頁 110 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單 | 黑森爾電子
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Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

記錄 8,381
頁  110/300
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封裝
庫存
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSL202SNL6327HTSA1
Infineon Technologies

MOSFET N-CH 20V 7.5A TSOP-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSOP6-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存2,928
MOSFET (Metal Oxide)
20V
7.5A (Ta)
2.5V, 4.5V
1.2V @ 30µA
8.7nC @ 4.5V
1147pF @ 10V
±12V
-
2W (Ta)
22 mOhm @ 7.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSOP6-6
SOT-23-6 Thin, TSOT-23-6
BSC0909NSATMA1
Infineon Technologies

MOSFET N-CH 34V 44A 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 34V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存3,008
MOSFET (Metal Oxide)
34V
12A (Ta), 44A (Tc)
4.5V, 10V
2V @ 250µA
15nC @ 10V
1110pF @ 15V
±20V
-
2.5W (Ta), 27W (Tc)
9.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
hot IRLHS2242TRPBF
Infineon Technologies

MOSFET P-CH 20V 15A 2X2 PQFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 8.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerVDFN
封裝: 6-PowerVDFN
庫存119,160
MOSFET (Metal Oxide)
20V
7.2A (Ta), 15A (Tc)
2.5V, 4.5V
1.1V @ 10µA
12nC @ 10V
877pF @ 10V
±12V
-
2.1W (Ta), 9.6W (Tc)
31 mOhm @ 8.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-PQFN (2x2)
6-PowerVDFN
IPD50R1K4CEBTMA1
Infineon Technologies

MOSFET N-CH 500V 3.1A PG-TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,744
MOSFET (Metal Oxide)
500V
3.1A (Tc)
13V
3.5V @ 70µA
1nC @ 10V
178pF @ 100V
±20V
-
25W (Tc)
1.4 Ohm @ 900mA, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
BSP92PH6327XTSA1
Infineon Technologies

MOSFET P-CH 250V 260MA 4SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存19,356
MOSFET (Metal Oxide)
250V
260mA (Ta)
2.8V, 10V
2V @ 130µA
5.4nC @ 10V
104pF @ 25V
±20V
-
1.8W (Ta)
12 Ohm @ 260mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
IPD60R2K1CEAUMA1
Infineon Technologies

MOSFET N-CH 600V 2.3A TO-252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,216
MOSFET (Metal Oxide)
600V
2.3A (Tc)
10V
3.5V @ 60µA
6.7nC @ 10V
140pF @ 100V
±20V
-
38W (Tc)
2.1 Ohm @ 760mA, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF7606TR
Infineon Technologies

MOSFET P-CH 30V 3.6A MICRO8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8?
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
庫存132,228
MOSFET (Metal Oxide)
30V
3.6A (Ta)
4.5V, 10V
1V @ 250µA
30nC @ 10V
520pF @ 25V
±20V
-
1.8W (Ta)
90 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro8?
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
hot IRLMS6702TRPBF
Infineon Technologies

MOSFET P-CH 20V 2.4A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(TSOP-6)
  • Package / Case: SOT-23-6
封裝: SOT-23-6
庫存1,693,260
MOSFET (Metal Oxide)
20V
2.4A (Ta)
2.7V, 4.5V
700mV @ 250µA
8.8nC @ 4.5V
210pF @ 15V
±12V
-
1.7W (Ta)
200 mOhm @ 1.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro6?(TSOP-6)
SOT-23-6
BSL606SNH6327XTSA1
Infineon Technologies

MOSFET N-CH 60V 4.5A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSOP6-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存4,976
MOSFET (Metal Oxide)
60V
4.5A (Ta)
4.5V, 10V
2.3V @ 15µA
5.6nC @ 5V
657pF @ 25V
±20V
-
2W (Ta)
60 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSOP6-6
SOT-23-6 Thin, TSOT-23-6
hot SPD03N60C3
Infineon Technologies

MOSFET N-CH 650V 3.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 135µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存1,777,188
MOSFET (Metal Oxide)
650V
3.2A (Tc)
10V
3.9V @ 135µA
17nC @ 10V
400pF @ 25V
±20V
-
38W (Tc)
1.4 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IPD60R600E6
Infineon Technologies

MOSFET N-CH 600V 7.3A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存70,884
MOSFET (Metal Oxide)
600V
7.3A (Tc)
10V
3.5V @ 200µA
20.5nC @ 10V
440pF @ 100V
±20V
-
63W (Tc)
600 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFH3707TRPBF
Infineon Technologies

MOSFET N-CH 30V 12A PQFN56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (3x3)
  • Package / Case: 8-PowerVDFN
封裝: 8-PowerVDFN
庫存2,055,156
MOSFET (Metal Oxide)
30V
12A (Ta), 29A (Tc)
4.5V, 10V
2.35V @ 25µA
8.1nC @ 4.5V
755pF @ 15V
±20V
-
2.8W (Ta)
12.4 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (3x3)
8-PowerVDFN
BSR606NH6327XTSA1
Infineon Technologies

MOSFET N-CH 60V 2.3A SC59

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存4,128
MOSFET (Metal Oxide)
60V
2.3A (Ta)
4.5V, 10V
2.3V @ 15µA
5.6nC @ 5V
657pF @ 25V
±20V
-
500mW (Ta)
60 mOhm @ 2.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SC-59
TO-236-3, SC-59, SOT-23-3
IPD50R3K0CEAUMA1
Infineon Technologies

MOSFET N-CH 500V 1.7A PG-TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,872
MOSFET (Metal Oxide)
500V
1.7A (Tc)
13V
3.5V @ 30µA
4.3nC @ 10V
84pF @ 100V
±20V
-
26W (Tc)
3 Ohm @ 400mA, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF5801TRPBF
Infineon Technologies

MOSFET N-CH 200V 600MA 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 360mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(TSOP-6)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存274,368
MOSFET (Metal Oxide)
200V
600mA (Ta)
10V
5.5V @ 250µA
3.9nC @ 10V
88pF @ 25V
±30V
-
2W (Ta)
2.2 Ohm @ 360mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro6?(TSOP-6)
SOT-23-6 Thin, TSOT-23-6
BSS205NH6327XTSA1
Infineon Technologies

MOSFET N-CH 20V 2.5A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存6,480
MOSFET (Metal Oxide)
20V
2.5A (Ta)
2.5V, 4.5V
1.2V @ 11µA
3.2nC @ 4.5V
419pF @ 10V
±12V
-
500mW (Ta)
50 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3
IPN60R2K1CEATMA1
Infineon Technologies

MOSFET NCH 600V 3.7A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 800mA, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: SOT-223-3
封裝: SOT-223-3
庫存2,080
MOSFET (Metal Oxide)
600V
3.7A (Tc)
10V
3.5V @ 60µA
6.7nC @ 10V
140pF @ 100V
±20V
Super Junction
5W (Tc)
2.1 Ohm @ 800mA, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
SOT-223-3
hot IRF7422D2TRPBF
Infineon Technologies

MOSFET P-CH 20V 4.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存624,000
MOSFET (Metal Oxide)
20V
4.3A (Ta)
2.7V, 4.5V
700mV @ 250µA
22nC @ 4.5V
610pF @ 15V
±12V
Schottky Diode (Isolated)
2W (Ta)
90 mOhm @ 2.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRLML6401GTRPBF
Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存647,268
MOSFET (Metal Oxide)
12V
4.3A (Ta)
1.8V, 4.5V
950mV @ 250µA
15nC @ 5V
830pF @ 10V
±8V
-
1.3W (Ta)
50 mOhm @ 4.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRFTS8342TRPBF
Infineon Technologies

MOSFET N-CH 30V 8.2A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
封裝: SOT-23-6
庫存36,000
MOSFET (Metal Oxide)
30V
8.2A (Ta)
4.5V, 10V
2.35V @ 25µA
4.8nC @ 4.5V
560pF @ 25V
±20V
-
2W (Ta)
19 mOhm @ 8.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
IPN60R3K4CEATMA1
Infineon Technologies

MOSFET NCH 600V 2.6A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存7,184
MOSFET (Metal Oxide)
600V
2.6A (Tc)
10V
3.5V @ 40µA
4.6nC @ 10V
93pF @ 100V
±20V
Super Junction
5W (Tc)
3.4 Ohm @ 500mA, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
BSR316PH6327XTSA1
Infineon Technologies

MOSFET P-CH 100V 360MA SC-59-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 360mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,416
MOSFET (Metal Oxide)
100V
360mA (Ta)
4.5V, 10V
1V @ 170µA
7nC @ 10V
165pF @ 25V
±20V
-
500mW (Tc)
1.8 Ohm @ 360mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SC-59
TO-236-3, SC-59, SOT-23-3
IPD50R650CE
Infineon Technologies

MOSFET N CH 500V 6.1A PG-TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 342pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 1.8A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存18,840
MOSFET (Metal Oxide)
500V
6.1A (Tc)
13V
3.5V @ 150µA
15nC @ 10V
342pF @ 100V
±20V
-
47W (Tc)
650 mOhm @ 1.8A, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF7421D1TRPBF
Infineon Technologies

MOSFET N-CH 30V 5.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存450,324
MOSFET (Metal Oxide)
30V
5.8A (Ta)
4.5V, 10V
1V @ 250µA
27nC @ 10V
510pF @ 25V
±20V
Schottky Diode (Isolated)
2W (Ta)
35 mOhm @ 4.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF7324D1TRPBF
Infineon Technologies

MOSFET P-CH 20V 2.2A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存93,384
MOSFET (Metal Oxide)
20V
2.2A (Ta)
2.7V, 4.5V
700mV @ 250µA
7.8nC @ 4.5V
260pF @ 15V
±12V
Schottky Diode (Isolated)
2W (Ta)
270 mOhm @ 1.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
BSR302NL6327HTSA1
Infineon Technologies

MOSFET N-CH 30V 3.7A SC-59

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存46,476
MOSFET (Metal Oxide)
30V
3.7A (Ta)
4.5V, 10V
2V @ 30µA
6.6nC @ 5V
750pF @ 15V
±20V
-
500mW (Ta)
23 mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SC-59
TO-236-3, SC-59, SOT-23-3
BSD316SNL6327XT
Infineon Technologies

MOSFET N-CH 30V 1.4A SOT-363

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT363-6
  • Package / Case: 6-VSSOP, SC-88, SOT-363
封裝: 6-VSSOP, SC-88, SOT-363
庫存23,538
MOSFET (Metal Oxide)
30V
1.4A (Ta)
4.5V, 10V
2V @ 3.7µA
0.6nC @ 5V
94pF @ 15V
±20V
-
500mW (Ta)
160 mOhm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT363-6
6-VSSOP, SC-88, SOT-363
SN7002NH6327XTSA1
Infineon Technologies

MOSFET N-CH 60V 200MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 26µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存25,548
MOSFET (Metal Oxide)
60V
200mA (Ta)
4.5V, 10V
1.8V @ 26µA
1.5nC @ 10V
45pF @ 25V
±20V
-
360mW (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3