頁 79 - ISSI, Integrated Silicon Solution Inc 產品 - 記憶體

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS43LD16128B-18BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存2,032	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (128M x 16)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS61WV102416DALL-10BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48MGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (9x11)	封裝: 48-TFBGA	庫存6,592	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (9x11)
IS61WV51216EEBLL-10T2LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 48TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存3,392	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS21ES04G-JCLI-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 32G EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 32Gb (4G x 8) Memory Interface: eMMC Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封裝: 153-VFBGA	庫存5,712	FLASH	FLASH - NAND (MLC)	32Gb (4G x 8)	eMMC	200MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
IS42SM16320E-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封裝: 54-TFBGA	庫存2,656	DRAM	SDRAM - Mobile	512Mb (32M x 16)	Parallel	133MHz	-	6ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS43LD32640B-25BPLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封裝: 168-VFBGA	庫存4,608	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS43LD32640B-18BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存7,504	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS61WV102416FBLL-8TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存5,248	SRAM	SRAM - Dual Port, Asynchronous	16Mb (1M x 16)	Parallel	-	8ns	8ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS61WV102416FBLL-10T2LI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 54TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存3,760	SRAM	SRAM - Dual Port, Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS61WV102416DALL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存7,808	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS43LD32640B-18BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存4,720	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS43LD32640B-25BPL	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封裝: 168-VFBGA	庫存2,368	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS61WV102416DBLL-10BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封裝: 48-TFBGA	庫存5,760	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS43LD32320C-18BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存5,888	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS43LD16128B-18BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存5,648	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (128M x 16)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46R16320E-6BLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (13x8)	封裝: 60-TFBGA	庫存7,744	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 105°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (13x8)
IS61WV51216EDALL-20TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存4,992	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	20ns	20ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS43LD16128B-25BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存5,760	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (128M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS61WV51216EDALL-20BLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 48MGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封裝: 48-TFBGA	庫存7,504	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	20ns	20ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS43TR16256A-107MBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存4,720	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	933MHz	15ns	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS61WV102416FBLL-10BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48MGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	封裝: 48-TFBGA	庫存3,808	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS43LD16640C-18BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存4,352	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (64M x 16)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS43LD32640B-25BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存6,928	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS43LD32640B-18BPL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封裝: 168-VFBGA	庫存7,904	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS62WV102416GALL-55TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存5,472	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	55ns	55ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS43LD32640B-25BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	封裝: 134-TFBGA	庫存5,296	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS61WV102416FBLL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存2,000	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS61WV102416DBLL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存3,280	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I

IS43LD16128B-18BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存2,032

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (128M x 16)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS61WV102416DALL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48MGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (9x11)

封裝: 48-TFBGA

庫存6,592

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (9x11)

IS61WV51216EEBLL-10T2LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存3,392

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS21ES04G-JCLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 32G EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 32Gb (4G x 8)
Memory Interface: eMMC
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封裝: 153-VFBGA

庫存5,712

FLASH

FLASH - NAND (MLC)

32Gb (4G x 8)

eMMC

200MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

IS42SM16320E-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封裝: 54-TFBGA

庫存2,656

DRAM

SDRAM - Mobile

512Mb (32M x 16)

Parallel

133MHz

-

6ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS43LD32640B-25BPLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封裝: 168-VFBGA

庫存4,608

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS43LD32640B-18BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存7,504

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS61WV102416FBLL-8TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存5,248

SRAM

SRAM - Dual Port, Asynchronous

16Mb (1M x 16)

Parallel

-

8ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS61WV102416FBLL-10T2LI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 54TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存3,760

SRAM

SRAM - Dual Port, Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS61WV102416DALL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存7,808

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS43LD32640B-18BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存4,720

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS43LD32640B-25BPL

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封裝: 168-VFBGA

庫存2,368

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS61WV102416DBLL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封裝: 48-TFBGA

庫存5,760

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS43LD32320C-18BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存5,888

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS43LD16128B-18BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存5,648

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (128M x 16)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46R16320E-6BLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (13x8)

封裝: 60-TFBGA

庫存7,744

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 105°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (13x8)

IS61WV51216EDALL-20TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存4,992

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

20ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS43LD16128B-25BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存5,760

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (128M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS61WV51216EDALL-20BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48MGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封裝: 48-TFBGA

庫存7,504

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

20ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS43TR16256A-107MBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存4,720

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

933MHz

15ns

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS61WV102416FBLL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48MGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

封裝: 48-TFBGA

庫存3,808

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS43LD16640C-18BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存4,352

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (64M x 16)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS43LD32640B-25BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存6,928

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS43LD32640B-18BPL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封裝: 168-VFBGA

庫存7,904

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS62WV102416GALL-55TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存5,472

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

55ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS43LD32640B-25BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

封裝: 134-TFBGA

庫存5,296

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS61WV102416FBLL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存2,000

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS61WV102416DBLL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存3,280

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I