頁 131 - IXYS 產品 | 黑森爾電子
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IXYS 產品

記錄 5,468
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IXBF10N300C
IXYS

IGBT 3000V 29A 240W ISOPLUSI4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 29A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
  • Power - Max: 240W
  • Switching Energy: 7.2mJ (on), 1.04mJ (off)
  • Input Type: Standard
  • Gate Charge: 208nC
  • Td (on/off) @ 25°C: 32ns/390ns
  • Test Condition: 1500V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 700ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
封裝: i4-Pac?-5 (3 leads)
庫存7,264
IXGR16N170AH1
IXYS

IGBT 1700V 16A 120W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 8A
  • Power - Max: 120W
  • Switching Energy: 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/200ns
  • Test Condition: 850V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封裝: ISOPLUS247?
庫存6,944
hot IXGH60N60C3D1
IXYS

IGBT 600V 75A 380W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 380W
  • Switching Energy: 800µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 21ns/70ns
  • Test Condition: 480V, 40A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存475,464
MIXA81WB1200TEH
IXYS

IGBT MODULE 1200V 84A

  • IGBT Type: PT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 120A
  • Power - Max: 390W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Current - Collector Cutoff (Max): 200µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
封裝: E3
庫存4,752
IXFR26N100P
IXYS

MOSFET N-CH 1000V 15A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
封裝: ISOPLUS247?
庫存6,368
IXFP16N60P3
IXYS

MOSFET N-CH 600V 16A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 347W (Tc)
  • Rds On (Max) @ Id, Vgs: 470 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存6,368
IXTH62N65X2
IXYS

MOSFET N-CH 650V 62A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存5,616
IXTT20P50P
IXYS

MOSFET P-CH 500V 20A TO-268

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存7,068
CS60-16IO1R
IXYS

THYRISTOR PHASE 1600V ISOPLUS247

  • Voltage - Off State: 1600V
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Voltage - On State (Vtm) (Max): 1.4V
  • Current - On State (It (AV)) (Max): 48A
  • Current - On State (It (RMS)) (Max): 75A
  • Current - Hold (Ih) (Max): 200mA
  • Current - Off State (Max): 10mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 140°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存6,816
CS45-16IO1R
IXYS

THYRISTOR PHASE 1600V ISOPLUS247

  • Voltage - Off State: 1600V
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Voltage - On State (Vtm) (Max): 1.64V
  • Current - On State (It (AV)) (Max): 48A
  • Current - On State (It (RMS)) (Max): 75A
  • Current - Hold (Ih) (Max): 100mA
  • Current - Off State (Max): 5mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 140°C
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封裝: ISOPLUS247?
庫存8,472
MCC72-08IO8B
IXYS

MOD THYRISTOR DUAL 800V TO-240AA

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 115A
  • Current - On State (It (RMS)) (Max): 180A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封裝: TO-240AA
庫存5,984
DSEP29-03A
IXYS

DIODE GEN PURP 300V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: TO-220-2
庫存7,856
DGS9-030AS
IXYS

DIODE SCHOTTKY 300V 11A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.3mA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,592
DGSK40-025AS
IXYS

DIODE ARRAY SCHOTTKY 250V TO263

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io) (per Diode): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 250V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,408
MDD312-18N1
IXYS

DIODE MODULE 1.8KV 310A Y1-CU

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 310A
  • Voltage - Forward (Vf) (Max) @ If: 1.32V @ 600A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
  • Supplier Device Package: Y1-CU
封裝: Y1-CU
庫存6,688
DSA70C100HB
IXYS

DIODE ARRAY SCHOTTKY 100V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 450µA @ 100V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存7,584
VUO70-12NO7
IXYS

RECT BRIDGE 3PH 70A 1200V FO-T-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
  • Supplier Device Package: FO-T-A
封裝: FO-T-A
庫存3,904
VBO52-18NO7
IXYS

DIODE BRIDGE 52A 1800V PWS-D

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 52A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-D
  • Supplier Device Package: PWS-D
封裝: PWS-D
庫存2,608
LDS8680008-T2
IXYS

IC LED DRIVER RGLTR 400MA 8TDFN

  • Type: DC DC Regulator
  • Topology: Switched Capacitor (Charge Pump)
  • Internal Switch(s): Yes
  • Number of Outputs: 2
  • Voltage - Supply (Min): 2.7V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 6V
  • Current - Output / Channel: 400mA (Flash)
  • Frequency: 1MHz
  • Dimming: -
  • Applications: Camera Flash
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
封裝: 8-WFDFN Exposed Pad
庫存19,344
IXBD4410PI
IXYS

IC LOW SIDE DRIVER 16DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1V, 3.65V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
封裝: 16-DIP (0.300", 7.62mm)
庫存5,856
DCG10P1200HR
IXYS

DIODE SCHOTT 1.2KV 12.5A ISO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: 755pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
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MDMA360UC1600TED
IXYS

3-PH. HALF CONTR. REC.BRIDGE

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 360 A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
  • Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
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MCMA1400E1600CD
IXYS

SCR MODULE 1.6KV 1100A COMPACK

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 1100 A
  • Current - On State (It (RMS)) (Max): 1700 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 600 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A, 38900A
  • Current - Hold (Ih) (Max): 600 mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ComPack
封裝: -
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IXBT42N170-TRL
IXYS

IGBT 1700V 80A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
  • Power - Max: 360 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 188 nC
  • Td (on/off) @ 25°C: 37ns/340ns
  • Test Condition: 850V, 42A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: -
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IXTY1R4N60P-TRL
IXYS

MOSFET N-CH 600V 1.4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
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MCMA450UH1600TEH
IXYS

SCR MODULE 1.6KV 450A E3 PACK

  • Structure: -
  • Number of SCRs, Diodes: 3 SCRs, 3 Diodes
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 450 A
  • Current - On State (It (RMS)) (Max): 50 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 2.4kA, 2.59kA
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: E3
封裝: -
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MCMA650MT1400NKD
IXYS

TRIAC 1.4KV 650A Y1-2-CU

  • Triac Type: Standard
  • Voltage - Off State: 1.4 kV
  • Current - On State (It (RMS)) (Max): 650 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9.6kA, 10.4kA
  • Current - Gate Trigger (Igt) (Max): 220 mA
  • Current - Hold (Ih) (Max): 150 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-2-CU
  • Supplier Device Package: Y1-2-CU
封裝: -
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IXYY8N90C3-TRL
IXYS

IXYY8N90C3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 48 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
  • Power - Max: 125 W
  • Switching Energy: 460µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.3 nC
  • Td (on/off) @ 25°C: 16ns/40ns
  • Test Condition: 450V, 8A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 20 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: -
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