頁 3 - IXYS 產品 - 二極體 - 整流器 - 單 | 黑森爾電子
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IXYS 產品 - 二極體 - 整流器 - 單

記錄 504
頁  3/18
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DSEP6-06BS-TUB
IXYS

DIODE GEN PURP 600V 6A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 5pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
6A
2.66 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
15 ns
50 µA @ 600 V
5pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSEP60-12B
IXYS

DIODE GEN PURP 1.2KV 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 30pF @ 600V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存90
1200 V
60A
3.25 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
65 ns
200 µA @ 1200 V
30pF @ 600V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
DSEP60-12AZ-TUB
IXYS

DIODE GEN PURP 1.2KV 60A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
  • Capacitance @ Vr, F: 30pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA (D3Pak-HV)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
60A
2.66 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
650 µA @ 1200 V
30pF @ 600V, 1MHz
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA (D3Pak-HV)
-55°C ~ 175°C
DCG20C1200HR
IXYS

DIODE SIC 1.2KV 12.5A ISO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: 755pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
1200 V
12.5A
1.8 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 1200 V
755pF @ 0V, 1MHz
Through Hole
TO-247-3
ISO247
-40°C ~ 150°C
W2840QA220
IXYS

DIODE GEN PURP 2.2KV 2840A W117

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 2840A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W117
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
2200 V
2840A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Clamp On
DO-200AB, B-PUK
W117
-
W1975MC650
IXYS

DIODE GEN PURP 6.5KV 1975A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io): 1975A
  • Voltage - Forward (Vf) (Max) @ If: 3.95 V @ 4200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
6500 V
1975A
3.95 V @ 4200 A
Standard Recovery >500ns, > 200mA (Io)
45 µs
100 mA @ 6500 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 150°C
W1975MC680
IXYS

DIODE GEN PURP 6.8KV 1975A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6800 V
  • Current - Average Rectified (Io): 1975A
  • Voltage - Forward (Vf) (Max) @ If: 3.95 V @ 4200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
6800 V
1975A
3.95 V @ 4200 A
Standard Recovery >500ns, > 200mA (Io)
45 µs
100 mA @ 6800 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 150°C
DPG30I600PM
IXYS

DIODE GP 600V 15A TO220ACFP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: 26pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
15A
2.52 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
250 µA @ 600 V
26pF @ 400V, 1MHz
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220ACFP
-55°C ~ 175°C
W6262ZC240
IXYS

DIODE GEN PURP 2.4KV 6262A W7

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 6262A
  • Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W7
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
2400 V
6262A
1.18 V @ 6800 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2400 V
-
Chassis Mount
DO-200AE
W7
-40°C ~ 175°C
DSEI12-12AZ-TRL
IXYS

DIODE GEN PURP 1.2KV 11A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: 6pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
1200 V
11A
2.6 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
250 µA @ 1200 V
6pF @ 600V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-40°C ~ 150°C
W6262ZC200
IXYS

DIODE GEN PURP 2KV 6262A W7

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 6262A
  • Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W7
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
2000 V
6262A
1.18 V @ 6800 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2000 V
-
Chassis Mount
DO-200AE
W7
-40°C ~ 175°C
DSEI12-12AZ-TUB
IXYS

DIODE GEN PURP 1.2KV 11A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: 6pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
庫存138
1200 V
11A
2.6 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
250 µA @ 1200 V
6pF @ 600V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-40°C ~ 150°C
DHG10IM1800UZ-TUB
IXYS

DIODE GEN PURP 1.8KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.27 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 260 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
  • Capacitance @ Vr, F: 3pF @ 200V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1800 V
10A
2.27 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
260 ns
50 µA @ 1800 V
3pF @ 200V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DHG10IM1800UZ-TRL
IXYS

DIODE GEN PURP 1.8KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.27 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 260 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
  • Capacitance @ Vr, F: 3pF @ 200V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1800 V
10A
2.27 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
260 ns
50 µA @ 1800 V
3pF @ 200V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
W0944WC150
IXYS

DIODE GEN PURP 1.5KV 944A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500 V
  • Current - Average Rectified (Io): 944A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 mA @ 1500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 190°C
封裝: -
Request a Quote
1500 V
944A
1.45 V @ 1930 A
Standard Recovery >500ns, > 200mA (Io)
-
15 mA @ 1500 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 190°C
W0944WC120
IXYS

DIODE GEN PURP 1.2KV 944A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 944A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 190°C
封裝: -
Request a Quote
1200 V
944A
1.45 V @ 1930 A
Standard Recovery >500ns, > 200mA (Io)
-
15 mA @ 1200 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 190°C
DMA30IM1600PZ-TRL
IXYS

DIODE GEN PURP 1.6KV 30A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1600 V
30A
1.29 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DMA30IM1600PZ-TUB
IXYS

DIODE GEN PURP 1.6KV 30A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1600 V
30A
1.29 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DMA80IM1600HB
IXYS

DIODE GEN PURP 1.6KV 80A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 43pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存102
1600 V
80A
1.17 V @ 80 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
43pF @ 400V, 1MHz
Through Hole
TO-247-3
TO-247 (IXTH)
-55°C ~ 150°C
DPF10I600APA
IXYS

PWR DIODE DISC-FRED TO-220AB / T

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DSEP30-12B
IXYS

DIODE GEN PURP 1.2KV 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 12pF @ 600V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存45
1200 V
30A
3.75 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1200 V
12pF @ 600V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
DMA50I1600HA
IXYS

DIODE GEN PURP 1.6KV 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 19pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1600 V
50A
1.3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
19pF @ 400V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
M1494NC250
IXYS

DIODE GEN PURP 2.5KV 1494A W5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 1494A
  • Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.9 µs
  • Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W5
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: -
Request a Quote
2500 V
1494A
2.34 V @ 4500 A
Standard Recovery >500ns, > 200mA (Io)
3.9 µs
85 mA @ 2500 V
-
Clamp On
DO-200AC, K-PUK
W5
-40°C ~ 125°C
DSEP15-06BS-TRL
IXYS

DIODE GEN PURP 600V 15A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
15A
2.54 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
100 µA @ 600 V
12pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
DSEP15-06BS-TUB
IXYS

DIODE GEN PURP 600V 15A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
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600 V
15A
2.54 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
100 µA @ 600 V
12pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
DSP45-16AZ-TUB
IXYS

DIODE GEN PURP 1.6KV 45A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 19pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA (D3Pak-HV)
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存90
1600 V
45A
1.26 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
19pF @ 400V, 1MHz
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA (D3Pak-HV)
-40°C ~ 175°C
W2899MC480
IXYS

DIODE GEN PURP 4.8KV 2899A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4800 V
  • Current - Average Rectified (Io): 2899A
  • Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 48 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
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4800 V
2899A
2.9 V @ 8600 A
Standard Recovery >500ns, > 200mA (Io)
48 µs
50 mA @ 4800 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
M0955LC200
IXYS

DIODE GEN PURP 2KV 955A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 955A
  • Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1900 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.4 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
封裝: -
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2000 V
955A
2.07 V @ 1900 A
Standard Recovery >500ns, > 200mA (Io)
3.4 µs
50 mA @ 2000 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 125°C