頁 298 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

AUXMOS20956STR

Infineon Technologies

MOSFET N-CH 16SOIC

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存7,008

-

64-0055PBF

Infineon Technologies

MOSFET N-CH TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: -
Package / Case: -

封裝: -

庫存2,256

MOSFET (Metal Oxide)

60V

120A

10V

4V @ 150µA

120nC @ 10V

4520pF @ 50V

±20V

-

230W (Tc)

4.2 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

-

IPD60R380E6ATMA2

Infineon Technologies

MOSFET NCH 600V 10.6A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存6,944

MOSFET (Metal Oxide)

600V

10.6A (Tc)

10V

3.5V @ 300µA

32nC @ 10V

700pF @ 100V

±20V

Super Junction

83W (Tc)

380 mOhm @ 3.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

IPU60R1K4C6BKMA1

Infineon Technologies

MOSFET NCH 600V 3.2A TO251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

庫存7,664

MOSFET (Metal Oxide)

600V

3.2A (Tc)

10V

3.5V @ 90µA

9.4nC @ 10V

200pF @ 100V

±20V

Super Junction

28.4W (Tc)

1.4 Ohm @ 1.1A, 10V

-55°C ~ 155°C (TJ)

Through Hole

PG-TO251

TO-251-3 Short Leads, IPak, TO-251AA

IPD60R380E6BTMA1

Infineon Technologies

MOSFET NCH 600V 10.6A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存2,480

MOSFET (Metal Oxide)

600V

10.6A (Tc)

10V

3.5V @ 300µA

32nC @ 10V

700pF @ 100V

±20V

Super Junction

83W (Tc)

380 mOhm @ 3.8A, 10V

-55°C ~ 155°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

62-0136PBF

Infineon Technologies

MOSFET N-CH 30V 19A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: 8-SOIC

封裝: 8-SOIC

庫存3,088

MOSFET (Metal Oxide)

30V

19A (Ta)

10V

2.25V @ 250µA

44nC @ 4.5V

3710pF @ 15V

±20V

-

2.5W

4.5 mOhm @ 19A, 10V

-55°C ~ 150°C (TA)

Surface Mount

-

8-SOIC

62-0095PBF

Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 2W
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: 8-SOIC

封裝: 8-SOIC

庫存3,456

MOSFET (Metal Oxide)

20V

10A (Ta), 12A (Tc)

10V

2.55V @ 250µA

11nC @ 4.5V

900pF @ 10V

-

2W

13.4 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

-

8-SOIC

IRFH7182TRPBF

Infineon Technologies

MOSFET NCH 100V 23A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4W (Ta), 195W (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存6,432

MOSFET (Metal Oxide)

100V

23A (Ta), 157A (Tc)

10V

3.6V @ 250µA

74nC @ 10V

3120pF @ 50V

±20V

-

4W (Ta), 195W (Tc)

3.9 mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

IRLC4030EB

Infineon Technologies

MOSFET N-CH 100V DIE ON WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,936

-

IRFC4310EF

Infineon Technologies

MOSFET N-CH 100V DIE ON FILM

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,424

-

IRFC4115EB

Infineon Technologies

MOSFET N-CH 150V DIE ON WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存4,000

-

IRFC4010EB

Infineon Technologies

MOSFET N-CH 100V DIE ON WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,488

-

IRFC3306EB

Infineon Technologies

MOSFET N-CH 60V DIE ON WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存7,728

-

94-4849PBF

Infineon Technologies

MOSFET P-CH 55V 11A DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存4,000

-

94-2503PBF

Infineon Technologies

MOSFET N-CH 100V 57A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存5,328

-

94-2355PBF

Infineon Technologies

MOSFET N-CH 100V TO-220AB

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,120

-

4V, 10V

-

±16V

-

64-9150PBF

Infineon Technologies

MOSFET N-CH 40V DIRECTFETL8

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,568

-

64-9149PBF

Infineon Technologies

MOSFET N-CH 60V DIRECTFETL8

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,984

-

IPP80P04P405AKSA1

Infineon Technologies

MOSFET P-CH TO220-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: TO-220-3

庫存3,488

MOSFET (Metal Oxide)

40V

80A (Tc)

10V

4V @ 250µA

151nC @ 10V

10300pF @ 25V

±20V

-

125W (Tc)

5.2 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP80N06S4L05AKSA2

Infineon Technologies

MOSFET N-CH TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: TO-220-3

庫存3,776

MOSFET (Metal Oxide)

60V

80A (Tc)

4.5V, 10V

2.2V @ 60µA

110nC @ 10V

8180pF @ 25V

±16V

-

107W (Tc)

8.5 mOhm @ 40A, 4.5V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP70P04P409AKSA1

Infineon Technologies

MOSFET P-CH TO220-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存4,880

MOSFET (Metal Oxide)

40V

72A (Tc)

10V

4V @ 120µA

70nC @ 10V

4810pF @ 25V

±20V

-

75W (Tc)

9.4 mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPI80N06S4L05AKSA2

Infineon Technologies

MOSFET N-CH TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存4,144

MOSFET (Metal Oxide)

60V

80A (Tc)

4.5V, 10V

2.2V @ 60µA

110nC @ 10V

8180pF @ 25V

±16V

-

107W (Tc)

8.5 mOhm @ 40A, 4.5V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI120N06S4H1AKSA2

Infineon Technologies

MOSFET N-CH TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存3,792

MOSFET (Metal Oxide)

60V

120A (Tc)

10V

4V @ 200µA

270nC @ 10V

21900pF @ 25V

±20V

-

250W (Tc)

2.4 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI120N06S403AKSA2

Infineon Technologies

MOSFET N-CH TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存3,920

MOSFET (Metal Oxide)

60V

120A (Tc)

10V

4V @ 120µA

160nC @ 10V

13150pF @ 25V

±20V

-

167W (Tc)

3.2 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2Pak, TO-262AA

IPP90N06S4L04AKSA2

Infineon Technologies

MOSFET N-CH TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: TO-220-3

庫存4,992

MOSFET (Metal Oxide)

60V

90A (Tc)

4.5V, 10V

2.2V @ 90µA

170nC @ 10V

13000pF @ 25V

±16V

-

150W (Tc)

3.7 mOhm @ 90A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPB160N04S2L03ATMA2

Infineon Technologies

MOSFET N-CH TO262-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封裝: TO-263-7, D2Pak (6 Leads + Tab)

庫存7,632

MOSFET (Metal Oxide)

40V

160A (Tc)

4.5V, 10V

2V @ 250µA

230nC @ 5V

6000pF @ 15V

±20V

-

300W (Tc)

2.7 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2Pak (6 Leads + Tab)

SPD04N60S5BTMA1

Infineon Technologies

MOSFET N-CH 600V 4.5A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存3,296

MOSFET (Metal Oxide)

600V

4.5A (Tc)

10V

5.5V @ 200µA

22.9nC @ 10V

580pF @ 25V

±20V

-

50W (Tc)

950 mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

IPI11N60C3AAKSA2

Infineon Technologies

MOSFET N-CH I2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,040

-

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUXMOS20956STR	Infineon Technologies	MOSFET N-CH 16SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存7,008	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
64-0055PBF	Infineon Technologies	MOSFET N-CH TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: -	封裝: -	庫存2,256	MOSFET (Metal Oxide)	60V	120A	10V	4V @ 150µA	120nC @ 10V	4520pF @ 50V	±20V	-	230W (Tc)	4.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	-	-
IPD60R380E6ATMA2	Infineon Technologies	MOSFET NCH 600V 10.6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存6,944	MOSFET (Metal Oxide)	600V	10.6A (Tc)	10V	3.5V @ 300µA	32nC @ 10V	700pF @ 100V	±20V	Super Junction	83W (Tc)	380 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPU60R1K4C6BKMA1	Infineon Technologies	MOSFET NCH 600V 3.2A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封裝: TO-251-3 Short Leads, IPak, TO-251AA	庫存7,664	MOSFET (Metal Oxide)	600V	3.2A (Tc)	10V	3.5V @ 90µA	9.4nC @ 10V	200pF @ 100V	±20V	Super Junction	28.4W (Tc)	1.4 Ohm @ 1.1A, 10V	-55°C ~ 155°C (TJ)	Through Hole	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
IPD60R380E6BTMA1	Infineon Technologies	MOSFET NCH 600V 10.6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存2,480	MOSFET (Metal Oxide)	600V	10.6A (Tc)	10V	3.5V @ 300µA	32nC @ 10V	700pF @ 100V	±20V	Super Junction	83W (Tc)	380 mOhm @ 3.8A, 10V	-55°C ~ 155°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
62-0136PBF	Infineon Technologies	MOSFET N-CH 30V 19A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-SOIC	封裝: 8-SOIC	庫存3,088	MOSFET (Metal Oxide)	30V	19A (Ta)	10V	2.25V @ 250µA	44nC @ 4.5V	3710pF @ 15V	±20V	-	2.5W	4.5 mOhm @ 19A, 10V	-55°C ~ 150°C (TA)	Surface Mount	-	8-SOIC
62-0095PBF	Infineon Technologies	MOSFET 2N-CH 20V 10A/12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2W Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 8-SOIC	封裝: 8-SOIC	庫存3,456	MOSFET (Metal Oxide)	20V	10A (Ta), 12A (Tc)	10V	2.55V @ 250µA	11nC @ 4.5V	900pF @ 10V	-	-	2W	13.4 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	-	8-SOIC
IRFH7182TRPBF	Infineon Technologies	MOSFET NCH 100V 23A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 195W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存6,432	MOSFET (Metal Oxide)	100V	23A (Ta), 157A (Tc)	10V	3.6V @ 250µA	74nC @ 10V	3120pF @ 50V	±20V	-	4W (Ta), 195W (Tc)	3.9 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IRLC4030EB	Infineon Technologies	MOSFET N-CH 100V DIE ON WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,936	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4310EF	Infineon Technologies	MOSFET N-CH 100V DIE ON FILM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,424	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4115EB	Infineon Technologies	MOSFET N-CH 150V DIE ON WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存4,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4010EB	Infineon Technologies	MOSFET N-CH 100V DIE ON WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3306EB	Infineon Technologies	MOSFET N-CH 60V DIE ON WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存7,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
94-4849PBF	Infineon Technologies	MOSFET P-CH 55V 11A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存4,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
94-2503PBF	Infineon Technologies	MOSFET N-CH 100V 57A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存5,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
94-2355PBF	Infineon Technologies	MOSFET N-CH 100V TO-220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,120	-	-	-	4V, 10V	-	-	-	±16V	-	-	-	-	-	-	-
64-9150PBF	Infineon Technologies	MOSFET N-CH 40V DIRECTFETL8 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,568	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
64-9149PBF	Infineon Technologies	MOSFET N-CH 60V DIRECTFETL8 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,984	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP80P04P405AKSA1	Infineon Technologies	MOSFET P-CH TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: TO-220-3	庫存3,488	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	151nC @ 10V	10300pF @ 25V	±20V	-	125W (Tc)	5.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPP80N06S4L05AKSA2	Infineon Technologies	MOSFET N-CH TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: TO-220-3	庫存3,776	MOSFET (Metal Oxide)	60V	80A (Tc)	4.5V, 10V	2.2V @ 60µA	110nC @ 10V	8180pF @ 25V	±16V	-	107W (Tc)	8.5 mOhm @ 40A, 4.5V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPP70P04P409AKSA1	Infineon Technologies	MOSFET P-CH TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存4,880	MOSFET (Metal Oxide)	40V	72A (Tc)	10V	4V @ 120µA	70nC @ 10V	4810pF @ 25V	±20V	-	75W (Tc)	9.4 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPI80N06S4L05AKSA2	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存4,144	MOSFET (Metal Oxide)	60V	80A (Tc)	4.5V, 10V	2.2V @ 60µA	110nC @ 10V	8180pF @ 25V	±16V	-	107W (Tc)	8.5 mOhm @ 40A, 4.5V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI120N06S4H1AKSA2	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存3,792	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 200µA	270nC @ 10V	21900pF @ 25V	±20V	-	250W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI120N06S403AKSA2	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存3,920	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 120µA	160nC @ 10V	13150pF @ 25V	±20V	-	167W (Tc)	3.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPP90N06S4L04AKSA2	Infineon Technologies	MOSFET N-CH TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: TO-220-3	庫存4,992	MOSFET (Metal Oxide)	60V	90A (Tc)	4.5V, 10V	2.2V @ 90µA	170nC @ 10V	13000pF @ 25V	±16V	-	150W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPB160N04S2L03ATMA2	Infineon Technologies	MOSFET N-CH TO262-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	封裝: TO-263-7, D2Pak (6 Leads + Tab)	庫存7,632	MOSFET (Metal Oxide)	40V	160A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 5V	6000pF @ 15V	±20V	-	300W (Tc)	2.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab)
SPD04N60S5BTMA1	Infineon Technologies	MOSFET N-CH 600V 4.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存3,296	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	5.5V @ 200µA	22.9nC @ 10V	580pF @ 25V	±20V	-	50W (Tc)	950 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPI11N60C3AAKSA2	Infineon Technologies	MOSFET N-CH I2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,040	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-