頁 12 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 陣列

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRFN8459TR	Infineon Technologies	MOSFET 2N-CH 40V 50A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PQFN (5x6)	封裝: 8-PowerTDFN	庫存6,864	Standard	40V	50A	5.9 mOhm @ 40A, 10V	3.9V @ 50µA	60nC @ 10V	2250pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)
BSG0810NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 19A/39A 8TISON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 39A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V Power - Max: 2.5W Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封裝: 8-PowerTDFN	庫存6,256	Logic Level Gate, 4.5V Drive	25V	19A, 39A	3 mOhm @ 20A, 10V	2V @ 250µA	8.4nC @ 4.5V	1040pF @ 12V	2.5W	-55°C ~ 155°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
BSG0813NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 19A/33A 8TISON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 33A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V Power - Max: 2.5W Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封裝: 8-PowerTDFN	庫存3,024	Logic Level Gate, 4.5V Drive	25V	19A, 33A	3 mOhm @ 20A, 10V	2V @ 250µA	8.4nC @ 4.5V	1100pF @ 12V	2.5W	-55°C ~ 155°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
IRF8910PBF	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,376	Logic Level Gate	20V	10A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSC0910NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 16A/31A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11A, 31A Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封裝: 8-PowerTDFN	庫存3,136	Logic Level Gate, 4.5V Drive	25V	11A, 31A	4.6 mOhm @ 25A, 10V	2V @ 250µA	6.6nC @ 4.5V	4500pF @ 12V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
AUIRFN8458TR	Infineon Technologies	MOSFET 2N-CH 40V 43A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.9V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PQFN (5x6)	封裝: 8-PowerTDFN	庫存3,120	Standard	40V	43A (Tc)	10 mOhm @ 26A, 10V	3.9V @ 25µA	33nC @ 10V	1060pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)
IRF7341GTRPBF	Infineon Technologies	MOSFET N-CH 55V 5.1A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存2,720	Standard	55V	5.1A	50 mOhm @ 5.1A, 10V	1V @ 250µA (Min)	44nC @ 10V	780pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRFHM792TRPBF	Infineon Technologies	MOSFET 2N-CH 100V 2.3A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	封裝: 8-PowerVDFN	庫存167,280	Standard	100V	2.3A	195 mOhm @ 2.9A, 10V	4V @ 10µA	6.3nC @ 10V	251pF @ 25V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-PQFN (3.3x3.3), Power33
AUIRF7319QTR	Infineon Technologies	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	封裝: 8-SOIC	庫存4,400	Logic Level Gate	30V	6.5A, 4.9A	29 mOhm @ 5.8A, 10V	3V @ 250µA	33nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
AUIRF7316QTR	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	封裝: 8-SOIC	庫存3,312	Logic Level Gate	30V	-	58 mOhm @ 4.9A, 10V	3V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
IPG20N06S4L11AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封裝: 8-PowerVDFN	庫存4,096	Logic Level Gate	60V	20A	11.2 mOhm @ 17A, 10V	2.2V @ 28µA	53nC @ 10V	4020pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
IPG20N06S4L11ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封裝: 8-PowerVDFN	庫存7,744	Logic Level Gate	60V	20A	11.2 mOhm @ 17A, 10V	2.2V @ 28µA	53nC @ 10V	4020pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
AUIRF7379QTR	Infineon Technologies	MOSFET N/P-CH 30V 5.8A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,696	Logic Level Gate	30V	5.8A, 4.3A	45 mOhm @ 5.8A, 10V	3V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AUIRF7304QTR	Infineon Technologies	MOSFET 2P-CH 20V 4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	封裝: 8-SOIC	庫存4,480	Logic Level Gate	20V	4.3A	90 mOhm @ 2.2A, 4.5V	1.5V @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
AUIRF7303QTR	Infineon Technologies	MOSFET 2N-CH 30V 5.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	封裝: 8-SOIC	庫存3,520	Logic Level Gate	30V	5.3A	50 mOhm @ 2.7A, 10V	3V @ 100µA	21nC @ 10V	515pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SO
IPG20N04S4L07AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封裝: 8-PowerVDFN	庫存2,752	Logic Level Gate	40V	20A	7.2 mOhm @ 17A, 10V	2.2V @ 30µA	50nC @ 10V	3980pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
BSO203PHXUMA1	Infineon Technologies	MOSFET 2P-CH 20V 7A 8DSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,256	Logic Level Gate	20V	7A	21 mOhm @ 8.2A, 4.5V	1.2V @ 100µA	39nC @ 4.5V	3750pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
IPG20N06S415ATMA2	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封裝: 8-PowerVDFN	庫存3,808	Standard	60V	20A	15.5 mOhm @ 17A, 10V	4V @ 20µA	29nC @ 10V	2260pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
IRF7328PBF	Infineon Technologies	MOSFET 2P-CH 30V 8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存15,120	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.5V @ 250µA	78nC @ 10V	2675pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSC0923NDIATMA1	Infineon Technologies	MOSFET 2N-CH 30V 17A/32A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封裝: 8-PowerTDFN	庫存5,408	Logic Level Gate, 4.5V Drive	30V	17A, 32A	5 mOhm @ 20A, 10V	2V @ 250µA	10nC @ 4.5V	1160pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
BSC0924NDIATMA1	Infineon Technologies	MOSFET 2N-CH 30V 17A/32A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封裝: 8-PowerTDFN	庫存7,456	Logic Level Gate, 4.5V Drive	30V	17A, 32A	5 mOhm @ 20A, 10V	2V @ 250µA	10nC @ 4.5V	1160pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
AUIRF9952QTR	Infineon Technologies	MOSFET N/P-CH 30V 3.5A/2.3A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,240	Logic Level Gate	30V	3.5A, 2.3A	100 mOhm @ 2.2A, 10V	3V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IPG20N06S4L14AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封裝: 8-PowerVDFN	庫存7,104	Logic Level Gate	60V	20A	13.7 mOhm @ 17A, 10V	2.2V @ 20µA	39nC @ 10V	2890pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
IPG20N06S4L14ATMA2	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封裝: 8-PowerVDFN	庫存6,944	Logic Level Gate	60V	20A	13.7 mOhm @ 17A, 10V	2.2V @ 20µA	39nC @ 10V	2890pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
IPG20N04S4L08AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Power - Max: 54W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封裝: 8-PowerVDFN	庫存6,992	Logic Level Gate	40V	20A	8.2 mOhm @ 17A, 10V	2.2V @ 22µA	39nC @ 10V	3050pF @ 25V	54W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
IPG20N10S436AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 36 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3.5V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Power - Max: 43W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封裝: 8-PowerVDFN	庫存7,920	Standard	100V	20A	36 mOhm @ 17A, 10V	3.5V @ 16µA	15nC @ 10V	990pF @ 25V	43W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
IPG20N06S2L50AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 19µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power - Max: 51W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封裝: 8-PowerVDFN	庫存7,376	Logic Level Gate	55V	20A	50 mOhm @ 15A, 10V	2V @ 19µA	17nC @ 10V	560pF @ 25V	51W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
BSZ215CHXTMA1	Infineon Technologies	MOSFET N/P-CH 20V 8TDSON FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8-FL	封裝: 8-PowerTDFN	庫存4,944	Logic Level Gate, 2.5V Drive	20V	5.1A, 3.2A	55 mOhm @ 5.1A, 4.5V	1.4V @ 110µA	2.8nC @ 4.5V	419pF @ 10V	2.5W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PG-TSDSON-8-FL

AUIRFN8459TR

Infineon Technologies

MOSFET 2N-CH 40V 50A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)

封裝: 8-PowerTDFN

庫存6,864

Standard

40V

50A

5.9 mOhm @ 40A, 10V

3.9V @ 50µA

60nC @ 10V

2250pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PQFN (5x6)

BSG0810NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 19A/39A 8TISON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封裝: 8-PowerTDFN

庫存6,256

Logic Level Gate, 4.5V Drive

25V

19A, 39A

3 mOhm @ 20A, 10V

2V @ 250µA

8.4nC @ 4.5V

1040pF @ 12V

2.5W

-55°C ~ 155°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

BSG0813NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 19A/33A 8TISON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 33A
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封裝: 8-PowerTDFN

庫存3,024

Logic Level Gate, 4.5V Drive

25V

19A, 33A

3 mOhm @ 20A, 10V

2V @ 250µA

8.4nC @ 4.5V

1100pF @ 12V

2.5W

-55°C ~ 155°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

IRF8910PBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,376

Logic Level Gate

20V

10A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

960pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSC0910NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 16A/31A TISON8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封裝: 8-PowerTDFN

庫存3,136

Logic Level Gate, 4.5V Drive

25V

11A, 31A

4.6 mOhm @ 25A, 10V

2V @ 250µA

6.6nC @ 4.5V

4500pF @ 12V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

AUIRFN8458TR

Infineon Technologies

MOSFET 2N-CH 40V 43A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)

封裝: 8-PowerTDFN

庫存3,120

Standard

40V

43A (Tc)

10 mOhm @ 26A, 10V

3.9V @ 25µA

33nC @ 10V

1060pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PQFN (5x6)

IRF7341GTRPBF

Infineon Technologies

MOSFET N-CH 55V 5.1A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存2,720

Standard

55V

5.1A

50 mOhm @ 5.1A, 10V

1V @ 250µA (Min)

44nC @ 10V

780pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRFHM792TRPBF

Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33

封裝: 8-PowerVDFN

庫存167,280

Standard

100V

2.3A

195 mOhm @ 2.9A, 10V

4V @ 10µA

6.3nC @ 10V

251pF @ 25V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-PQFN (3.3x3.3), Power33

AUIRF7319QTR

Infineon Technologies

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

封裝: 8-SOIC

庫存4,400

Logic Level Gate

30V

6.5A, 4.9A

29 mOhm @ 5.8A, 10V

3V @ 250µA

33nC @ 10V

650pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

AUIRF7316QTR

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

封裝: 8-SOIC

庫存3,312

Logic Level Gate

30V

-

58 mOhm @ 4.9A, 10V

3V @ 250µA

34nC @ 10V

710pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

IPG20N06S4L11AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封裝: 8-PowerVDFN

庫存4,096

Logic Level Gate

60V

20A

11.2 mOhm @ 17A, 10V

2.2V @ 28µA

53nC @ 10V

4020pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

IPG20N06S4L11ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封裝: 8-PowerVDFN

庫存7,744

Logic Level Gate

60V

20A

11.2 mOhm @ 17A, 10V

2.2V @ 28µA

53nC @ 10V

4020pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

AUIRF7379QTR

Infineon Technologies

MOSFET N/P-CH 30V 5.8A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,696

Logic Level Gate

30V

5.8A, 4.3A

45 mOhm @ 5.8A, 10V

3V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AUIRF7304QTR

Infineon Technologies

MOSFET 2P-CH 20V 4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

封裝: 8-SOIC

庫存4,480

Logic Level Gate

20V

4.3A

90 mOhm @ 2.2A, 4.5V

1.5V @ 250µA

22nC @ 4.5V

610pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

AUIRF7303QTR

Infineon Technologies

MOSFET 2N-CH 30V 5.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

封裝: 8-SOIC

庫存3,520

Logic Level Gate

30V

5.3A

50 mOhm @ 2.7A, 10V

3V @ 100µA

21nC @ 10V

515pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC

8-SO

IPG20N04S4L07AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封裝: 8-PowerVDFN

庫存2,752

Logic Level Gate

40V

20A

7.2 mOhm @ 17A, 10V

2.2V @ 30µA

50nC @ 10V

3980pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

BSO203PHXUMA1

Infineon Technologies

MOSFET 2P-CH 20V 7A 8DSO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,256

Logic Level Gate

20V

7A

21 mOhm @ 8.2A, 4.5V

1.2V @ 100µA

39nC @ 4.5V

3750pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

P-DSO-8

IPG20N06S415ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封裝: 8-PowerVDFN

庫存3,808

Standard

60V

20A

15.5 mOhm @ 17A, 10V

4V @ 20µA

29nC @ 10V

2260pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

IRF7328PBF

Infineon Technologies

MOSFET 2P-CH 30V 8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存15,120

Logic Level Gate

30V

8A

21 mOhm @ 8A, 10V

2.5V @ 250µA

78nC @ 10V

2675pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSC0923NDIATMA1

Infineon Technologies

MOSFET 2N-CH 30V 17A/32A TISON8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封裝: 8-PowerTDFN

庫存5,408

Logic Level Gate, 4.5V Drive

30V

17A, 32A

5 mOhm @ 20A, 10V

2V @ 250µA

10nC @ 4.5V

1160pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

BSC0924NDIATMA1

Infineon Technologies

MOSFET 2N-CH 30V 17A/32A TISON8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封裝: 8-PowerTDFN

庫存7,456

Logic Level Gate, 4.5V Drive

30V

17A, 32A

5 mOhm @ 20A, 10V

2V @ 250µA

10nC @ 4.5V

1160pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

AUIRF9952QTR

Infineon Technologies

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,240

Logic Level Gate

30V

3.5A, 2.3A

100 mOhm @ 2.2A, 10V

3V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IPG20N06S4L14AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封裝: 8-PowerVDFN

庫存7,104

Logic Level Gate

60V

20A

13.7 mOhm @ 17A, 10V

2.2V @ 20µA

39nC @ 10V

2890pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

IPG20N06S4L14ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封裝: 8-PowerVDFN

庫存6,944

Logic Level Gate

60V

20A

13.7 mOhm @ 17A, 10V

2.2V @ 20µA

39nC @ 10V

2890pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

IPG20N04S4L08AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Power - Max: 54W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封裝: 8-PowerVDFN

庫存6,992

Logic Level Gate

40V

20A

8.2 mOhm @ 17A, 10V

2.2V @ 22µA

39nC @ 10V

3050pF @ 25V

54W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

IPG20N10S436AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Power - Max: 43W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封裝: 8-PowerVDFN

庫存7,920

Standard

100V

20A

36 mOhm @ 17A, 10V

3.5V @ 16µA

15nC @ 10V

990pF @ 25V

43W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

IPG20N06S2L50AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Power - Max: 51W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封裝: 8-PowerVDFN

庫存7,376

Logic Level Gate

55V

20A

50 mOhm @ 15A, 10V

2V @ 19µA

17nC @ 10V

560pF @ 25V

51W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

BSZ215CHXTMA1

Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL

封裝: 8-PowerTDFN

庫存4,944

Logic Level Gate, 2.5V Drive

20V

5.1A, 3.2A

55 mOhm @ 5.1A, 4.5V

1.4V @ 110µA

2.8nC @ 4.5V

419pF @ 10V

2.5W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PG-TSDSON-8-FL