ISSI, Integrated Silicon Solution Inc 產品

IS49NLC36800-33B

ISSI, Integrated Silicon Solution Inc

IC DRAM 288MBIT 300MHZ 144BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 288Mb (8M x 36)
• Memory Interface: Parallel
• Clock Frequency: 300MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FCBGA (11x18.5)

封裝: 144-TFBGA

IS45S16800E-7BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x8)

封裝: 54-TFBGA

IS42S32400E-7BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 90FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS61LF51236A-6.5B2I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 6.5NS 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.5ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BBGA
• Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BBGA

IS61NVP51236-200B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 165BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.1ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LFBGA
• Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-LFBGA

IS42S32400B-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 90FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS42S16160B-7TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

IS42S16160B-7TI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

IS42S32160D-6BI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS61NLF51218A-7.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 117MHZ 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (512K x 18)
• Memory Interface: Parallel
• Clock Frequency: 117MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

IS61NLP25618A-200TQI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 4.5Mb (256K x 18)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.1ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

IS43LR32200C-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile DDR
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS64C6416AL-15TLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 15NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 15ns
• Access Time: 15ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

IS42S16160G-6TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

IS62WV6416BLL-55TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 55NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

IS31AP4915-QFLS2-TR

ISSI, Integrated Silicon Solution Inc

IC AMP SPEAKER DRIVER 16QFN

• Type: Class G
• Output Type: 1-Channel (Mono)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 2.5 V ~ 6.5 V
• Features: Depop, Shutdown, Thermal Protection
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Supplier Device Package: 16-QFN (4x4)
• Package / Case: 16-WQFN Exposed Pad

封裝: 16-WQFN Exposed Pad

IS62WV102416FBLL-45BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48MGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45ns
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (6x8)

封裝: 48-VFBGA

IS46DR81280B-25DBLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

IS61VPD51236A-200B3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165PBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Quad Port, Synchronous
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.1ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-PBGA (13x15)

封裝: 165-TBGA

IS43QR81024A-075VBL

ISSI, Integrated Silicon Solution Inc

8G, 1.2V, DDR4, 1Mx8, 2666MT/s @

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.333 GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 18 ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-TWBGA (10x14)

封裝: -

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IS25LP128F-JLLA3

ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/QUAD 8WSON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mbit
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 800µs
• Access Time: -
• Voltage - Supply: 2.3V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (8x6)

封裝: -

IS25WP064A-RMLE-TY

ISSI, Integrated Silicon Solution Inc

IC FLASH 64MBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: 40µs, 800µs
• Access Time: 7 ns
• Voltage - Supply: 1.65V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

封裝: -

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IS46LD32640B-25BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2-S4
• Memory Size: 2Gbit
• Memory Interface: HSUL_12
• Clock Frequency: 400 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.5 ns
• Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 134-TFBGA
• Supplier Device Package: 134-TFBGA (10x11.5)

封裝: -

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IS62WV25616EALL-55BI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 48VFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55 ns
• Voltage - Supply: 1.65V ~ 2.2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (6x8)

封裝: -

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IS61WV25616FALL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

4Mb,High-Speed/Low Power,Async,2

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10 ns
• Voltage - Supply: 1.65V ~ 2.2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (6x8)

封裝: -

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IS62WV25616EBLL-45B2LI-TR

ISSI, Integrated Silicon Solution Inc

4Mb, Low Power/Power Saver,Async

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (6x8)

封裝: -

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IS43TR16256B-093NBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 96TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 4Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.066 GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.425V ~ 1.575V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

封裝: -

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IS42S32200N-6BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PARALLEL 90TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mbit
• Memory Interface: LVTTL
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4 ns
• Voltage - Supply: 3V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: -

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