圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
650V COOLMOS CFD7A SJ POWER DEVI
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封裝: - |
庫存6 |
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MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4.5V @ 260µA | 23 nC @ 10 V | 1044 pF @ 400 V | ±20V | - | 63W (Tc) | 230mOhm @ 5.2A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 25V 36A/163A 2WDSON
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封裝: - |
Request a Quote |
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MOSFET (Metal Oxide) | 25 V | 36A (Ta), 163A (Tc) | 4.5V, 10V | 2V @ 250µA | 62 nC @ 10 V | 4400 pF @ 12 V | ±20V | - | 2.8W (Ta), 57W (Tc) | 1.3mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 10.3A (Tc) | 10V | 2V @ 21µA | 22 nC @ 10 V | 444 pF @ 25 V | ±20V | - | 50W (Tc) | 154mOhm @ 8.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V
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封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 560V 21A TO247-3
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封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 3.9V @ 1mA | 95 nC @ 10 V | 2400 pF @ 25 V | ±20V | - | 208W (Tc) | 190mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
SIC_DISCRETE
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封裝: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 104A (Tc) | 18V, 20V | 5.1V @ 15mA | 82 nC @ 20 V | 2667 pF @ 800 V | +23V, -5V | - | 468W (Tc) | 25mOhm @ 43A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET_(20V 40V)
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封裝: - |
庫存2,925 |
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MOSFET (Metal Oxide) | 40 V | 175A | 10V | - | 107 nC @ 10 V | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TDSON-8-43 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO220-3
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 3.5V @ 440µA | 45 nC @ 10 V | 950 pF @ 100 V | ±20V | - | 104W (Tc) | 280mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET 100V 10A DIE
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 10A | 10V | - | - | - | - | - | - | 180mOhm @ 10A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
SILICON CARBIDE MOSFET
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 30A (Tc) | - | 3V @ 250µA | 92 nC @ 10 V | 1870 pF @ 25 V | - | - | 120W (Tc) | 14mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 8HSOF
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | TOLL | 8-PowerSFN |
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Infineon Technologies |
SIC_DISCRETE
|
封裝: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 69A (Tc) | 18V, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | 1738 pF @ 800 V | +23V, -5V | - | 326W (Tc) | 38mOhm @ 27A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-14 | TO-247-4 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 3.8V @ 91µA | 68 nC @ 10 V | 4750 pF @ 37.5 V | ±20V | - | 150W (Tc) | 5.2mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 31A/205A 8TSON
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封裝: - |
庫存37,602 |
|
MOSFET (Metal Oxide) | 40 V | 31A (Ta), 205A (Tc) | - | 2V @ 51µA | 55 nC @ 10 V | 3900 pF @ 20 V | ±20V | - | 2.5W (Ta), 107W (Tc) | 1.35mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-4 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V 1.1A SOT223-4
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封裝: - |
庫存10,359 |
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MOSFET (Metal Oxide) | 60 V | 1.1A (Ta) | 4.5V, 10V | 2V @ 77µA | 4 nC @ 10 V | 120 pF @ 30 V | ±20V | - | 1.8W (Ta), 4.2W (Tc) | 750mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK
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封裝: - |
庫存20,682 |
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MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.8V @ 273µA | 206 nC @ 10 V | 14400 pF @ 37.5 V | ±20V | - | 300W (Tc) | 2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 45A TO247-3-41
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封裝: - |
庫存243 |
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MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | 4975 pF @ 400 V | ±20V | - | 227W (Tc) | 50mOhm @ 24.8A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
TRENCH 40<-<100V
|
封裝: - |
庫存3,000 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 23A HDSOP-10
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 4V @ 390µA | 34 nC @ 10 V | 1320 pF @ 400 V | ±20V | - | 139W (Tc) | 102mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
SIC DISCRETE
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封裝: - |
庫存636 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 70A (Tc) | 15V, 18V | 5.2V @ 11mA | 68 nC @ 18 V | 2160 pF @ 800 V | +20V, -7V | - | 273W (Tc) | 40.9mOhm @ 25.6A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-U02 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 950V 13.9A TO220-3
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封裝: - |
庫存1,482 |
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MOSFET (Metal Oxide) | 950 V | 13.9A (Tc) | 10V | 3.5V @ 1.25mA | 141 nC @ 10 V | 4170 pF @ 400 V | ±20V | - | 33W (Tc) | 130mOhm @ 25.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET COOL MOS 600V SAWED WAFER
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 27A HDSOP-10
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 27A (Tc) | - | 4.5V @ 340µA | 31 nC @ 10 V | 1329 pF @ 400 V | ±20V | - | 176W (Tc) | 125mOhm @ 6.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
||
Infineon Technologies |
TRENCH >=100V
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 35A (Ta), 276A (Tc) | 6V, 10V | 3.8V @ 279µA | 210 nC @ 10 V | 16000 pF @ 50 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.53mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-1 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
IC DISCRETE
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 76A TO247-4
|
封裝: - |
庫存720 |
|
MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 4V @ 1.48mA | 121 nC @ 10 V | 5243 pF @ 400 V | ±20V | - | 255W (Tc) | 37mOhm @ 29.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |