頁 17 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 陣列

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7350TRPBF	Infineon Technologies	MOSFET N/P-CH 100V 2.1A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存263,940	Standard	100V	2.1A, 1.5A	210 mOhm @ 2.1A, 10V	4V @ 250µA	28nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7338TRPBF	Infineon Technologies	MOSFET N/P-CH 12V 6.3A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存956,268	Logic Level Gate	12V	6.3A, 3A	34 mOhm @ 6A, 4.5V	1.5V @ 250µA	8.6nC @ 4.5V	640pF @ 9V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF5852TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 2.7A 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封裝: SOT-23-6 Thin, TSOT-23-6	庫存187,080	Logic Level Gate	20V	2.7A	90 mOhm @ 2.7A, 4.5V	1.25V @ 250µA	6nC @ 4.5V	400pF @ 15V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF5851TRPBF	Infineon Technologies	MOSFET N/P-CH 20V 2.7A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封裝: SOT-23-6 Thin, TSOT-23-6	庫存463,020	Logic Level Gate	20V	2.7A, 2.2A	90 mOhm @ 2.7A, 4.5V	1.25V @ 250µA	6nC @ 4.5V	400pF @ 15V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF5850TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 2.2A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封裝: SOT-23-6 Thin, TSOT-23-6	庫存72,756	Logic Level Gate	20V	2.2A	135 mOhm @ 2.2A, 4.5V	1.2V @ 250µA	5.4nC @ 4.5V	320pF @ 15V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF5810TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 2.9A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封裝: SOT-23-6 Thin, TSOT-23-6	庫存385,164	Logic Level Gate	20V	2.9A	90 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	9.6nC @ 4.5V	650pF @ 16V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF8910GPBF	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,088	Logic Level Gate	20V	10A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF6723M2DTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 15A DIRECTFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Power - Max: 2.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MA Supplier Device Package: DIRECTFET? MA	封裝: DirectFET? Isometric MA	庫存45,684	Logic Level Gate	30V	15A	6.6 mOhm @ 15A, 10V	2.35V @ 25µA	14nC @ 4.5V	1380pF @ 15V	2.7W	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET? Isometric MA	DIRECTFET? MA
IRF9362PBF	Infineon Technologies	MOSFET 2P-CH 30V 8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,648	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.4V @ 25µA	39nC @ 10V	1300pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF8910GTRPBF	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存564,096	Logic Level Gate	20V	10A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF8852TRPBF	Infineon Technologies	MOSFET 2N-CH 25V 7.8A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1151pF @ 20V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存11,304	Logic Level Gate	25V	7.8A	11.3 mOhm @ 7.8A, 10V	2.35V @ 25µA	9.5nC @ 4.5V	1151pF @ 20V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF6723M2DTR1P	Infineon Technologies	MOSFET 2N-CH 30V 15A DIRECTFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Power - Max: 2.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MA Supplier Device Package: DIRECTFET? MA	封裝: DirectFET? Isometric MA	庫存5,808	Logic Level Gate	30V	15A	6.6 mOhm @ 15A, 10V	2.35V @ 25µA	14nC @ 4.5V	1380pF @ 15V	2.7W	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET? Isometric MA	DIRECTFET? MA
IRFI4019HG-117P	Infineon Technologies	MOSFET 2N-CH 150V 8.7A TO-220FP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack (Formed Leads) Supplier Device Package: TO-220-5 Full-Pak	封裝: TO-220-5 Full Pack (Formed Leads)	庫存48,108	Standard	150V	8.7A	95 mOhm @ 5.2A, 10V	4.9V @ 50µA	20nC @ 10V	810pF @ 25V	18W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack (Formed Leads)	TO-220-5 Full-Pak
IPG20N06S3L-35	Infineon Technologies	MOSFET 2N-CH 55V 20A TDSON-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.2V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V Power - Max: 30W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封裝: 8-PowerVDFN	庫存37,920	Logic Level Gate	55V	20A	35 mOhm @ 11A, 10V	2.2V @ 15µA	23nC @ 10V	1730pF @ 25V	30W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
IPG20N06S3L-23	Infineon Technologies	MOSFET 2N-CH 55V 20A TDSON-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 23 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Power - Max: 45W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封裝: 8-PowerVDFN	庫存5,392	Logic Level Gate	55V	20A	23 mOhm @ 16A, 10V	2.2V @ 20µA	42nC @ 10V	2950pF @ 25V	45W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
IPG15N06S3L-45	Infineon Technologies	MOSFET 2N-CH 55V 15A TDSON-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Power - Max: 21W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封裝: 8-PowerVDFN	庫存3,920	Logic Level Gate	55V	15A	45 mOhm @ 10A, 10V	2.2V @ 10µA	20nC @ 10V	1420pF @ 25V	21W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
BSL314PEL6327HTSA1	Infineon Technologies	MOSFET 2P-CH 30V 1.5A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 6.3µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存6,848	Logic Level Gate	30V	1.5A	140 mOhm @ 1.5A, 10V	2V @ 6.3µA	2.9nC @ 10V	294pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSD840N L6327	Infineon Technologies	MOSFET 2N-CH 20V 0.88A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V Vgs(th) (Max) @ Id: 750mV @ 1.6µA Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存7,312	Logic Level Gate	20V	880mA	400 mOhm @ 880mA, 2.5V	750mV @ 1.6µA	0.26nC @ 2.5V	78pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
BSO330N02KGFUMA1	Infineon Technologies	MOSFET 2N-CH 20V 5.4A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,072	Logic Level Gate	20V	5.4A	30 mOhm @ 6.5A, 4.5V	1.2V @ 20µA	4.9nC @ 4.5V	730pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSL315PL6327HTSA1	Infineon Technologies	MOSFET 2P-CH 30V 1.5A TSOP-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存6,224	Logic Level Gate	30V	1.5A	150 mOhm @ 1.5A, 10V	2V @ 11µA	2.3nC @ 5V	282pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSL306NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 30V 2.3A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存6,976	Logic Level Gate	30V	2.3A	57 mOhm @ 2.3A, 10V	2V @ 11µA	1.6nC @ 5V	275pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSL215PL6327HTSA1	Infineon Technologies	MOSFET 2P-CH 20V 1.5A TSOP-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存2,544	Logic Level Gate	20V	1.5A	150 mOhm @ 1.5A, 4.5V	1.2V @ 11µA	3.55nC @ 4.5V	346pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSL215CL6327HTSA1	Infineon Technologies	MOSFET N/P-CH 20V 1.5A TSOP-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存4,752	Logic Level Gate	20V	1.5A	140 mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.73nC @ 4.5V	143pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSL205NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 20V 2.5A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存5,408	Logic Level Gate	20V	2.5A	50 mOhm @ 2.5A, 4.5V	1.2V @ 11µA	3.2nC @ 4.5V	419pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSD235N L6327	Infineon Technologies	MOSFET 2N-CH 20V 0.95A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存6,672	Logic Level Gate	20V	950mA	350 mOhm @ 950mA, 4.5V	1.2V @ 1.6µA	0.32nC @ 4.5V	63pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
BSL316CL6327HTSA1	Infineon Technologies	MOSFET N/P-CH 30V TSOP-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存2,528	Logic Level Gate	30V	1.4A, 1.5A	160 mOhm @ 1.4A, 10V	2V @ 3.7µA	0.6nC @ 5V	94pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSL214NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 20V 1.5A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存2,480	Logic Level Gate	20V	1.5A	140 mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.8nC @ 5V	143pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
BSD235C L6327	Infineon Technologies	MOSFET N/P-CH 20V SOT-363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存2,832	Logic Level Gate	20V	950mA, 530mA	350 mOhm @ 950mA, 4.5V	1.2V @ 1.6µA	0.34nC @ 4.5V	47pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6

IRF7350TRPBF

Infineon Technologies

MOSFET N/P-CH 100V 2.1A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存263,940

Standard

100V

2.1A, 1.5A

210 mOhm @ 2.1A, 10V

4V @ 250µA

28nC @ 10V

380pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7338TRPBF

Infineon Technologies

MOSFET N/P-CH 12V 6.3A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存956,268

Logic Level Gate

12V

6.3A, 3A

34 mOhm @ 6A, 4.5V

1.5V @ 250µA

8.6nC @ 4.5V

640pF @ 9V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF5852TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 2.7A 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封裝: SOT-23-6 Thin, TSOT-23-6

庫存187,080

Logic Level Gate

20V

2.7A

90 mOhm @ 2.7A, 4.5V

1.25V @ 250µA

6nC @ 4.5V

400pF @ 15V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF5851TRPBF

Infineon Technologies

MOSFET N/P-CH 20V 2.7A 6-TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封裝: SOT-23-6 Thin, TSOT-23-6

庫存463,020

Logic Level Gate

20V

2.7A, 2.2A

90 mOhm @ 2.7A, 4.5V

1.25V @ 250µA

6nC @ 4.5V

400pF @ 15V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF5850TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 2.2A 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封裝: SOT-23-6 Thin, TSOT-23-6

庫存72,756

Logic Level Gate

20V

2.2A

135 mOhm @ 2.2A, 4.5V

1.2V @ 250µA

5.4nC @ 4.5V

320pF @ 15V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF5810TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封裝: SOT-23-6 Thin, TSOT-23-6

庫存385,164

Logic Level Gate

20V

2.9A

90 mOhm @ 2.9A, 4.5V

1.2V @ 250µA

9.6nC @ 4.5V

650pF @ 16V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF8910GPBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,088

Logic Level Gate

20V

10A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

960pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF6723M2DTRPBF

Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric MA
Supplier Device Package: DIRECTFET? MA

封裝: DirectFET? Isometric MA

庫存45,684

Logic Level Gate

30V

15A

6.6 mOhm @ 15A, 10V

2.35V @ 25µA

14nC @ 4.5V

1380pF @ 15V

2.7W

-55°C ~ 175°C (TJ)

Surface Mount

DirectFET? Isometric MA

DIRECTFET? MA

IRF9362PBF

Infineon Technologies

MOSFET 2P-CH 30V 8A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,648

Logic Level Gate

30V

8A

21 mOhm @ 8A, 10V

2.4V @ 25µA

39nC @ 10V

1300pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF8910GTRPBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存564,096

Logic Level Gate

20V

10A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

960pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF8852TRPBF

Infineon Technologies

MOSFET 2N-CH 25V 7.8A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1151pF @ 20V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存11,304

Logic Level Gate

25V

7.8A

11.3 mOhm @ 7.8A, 10V

2.35V @ 25µA

9.5nC @ 4.5V

1151pF @ 20V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IRF6723M2DTR1P

Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric MA
Supplier Device Package: DIRECTFET? MA

封裝: DirectFET? Isometric MA

庫存5,808

Logic Level Gate

30V

15A

6.6 mOhm @ 15A, 10V

2.35V @ 25µA

14nC @ 4.5V

1380pF @ 15V

2.7W

-55°C ~ 175°C (TJ)

Surface Mount

DirectFET? Isometric MA

DIRECTFET? MA

IRFI4019HG-117P

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO-220FP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Power - Max: 18W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack (Formed Leads)
Supplier Device Package: TO-220-5 Full-Pak

封裝: TO-220-5 Full Pack (Formed Leads)

庫存48,108

Standard

150V

8.7A

95 mOhm @ 5.2A, 10V

4.9V @ 50µA

20nC @ 10V

810pF @ 25V

18W

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack (Formed Leads)

TO-220-5 Full-Pak

IPG20N06S3L-35

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Power - Max: 30W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封裝: 8-PowerVDFN

庫存37,920

Logic Level Gate

55V

20A

35 mOhm @ 11A, 10V

2.2V @ 15µA

23nC @ 10V

1730pF @ 25V

30W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

IPG20N06S3L-23

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
Power - Max: 45W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封裝: 8-PowerVDFN

庫存5,392

Logic Level Gate

55V

20A

23 mOhm @ 16A, 10V

2.2V @ 20µA

42nC @ 10V

2950pF @ 25V

45W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

IPG15N06S3L-45

Infineon Technologies

MOSFET 2N-CH 55V 15A TDSON-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
Power - Max: 21W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封裝: 8-PowerVDFN

庫存3,920

Logic Level Gate

55V

15A

45 mOhm @ 10A, 10V

2.2V @ 10µA

20nC @ 10V

1420pF @ 25V

21W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

BSL314PEL6327HTSA1

Infineon Technologies

MOSFET 2P-CH 30V 1.5A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存6,848

Logic Level Gate

30V

1.5A

140 mOhm @ 1.5A, 10V

2V @ 6.3µA

2.9nC @ 10V

294pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

BSD840N L6327

Infineon Technologies

MOSFET 2N-CH 20V 0.88A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V
Vgs(th) (Max) @ Id: 750mV @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存7,312

Logic Level Gate

20V

880mA

400 mOhm @ 880mA, 2.5V

750mV @ 1.6µA

0.26nC @ 2.5V

78pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

BSO330N02KGFUMA1

Infineon Technologies

MOSFET 2N-CH 20V 5.4A 8DSO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,072

Logic Level Gate

20V

5.4A

30 mOhm @ 6.5A, 4.5V

1.2V @ 20µA

4.9nC @ 4.5V

730pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

BSL315PL6327HTSA1

Infineon Technologies

MOSFET 2P-CH 30V 1.5A TSOP-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存6,224

Logic Level Gate

30V

1.5A

150 mOhm @ 1.5A, 10V

2V @ 11µA

2.3nC @ 5V

282pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

BSL306NL6327HTSA1

Infineon Technologies

MOSFET 2N-CH 30V 2.3A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存6,976

Logic Level Gate

30V

2.3A

57 mOhm @ 2.3A, 10V

2V @ 11µA

1.6nC @ 5V

275pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

BSL215PL6327HTSA1

Infineon Technologies

MOSFET 2P-CH 20V 1.5A TSOP-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存2,544

Logic Level Gate

20V

1.5A

150 mOhm @ 1.5A, 4.5V

1.2V @ 11µA

3.55nC @ 4.5V

346pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

BSL215CL6327HTSA1

Infineon Technologies

MOSFET N/P-CH 20V 1.5A TSOP-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存4,752

Logic Level Gate

20V

1.5A

140 mOhm @ 1.5A, 4.5V

1.2V @ 3.7µA

0.73nC @ 4.5V

143pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

BSL205NL6327HTSA1

Infineon Technologies

MOSFET 2N-CH 20V 2.5A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存5,408

Logic Level Gate

20V

2.5A

50 mOhm @ 2.5A, 4.5V

1.2V @ 11µA

3.2nC @ 4.5V

419pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

BSD235N L6327

Infineon Technologies

MOSFET 2N-CH 20V 0.95A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存6,672

Logic Level Gate

20V

950mA

350 mOhm @ 950mA, 4.5V

1.2V @ 1.6µA

0.32nC @ 4.5V

63pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

BSL316CL6327HTSA1

Infineon Technologies

MOSFET N/P-CH 30V TSOP-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存2,528

Logic Level Gate

30V

1.4A, 1.5A

160 mOhm @ 1.4A, 10V

2V @ 3.7µA

0.6nC @ 5V

94pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

BSL214NL6327HTSA1

Infineon Technologies

MOSFET 2N-CH 20V 1.5A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存2,480

Logic Level Gate

20V

1.5A

140 mOhm @ 1.5A, 4.5V

1.2V @ 3.7µA

0.8nC @ 5V

143pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

BSD235C L6327

Infineon Technologies

MOSFET N/P-CH 20V SOT-363

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存2,832

Logic Level Gate

20V

950mA, 530mA

350 mOhm @ 950mA, 4.5V

1.2V @ 1.6µA

0.34nC @ 4.5V

47pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6