頁 74 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單 | 黑森爾電子
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Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

記錄 8,381
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRLML5103TRPBF
Infineon Technologies

MOSFET P-CH 30V 760MA SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存10,369,716
MOSFET (Metal Oxide)
30V
760mA (Ta)
4.5V, 10V
1V @ 250µA
5.1nC @ 10V
75pF @ 25V
±20V
-
540mW (Ta)
600 mOhm @ 600mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRLML6302TRPBF
Infineon Technologies

MOSFET P-CH 20V 780MA SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.45V
  • Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存10,860,804
MOSFET (Metal Oxide)
20V
780mA (Ta)
2.7V, 4.5V
1.5V @ 250µA
3.6nC @ 4.45V
97pF @ 15V
±12V
-
540mW (Ta)
600 mOhm @ 610mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot BSS169H6327XTSA1
Infineon Technologies

MOSFET N-CH 100V 170MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V
  • Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存300,600
MOSFET (Metal Oxide)
100V
170mA (Ta)
0V, 10V
1.8V @ 50µA
2.8nC @ 7V
68pF @ 25V
±20V
Depletion Mode
360mW (Ta)
6 Ohm @ 170mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3
hot IRLML5203TRPBF
Infineon Technologies

MOSFET P-CH 30V 3A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存14,381,352
MOSFET (Metal Oxide)
30V
3A (Ta)
4.5V, 10V
2.5V @ 250µA
14nC @ 10V
510pF @ 25V
±20V
-
1.25W (Ta)
98 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRLML6401TRPBF
Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存25,991,016
MOSFET (Metal Oxide)
12V
4.3A (Ta)
1.8V, 4.5V
950mV @ 250µA
15nC @ 5V
830pF @ 10V
±8V
-
1.3W (Ta)
50 mOhm @ 4.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRLML2060TRPBF
Infineon Technologies

MOSFET N-CH 60V 1.2A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.67nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 64pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,255,508
MOSFET (Metal Oxide)
60V
1.2A (Ta)
4.5V, 10V
2.5V @ 25µA
0.67nC @ 4.5V
64pF @ 25V
±16V
-
1.25W (Ta)
480 mOhm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRLML0060TRPBF
Infineon Technologies

MOSFET N-CH 60V 2.7A SOT-23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 92 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存1,539,984
MOSFET (Metal Oxide)
60V
2.7A (Ta)
4.5V, 10V
2.5V @ 25µA
2.5nC @ 4.5V
290pF @ 25V
±16V
-
1.25W (Ta)
92 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRLML2402TRPBF
Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 930mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存5,922,408
MOSFET (Metal Oxide)
20V
1.2A (Ta)
2.7V, 4.5V
700mV @ 250µA
3.9nC @ 4.5V
110pF @ 15V
±12V
-
540mW (Ta)
250 mOhm @ 930mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRLML6402TRPBF
Infineon Technologies

MOSFET P-CH 20V 3.7A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存15,000,588
MOSFET (Metal Oxide)
20V
3.7A (Ta)
2.5V, 4.5V
1.2V @ 250µA
12nC @ 5V
633pF @ 10V
±12V
-
1.3W (Ta)
65 mOhm @ 3.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRLML6346TRPBF
Infineon Technologies

MOSFET N-CH 30V 3.4A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 24V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,825,616
MOSFET (Metal Oxide)
30V
3.4A (Ta)
2.5V, 4.5V
1.1V @ 10µA
2.9nC @ 4.5V
270pF @ 24V
±12V
-
1.3W (Ta)
63 mOhm @ 3.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
BSS308PEH6327XTSA1
Infineon Technologies

MOSFET P-CH 30V 2A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存665,502
MOSFET (Metal Oxide)
30V
2A (Ta)
4.5V, 10V
2V @ 11µA
5nC @ 10V
500pF @ 15V
±20V
-
500mW (Ta)
80 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3
BSS83PH6327XTSA1
Infineon Technologies

MOSFET P-CH 60V 0.33A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 330mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存563,880
MOSFET (Metal Oxide)
60V
330mA (Ta)
4.5V, 10V
2V @ 80µA
3.57nC @ 10V
78pF @ 25V
±20V
-
360mW (Ta)
2 Ohm @ 330mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3
IPN80R2K4P7ATMA1
Infineon Technologies

MOSFET N-CH 800V 2.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
封裝: -
庫存34,791
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
3.5V @ 40µA
7.5 nC @ 10 V
150 pF @ 500 V
±20V
-
6.3W (Tc)
2.4Ohm @ 800mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
IMBG65R015M2HXTMA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存1,500
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPDQ60R065S7XTMA1
Infineon Technologies

HIGH POWER_NEW PG-HDSOP-22

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 490µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 195W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
封裝: -
Request a Quote
MOSFET (Metal Oxide)
600 V
9A (Tc)
12V
4.5V @ 490µA
51 nC @ 12 V
1932 pF @ 300 V
±20V
-
195W (Tc)
65mOhm @ 8A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
IPB040N08NF2SATMA1
Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存2,370
MOSFET (Metal Oxide)
50 V
107A (Tc)
6V, 10V
3.8V @ 85µA
81 nC @ 10 V
3800 pF @ 40 V
±20V
-
150W (Tc)
4mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IAUC26N10S5L245ATMA1
Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-33
  • Package / Case: 8-PowerTDFN
封裝: -
庫存15,000
MOSFET (Metal Oxide)
100 V
26A (Tj)
4.5V, 10V
2.2V @ 13µA
12 nC @ 10 V
762 pF @ 50 V
±20V
-
40W (Tc)
24.5mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
IPT067N20NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 4.5V @ 251µA
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
封裝: -
庫存5,985
MOSFET (Metal Oxide)
200 V
15.3A (Ta), 137A (Tc)
10V, 15V
4.5V @ 251µA
107 nC @ 10 V
7300 pF @ 100 V
±20V
-
3.8W (Ta), 300W (Tc)
6.2mOhm @ 126A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
FF4MR12W2M1HB70BPSA1
Infineon Technologies

LOW POWER EASY

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IMBG120R350M1HXTMA1
Infineon Technologies

SICFET N-CH 1.2KV 4.7A TO263

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 800 V
  • Vgs (Max): +18V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 468mOhm @ 2A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封裝: -
庫存4,251
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
5.7V @ 1mA
5.9 nC @ 18 V
196 pF @ 800 V
+18V, -15V
-
65W (Tc)
468mOhm @ 2A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
BSP324L6327
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4-21
  • Package / Case: TO-261-4, TO-261AA
封裝: -
Request a Quote
MOSFET (Metal Oxide)
400 V
170mA (Ta)
4.5V, 10V
2.3V @ 94µA
5.9 nC @ 10 V
154 pF @ 25 V
±20V
-
1.8W (Ta)
25Ohm @ 170mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4-21
TO-261-4, TO-261AA
BSC0802LSATMA1
Infineon Technologies

MOSFET N-CH 100V 20A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 115µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-7
  • Package / Case: 8-PowerTDFN
封裝: -
庫存18,060
MOSFET (Metal Oxide)
100 V
20A (Ta), 100A (Tc)
4.5V, 10V
2.3V @ 115µA
46 nC @ 4.5 V
6500 pF @ 50 V
±20V
-
156W (Tc)
3.4mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
IPU50R950CEBKMA1
Infineon Technologies

MOSFET N-CH 500V 4.3A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: -
Request a Quote
MOSFET (Metal Oxide)
500 V
4.3A (Tc)
13V
3.5V @ 100µA
10.5 nC @ 10 V
231 pF @ 100 V
±20V
-
34W (Tc)
950mOhm @ 1.2A, 13V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPI045N10N3GXKSA1
Infineon Technologies

MOSFET N-CH 100V 100A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封裝: -
庫存1,377
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
3.5V @ 150µA
117 nC @ 10 V
8410 pF @ 50 V
±20V
-
214W (Tc)
4.5mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
BSF134N10NJ3GXUMA1
Infineon Technologies

MOSFET N-CH 100V 9A/40A 2WDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M™
  • Package / Case: 3-WDSON
封裝: -
庫存15,000
MOSFET (Metal Oxide)
100 V
9A (Ta), 40A (Tc)
6V, 10V
3.5V @ 40µA
30 nC @ 10 V
2300 pF @ 50 V
±20V
-
2.2W (Ta), 43W (Tc)
13.4mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M™
3-WDSON
IPB107N20NAATMA1
Infineon Technologies

MOSFET N-CH 200V 88A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存26,799
MOSFET (Metal Oxide)
200 V
88A (Tc)
10V
4V @ 270µA
87 nC @ 10 V
7100 pF @ 100 V
±20V
-
300W (Tc)
10.7mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD19DP10NMATMA1
Infineon Technologies

TRENCH >=100V PG-TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.04mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存5,721
MOSFET (Metal Oxide)
100 V
2.6A (Ta), 13.7A (Tc)
10V
4V @ 1.04mA
45 nC @ 10 V
2000 pF @ 50 V
±20V
-
3W (Ta), 83W (Tc)
186mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIPC69SN60C3X2SA1
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-