頁 15 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

SPD07N60S5BTMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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MOSFET (Metal Oxide)

600 V

7.3A (Tc)

10V

5.5V @ 350µA

35 nC @ 10 V

970 pF @ 25 V

±20V

-

83W (Tc)

600mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPT020N10N5ATMA1

Infineon Technologies

MOSFET N-CH 100V 31A/260A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 273W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封裝: -

庫存18,603

MOSFET (Metal Oxide)

100 V

31A (Ta), 260A (Tc)

6V, 10V

3.8V @ 202µA

152 nC @ 10 V

11000 pF @ 50 V

±20V

-

273W (Tc)

2mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IRF60SC241ARMA1

Infineon Technologies

MOSFET N-CH 60V 360A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

封裝: -

庫存6,351

MOSFET (Metal Oxide)

60 V

360A (Tc)

6V, 10V

3.7V @ 250µA

388 nC @ 10 V

16000 pF @ 30 V

±20V

-

2.4W (Ta), 417W (Tc)

1.3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7

TO-263-7, D2PAK (6 Leads + Tab)

IPP90R340C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 15A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: -

庫存1,344

MOSFET (Metal Oxide)

900 V

15A (Tc)

10V

3.5V @ 1mA

94 nC @ 10 V

2400 pF @ 100 V

±20V

-

208W (Tc)

340mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IAUC100N10S5L040ATMA1

Infineon Technologies

MOSFET N-CH 100V 100A 8TDSON-34

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

封裝: -

庫存13,965

MOSFET (Metal Oxide)

100 V

100A (Tc)

4.5V, 10V

2V @ 90µA

78 nC @ 10 V

5200 pF @ 50 V

±20V

-

167W (Tc)

4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

IPW60R145CFD7XKSA1

Infineon Technologies

MOSFET HIGH POWER

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: -

封裝: -

庫存42

MOSFET (Metal Oxide)

-

16A (Tc)

-

Surface Mount

-

IQE008N03LM5CGATMA1

Infineon Technologies

TRENCH <= 40V PG-TTFN-9

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PG-TTFN-9-1
Package / Case: 8-PowerTDFN

封裝: -

庫存486

MOSFET (Metal Oxide)

30 V

27A (Ta), 253A (Tc)

4.5V, 10V

2V @ 250µA

64 nC @ 10 V

5700 pF @ 15 V

±16V

-

2.1W (Ta), 89W (Tc)

0.85mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount, Wettable Flank

PG-TTFN-9-1

8-PowerTDFN

ITD50N04S4L04ATMA1

Infineon Technologies

MOSFET N-CH TO252-5

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

IPW65R050CFD7AXKSA1

Infineon Technologies

MOSFET N-CH 650V 45A TO247-3-41

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

封裝: -

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MOSFET (Metal Oxide)

650 V

45A (Tc)

10V

4.5V @ 1.24mA

102 nC @ 10 V

4975 pF @ 400 V

±20V

-

227W (Tc)

50mOhm @ 24.8A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

IPLU300N04S4R7XTMA2

Infineon Technologies

MOSFET N-CH 40V 300A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封裝: -

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MOSFET (Metal Oxide)

40 V

300A (Tc)

10V

4V @ 230µA

287 nC @ 10 V

22945 pF @ 25 V

±20V

-

429W (Tc)

0.76mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IRF3717TRPBF-1

Infineon Technologies

MOSFET N-CH 20V 20A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: -

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MOSFET (Metal Oxide)

20 V

20A (Ta)

4.5V, 10V

2.45V @ 250µA

33 nC @ 4.5 V

2890 pF @ 10 V

±20V

-

2.5W (Ta)

4.4mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

ISZ15EP15LMATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存14,913

-

IPB60R125CFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 18A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

庫存2,685

MOSFET (Metal Oxide)

600 V

18A (Tc)

10V

4.5V @ 390µA

36 nC @ 10 V

1503 pF @ 400 V

±20V

-

92W (Tc)

125mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPP60R600C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 7.3A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

600 V

7.3A (Tc)

10V

3.5V @ 200µA

20.5 nC @ 10 V

440 pF @ 100 V

±20V

-

63W (Tc)

600mOhm @ 2.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

SPD03N60C3BTMA1

Infineon Technologies

MOSFET N-CH 650V 3.2A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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MOSFET (Metal Oxide)

650 V

3.2A (Tc)

10V

3.9V @ 135µA

17 nC @ 10 V

400 pF @ 25 V

±20V

-

38W (Tc)

1.4Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPB60R199CPATMA1

Infineon Technologies

MOSFET N-CH 600V 16A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

庫存9,780

MOSFET (Metal Oxide)

600 V

16A (Tc)

10V

3.5V @ 660µA

43 nC @ 10 V

1520 pF @ 100 V

±20V

-

139W (Tc)

199mOhm @ 9.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSC027N10NS5ATMA1

Infineon Technologies

MOSFET N-CH 100V 23A/100A TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

封裝: -

庫存22,176

MOSFET (Metal Oxide)

100 V

23A (Ta), 100A (Tc)

6V, 10V

3.8V @ 146µA

111 nC @ 10 V

8200 pF @ 50 V

±20V

-

3W (Ta), 214W (Tc)

2.7mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-3

8-PowerTDFN

IRF9952TRPBFXTMA1

Infineon Technologies

PLANAR 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

IAUC120N04S6L005ATMA1

Infineon Technologies

IAUC120N04S6L005ATMA1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-53
Package / Case: 8-PowerTDFN

封裝: -

庫存12,570

MOSFET (Metal Oxide)

40 V

120A (Tj)

4.5V, 10V

2V @ 130µA

177 nC @ 10 V

11203 pF @ 25 V

±16V

-

187W (Tc)

0.55mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-53

8-PowerTDFN

IPP65R145CFD7AAKSA1

Infineon Technologies

AUTOMOTIVE_COOLMOS PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

650 V

17A (Tc)

10V

4.5V @ 420µA

36 nC @ 10 V

1694 pF @ 400 V

±20V

-

98W (Tc)

145mOhm @ 8.5A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

BSF030NE2LQXUMA1

Infineon Technologies

MOSFET N-CH 25V 24A/75A 2WDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2, CanPAK M™
Package / Case: 3-WDSON

封裝: -

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MOSFET (Metal Oxide)

25 V

24A (Ta), 75A (Tc)

4.5V, 10V

2V @ 250µA

23 nC @ 10 V

1700 pF @ 12 V

±20V

-

2.2W (Ta), 28W (Tc)

3mOhm @ 30A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

MG-WDSON-2, CanPAK M™

3-WDSON

IPC60R190E6UNSAWNX6SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

BSC883N03MSG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 34 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封裝: -

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MOSFET (Metal Oxide)

34 V

19A (Ta), 98A (Tc)

4.5V, 10V

2V @ 250µA

41 nC @ 10 V

3200 pF @ 15 V

±20V

-

2.5W (Ta), 57W (Tc)

3.8mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPP60R125C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 30A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: -

庫存1,413

MOSFET (Metal Oxide)

600 V

30A (Tc)

10V

3.5V @ 960µA

96 nC @ 10 V

2127 pF @ 100 V

±20V

-

219W (Tc)

125mOhm @ 14.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

SPA06N80C3XKSA1

Infineon Technologies

MOSFET N-CH 800V 6A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

封裝: -

庫存41,127

MOSFET (Metal Oxide)

800 V

6A (Tc)

10V

3.9V @ 250µA

41 nC @ 10 V

785 pF @ 100 V

±20V

-

39W (Tc)

900mOhm @ 3.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

IAUA200N04S5N010ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-1
Package / Case: 5-PowerSFN

封裝: -

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MOSFET (Metal Oxide)

40 V

200A (Tc)

7V, 10V

3.4V @ 100µA

132 nC @ 10 V

7650 pF @ 25 V

±20V

-

167W (Tc)

1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-1

5-PowerSFN

IMDQ75R140M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封裝: -

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SiC (Silicon Carbide Junction Transistor)

750 V

17A (Tc)

15V, 20V

5.6V @ 1.7mA

12 nC @ 18 V

351 pF @ 500 V

+23V, -5V

-

100W (Tc)

129mOhm @ 4.7A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

ISC037N12NM6ATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR,120V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

封裝: -

庫存14,970

MOSFET (Metal Oxide)

120 V

19.2A (Ta), 163A (Tc)

8V, 10V

3.6V @ 111µA

58 nC @ 10 V

4300 pF @ 60 V

±20V

-

3W (Ta), 214W (Tc)

3.7mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD07N60S5BTMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	5.5V @ 350µA	35 nC @ 10 V	970 pF @ 25 V	±20V	-	83W (Tc)	600mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPT020N10N5ATMA1	Infineon Technologies	MOSFET N-CH 100V 31A/260A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 202µA Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 273W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封裝: -	庫存18,603	MOSFET (Metal Oxide)	100 V	31A (Ta), 260A (Tc)	6V, 10V	3.8V @ 202µA	152 nC @ 10 V	11000 pF @ 50 V	±20V	-	273W (Tc)	2mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IRF60SC241ARMA1	Infineon Technologies	MOSFET N-CH 60V 360A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 417W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	封裝: -	庫存6,351	MOSFET (Metal Oxide)	60 V	360A (Tc)	6V, 10V	3.7V @ 250µA	388 nC @ 10 V	16000 pF @ 30 V	±20V	-	2.4W (Ta), 417W (Tc)	1.3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2PAK (6 Leads + Tab)
IPP90R340C3XKSA2	Infineon Technologies	MOSFET N-CH 900V 15A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: -	庫存1,344	MOSFET (Metal Oxide)	900 V	15A (Tc)	10V	3.5V @ 1mA	94 nC @ 10 V	2400 pF @ 100 V	±20V	-	208W (Tc)	340mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IAUC100N10S5L040ATMA1	Infineon Technologies	MOSFET N-CH 100V 100A 8TDSON-34 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	封裝: -	庫存13,965	MOSFET (Metal Oxide)	100 V	100A (Tc)	4.5V, 10V	2V @ 90µA	78 nC @ 10 V	5200 pF @ 50 V	±20V	-	167W (Tc)	4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
IPW60R145CFD7XKSA1	Infineon Technologies	MOSFET HIGH POWER FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	封裝: -	庫存42	MOSFET (Metal Oxide)	-	16A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	-	-
IQE008N03LM5CGATMA1	Infineon Technologies	TRENCH <= 40V PG-TTFN-9 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PG-TTFN-9-1 Package / Case: 8-PowerTDFN	封裝: -	庫存486	MOSFET (Metal Oxide)	30 V	27A (Ta), 253A (Tc)	4.5V, 10V	2V @ 250µA	64 nC @ 10 V	5700 pF @ 15 V	±16V	-	2.1W (Ta), 89W (Tc)	0.85mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PG-TTFN-9-1	8-PowerTDFN
ITD50N04S4L04ATMA1	Infineon Technologies	MOSFET N-CH TO252-5 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW65R050CFD7AXKSA1	Infineon Technologies	MOSFET N-CH 650V 45A TO247-3-41 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 1.24mA	102 nC @ 10 V	4975 pF @ 400 V	±20V	-	227W (Tc)	50mOhm @ 24.8A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IPLU300N04S4R7XTMA2	Infineon Technologies	MOSFET N-CH 40V 300A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	300A (Tc)	10V	4V @ 230µA	287 nC @ 10 V	22945 pF @ 25 V	±20V	-	429W (Tc)	0.76mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IRF3717TRPBF-1	Infineon Technologies	MOSFET N-CH 20V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: -	Request a Quote	MOSFET (Metal Oxide)	20 V	20A (Ta)	4.5V, 10V	2.45V @ 250µA	33 nC @ 4.5 V	2890 pF @ 10 V	±20V	-	2.5W (Ta)	4.4mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
ISZ15EP15LMATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存14,913	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB60R125CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 18A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	庫存2,685	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4.5V @ 390µA	36 nC @ 10 V	1503 pF @ 400 V	±20V	-	92W (Tc)	125mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP60R600C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	3.5V @ 200µA	20.5 nC @ 10 V	440 pF @ 100 V	±20V	-	63W (Tc)	600mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
SPD03N60C3BTMA1	Infineon Technologies	MOSFET N-CH 650V 3.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	3.2A (Tc)	10V	3.9V @ 135µA	17 nC @ 10 V	400 pF @ 25 V	±20V	-	38W (Tc)	1.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB60R199CPATMA1	Infineon Technologies	MOSFET N-CH 600V 16A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	庫存9,780	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	3.5V @ 660µA	43 nC @ 10 V	1520 pF @ 100 V	±20V	-	139W (Tc)	199mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC027N10NS5ATMA1	Infineon Technologies	MOSFET N-CH 100V 23A/100A TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 146µA Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	封裝: -	庫存22,176	MOSFET (Metal Oxide)	100 V	23A (Ta), 100A (Tc)	6V, 10V	3.8V @ 146µA	111 nC @ 10 V	8200 pF @ 50 V	±20V	-	3W (Ta), 214W (Tc)	2.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
IRF9952TRPBFXTMA1	Infineon Technologies	PLANAR 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUC120N04S6L005ATMA1	Infineon Technologies	IAUC120N04S6L005ATMA1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-53 Package / Case: 8-PowerTDFN	封裝: -	庫存12,570	MOSFET (Metal Oxide)	40 V	120A (Tj)	4.5V, 10V	2V @ 130µA	177 nC @ 10 V	11203 pF @ 25 V	±16V	-	187W (Tc)	0.55mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-53	8-PowerTDFN
IPP65R145CFD7AAKSA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 420µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	650 V	17A (Tc)	10V	4.5V @ 420µA	36 nC @ 10 V	1694 pF @ 400 V	±20V	-	98W (Tc)	145mOhm @ 8.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
BSF030NE2LQXUMA1	Infineon Technologies	MOSFET N-CH 25V 24A/75A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M™ Package / Case: 3-WDSON	封裝: -	Request a Quote	MOSFET (Metal Oxide)	25 V	24A (Ta), 75A (Tc)	4.5V, 10V	2V @ 250µA	23 nC @ 10 V	1700 pF @ 12 V	±20V	-	2.2W (Ta), 28W (Tc)	3mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M™	3-WDSON
IPC60R190E6UNSAWNX6SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC883N03MSG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	34 V	19A (Ta), 98A (Tc)	4.5V, 10V	2V @ 250µA	41 nC @ 10 V	3200 pF @ 15 V	±20V	-	2.5W (Ta), 57W (Tc)	3.8mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPP60R125C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 30A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: -	庫存1,413	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	3.5V @ 960µA	96 nC @ 10 V	2127 pF @ 100 V	±20V	-	219W (Tc)	125mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
SPA06N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 6A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	封裝: -	庫存41,127	MOSFET (Metal Oxide)	800 V	6A (Tc)	10V	3.9V @ 250µA	41 nC @ 10 V	785 pF @ 100 V	±20V	-	39W (Tc)	900mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
IAUA200N04S5N010ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Tc)	7V, 10V	3.4V @ 100µA	132 nC @ 10 V	7650 pF @ 25 V	±20V	-	167W (Tc)	1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
IMDQ75R140M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs(th) (Max) @ Id: 5.6V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封裝: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	750 V	17A (Tc)	15V, 20V	5.6V @ 1.7mA	12 nC @ 18 V	351 pF @ 500 V	+23V, -5V	-	100W (Tc)	129mOhm @ 4.7A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
ISC037N12NM6ATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR,120V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 111µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	封裝: -	庫存14,970	MOSFET (Metal Oxide)	120 V	19.2A (Ta), 163A (Tc)	8V, 10V	3.6V @ 111µA	58 nC @ 10 V	4300 pF @ 60 V	±20V	-	3W (Ta), 214W (Tc)	3.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN