頁 34 - IXYS 產品 - 電晶體 - FET、MOSFET - 單

IXFN120N65X2

IXYS

MOSFET N-CH 650V 108A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 54A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存3,776

MOSFET (Metal Oxide)

650V

108A (Tc)

10V

5.5V @ 8mA

225nC @ 10V

15500pF @ 25V

±30V

-

890W (Tc)

24 mOhm @ 54A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227

SOT-227-4, miniBLOC

IXFK24N100F

IXYS

MOSFET N-CH 1KV 24A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXFK)
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存4,928

MOSFET (Metal Oxide)

1000V

24A (Tc)

10V

5.5V @ 8mA

195nC @ 10V

6600pF @ 25V

±20V

-

560W (Tc)

390 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264 (IXFK)

TO-264-3, TO-264AA

IXFX24N100F

IXYS

MOSFET N-CH 1KV 24A PLUS247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存3,936

MOSFET (Metal Oxide)

1000V

24A (Tc)

10V

5.5V @ 8mA

195nC @ 10V

6600pF @ 25V

±20V

-

560W (Tc)

390 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFZ140N25T

IXYS

MOSFET N-CH 250V 100A DE475

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 445W (Tc)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DE475
Package / Case: DE475

封裝: DE475

庫存4,672

MOSFET (Metal Oxide)

250V

100A (Tc)

10V

5V @ 4mA

255nC @ 10V

19000pF @ 25V

±20V

-

445W (Tc)

17 mOhm @ 60A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DE475

IXFN170N25X3

IXYS

MOSFET N-CH 250V 170A SOT227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存5,120

MOSFET (Metal Oxide)

250V

170A (Tc)

10V

4.5V @ 4mA

190nC @ 10V

13500pF @ 25V

±20V

-

390W (Tc)

7.4 mOhm @ 85A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXTN102N65X2

IXYS

MOSFET N-CH 650V 76A X2 SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 76A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存4,848

MOSFET (Metal Oxide)

650V

76A

10V

5V @ 250µA

152nC @ 10V

10900pF @ 25V

±30V

-

595W (Tc)

30 mOhm @ 51A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227

SOT-227-4, miniBLOC

IXFK21N100F

IXYS

MOSFET N-CH 1KV 21A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXFK)
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存6,240

MOSFET (Metal Oxide)

1000V

21A (Tc)

10V

5.5V @ 4mA

160nC @ 10V

5500pF @ 25V

±20V

-

500W (Tc)

500 mOhm @ 10.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264 (IXFK)

TO-264-3, TO-264AA

IXFX21N100F

IXYS

MOSFET N-CH 1KV 21A PLUS247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存103,464

MOSFET (Metal Oxide)

1000V

21A (Tc)

10V

5.5V @ 4mA

160nC @ 10V

5500pF @ 25V

±20V

-

500W (Tc)

500 mOhm @ 10.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFK66N85X

IXYS

850V/66A ULTRA JUNCTION X-CLASS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存7,408

MOSFET (Metal Oxide)

850V

66A (Tc)

10V

5.5V @ 8mA

230nC @ 10V

8900pF @ 25V

±30V

-

1250W (Tc)

65 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264

TO-264-3, TO-264AA

IXTK120N65X2

IXYS

MOSFET N-CH 650V 120A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存4,976

MOSFET (Metal Oxide)

650V

120A (Tc)

10V

4.5V @ 8mA

240nC @ 10V

13600pF @ 25V

±30V

-

1250W (Tc)

24 mOhm @ 60A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264 (IXTK)

TO-264-3, TO-264AA

IXTX120N65X2

IXYS

MOSFET N-CH 650V 120A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存4,272

MOSFET (Metal Oxide)

650V

120A (Tc)

10V

4.5V @ 8mA

240nC @ 10V

13600pF @ 25V

±30V

-

1250W (Tc)

24 mOhm @ 60A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFH170N25X3

IXYS

MOSFET N-CH 250V 170A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存4,032

MOSFET (Metal Oxide)

250V

170A (Tc)

10V

4.5V @ 4mA

190nC @ 10V

13500pF @ 25V

±20V

-

960W (Tc)

7.4 mOhm @ 85A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXFH)

TO-247-3

IXTK102N65X2

IXYS

MOSFET N-CH 650V 102A X2 TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存2,100

MOSFET (Metal Oxide)

650V

102A (Tc)

10V

5V @ 250µA

152nC @ 10V

10900pF @ 25V

±30V

-

1040W (Tc)

30 mOhm @ 51A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264 (IXTK)

TO-264-3, TO-264AA

IXTX102N65X2

IXYS

MOSFET N-CH 650V 102A X2 PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存4,688

MOSFET (Metal Oxide)

650V

102A (Tc)

10V

5V @ 250µA

152nC @ 10V

10900pF @ 25V

±30V

-

1040W (Tc)

30 mOhm @ 51A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFT50N85XHV

IXYS

850V/50A ULTRA JUNCTION X-CLASS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

庫存4,448

MOSFET (Metal Oxide)

850V

50A (Tc)

10V

5.5V @ 4mA

152nC @ 10V

4480pF @ 25V

±30V

-

890W (Tc)

105 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFX100N65X2

IXYS

MOSFET N-CH 650V 100A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存7,472

MOSFET (Metal Oxide)

650V

100A (Tc)

10V

5.5V @ 4mA

180nC @ 10V

11300pF @ 25V

±30V

-

1040W (Tc)

30 mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFT40N85XHV

IXYS

MOSFET NCH 850V 40A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 860W (Tc)
Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

庫存6,128

MOSFET (Metal Oxide)

850V

40A (Tc)

10V

5.5V @ 4mA

98nC @ 10V

3700pF @ 25V

±30V

-

860W (Tc)

145 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFH40N85X

IXYS

MOSFET NCH 850V 40A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 860W (Tc)
Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,360

MOSFET (Metal Oxide)

850V

40A (Tc)

10V

5.5V @ 4mA

98nC @ 10V

3700pF @ 25V

±30V

-

860W (Tc)

145 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

IXFT30N85XHV

IXYS

MOSFET N-CH 850V 30A TO268-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268 (IXFT)
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

庫存3,824

MOSFET (Metal Oxide)

850V

30A (Tc)

10V

5.5V @ 2.5mA

68nC @ 10V

2460pF @ 25V

±30V

-

695W (Tc)

220 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268 (IXFT)

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFH6N100F

IXYS

MOSFET N-CH 1KV 6A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,592

MOSFET (Metal Oxide)

1000V

6A (Tc)

10V

5.5V @ 2.5mA

54nC @ 10V

1770pF @ 25V

±20V

-

180W (Tc)

1.9 Ohm @ 3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXFH)

TO-247-3

IXFH30N85X

IXYS

MOSFET N-CH 850V 30A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,800

MOSFET (Metal Oxide)

850V

30A (Tc)

10V

5.5V @ 2.5mA

68nC @ 10V

2460pF @ 25V

±30V

-

695W (Tc)

220 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247AD (IXFH)

TO-247-3

IXTH16N20D2

IXYS

MOSFET N-CH 200V 16A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 208nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存82,332

MOSFET (Metal Oxide)

200V

16A (Tc)

-

208nC @ 5V

5500pF @ 25V

±20V

Depletion Mode

695W (Tc)

73 mOhm @ 8A, 0V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXFJ20N85X

IXYS

MOSFET N-CH 850V 9.5A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFJ)
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,656

MOSFET (Metal Oxide)

850V

9.5A (Tc)

10V

5.5V @ 2.5mA

63nC @ 10V

1660pF @ 25V

±30V

-

110W (Tc)

360 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXFJ)

TO-247-3

IXTH62N65X2

IXYS

MOSFET N-CH 650V 62A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 52 mOhm @ 31A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存5,616

MOSFET (Metal Oxide)

650V

62A (Tc)

10V

4.5V @ 4mA

104nC @ 10V

5940pF @ 25V

±30V

-

780W (Tc)

52 mOhm @ 31A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

IXFH20N85X

IXYS

850V/20A ULTRA JUNCTION X-CLASS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,784

MOSFET (Metal Oxide)

850V

20A (Tc)

10V

5.5V @ 2.5mA

63nC @ 10V

1660pF @ 25V

±30V

-

540W (Tc)

330 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

IXFH46N65X2

IXYS

MOSFET N-CH 650V 46A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 660W (Tc)
Rds On (Max) @ Id, Vgs: 76 mOhm @ 23A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存7,728

MOSFET (Metal Oxide)

650V

46A (Tc)

10V

5.5V @ 4mA

75nC @ 10V

4810pF @ 25V

±30V

-

660W (Tc)

76 mOhm @ 23A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

IXFQ60N25X3

IXYS

MOSFET N-CH 250V 60A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封裝: TO-3P-3, SC-65-3

庫存5,440

MOSFET (Metal Oxide)

250V

60A (Tc)

10V

4.5V @ 1.5mA

50nC @ 10V

3610pF @ 25V

±20V

-

320W (Tc)

23 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXFH14N85X

IXYS

MOSFET N-CH 850V 14A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,204

MOSFET (Metal Oxide)

850V

14A (Tc)

10V

5.5V @ 1mA

30nC @ 10V

1043pF @ 25V

±30V

-

460W (Tc)

550 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247AD (IXFH)

TO-247-3