頁 5 - IXYS 產品 - 電晶體 - IGBT - 單 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559-836
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

IXYS 產品 - 電晶體 - IGBT - 單

記錄 1,002
頁  5/36
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXYH50N170C
IXYS

IGBT 1700V 178A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 178 A
  • Current - Collector Pulsed (Icm): 460 A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 1500 W
  • Switching Energy: 8.7mJ (on), 5.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 260 nC
  • Td (on/off) @ 25°C: 20ns/180ns
  • Test Condition: 850V, 50A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 44 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封裝: -
Request a Quote
1700 V
178 A
460 A
3.7V @ 15V, 50A
1500 W
8.7mJ (on), 5.6mJ (off)
Standard
260 nC
20ns/180ns
850V, 50A, 1Ohm, 15V
44 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXYP10N65B3D1
IXYS

IGBT PT 650V 32A TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
  • Power - Max: 160 W
  • Switching Energy: 300µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 20 nC
  • Td (on/off) @ 25°C: 17ns/125ns
  • Test Condition: 400V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: -
Request a Quote
650 V
32 A
62 A
1.95V @ 15V, 10A
160 W
300µJ (on), 200µJ (off)
Standard
20 nC
17ns/125ns
400V, 10A, 50Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IXBT42N170-TRL
IXYS

IGBT 1700V 80A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
  • Power - Max: 360 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 188 nC
  • Td (on/off) @ 25°C: 37ns/340ns
  • Test Condition: 850V, 42A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: -
Request a Quote
1700 V
80 A
300 A
2.8V @ 15V, 42A
360 W
-
Standard
188 nC
37ns/340ns
850V, 42A, 10Ohm, 15V
-
-
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
IXYK85N120C4H1
IXYS

IGBT TRENCH 1200V 220A SOT227B

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 220 A
  • Current - Collector Pulsed (Icm): 420 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
  • Power - Max: 1150 W
  • Switching Energy: 4.3mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 192 nC
  • Td (on/off) @ 25°C: 35ns/280ns
  • Test Condition: 600V, 50A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 265 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封裝: -
庫存882
1200 V
220 A
420 A
2.5V @ 15V, 85A
1150 W
4.3mJ (on), 2mJ (off)
Standard
192 nC
35ns/280ns
600V, 50A, 5Ohm, 15V
265 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
IXG50I4500KN
IXYS

IGBT PT 4500V 74A ISOPLUS264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 4500 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264™
  • Supplier Device Package: ISOPLUS264™
封裝: -
Request a Quote
4500 V
74 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS264™
ISOPLUS264™
IXYA20N120A4HV
IXYS

DISC IGBT XPT-GENX4 TO-263D2

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 135 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 3.6mJ (on), 2.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 46 nC
  • Td (on/off) @ 25°C: 12ns/275ns
  • Test Condition: 800mV, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 54 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封裝: -
Request a Quote
1200 V
80 A
135 A
1.9V @ 15V, 20A
375 W
3.6mJ (on), 2.75mJ (off)
Standard
46 nC
12ns/275ns
800mV, 20A, 10Ohm, 15V
54 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IXXN340N65B4
IXYS

IGBT MODULE DISC IGBT SOT227B

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 520 A
  • Current - Collector Pulsed (Icm): 1200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
  • Power - Max: 1500 W
  • Switching Energy: 4.4mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 553 nC
  • Td (on/off) @ 25°C: 62ns/245ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封裝: -
Request a Quote
650 V
520 A
1200 A
1.7V @ 15V, 160A
1500 W
4.4mJ (on), 2.2mJ (off)
Standard
553 nC
62ns/245ns
400V, 100A, 1Ohm, 15V
65 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
IXGK100N170
IXYS

IGBT PT 1000V 120A TO-264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 170 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Power - Max: 830 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 425 nC
  • Td (on/off) @ 25°C: 35ns/285ns
  • Test Condition: 850V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: PLUS264™
封裝: -
庫存63
1700 V
170 A
600 A
3V @ 15V, 100A
830 W
-
Standard
425 nC
35ns/285ns
850V, 100A, 1Ohm, 15V
-
-55°C ~ 150°C
Through Hole
TO-264-3, TO-264AA
PLUS264™
IXA70R1200NA
IXYS

DISC IGBT XPT-GENX3 SOT-227B(MIN

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 350 W
  • Switching Energy: 4.5mJ (on), 5.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 190 nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 50A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封裝: -
Request a Quote
1200 V
100 A
-
2.1V @ 15V, 50A
350 W
4.5mJ (on), 5.5mJ (off)
Standard
190 nC
70ns/250ns
600V, 50A, 15Ohm, 15V
-
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
IXYX40N450HV
IXYS

IGBT 4500V 95A TO247PLUS-HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 4500 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 350 A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
  • Power - Max: 660 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 170 nC
  • Td (on/off) @ 25°C: 36ns/110ns
  • Test Condition: 960V, 40A, 2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247PLUS-HV
封裝: -
Request a Quote
4500 V
95 A
350 A
3.9V @ 15V, 40A
660 W
-
Standard
170 nC
36ns/110ns
960V, 40A, 2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
TO-247PLUS-HV
IXGT6N170AHV-TRL
IXYS

IGBT 1700V 7A TO268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 14 A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 75 W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5 nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXGT)
封裝: -
Request a Quote
1700 V
6 A
14 A
7V @ 15V, 3A
75 W
590µJ (on), 180µJ (off)
Standard
18.5 nC
46ns/220ns
850V, 6A, 33Ohm, 15V
40 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXGT)
IXYP10N65C3D1M
IXYS

IGBT 650V 15A TO220 ISOL TAB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
  • Power - Max: 53 W
  • Switching Energy: 240µJ (on), 170µJ (off)
  • Input Type: Standard
  • Gate Charge: 18 nC
  • Td (on/off) @ 25°C: 20ns/77ns
  • Test Condition: 400V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr): 26 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220 Isolated Tab
封裝: -
Request a Quote
650 V
15 A
50 A
2.6V @ 15V, 10A
53 W
240µJ (on), 170µJ (off)
Standard
18 nC
20ns/77ns
400V, 10A, 50Ohm, 15V
26 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
IXYH120N65C3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 260 A
  • Current - Collector Pulsed (Icm): 620 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
  • Power - Max: 1360 W
  • Switching Energy: 1.25mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 265 nC
  • Td (on/off) @ 25°C: 28ns/127ns
  • Test Condition: 400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封裝: -
Request a Quote
650 V
260 A
620 A
2.8V @ 15V, 100A
1360 W
1.25mJ (on), 500µJ (off)
Standard
265 nC
28ns/127ns
400V, 50A, 2Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXYH120N65B3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 760 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Power - Max: 1360 W
  • Switching Energy: 1.34mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 30ns/168ns
  • Test Condition: 400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 28 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封裝: -
Request a Quote
650 V
340 A
760 A
1.9V @ 15V, 100A
1360 W
1.34mJ (on), 1.5mJ (off)
Standard
250 nC
30ns/168ns
400V, 50A, 2Ohm, 15V
28 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXYH120N65A5
IXYS

IGBT 650V 120A X5 XPT TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 290 A
  • Current - Collector Pulsed (Icm): 790 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
  • Power - Max: 830 W
  • Switching Energy: 1.25mJ (on), 3.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 314 nC
  • Td (on/off) @ 25°C: 45ns/370ns
  • Test Condition: 400V, 60A, 3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封裝: -
庫存168
650 V
290 A
790 A
1.35V @ 15V, 75A
830 W
1.25mJ (on), 3.2mJ (off)
Standard
314 nC
45ns/370ns
400V, 60A, 3Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXYH40N65B3D1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 195 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 300 W
  • Switching Energy: 800µJ (on), 1.25mJ (off)
  • Input Type: Standard
  • Gate Charge: 68 nC
  • Td (on/off) @ 25°C: 20ns/140ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 37 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封裝: -
Request a Quote
650 V
86 A
195 A
2V @ 15V, 40A
300 W
800µJ (on), 1.25mJ (off)
Standard
68 nC
20ns/140ns
400V, 30A, 10Ohm, 15V
37 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXG100IF1200HF
IXYS

IGBT PT 1200V 140A PLUS247-3

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
封裝: -
Request a Quote
1200 V
140 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3 Variant
PLUS247™-3
IXYA20N120B4HV
IXYS

IGBT 1200V 20A GENX4 XPT TO263D2

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 76 A
  • Current - Collector Pulsed (Icm): 130 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 3.9mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 15ns/200ns
  • Test Condition: 960mV, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 47 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封裝: -
庫存693
1200 V
76 A
130 A
2.1V @ 15V, 20A
375 W
3.9mJ (on), 1.6mJ (off)
Standard
44 nC
15ns/200ns
960mV, 20A, 10Ohm, 15V
47 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IXYA20N120C3HV
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 278 W
  • Switching Energy: 1.3mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 53 nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 600V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封裝: -
Request a Quote
1200 V
40 A
96 A
3.4V @ 15V, 20A
278 W
1.3mJ (on), 1mJ (off)
Standard
53 nC
20ns/90ns
600V, 20A, 10Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IXYA20N120C4HV
IXYS

IGBT 1200V 20A X4 HSPEED TO263D2

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 68 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 4.4mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 14ns/160ns
  • Test Condition: 960mV, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 53 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封裝: -
庫存624
1200 V
68 A
120 A
2.5V @ 15V, 20A
375 W
4.4mJ (on), 1mJ (off)
Standard
44 nC
14ns/160ns
960mV, 20A, 10Ohm, 15V
53 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IXYK200N65B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 410 A
  • Current - Collector Pulsed (Icm): 1100 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
  • Power - Max: 1560 W
  • Switching Energy: 5mJ (on), 4mJ (off)
  • Input Type: Standard
  • Gate Charge: 340 nC
  • Td (on/off) @ 25°C: 60ns/370ns
  • Test Condition: 400V, 100A, 0Ohm, 15V
  • Reverse Recovery Time (trr): 108 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封裝: -
Request a Quote
650 V
410 A
1100 A
1.7V @ 15V, 100A
1560 W
5mJ (on), 4mJ (off)
Standard
340 nC
60ns/370ns
400V, 100A, 0Ohm, 15V
108 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IXYP20N65B3D1
IXYS

IGBT PT 650V 58A TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 58 A
  • Current - Collector Pulsed (Icm): 108 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 230 W
  • Switching Energy: 500µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 29 nC
  • Td (on/off) @ 25°C: 12ns/103ns
  • Test Condition: 400V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: -
Request a Quote
650 V
58 A
108 A
2.1V @ 15V, 20A
230 W
500µJ (on), 450µJ (off)
Standard
29 nC
12ns/103ns
400V, 20A, 20Ohm, 15V
25 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IXYK300N65A3
IXYS

DISC IGBT XPT-GENX3 TO-264(3)

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 600 A
  • Current - Collector Pulsed (Icm): 1460 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
  • Power - Max: 2300 W
  • Switching Energy: 7.8mJ (on), 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 565 nC
  • Td (on/off) @ 25°C: 42ns/190ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 125 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: PLUS264™
封裝: -
Request a Quote
650 V
600 A
1460 A
1.6V @ 15V, 100A
2300 W
7.8mJ (on), 4.7mJ (off)
Standard
565 nC
42ns/190ns
400V, 100A, 1Ohm, 15V
125 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
PLUS264™
IXXH140N65C4
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 320 A
  • Current - Collector Pulsed (Icm): 730 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
  • Power - Max: 1200 W
  • Switching Energy: 4.9mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 400V, 75A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封裝: -
Request a Quote
650 V
320 A
730 A
2.3V @ 15V, 120A
1200 W
4.9mJ (on), 1.7mJ (off)
Standard
250 nC
43ns/240ns
400V, 75A, 4.7Ohm, 15V
90 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXXH140N65B4
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 840 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
  • Power - Max: 1200 W
  • Switching Energy: 5.75mJ (on), 2.67mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 54ns/270ns
  • Test Condition: 400V, 100A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 105 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封裝: -
Request a Quote
650 V
340 A
840 A
1.9V @ 15V, 120A
1200 W
5.75mJ (on), 2.67mJ (off)
Standard
250 nC
54ns/270ns
400V, 100A, 4.7Ohm, 15V
105 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
MMIX1G320N60B3
IXYS

IGBT PT 600V 400A 24SMPD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 400 A
  • Current - Collector Pulsed (Icm): 1000 A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
  • Power - Max: 1000 W
  • Switching Energy: 2.7mJ (on), 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 585 nC
  • Td (on/off) @ 25°C: 44ns/250ns
  • Test Condition: 480V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 66 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
封裝: -
Request a Quote
600 V
400 A
1000 A
1.5V @ 15V, 100A
1000 W
2.7mJ (on), 5mJ (off)
Standard
585 nC
44ns/250ns
480V, 100A, 1Ohm, 15V
66 ns
-55°C ~ 150°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
IXGA48N60B3-TRL
IXYS

IXGA48N60B3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 280 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 300 W
  • Switching Energy: 840µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 115 nC
  • Td (on/off) @ 25°C: 22ns/130ns
  • Test Condition: 480V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封裝: -
Request a Quote
600 V
48 A
280 A
1.8V @ 15V, 32A
300 W
840µJ (on), 660µJ (off)
Standard
115 nC
22ns/130ns
480V, 30A, 5Ohm, 15V
25 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXGK120N60B3
IXYS

DISC IGBT PT-MID FREQUENCY TO-26

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 280 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
  • Power - Max: 780 W
  • Switching Energy: 2.9mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 465 nC
  • Td (on/off) @ 25°C: 40ns/227ns
  • Test Condition: 480V, 100A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 87 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封裝: -
Request a Quote
600 V
280 A
600 A
1.8V @ 15V, 100A
780 W
2.9mJ (on), 3.5mJ (off)
Standard
465 nC
40ns/227ns
480V, 100A, 2Ohm, 15V
87 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)