頁 38 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

IMBG120R078M2HXTMA1

Infineon Technologies

SIC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存2,949

-

ISZ143N13NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

IRF7416TRPBF-1

Infineon Technologies

MOSFET P-CH 30V 10A 8SO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.04V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: -

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MOSFET (Metal Oxide)

30 V

10A (Ta)

-

2.04V @ 250µA

92 nC @ 10 V

1700 pF @ 25 V

±20V

-

2.5W (Ta)

20mOhm @ 5.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

IPT013N08NM5LFATMA1

Infineon Technologies

TRENCH 40<-<100V PG-HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

封裝: -

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MOSFET (Metal Oxide)

80 V

333A (Tc)

10V

4.1V @ 250µA

158 nC @ 10 V

820 pF @ 40 V

±20V

-

278W (Tc)

1.3mOhm @ 150A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IQE050N08NM5SCATMA1

Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHSON-8-1
Package / Case: 8-PowerWDFN

封裝: -

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MOSFET (Metal Oxide)

80 V

16A (Ta), 99A (Tc)

6V, 10V

3.8V @ 49µA

44 nC @ 10 V

2900 pF @ 40 V

±20V

-

2.5W (Ta), 100W (Tc)

5mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WHSON-8-1

8-PowerWDFN

IPL60R160CFD7AUMA1

Infineon Technologies

MOSFET N CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4-1
Package / Case: 4-PowerTSFN

封裝: -

庫存9,147

MOSFET (Metal Oxide)

600 V

16A (Tc)

10V

4.5V @ 340µA

31 nC @ 10 V

1330 pF @ 400 V

±20V

-

95W (Tc)

160mOhm @ 6.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4-1

4-PowerTSFN

94-2300PBF

Infineon Technologies

IC MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

IPL65R210CFDAUMA2

Infineon Technologies

MOSFET N-CH 650V 16.6A 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

封裝: -

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MOSFET (Metal Oxide)

650 V

16.6A (Tc)

10V

4.5V @ 700µA

68 nC @ 10 V

1850 pF @ 100 V

±20V

-

151W (Tc)

210mOhm @ 7.3A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

IRFC5305B

Infineon Technologies

MOSFET 55V 31A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 31A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 60mOhm @ 31A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封裝: -

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MOSFET (Metal Oxide)

55 V

31A

10V

-

60mOhm @ 31A, 10V

-

Surface Mount

Die

BSZ0704LSATMA1

Infineon Technologies

MOSFET N-CH 60V 11A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

封裝: -

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MOSFET (Metal Oxide)

60 V

11A (Ta), 40A (Tc)

4.5V, 10V

2.3V @ 14µA

8.6 nC @ 4.5 V

1300 pF @ 30 V

±20V

-

2.1W (Ta), 36W (Tc)

9.9mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPP230N06L3GXKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 30A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

60 V

30A

4.5V, 10V

2.2V @ 11µA

7 nC @ 4.5 V

1200 pF @ 30 V

±20V

-

36W

23mOhm @ 30A, 10V

-55°C ~ 175°C

Through Hole

PG-TO220-3

TO-220-3

IMBG65R050M2HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存1,482

-

IPW60R045P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 61A TO247-3-41

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.08mA
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 201W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

封裝: -

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MOSFET (Metal Oxide)

650 V

61A (Tc)

10V

4V @ 1.08mA

90 nC @ 10 V

3891 pF @ 400 V

±20V

-

201W (Tc)

45mOhm @ 22.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

IGLR60R190D1XUMA1

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 55.5W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-6
Package / Case: 8-PowerTDFN

封裝: -

庫存12,318

GaNFET (Gallium Nitride)

600 V

12.8A (Tc)

-

1.6V @ 960µA

-

157 pF @ 400 V

-10V

-

55.5W (Tc)

-

-40°C ~ 150°C (TJ)

Surface Mount

PG-TSON-8-6

8-PowerTDFN

IPP90R1K2C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 5.1A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

900 V

5.1A (Tc)

10V

3.5V @ 310µA

28 nC @ 10 V

710 pF @ 100 V

±20V

-

83W (Tc)

1.2Ohm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP90R1K2C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 5.1A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

900 V

5.1A (Tc)

10V

3.5V @ 310µA

28 nC @ 10 V

710 pF @ 100 V

±20V

-

83W (Tc)

1.2Ohm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPB65R420CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 8.7A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

650 V

8.7A (Tc)

10V

4.5V @ 340µA

32 nC @ 10 V

870 pF @ 100 V

±20V

-

83.3W (Tc)

420mOhm @ 3.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IQD005N04NM6CGATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-U02
Package / Case: 9-PowerTDFN

封裝: -

庫存14,040

MOSFET (Metal Oxide)

40 V

58A (Ta), 610A (Tc)

6V, 10V

2.8V @ 1.449mA

161 nC @ 10 V

12000 pF @ 20 V

±20V

-

3W (Ta), 333W (Tc)

0.47mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TTFN-9-U02

9-PowerTDFN

IPA60R170CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封裝: -

庫存765

MOSFET (Metal Oxide)

650 V

8A (Tc)

10V

4.5V @ 300µA

28 nC @ 10 V

1199 pF @ 400 V

±20V

-

26W (Tc)

170mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPT65R080CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

封裝: -

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-

650 V

-

Surface Mount

PG-HSOF-8-3

8-PowerSFN

SPW24N60C3FKSA1

Infineon Technologies

MOSFET N-CH 650V 24.3A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

封裝: -

庫存72

MOSFET (Metal Oxide)

650 V

24.3A (Tc)

10V

3.9V @ 1.2mA

135 nC @ 10 V

3000 pF @ 25 V

±20V

-

240W (Tc)

160mOhm @ 15.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IAUCN04S7N012ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

封裝: -

庫存3,000

MOSFET (Metal Oxide)

40 V

-

10V

-

55 nC @ 10 V

-

-55°C ~ 175°C

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

BSZ440N10NS3GATMA1

Infineon Technologies

MOSFET N-CH 100V 5.3A/18A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

封裝: -

庫存71,781

MOSFET (Metal Oxide)

100 V

5.3A (Ta), 18A (Tc)

6V, 10V

2.7V @ 12µA

9.1 nC @ 10 V

640 pF @ 50 V

±20V

-

29W (Tc)

44mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

IAUZ30N08S5N186ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-32
Package / Case: 8-PowerTDFN

封裝: -

庫存15,000

MOSFET (Metal Oxide)

80 V

30A (Tj)

6V, 10V

3.8V @ 13µA

12.1 nC @ 10 V

759 pF @ 40 V

±20V

-

41W (Tc)

18.6mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8-32

8-PowerTDFN

IPTC044N15NM5ATMA1

Infineon Technologies

OPTIMOS 5 POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 235µA
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-2
Package / Case: 16-PowerSOP Module

封裝: -

庫存4,362

MOSFET (Metal Oxide)

150 V

19.4A (Ta), 174A (Tc)

8V, 10V

4.6V @ 235µA

89 nC @ 10 V

7000 pF @ 75 V

±20V

-

3.8W (Ta), 300W (Tc)

4.4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-16-2

16-PowerSOP Module

IRFC9024NB

Infineon Technologies

MOSFET 55V 11A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 11A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 175mOhm @ 11A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封裝: -

Request a Quote

MOSFET (Metal Oxide)

55 V

11A

10V

-

175mOhm @ 11A, 10V

-

Surface Mount

Die

BSZ900N15NS3GATMA1

Infineon Technologies

MOSFET N-CH 150V 13A 8TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

封裝: -

庫存41,277

MOSFET (Metal Oxide)

150 V

13A (Tc)

8V, 10V

4V @ 20µA

7 nC @ 10 V

510 pF @ 75 V

±20V

-

38W (Tc)

90mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

IRF100P218XKMA1

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 556W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封裝: -

Request a Quote

MOSFET (Metal Oxide)

100 V

209A (Tc)

6V, 10V

3.8V @ 278µA

555 nC @ 10 V

25000 pF @ 50 V

±20V

-

556W (Tc)

1.28mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IMBG120R078M2HXTMA1	Infineon Technologies	SIC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存2,949	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISZ143N13NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7416TRPBF-1	Infineon Technologies	MOSFET P-CH 30V 10A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.04V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	-	2.04V @ 250µA	92 nC @ 10 V	1700 pF @ 25 V	±20V	-	2.5W (Ta)	20mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPT013N08NM5LFATMA1	Infineon Technologies	TRENCH 40<-<100V PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	80 V	333A (Tc)	10V	4.1V @ 250µA	158 nC @ 10 V	820 pF @ 40 V	±20V	-	278W (Tc)	1.3mOhm @ 150A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IQE050N08NM5SCATMA1	Infineon Technologies	OPTIMOS LOWVOLTAGE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHSON-8-1 Package / Case: 8-PowerWDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	80 V	16A (Ta), 99A (Tc)	6V, 10V	3.8V @ 49µA	44 nC @ 10 V	2900 pF @ 40 V	±20V	-	2.5W (Ta), 100W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHSON-8-1	8-PowerWDFN
IPL60R160CFD7AUMA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	封裝: -	庫存9,147	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	4.5V @ 340µA	31 nC @ 10 V	1330 pF @ 400 V	±20V	-	95W (Tc)	160mOhm @ 6.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN
94-2300PBF	Infineon Technologies	IC MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPL65R210CFDAUMA2	Infineon Technologies	MOSFET N-CH 650V 16.6A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	16.6A (Tc)	10V	4.5V @ 700µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	210mOhm @ 7.3A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IRFC5305B	Infineon Technologies	MOSFET 55V 31A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 31A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 60mOhm @ 31A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封裝: -	Request a Quote	MOSFET (Metal Oxide)	55 V	31A	10V	-	-	-	-	-	-	60mOhm @ 31A, 10V	-	Surface Mount	Die	Die
BSZ0704LSATMA1	Infineon Technologies	MOSFET N-CH 60V 11A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	60 V	11A (Ta), 40A (Tc)	4.5V, 10V	2.3V @ 14µA	8.6 nC @ 4.5 V	1300 pF @ 30 V	±20V	-	2.1W (Ta), 36W (Tc)	9.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPP230N06L3GXKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	60 V	30A	4.5V, 10V	2.2V @ 11µA	7 nC @ 4.5 V	1200 pF @ 30 V	±20V	-	36W	23mOhm @ 30A, 10V	-55°C ~ 175°C	Through Hole	PG-TO220-3	TO-220-3
IMBG65R050M2HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存1,482	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW60R045P7XKSA1	Infineon Technologies	MOSFET N-CH 650V 61A TO247-3-41 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.08mA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 201W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	61A (Tc)	10V	4V @ 1.08mA	90 nC @ 10 V	3891 pF @ 400 V	±20V	-	201W (Tc)	45mOhm @ 22.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IGLR60R190D1XUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 55.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-6 Package / Case: 8-PowerTDFN	封裝: -	庫存12,318	GaNFET (Gallium Nitride)	600 V	12.8A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	55.5W (Tc)	-	-40°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-6	8-PowerTDFN
IPP90R1K2C3XKSA2	Infineon Technologies	MOSFET N-CH 900V 5.1A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	900 V	5.1A (Tc)	10V	3.5V @ 310µA	28 nC @ 10 V	710 pF @ 100 V	±20V	-	83W (Tc)	1.2Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPP90R1K2C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 5.1A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	900 V	5.1A (Tc)	10V	3.5V @ 310µA	28 nC @ 10 V	710 pF @ 100 V	±20V	-	83W (Tc)	1.2Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPB65R420CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 8.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	8.7A (Tc)	10V	4.5V @ 340µA	32 nC @ 10 V	870 pF @ 100 V	±20V	-	83.3W (Tc)	420mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IQD005N04NM6CGATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-U02 Package / Case: 9-PowerTDFN	封裝: -	庫存14,040	MOSFET (Metal Oxide)	40 V	58A (Ta), 610A (Tc)	6V, 10V	2.8V @ 1.449mA	161 nC @ 10 V	12000 pF @ 20 V	±20V	-	3W (Ta), 333W (Tc)	0.47mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN
IPA60R170CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封裝: -	庫存765	MOSFET (Metal Oxide)	650 V	8A (Tc)	10V	4.5V @ 300µA	28 nC @ 10 V	1199 pF @ 400 V	±20V	-	26W (Tc)	170mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPT65R080CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	封裝: -	Request a Quote	-	650 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
SPW24N60C3FKSA1	Infineon Technologies	MOSFET N-CH 650V 24.3A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	封裝: -	庫存72	MOSFET (Metal Oxide)	650 V	24.3A (Tc)	10V	3.9V @ 1.2mA	135 nC @ 10 V	3000 pF @ 25 V	±20V	-	240W (Tc)	160mOhm @ 15.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IAUCN04S7N012ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	封裝: -	庫存3,000	MOSFET (Metal Oxide)	40 V	-	10V	-	55 nC @ 10 V	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
BSZ440N10NS3GATMA1	Infineon Technologies	MOSFET N-CH 100V 5.3A/18A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.7V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	封裝: -	庫存71,781	MOSFET (Metal Oxide)	100 V	5.3A (Ta), 18A (Tc)	6V, 10V	2.7V @ 12µA	9.1 nC @ 10 V	640 pF @ 50 V	±20V	-	29W (Tc)	44mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
IAUZ30N08S5N186ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-32 Package / Case: 8-PowerTDFN	封裝: -	庫存15,000	MOSFET (Metal Oxide)	80 V	30A (Tj)	6V, 10V	3.8V @ 13µA	12.1 nC @ 10 V	759 pF @ 40 V	±20V	-	41W (Tc)	18.6mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-32	8-PowerTDFN
IPTC044N15NM5ATMA1	Infineon Technologies	OPTIMOS 5 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 235µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	封裝: -	庫存4,362	MOSFET (Metal Oxide)	150 V	19.4A (Ta), 174A (Tc)	8V, 10V	4.6V @ 235µA	89 nC @ 10 V	7000 pF @ 75 V	±20V	-	3.8W (Ta), 300W (Tc)	4.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
IRFC9024NB	Infineon Technologies	MOSFET 55V 11A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 11A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 175mOhm @ 11A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封裝: -	Request a Quote	MOSFET (Metal Oxide)	55 V	11A	10V	-	-	-	-	-	-	175mOhm @ 11A, 10V	-	Surface Mount	Die	Die
BSZ900N15NS3GATMA1	Infineon Technologies	MOSFET N-CH 150V 13A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	封裝: -	庫存41,277	MOSFET (Metal Oxide)	150 V	13A (Tc)	8V, 10V	4V @ 20µA	7 nC @ 10 V	510 pF @ 75 V	±20V	-	38W (Tc)	90mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
IRF100P218XKMA1	Infineon Technologies	MOSFET N-CH 100V 209A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 278µA Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 556W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	100 V	209A (Tc)	6V, 10V	3.8V @ 278µA	555 nC @ 10 V	25000 pF @ 50 V	±20V	-	556W (Tc)	1.28mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3