頁 64 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

IPA082N10NF2SXKSA1

Infineon Technologies

TRENCH >=100V PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

封裝: -

庫存294

MOSFET (Metal Oxide)

100 V

46A (Tc)

6V, 10V

3.8V @ 46µA

42 nC @ 10 V

2000 pF @ 50 V

±20V

-

35W (Tc)

8.2mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

IPA023N04NM3SXKSA1

Infineon Technologies

TRENCH <= 40V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

IPTC017N12NM6ATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR,120V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-U01
Package / Case: 16-PowerSOP Module

封裝: -

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MOSFET (Metal Oxide)

120 V

32A (Ta), 331A (Tc)

8V, 10V

3.6V @ 275µA

141 nC @ 10 V

11000 pF @ 60 V

±20V

-

3.8W (Ta), 395W (Tc)

1.7mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-16-U01

16-PowerSOP Module

IAUC100N04S6N015ATMA1

Infineon Technologies

IAUC100N04S6N015ATMA1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封裝: -

庫存20,718

MOSFET (Metal Oxide)

40 V

100A (Tc)

7V, 10V

3V @ 50µA

55 nC @ 10 V

3470 pF @ 25 V

±20V

-

100W (Tc)

1.55mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IRFH5215TR2PBF

Infineon Technologies

MOSFET N-CH 150V 5.0A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-VQFN Exposed Pad

封裝: -

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MOSFET (Metal Oxide)

150 V

5A (Ta), 27A (Tc)

-

5V @ 100µA

32 nC @ 10 V

1350 pF @ 50 V

-

58mOhm @ 16A, 10V

-

Surface Mount

PQFN (5x6)

8-VQFN Exposed Pad

BSC030P03NS3GAUMA1

Infineon Technologies

MOSFET P-CH 30V 25.4/100A 8TDSON

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.1V @ 345µA
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

封裝: -

庫存13,941

MOSFET (Metal Oxide)

30 V

25.4A (Ta), 100A (Tc)

6V, 10V

3.1V @ 345µA

186 nC @ 10 V

14000 pF @ 15 V

±25V

-

2.5W (Ta), 125W (Tc)

3mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

BSO080P03SHXUMA1

Infineon Technologies

MOSFET P-CH 30V 12.6A 8DSO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: -

庫存14,106

MOSFET (Metal Oxide)

30 V

12.6A (Ta)

10V

2.2V @ 250µA

136 nC @ 10 V

5890 pF @ 25 V

±25V

-

1.79W (Ta)

8mOhm @ 14.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8

8-SOIC (0.154", 3.90mm Width)

IPDQ60R010S7XTMA1

Infineon Technologies

HIGH POWER_NEW PG-HDSOP-22

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封裝: -

庫存321

MOSFET (Metal Oxide)

600 V

50A (Tc)

12V

4.5V @ 3.08mA

318 nC @ 12 V

11987 pF @ 300 V

±20V

-

694W (Tc)

10mOhm @ 50A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IRFC4905B

Infineon Technologies

MOSFET 55V 42A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 42A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封裝: -

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MOSFET (Metal Oxide)

55 V

42A

10V

-

20mOhm @ 42A, 10V

-

Surface Mount

Die

IPT009N06NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 220µA
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

封裝: -

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MOSFET (Metal Oxide)

60 V

48A (Ta), 427A (Tc)

6V, 10V

3.3V @ 220µA

257 nC @ 10 V

16000 pF @ 30 V

±20V

-

3.8W (Ta), 300W (Tc)

0.9mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IQE022N06LM5CGSCATMA1

Infineon Technologies

OPTIMOS 5 POWER-TRANSISTOR 60V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHTFN-9
Package / Case: 9-PowerWDFN

封裝: -

庫存17,778

MOSFET (Metal Oxide)

60 V

24A (Ta), 151A (Tc)

4.5V, 10V

2.3V @ 48µA

53 nC @ 10 V

4420 pF @ 30 V

±20V

-

2.5W (Ta), 100W (Tc)

2.2mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WHTFN-9

9-PowerWDFN

IPD06P005LSAUMA1

Infineon Technologies

MOSFET P-CH 60V 6.5A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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MOSFET (Metal Oxide)

60 V

6.5A (Tc)

4.5V, 10V

2V @ 270µA

13.8 nC @ 10 V

420 pF @ 30 V

±20V

-

28W (Tc)

250mOhm @ 6.5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPTG011N08NM5ATMA1

Infineon Technologies

MOSFET N-CH 80V 42A/408A HSOG-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

封裝: -

庫存10,371

MOSFET (Metal Oxide)

80 V

42A (Ta), 408A (Tc)

6V, 10V

3.8V @ 280µA

223 nC @ 10 V

17000 pF @ 40 V

±20V

-

3.8W (Ta), 375W (Tc)

1.1mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8-1

8-PowerSMD, Gull Wing

IRFP4568PBFXKMA1

Infineon Technologies

TRENCH >=100V PG-TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 517W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封裝: -

庫存558

MOSFET (Metal Oxide)

150 V

171A (Tc)

10V

5V @ 250µA

227 nC @ 10 V

10470 pF @ 50 V

±30V

-

517W (Tc)

5.9mOhm @ 103A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IPD90P03P4L04ATMA2

Infineon Technologies

MOSFET P-CH 30V 90A TO252-31

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

庫存19,005

MOSFET (Metal Oxide)

30 V

90A (Tc)

-

2V @ 253µA

160 nC @ 10 V

11300 pF @ 25 V

+5V, -16V

-

137W (Tc)

4.1mOhm @ 90A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPL65R160CFD7AUMA1

Infineon Technologies

COOLMOS CFD7 SUPERJUNCTION MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

封裝: -

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MOSFET (Metal Oxide)

650 V

17A (Tc)

10V

4.5V @ 320µA

28 nC @ 10 V

1283 pF @ 400 V

±20V

-

98W (Tc)

160mOhm @ 6.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

IRLHM620TR2PBF

Infineon Technologies

MOSFET N-CH 20V 26A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (3x3)
Package / Case: 8-VQFN Exposed Pad

封裝: -

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MOSFET (Metal Oxide)

20 V

26A (Ta), 40A (Tc)

-

1.1V @ 50µA

78 nC @ 4.5 V

3620 pF @ 10 V

-

2.5mOhm @ 20A, 4.5V

-

Surface Mount

PQFN (3x3)

8-VQFN Exposed Pad

IRFH7440TR2PBF

Infineon Technologies

MOSFET N-CH 40V 85A 8PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

封裝: -

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MOSFET (Metal Oxide)

40 V

85A (Tc)

-

3.9V @ 100µA

138 nC @ 10 V

4574 pF @ 25 V

-

2.4mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

IAUC70N08S5N074ATMA1

Infineon Technologies

MOSFET N-CH 80V 70A 8TDSON-33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

封裝: -

庫存20,775

MOSFET (Metal Oxide)

80 V

70A (Tc)

6V, 10V

3.8V @ 36µA

30 nC @ 10 V

2080 pF @ 40 V

±20V

-

83W (Tc)

7.4mOhm @ 35A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

IPB65R045C7ATMA2

Infineon Technologies

MOSFET N-CH 650V 46A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

庫存5,592

MOSFET (Metal Oxide)

650 V

46A (Tc)

10V

4V @ 1.25mA

93 nC @ 10 V

4340 pF @ 400 V

±20V

-

227W (Tc)

45mOhm @ 24.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB320P10LMATMA1

Infineon Technologies

TRENCH >=100V PG-TO263-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

庫存2,991

MOSFET (Metal Oxide)

100 V

6.5A (Ta), 63A (Tc)

4.5V, 10V

2V @ 5.55mA

219 nC @ 10 V

11000 pF @ 50 V

±20V

-

3.8W (Ta), 300W (Tc)

32mOhm @ 54A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IMW120R060M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 36A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V
Vgs (Max): +23V, -7V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

封裝: -

Request a Quote

SiCFET (Silicon Carbide)

1200 V

36A (Tc)

15V, 18V

5.7V @ 5.6mA

31 nC @ 18 V

1060 pF @ 800 V

+23V, -7V

-

150W (Tc)

78mOhm @ 13A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

BSC010N04LSCATMA1

Infineon Technologies

MOSFET N-CH 40V 282A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

MOSFET (Metal Oxide)

40 V

282A (Tc)

4.5V, 10V

2V @ 250µA

133 nC @ 10 V

9500 pF @ 20 V

±20V

-

139W (Tc)

1.05mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

-

FF6MR12W2M1HB70BPSA1

Infineon Technologies

LOW POWER EASY

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存36

-

IPW60R099CPFKSA1

Infineon Technologies

MOSFET N-CH 650V 31A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

封裝: -

庫存684

MOSFET (Metal Oxide)

650 V

31A (Tc)

10V

3.5V @ 1.2mA

80 nC @ 10 V

2800 pF @ 100 V

±20V

-

255W (Tc)

99mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPT60R075CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 33A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封裝: -

庫存3,897

MOSFET (Metal Oxide)

600 V

33A (Tc)

10V

4.5V @ 570µA

51 nC @ 10 V

2103 pF @ 400 V

±20V

-

188W (Tc)

75mOhm @ 11.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IPL60R199CPAUMA1

Infineon Technologies

MOSFET N-CH 600V 16.4A 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

封裝: -

庫存7,497

MOSFET (Metal Oxide)

600 V

16.4A (Tc)

10V

3.5V @ 660µA

32 nC @ 10 V

1520 pF @ 100 V

±20V

-

139W (Tc)

199mOhm @ 9.9A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

IMZA65R007M2HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPA082N10NF2SXKSA1	Infineon Technologies	TRENCH >=100V PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	封裝: -	庫存294	MOSFET (Metal Oxide)	100 V	46A (Tc)	6V, 10V	3.8V @ 46µA	42 nC @ 10 V	2000 pF @ 50 V	±20V	-	35W (Tc)	8.2mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IPA023N04NM3SXKSA1	Infineon Technologies	TRENCH <= 40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPTC017N12NM6ATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR,120V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-U01 Package / Case: 16-PowerSOP Module	封裝: -	Request a Quote	MOSFET (Metal Oxide)	120 V	32A (Ta), 331A (Tc)	8V, 10V	3.6V @ 275µA	141 nC @ 10 V	11000 pF @ 60 V	±20V	-	3.8W (Ta), 395W (Tc)	1.7mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-U01	16-PowerSOP Module
IAUC100N04S6N015ATMA1	Infineon Technologies	IAUC100N04S6N015ATMA1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封裝: -	庫存20,718	MOSFET (Metal Oxide)	40 V	100A (Tc)	7V, 10V	3V @ 50µA	55 nC @ 10 V	3470 pF @ 25 V	±20V	-	100W (Tc)	1.55mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRFH5215TR2PBF	Infineon Technologies	MOSFET N-CH 150V 5.0A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	封裝: -	Request a Quote	MOSFET (Metal Oxide)	150 V	5A (Ta), 27A (Tc)	-	5V @ 100µA	32 nC @ 10 V	1350 pF @ 50 V	-	-	-	58mOhm @ 16A, 10V	-	Surface Mount	PQFN (5x6)	8-VQFN Exposed Pad
BSC030P03NS3GAUMA1	Infineon Technologies	MOSFET P-CH 30V 25.4/100A 8TDSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 345µA Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	封裝: -	庫存13,941	MOSFET (Metal Oxide)	30 V	25.4A (Ta), 100A (Tc)	6V, 10V	3.1V @ 345µA	186 nC @ 10 V	14000 pF @ 15 V	±25V	-	2.5W (Ta), 125W (Tc)	3mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
BSO080P03SHXUMA1	Infineon Technologies	MOSFET P-CH 30V 12.6A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.79W (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: -	庫存14,106	MOSFET (Metal Oxide)	30 V	12.6A (Ta)	10V	2.2V @ 250µA	136 nC @ 10 V	5890 pF @ 25 V	±25V	-	1.79W (Ta)	8mOhm @ 14.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IPDQ60R010S7XTMA1	Infineon Technologies	HIGH POWER_NEW PG-HDSOP-22 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封裝: -	庫存321	MOSFET (Metal Oxide)	600 V	50A (Tc)	12V	4.5V @ 3.08mA	318 nC @ 12 V	11987 pF @ 300 V	±20V	-	694W (Tc)	10mOhm @ 50A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IRFC4905B	Infineon Technologies	MOSFET 55V 42A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 42A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封裝: -	Request a Quote	MOSFET (Metal Oxide)	55 V	42A	10V	-	-	-	-	-	-	20mOhm @ 42A, 10V	-	Surface Mount	Die	Die
IPT009N06NM5ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 427A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	60 V	48A (Ta), 427A (Tc)	6V, 10V	3.3V @ 220µA	257 nC @ 10 V	16000 pF @ 30 V	±20V	-	3.8W (Ta), 300W (Tc)	0.9mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IQE022N06LM5CGSCATMA1	Infineon Technologies	OPTIMOS 5 POWER-TRANSISTOR 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 48µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHTFN-9 Package / Case: 9-PowerWDFN	封裝: -	庫存17,778	MOSFET (Metal Oxide)	60 V	24A (Ta), 151A (Tc)	4.5V, 10V	2.3V @ 48µA	53 nC @ 10 V	4420 pF @ 30 V	±20V	-	2.5W (Ta), 100W (Tc)	2.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHTFN-9	9-PowerWDFN
IPD06P005LSAUMA1	Infineon Technologies	MOSFET P-CH 60V 6.5A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	Request a Quote	MOSFET (Metal Oxide)	60 V	6.5A (Tc)	4.5V, 10V	2V @ 270µA	13.8 nC @ 10 V	420 pF @ 30 V	±20V	-	28W (Tc)	250mOhm @ 6.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPTG011N08NM5ATMA1	Infineon Technologies	MOSFET N-CH 80V 42A/408A HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	封裝: -	庫存10,371	MOSFET (Metal Oxide)	80 V	42A (Ta), 408A (Tc)	6V, 10V	3.8V @ 280µA	223 nC @ 10 V	17000 pF @ 40 V	±20V	-	3.8W (Ta), 375W (Tc)	1.1mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing
IRFP4568PBFXKMA1	Infineon Technologies	TRENCH >=100V PG-TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封裝: -	庫存558	MOSFET (Metal Oxide)	150 V	171A (Tc)	10V	5V @ 250µA	227 nC @ 10 V	10470 pF @ 50 V	±30V	-	517W (Tc)	5.9mOhm @ 103A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPD90P03P4L04ATMA2	Infineon Technologies	MOSFET P-CH 30V 90A TO252-31 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	庫存19,005	MOSFET (Metal Oxide)	30 V	90A (Tc)	-	2V @ 253µA	160 nC @ 10 V	11300 pF @ 25 V	+5V, -16V	-	137W (Tc)	4.1mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPL65R160CFD7AUMA1	Infineon Technologies	COOLMOS CFD7 SUPERJUNCTION MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	17A (Tc)	10V	4.5V @ 320µA	28 nC @ 10 V	1283 pF @ 400 V	±20V	-	98W (Tc)	160mOhm @ 6.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IRLHM620TR2PBF	Infineon Technologies	MOSFET N-CH 20V 26A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (3x3) Package / Case: 8-VQFN Exposed Pad	封裝: -	Request a Quote	MOSFET (Metal Oxide)	20 V	26A (Ta), 40A (Tc)	-	1.1V @ 50µA	78 nC @ 4.5 V	3620 pF @ 10 V	-	-	-	2.5mOhm @ 20A, 4.5V	-	Surface Mount	PQFN (3x3)	8-VQFN Exposed Pad
IRFH7440TR2PBF	Infineon Technologies	MOSFET N-CH 40V 85A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	85A (Tc)	-	3.9V @ 100µA	138 nC @ 10 V	4574 pF @ 25 V	-	-	-	2.4mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IAUC70N08S5N074ATMA1	Infineon Technologies	MOSFET N-CH 80V 70A 8TDSON-33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	封裝: -	庫存20,775	MOSFET (Metal Oxide)	80 V	70A (Tc)	6V, 10V	3.8V @ 36µA	30 nC @ 10 V	2080 pF @ 40 V	±20V	-	83W (Tc)	7.4mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
IPB65R045C7ATMA2	Infineon Technologies	MOSFET N-CH 650V 46A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	庫存5,592	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	4V @ 1.25mA	93 nC @ 10 V	4340 pF @ 400 V	±20V	-	227W (Tc)	45mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB320P10LMATMA1	Infineon Technologies	TRENCH >=100V PG-TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 5.55mA Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	庫存2,991	MOSFET (Metal Oxide)	100 V	6.5A (Ta), 63A (Tc)	4.5V, 10V	2V @ 5.55mA	219 nC @ 10 V	11000 pF @ 50 V	±20V	-	3.8W (Ta), 300W (Tc)	32mOhm @ 54A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMW120R060M1HXKSA1	Infineon Technologies	SICFET N-CH 1.2KV 36A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V Vgs (Max): +23V, -7V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	封裝: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	15V, 18V	5.7V @ 5.6mA	31 nC @ 18 V	1060 pF @ 800 V	+23V, -7V	-	150W (Tc)	78mOhm @ 13A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
BSC010N04LSCATMA1	Infineon Technologies	MOSFET N-CH 40V 282A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	282A (Tc)	4.5V, 10V	2V @ 250µA	133 nC @ 10 V	9500 pF @ 20 V	±20V	-	139W (Tc)	1.05mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	-	-	-
FF6MR12W2M1HB70BPSA1	Infineon Technologies	LOW POWER EASY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存36	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW60R099CPFKSA1	Infineon Technologies	MOSFET N-CH 650V 31A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	封裝: -	庫存684	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	3.5V @ 1.2mA	80 nC @ 10 V	2800 pF @ 100 V	±20V	-	255W (Tc)	99mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPT60R075CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 33A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封裝: -	庫存3,897	MOSFET (Metal Oxide)	600 V	33A (Tc)	10V	4.5V @ 570µA	51 nC @ 10 V	2103 pF @ 400 V	±20V	-	188W (Tc)	75mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPL60R199CPAUMA1	Infineon Technologies	MOSFET N-CH 600V 16.4A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	封裝: -	庫存7,497	MOSFET (Metal Oxide)	600 V	16.4A (Tc)	10V	3.5V @ 660µA	32 nC @ 10 V	1520 pF @ 100 V	±20V	-	139W (Tc)	199mOhm @ 9.9A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IMZA65R007M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-