (Max): 530 A
Current - On State (It (RMS)) (Max): 1040 A
Current - Hold (Ih) (Max): 300 mA
Current - Off State (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Supplier Device Package: W91

封裝: -

Request a Quote

DSEP12-12BZ-TRL

IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

IXFP8N65X2

IXYS

MOSFET N-CH 650V 8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封裝: -

Request a Quote

DMA10P1200HR

IXYS

DIODE GEN PURP 1.2KV 10A ISO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISO247
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote