Infineon Technologies 產品

SGP04N60XKSA1

Infineon Technologies

IGBT 600V 9.4A 50W TO220-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9.4A
• Current - Collector Pulsed (Icm): 19A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
• Power - Max: 50W
• Switching Energy: 131µJ
• Input Type: Standard
• Gate Charge: 24nC
• Td (on/off) @ 25°C: 22ns/237ns
• Test Condition: 400V, 4A, 67 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

封裝: TO-220-3

SPB42N03S2L-13 G

Infineon Technologies

MOSFET N-CH 30V 42A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 37µA
• Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUZ31

Infineon Technologies

MOSFET N-CH 200V 14.5A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 95W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封裝: TO-220-3

IRFR3707

Infineon Technologies

MOSFET N-CH 30V 61A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRF7737L2TR

Infineon Technologies

MOSFET N-CH 40V 315A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5469pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 94A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET L6
• Package / Case: DirectFET? Isometric L6

封裝: DirectFET? Isometric L6

IRF7406PBF

Infineon Technologies

MOSFET P-CH 30V 5.8A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

SPP06N80C3

Infineon Technologies

MOSFET N-CH 800V 6A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封裝: TO-220-3

IPP60R950C6

Infineon Technologies

MOSFET N-CH 600V 4.4A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封裝: TO-220-3

PTFA180701FV4FWSA1

Infineon Technologies

IC FET RF LDMOS 70W H-37265-2

• Transistor Type: LDMOS
• Frequency: 1.84GHz
• Gain: 16.5dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 550mA
• Power - Output: 60W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37265-2

封裝: 2-Flatpack, Fin Leads, Flanged

IPG20N10S4L22ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
• Power - Max: 60W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

封裝: 8-PowerVDFN

BCR 153T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 2.2k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

封裝: SC-75, SOT-416

BCR521E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 0.33W SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 1k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

IRU3021MCW

Infineon Technologies

IC CTRL/REG SYNC BUCK 28-SOIC

• Applications: Controller, Intel Processor
• Voltage - Input: 5V, 12V
• Number of Outputs: 4
• Voltage - Output: 1.3 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.295", 7.50mm Width)

IR2133STR

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 90ns, 40ns
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.295", 7.50mm Width)

IR2235PBF

Infineon Technologies

IC DRIVER 3-PHASE BRIDGE 28-DIP

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 90ns, 40ns
• Operating Temperature: 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 28-DIP (0.600", 15.24mm)
• Supplier Device Package: 28-DIP

封裝: 28-DIP (0.600", 15.24mm)

ADM6995LAAT1

Infineon Technologies

IC SWITCH CNTRLR 10/100 128QFP

• Protocol: -
• Function: -
• Interface: -
• Standards: -
• Voltage - Supply: 3.135 V ~ 3.465 V
• Current - Supply: -
• Operating Temperature: 0°C ~ 115°C
• Package / Case: 128-BFQFP
• Supplier Device Package: PG-BFQFP-128

封裝: 128-BFQFP

XC2365A104F80LRABKXUMA1

Infineon Technologies

IC MCU 16BIT 832KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 832KB (832K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 50K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

封裝: 100-LQFP Exposed Pad

BGA616 BOARD

Infineon Technologies

BOARD APPL POPULATED BGA616

• Type: Amplifier
• Frequency: 0Hz ~ 2.7GHz
• For Use With/Related Products: BGA616
• Supplied Contents: Board

封裝: -

TLE6220GPAUMA2

Infineon Technologies

IC SW SMART QUAD LOSIDE DSO-20

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 4.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): 3A
• Rds On (Typ): 320 mOhm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-20-37

封裝: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

FP15R12W1T4B3BOMA1

Infineon Technologies

IGBT MOD 1200V 28A 130W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 28 A
• Power - Max: 130 W
• Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

FF600R12IS4F

Infineon Technologies

IGBT MOD 1200V 600A 3700W

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 600 A
• Power - Max: 3700 W
• Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

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PBM99010-23QSAP1A

Infineon Technologies

INFINEON PBM99010/23QS - SSO28-5

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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FF45MR12W1M1PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1BM

封裝: -

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ISC0604NLSATMA1

Infineon Technologies

TRENCH 40<-<100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 166A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 103µA
• Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封裝: -

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CY8C4148AZI-S598

Infineon Technologies

IC MCU 32BIT 256KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 84
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封裝: -

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CY8C6337BZI-BLF13T

Infineon Technologies

IC MCU 32BIT 1MB FLASH 116BGA

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 78
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 288K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 116-WFBGA
• Supplier Device Package: 116-BGA (5.2x6.4)

封裝: -

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FP100R12N3T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3B-711

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

CYT2B73BADQ0AZSGS

Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 64LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 49
• Program Memory Size: 1.0625MB (1.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 96K x 8
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 45x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封裝: -