頁 191 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

SIPC69N65C3X1SA1

Infineon Technologies

TRANSISTOR N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,232

-

IPW65R065C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO-247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存3,552

MOSFET (Metal Oxide)

650V

33A (Tc)

10V

4V @ 850µA

64nC @ 10V

3020pF @ 400V

±20V

-

171W (Tc)

65 mOhm @ 17.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPZ60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 162W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封裝: TO-247-4

庫存3,056

MOSFET (Metal Oxide)

600V

35A (Tc)

10V

4V @ 800µA

68nC @ 10V

2850pF @ 400V

±20V

-

162W (Tc)

60 mOhm @ 15.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IPW60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 162W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存4,192

MOSFET (Metal Oxide)

600V

35A (Tc)

10V

4V @ 800µA

68nC @ 10V

2850pF @ 400V

±20V

-

162W (Tc)

60 mOhm @ 15.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

AUIRFP2907

Infineon Technologies

MOSFET N-CH 75V 90A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 470W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 125A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封裝: TO-247-3

庫存4,672

MOSFET (Metal Oxide)

75V

90A (Tc)

10V

4V @ 250µA

620nC @ 10V

13000pF @ 25V

±20V

-

470W (Tc)

4.5 mOhm @ 125A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IRFP7718PBF

Infineon Technologies

MOSFET N CH 75V 195A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 830nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 29550pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 517W (Tc)
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,448

MOSFET (Metal Oxide)

75V

195A (Tc)

6V, 10V

3.7V @ 250µA

830nC @ 10V

29550pF @ 25V

±20V

-

517W (Tc)

1.8 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IPW60R099CPAFKSA1

Infineon Technologies

MOSFET N-CH 650V 31A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存2,144

MOSFET (Metal Oxide)

600V

31A (Tc)

10V

3.5V @ 1.2mA

80nC @ 10V

2800pF @ 100V

±20V

-

255W (Tc)

105 mOhm @ 18A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPT60R050G7XTMA1

Infineon Technologies

MOSFET N-CH 650V 44A HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

封裝: 8-PowerSFN

庫存3,520

MOSFET (Metal Oxide)

650V

44A (Tc)

10V

4V @ 800µA

68nC @ 10V

2670pF @ 400V

±20V

-

245W (Tc)

50 mOhm @ 15.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

IPW65R110CFDAFKSA1

Infineon Technologies

MOSFET N-CH 650V 31.2A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存4,848

MOSFET (Metal Oxide)

650V

31.2A (Tc)

10V

4.5V @ 1.3mA

118nC @ 10V

3240pF @ 100V

±20V

-

277.8W (Tc)

110 mOhm @ 12.7A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPP65R065C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO-220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存3,184

MOSFET (Metal Oxide)

650V

33A (Tc)

10V

4V @ 850µA

64nC @ 10V

3020pF @ 400V

±20V

-

171W (Tc)

65 mOhm @ 17.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPA65R065C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存5,328

MOSFET (Metal Oxide)

650V

15A (Tc)

10V

4V @ 850µA

64nC @ 10V

3020pF @ 400V

±20V

-

34W (Tc)

65 mOhm @ 17.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPZ60R070P6FKSA1

Infineon Technologies

MOSFET N-CH 600V TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 20.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封裝: TO-247-4

庫存7,024

MOSFET (Metal Oxide)

600V

53.5A (Tc)

10V

4.5V @ 1.72mA

100nC @ 10V

4750pF @ 100V

±20V

-

391W (Tc)

70 mOhm @ 20.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IPZ65R095C7XKSA1

Infineon Technologies

MOSFET N-CH 650V TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封裝: TO-247-4

庫存2,560

MOSFET (Metal Oxide)

650V

24A (Tc)

10V

4V @ 590µA

45nC @ 10V

2140pF @ 400V

±20V

-

128W (Tc)

95 mOhm @ 11.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IPC65R070C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,824

-

IPW60R060P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,744

-

SIPC44N50C3X1SA2

Infineon Technologies

TRANSISTOR N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存6,592

-

IPP60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 162W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存3,072

MOSFET (Metal Oxide)

600V

35A (Tc)

10V

4V @ 800µA

68nC @ 10V

2850pF @ 400V

±20V

-

162W (Tc)

60 mOhm @ 15.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPA60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 16A TO-220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存3,488

MOSFET (Metal Oxide)

600V

16A (Tc)

10V

4V @ 800µA

68nC @ 10V

2850pF @ 400V

±20V

-

34W (Tc)

60 mOhm @ 15.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

IPW80R290C3AFKSA1

Infineon Technologies

MOSFET N-CH 800V TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存6,160

-

IRFS4228PBF

Infineon Technologies

MOSFET N-CH 150V 83A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,312

MOSFET (Metal Oxide)

150V

83A (Tc)

10V

5V @ 250µA

107nC @ 10V

4530pF @ 25V

±30V

-

330W (Tc)

15 mOhm @ 33A, 10V

-40°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP410N30NAKSA1

Infineon Technologies

MOSFET N-CH TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 41 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存7,952

MOSFET (Metal Oxide)

300V

44A (Tc)

10V

4V @ 270µA

87nC @ 10V

7180pF @ 100V

±20V

-

300W (Tc)

41 mOhm @ 44A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

AUIRFP2602

Infineon Technologies

MOSFET N-CH 24V 180A TO-247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11220pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 180A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,624

MOSFET (Metal Oxide)

24V

180A (Tc)

10V

4V @ 250µA

390nC @ 10V

11220pF @ 25V

±20V

-

380W (Tc)

1.6 mOhm @ 180A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AD

TO-247-3

SPW24N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 21.7A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 185 mOhm @ 15.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存5,840

MOSFET (Metal Oxide)

650V

21.7A (Tc)

10V

5V @ 1.2mA

143nC @ 10V

3160pF @ 25V

±20V

-

240W (Tc)

185 mOhm @ 15.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPB65R065C7ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,896

MOSFET (Metal Oxide)

600V

7.3A (Tc)

10V

4.5V @ 200µA

12nC @ 10V

557pF @ 100V

±20V

-

171W (Tc)

600 mOhm @ 2.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRFP4004

Infineon Technologies

MOSFET N-CH 40V 350A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,208

MOSFET (Metal Oxide)

40V

195A (Tc)

10V

4V @ 250µA

330nC @ 10V

8920pF @ 25V

±20V

-

380W (Tc)

1.7 mOhm @ 195A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IPZ60R099P6FKSA1

Infineon Technologies

MOSFET N-CH 600V TO247-4

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封裝: TO-247-4

庫存6,432

MOSFET (Metal Oxide)

600V

37.9A (Tc)

10V

4.5V @ 1.21mA

70nC @ 10V

3330pF @ 100V

±20V

-

278W (Tc)

99 mOhm @ 14.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IPC60R125CPX1SA4

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存2,352

-

IPW60R080P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存5,600

-

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIPC69N65C3X1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,232	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW65R065C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO-247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存3,552	MOSFET (Metal Oxide)	650V	33A (Tc)	10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	±20V	-	171W (Tc)	65 mOhm @ 17.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPZ60R060C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 35A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封裝: TO-247-4	庫存3,056	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	4V @ 800µA	68nC @ 10V	2850pF @ 400V	±20V	-	162W (Tc)	60 mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IPW60R060C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 35A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存4,192	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	4V @ 800µA	68nC @ 10V	2850pF @ 400V	±20V	-	162W (Tc)	60 mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
AUIRFP2907	Infineon Technologies	MOSFET N-CH 75V 90A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 470W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 125A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封裝: TO-247-3	庫存4,672	MOSFET (Metal Oxide)	75V	90A (Tc)	10V	4V @ 250µA	620nC @ 10V	13000pF @ 25V	±20V	-	470W (Tc)	4.5 mOhm @ 125A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP7718PBF	Infineon Technologies	MOSFET N CH 75V 195A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 830nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 29550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封裝: TO-247-3	庫存6,448	MOSFET (Metal Oxide)	75V	195A (Tc)	6V, 10V	3.7V @ 250µA	830nC @ 10V	29550pF @ 25V	±20V	-	517W (Tc)	1.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPW60R099CPAFKSA1	Infineon Technologies	MOSFET N-CH 650V 31A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存2,144	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	105 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPT60R050G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 44A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	封裝: 8-PowerSFN	庫存3,520	MOSFET (Metal Oxide)	650V	44A (Tc)	10V	4V @ 800µA	68nC @ 10V	2670pF @ 400V	±20V	-	245W (Tc)	50 mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IPW65R110CFDAFKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存4,848	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	277.8W (Tc)	110 mOhm @ 12.7A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPP65R065C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存3,184	MOSFET (Metal Oxide)	650V	33A (Tc)	10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	±20V	-	171W (Tc)	65 mOhm @ 17.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPA65R065C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存5,328	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	±20V	-	34W (Tc)	65 mOhm @ 17.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPZ60R070P6FKSA1	Infineon Technologies	MOSFET N-CH 600V TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 20.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封裝: TO-247-4	庫存7,024	MOSFET (Metal Oxide)	600V	53.5A (Tc)	10V	4.5V @ 1.72mA	100nC @ 10V	4750pF @ 100V	±20V	-	391W (Tc)	70 mOhm @ 20.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IPZ65R095C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封裝: TO-247-4	庫存2,560	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 590µA	45nC @ 10V	2140pF @ 400V	±20V	-	128W (Tc)	95 mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IPC65R070C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,824	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW60R060P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,744	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIPC44N50C3X1SA2	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存6,592	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R060C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 35A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存3,072	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	4V @ 800µA	68nC @ 10V	2850pF @ 400V	±20V	-	162W (Tc)	60 mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPA60R060C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 16A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存3,488	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 800µA	68nC @ 10V	2850pF @ 400V	±20V	-	34W (Tc)	60 mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IPW80R290C3AFKSA1	Infineon Technologies	MOSFET N-CH 800V TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存6,160	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFS4228PBF	Infineon Technologies	MOSFET N-CH 150V 83A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,312	MOSFET (Metal Oxide)	150V	83A (Tc)	10V	5V @ 250µA	107nC @ 10V	4530pF @ 25V	±30V	-	330W (Tc)	15 mOhm @ 33A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP410N30NAKSA1	Infineon Technologies	MOSFET N-CH TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存7,952	MOSFET (Metal Oxide)	300V	44A (Tc)	10V	4V @ 270µA	87nC @ 10V	7180pF @ 100V	±20V	-	300W (Tc)	41 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
AUIRFP2602	Infineon Technologies	MOSFET N-CH 24V 180A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	封裝: TO-247-3	庫存6,624	MOSFET (Metal Oxide)	24V	180A (Tc)	10V	4V @ 250µA	390nC @ 10V	11220pF @ 25V	±20V	-	380W (Tc)	1.6 mOhm @ 180A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD	TO-247-3
SPW24N60CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 21.7A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 185 mOhm @ 15.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存5,840	MOSFET (Metal Oxide)	650V	21.7A (Tc)	10V	5V @ 1.2mA	143nC @ 10V	3160pF @ 25V	±20V	-	240W (Tc)	185 mOhm @ 15.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPB65R065C7ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,896	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	4.5V @ 200µA	12nC @ 10V	557pF @ 100V	±20V	-	171W (Tc)	600 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFP4004	Infineon Technologies	MOSFET N-CH 40V 350A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封裝: TO-247-3	庫存6,208	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	4V @ 250µA	330nC @ 10V	8920pF @ 25V	±20V	-	380W (Tc)	1.7 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPZ60R099P6FKSA1	Infineon Technologies	MOSFET N-CH 600V TO247-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封裝: TO-247-4	庫存6,432	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	4.5V @ 1.21mA	70nC @ 10V	3330pF @ 100V	±20V	-	278W (Tc)	99 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IPC60R125CPX1SA4	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存2,352	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW60R080P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存5,600	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-