頁 186 - Infineon Technologies 產品 | 黑森爾電子
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Infineon Technologies 產品

記錄 16,988
頁  186/607
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IKD10N60RAATMA2
Infineon Technologies

IGBT 600V 20A 150W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,912
BSP135L6433HTMA1
Infineon Technologies

MOSFET N-CH 600V 120MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存6,512
IRLU3705Z
Infineon Technologies

MOSFET N-CH 55V 42A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存3,168
IRF3314STRR
Infineon Technologies

MOSFET N-CH 150V D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,600
IRFBA1404
Infineon Technologies

MOSFET N-CH 40V 206A SUPER-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 206A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 95A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-220? (TO-273AA)
  • Package / Case: Super-220?-3 (Straight Leads)
封裝: Super-220?-3 (Straight Leads)
庫存6,864
IRFR4105TRL
Infineon Technologies

MOSFET N-CH 55V 27A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,496
IRF7748L1TRPBF
Infineon Technologies

MOSFET N-CH 60V 28A DIRECTFETL6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 148A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 89A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET L6
  • Package / Case: DirectFET? Isometric L6
封裝: DirectFET? Isometric L6
庫存5,152
hot IRF7832PBF
Infineon Technologies

MOSFET N-CH 30V 20A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.32V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存17,844
BSO033N03MSGXUMA1
Infineon Technologies

MOSFET N-CH 30V 17A 8DSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,240
hot IRF9310PBF
Infineon Technologies

MOSFET P-CH 30V 20A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存150,024
BCR 48PN H6727
Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 70mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k, 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 100MHz, 200MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
封裝: 6-VSSOP, SC-88, SOT-363
庫存3,488
BBY5805WE6327BTSA1
Infineon Technologies

DIODE TUNING HIGH Q CC SOT-323

  • Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
  • Capacitance Ratio: 3.5
  • Capacitance Ratio Condition: C1/C4
  • Voltage - Peak Reverse (Max): 10V
  • Diode Type: 1 Pair Common Cathode
  • Q @ Vr, F: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存2,464
hot IR2156SPBF
Infineon Technologies

IC CTRLR BALLAST 600V .5A 14SOIC

  • Type: Ballast Controller
  • Frequency: 36kHz ~ 44kHz
  • Voltage - Supply: 10.5 V ~ 16.5 V
  • Current - Supply: 10mA
  • Current - Output Source/Sink: -
  • Dimming: No
  • Operating Temperature: -25°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
封裝: 14-SOIC (0.154", 3.90mm Width)
庫存68,496
BCR401WH6327XTSA1
Infineon Technologies

IC LED DRIVER LIN 60MA SOT343-4

  • Type: Linear
  • Topology: -
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): 1.2V
  • Voltage - Supply (Max): 18V
  • Voltage - Output: 18V
  • Current - Output / Channel: 60mA
  • Frequency: -
  • Dimming: -
  • Applications: Lighting
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封裝: SC-82A, SOT-343
庫存28,632
IRS21271PBF
Infineon Technologies

IC DVR CURR SENSE 1CH 600V 8DIP

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
封裝: 8-DIP (0.300", 7.62mm)
庫存4,144
IRSM005-800MH
Infineon Technologies

IC GATE DRIVER 40V QFN

  • Output Configuration: Half Bridge
  • Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
  • Interface: Logic
  • Load Type: Inductive, Capacitive
  • Technology: Power MOSFET
  • Rds On (Typ): 2.7 mOhm
  • Current - Output / Channel: 80A
  • Current - Peak Output: -
  • Voltage - Supply: 10 V ~ 20 V
  • Voltage - Load: 40V (Max)
  • Operating Temperature: 150°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 27-PowerVQFN
  • Supplier Device Package: 27-PQFN (7x8)
封裝: 27-PowerVQFN
庫存19,716
hot ICE2BS01
Infineon Technologies

IC OFFLINE CTRLR SMPS CM 8DIP

  • Output Isolation: Isolated
  • Internal Switch(s): No
  • Voltage - Breakdown: -
  • Topology: Flyback
  • Voltage - Start Up: 13.5V
  • Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
  • Duty Cycle: 72%
  • Frequency - Switching: 67kHz
  • Power (Watts): -
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
  • Control Features: Soft Start
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: P-DIP-8
  • Mounting Type: Through Hole
封裝: 8-DIP (0.300", 7.62mm)
庫存473,076
hot TLE6250PG
Infineon Technologies

IC TXRX CAN STD HI SPEED 8DSO

  • Type: Transceiver
  • Protocol: CAN
  • Number of Drivers/Receivers: 1/1
  • Duplex: Full
  • Receiver Hysteresis: 150mV
  • Data Rate: 1MBd
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 160°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存504,660
SAK-XC888LM-8FFA 5V AC
Infineon Technologies

IC MCU 8BIT 32KB FLASH 64TQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: LIN, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 48
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1.75K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封裝: 64-LQFP
庫存2,448
XMC1302T016X0008AAXUMA1
Infineon Technologies

IC MCU 32BIT 8KB FLASH 16TSSOP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 32MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 11
  • Program Memory Size: 8KB (8K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 11x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: PG-TSSOP-16-8
封裝: 16-TSSOP (0.173", 4.40mm Width)
庫存3,584
TLE49452LHALA1
Infineon Technologies

MAGNETIC SWITCH BIPOLAR 3SSO

  • Function: Bipolar Switch
  • Technology: Hall Effect
  • Polarization: North Pole, South Pole
  • Sensing Range: ±3mT Trip, ±6mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 3.8 V ~ 24 V
  • Current - Supply (Max): 8mA
  • Current - Output (Max): 100mA
  • Output Type: Open Collector
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 150°C
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存8,334
PMA7110XUMA1
Infineon Technologies

IC RF TXRX+MCU ISM<1GHZ 38-TFSOP

  • Type: TxRx + MCU
  • RF Family/Standard: General ISM < 1GHz
  • Protocol: -
  • Modulation: ASK, FSK
  • Frequency: 315MHz, 434MHz, 868MHz, 915MHz
  • Data Rate (Max): 32kbps
  • Power - Output: 10dBm
  • Sensitivity: -
  • Memory Size: 6kB Flash, 12kB ROM, 256B RAM
  • Serial Interfaces: I2C, SPI
  • GPIO: 10
  • Voltage - Supply: 1.9 V ~ 3.6 V
  • Current - Receiving: -
  • Current - Transmitting: 8.9mA ~ 17.1mA
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 38-TFSOP (0.173", 4.40mm Width)
封裝: 38-TFSOP (0.173", 4.40mm Width)
庫存2,322
BGS12PN10E6327XTSA1
Infineon Technologies

CMOS SWITCH

  • Frequency - Lower: 500MHz
  • Frequency - Upper: 6GHz
  • Isolation @ Frequency: 20dB @ 6GHz (typ)
  • Insertion Loss @ Frequency: 0.6dB @ 6GHz
  • IIP3: -
  • Topology: -
  • Circuit: SPDT
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • RF Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,232
TDA5235XUMA1
Infineon Technologies

IC RCVR ASK/FSK MULTI QD 28TSSOP

  • Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
  • Sensitivity: -117dBm
  • Data Rate (Max): 112 kcps
  • Modulation or Protocol: ASK, FSK
  • Applications: RKE, TPM, Security Systems
  • Current - Receiving: 15mA
  • Data Interface: PCB, Surface Mount
  • Memory Size: -
  • Antenna Connector: PCB, Surface Mount
  • Features: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: PG-TSSOP-28
封裝: 28-TSSOP (0.173", 4.40mm Width)
庫存5,490
MB91F469GBPB-GS-K6E1
Infineon Technologies

IC MCU 32BIT 2MB FLASH 320BBGA

  • Core Processor: FR60 RISC
  • Core Size: 32-Bit
  • Speed: 100MHz
  • Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
  • Peripherals: DMA, LVD, WDT
  • Number of I/O: 205
  • Program Memory Size: 2.0625MB (2.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 96K x 8
  • Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
  • Data Converters: A/D 40x10b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 320-BBGA
  • Supplier Device Package: 320-PBGA (27x27)
封裝: -
Request a Quote
CY15V102QN-50PZXI
Infineon Technologies

IC FRAM 2MBIT SPI 50MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mbit
  • Memory Interface: SPI
  • Clock Frequency: 50 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8 ns
  • Voltage - Supply: 1.71V ~ 1.89V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封裝: -
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FF1200R12IE5PBPSA1
Infineon Technologies

IGBT MOD 1200V 2400A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 2400 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 65.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封裝: -
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PEF2035NV4-1-ACFA
Infineon Technologies

ADVANCED CMOS FRAME ALIGNER ACFA

  • PLL: -
  • Main Purpose: -
  • Input: -
  • Output: -
  • Number of Circuits: -
  • Ratio - Input:Output: -
  • Differential - Input:Output: -
  • Frequency - Max: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote