Infineon Technologies 產品

BSS670S2L

Infineon Technologies

MOSFET N-CH 55V 540MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 2.7µA
• Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

IRFU9N20D

Infineon Technologies

MOSFET N-CH 200V 9.4A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

AUIRLL014NTR

Infineon Technologies

MOSFET N-CH 55V 2A SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

封裝: TO-261-4, TO-261AA

BSC017N04NS G

Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 85µA
• Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

BSP135H6327XTSA1

Infineon Technologies

MOSFET N-CH 600V 120MA SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1V @ 94µA
• Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223-4
• Package / Case: TO-261-4, TO-261AA

封裝: TO-261-4, TO-261AA

BFT92E6327

Infineon Technologies

TRANS PNP RF 15V SOT-23

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
• Gain: 8dB ~ 13.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15mA, 8V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

TLE8880TN2AKSA1

Infineon Technologies

IC ALTERNATOR REGULATOR 5TO220

• Applications: Converter, Automotive Engine Control
• Voltage - Input: 6 V ~ 18 V
• Number of Outputs: 1
• Voltage - Output: 10.6 V ~ 16 V
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-5
• Supplier Device Package: PG-TO220-5

封裝: TO-220-5

IR2170

Infineon Technologies

IC CURRENT SENSE 600V 1MA 8-DIP

• Function: Current Sense
• Sensing Method: -
• Accuracy: -
• Voltage - Input: 9.5 V ~ 20 V
• Current - Output: 1mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

IFX1050G VIO

Infineon Technologies

IC TXRX CAN HS 8DSO

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: Full
• Receiver Hysteresis: 150mV
• Data Rate: 1MBd
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

XE164FM72F80LAAKXUMA1

Infineon Technologies

IC MCU 16BIT 576KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 76
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 50K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

封裝: 100-LQFP Exposed Pad

TLV49613MXTSA1

Infineon Technologies

MAGNETIC SWITCH LATCH SOT23-3

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 7.5mT Trip, -7.5mT Release
• Test Condition: 25°C
• Voltage - Supply: 3 V ~ 26 V
• Current - Supply (Max): 2.5mA
• Current - Output (Max): 25mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: SOT-223-3
• Supplier Device Package: PG-SOT23-3-15

封裝: SOT-223-3

BSC0805LSATMA1

Infineon Technologies

MOSFET N-CH 100V 79A TDSON-8-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 49µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-6
• Package / Case: 8-PowerTDFN

封裝: -

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IAUC70N08S5N074ATMA1

Infineon Technologies

MOSFET N-CH 80V 70A 8TDSON-33

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 36µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-33
• Package / Case: 8-PowerTDFN

封裝: -

40060212-002

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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CY9BF122MPMC-GNE2

Infineon Technologies

IC MCU 32BIT 160KB FLASH 80LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 60
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 26x12b SAR; D/A 2x10b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

封裝: -

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IFF2400P17AE4BPSA1

Infineon Technologies

IGBT MODULE 1700V IPM MIPAQP-4

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 65°C (TA)
• Mounting Type: -
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

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CY7C65223D-32LTXIT

Infineon Technologies

USB Full-Speed Peripherals

• Protocol: USB
• Function: Controller
• Interface: I2C, SPI, UART
• Standards: USB 2.0
• Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
• Current - Supply: 18mA
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-QFN (5x5)

封裝: -

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BSO612CVGXUMA1

Infineon Technologies

MOSFET N/P-CH 8-SOIC

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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ISC110N12NM6ATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 3.6V @ 35µA
• Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 94W (Tc)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SuperSO8
• Package / Case: 8-PowerTDFN

封裝: -

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CY8C4127LQSS445XQSA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-UFQFN Exposed Pad
• Supplier Device Package: 56-QFN (7x7)

封裝: -

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TLE9891QTA61XUMA1

Infineon Technologies

EMBEDDED POWER

• Applications: BLDC Controller
• Core Processor: ARM® Cortex®-M3
• Program Memory Type: EEPROM (8kB), FLASH (144kB)
• Controller Series: TLE989x
• RAM Size: 16K x 8
• Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
• Number of I/O: 8
• Voltage - Supply: 5.5V ~ 28V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-TQFP Exposed Pad
• Supplier Device Package: PG-TQFP-48-10

封裝: -

S25HS512TDPMHV010

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

封裝: -

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T4771N28TOFXPSA1

Infineon Technologies

SCR MODULE 2900V 6820A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.9 kV
• Current - On State (It (AV)) (Max): 6110 A
• Current - On State (It (RMS)) (Max): 6820 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 350 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 100000A @ 50Hz
• Current - Hold (Ih) (Max): 350 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF

封裝: -

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P770020CF5C000

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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CY8C4025LQA-S411

Infineon Technologies

IC MCU 32BIT 32KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit Single-Core
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 19
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b; D/A 1x7/8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封裝: -

IPT65R040CFD7XTMA1

Infineon Technologies

MOSFET N-CH 650V 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: TOLL
• Package / Case: 8-PowerSFN

封裝: -

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2EDL8023GXUMA1

Infineon Technologies

INT. POWERSTAGE/DRIVER

• Driven Configuration: High-Side and Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 8V ~ 17V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 3A, 3A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 90 V
• Rise / Fall Time (Typ): 45ns, 45ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: PG-VDSON-8-4

封裝: -

CG7297AM

Infineon Technologies

IC MCU CAPSENSE 32QFN

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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