頁 3 - Infineon Technologies 產品 - 電晶體 - 雙極 (BJT) - 單、預偏壓

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR 108L3 E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSLP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 170MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封裝: SC-101, SOT-883	庫存7,232	100mA	50V	2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	170MHz	250mW	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BCR 108F E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSFP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 170MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	封裝: SOT-723	庫存5,440	100mA	50V	2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	170MHz	250mW	Surface Mount	SOT-723	PG-TSFP-3
BCR 108 B6327	Infineon Technologies	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 170MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存2,144	100mA	50V	2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	170MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR 103T E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 140MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封裝: SC-75, SOT-416	庫存3,360	100mA	50V	2.2k	2.2k	20 @ 20mA, 5V	300mV @ 1mA, 20mA	100nA (ICBO)	140MHz	250mW	Surface Mount	SC-75, SOT-416	PG-SC-75
BCR 103L3 E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSLP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 140MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封裝: SC-101, SOT-883	庫存7,808	100mA	50V	2.2k	2.2k	20 @ 20mA, 5V	300mV @ 1mA, 20mA	100nA (ICBO)	140MHz	250mW	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BCR 103F E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSFP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 140MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	封裝: SOT-723	庫存3,520	100mA	50V	2.2k	2.2k	20 @ 20mA, 5V	300mV @ 1mA, 20mA	100nA (ICBO)	140MHz	250mW	Surface Mount	SOT-723	PG-TSFP-3
BCR 101T E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封裝: SC-75, SOT-416	庫存2,928	50mA	50V	100k	100k	70 @ 5mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	100MHz	250mW	Surface Mount	SC-75, SOT-416	PG-SC-75
BCR 101L3 E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSLP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封裝: SC-101, SOT-883	庫存2,416	50mA	50V	100k	100k	70 @ 5mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	100MHz	250mW	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BCR583E6327HTSA1	Infineon Technologies	TRANS PREBIAS PNP 0.33W SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存6,992	500mA	50V	10k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	150MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR573E6327HTSA1	Infineon Technologies	TRANS PREBIAS PNP 0.33W SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存2,224	500mA	50V	1k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	150MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR521E6327HTSA1	Infineon Technologies	TRANS PREBIAS NPN 0.33W SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存2,784	500mA	50V	1k	1k	20 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR573E6433HTMA1	Infineon Technologies	TRANS PREBIAS PNP 300MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,536	500mA	50V	1k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	150MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR555E6433HTMA1	Infineon Technologies	TRANS PREBIAS PNP 300MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,056	500mA	50V	2.2k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	150MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR553E6327HTSA1	Infineon Technologies	TRANS PREBIAS PNP 300MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存6,880	500mA	50V	2.2k	2.2k	40 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	150MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR523E6433HTMA1	Infineon Technologies	TRANS PREBIAS NPN 300MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存4,576	500mA	50V	1k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR142WH6327XTSA1	Infineon Technologies	TRANS PREBIAS NPN 250MW SOT323-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存5,616	100mA	50V	22k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	150MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR148E6433HTMA1	Infineon Technologies	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,136	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	100MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR185WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 0.25W SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存6,608	100mA	50V	10k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR198WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存7,792	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR196WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存6,736	70mA	50V	47k	22k	50 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	150MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR192WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存5,280	100mA	50V	22k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR191WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存7,136	100mA	50V	22k	22k	50 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR183WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存2,224	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR169WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存2,448	100mA	50V	4.7k	-	120 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR166WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存3,216	100mA	50V	4.7k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	160MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR158WH6327XTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存3,216	100mA	50V	2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR148WH6327XTSA1	Infineon Technologies	TRANS PREBIAS NPN 250MW SOT323-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存3,632	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	100MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR141WH6327XTSA1	Infineon Technologies	TRANS PREBIAS NPN 250MW SOT323-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存5,408	100mA	50V	22k	22k	50 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	130MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3

BCR 108L3 E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 170MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封裝: SC-101, SOT-883

庫存7,232

100mA

50V

2.2k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

170MHz

250mW

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BCR 108F E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 170MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

封裝: SOT-723

庫存5,440

100mA

50V

2.2k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

170MHz

250mW

Surface Mount

SOT-723

PG-TSFP-3

BCR 108 B6327

Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 170MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存2,144

100mA

50V

2.2k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

170MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR 103T E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 140MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封裝: SC-75, SOT-416

庫存3,360

100mA

50V

2.2k

20 @ 20mA, 5V

300mV @ 1mA, 20mA

100nA (ICBO)

140MHz

250mW

Surface Mount

SC-75, SOT-416

PG-SC-75

BCR 103L3 E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 140MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封裝: SC-101, SOT-883

庫存7,808

100mA

50V

2.2k

20 @ 20mA, 5V

300mV @ 1mA, 20mA

100nA (ICBO)

140MHz

250mW

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BCR 103F E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 140MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

封裝: SOT-723

庫存3,520

100mA

50V

2.2k

20 @ 20mA, 5V

300mV @ 1mA, 20mA

100nA (ICBO)

140MHz

250mW

Surface Mount

SOT-723

PG-TSFP-3

BCR 101T E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封裝: SC-75, SOT-416

庫存2,928

50mA

50V

100k

70 @ 5mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

100MHz

250mW

Surface Mount

SC-75, SOT-416

PG-SC-75

BCR 101L3 E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封裝: SC-101, SOT-883

庫存2,416

50mA

50V

100k

70 @ 5mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

100MHz

250mW

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BCR583E6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 0.33W SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存6,992

500mA

50V

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

150MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR573E6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 0.33W SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存2,224

500mA

50V

1k

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

150MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR521E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 0.33W SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存2,784

500mA

50V

1k

20 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR573E6433HTMA1

Infineon Technologies

TRANS PREBIAS PNP 300MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,536

500mA

50V

1k

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

150MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR555E6433HTMA1

Infineon Technologies

TRANS PREBIAS PNP 300MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,056

500mA

50V

2.2k

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

150MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR553E6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 300MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存6,880

500mA

50V

2.2k

40 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

150MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR523E6433HTMA1

Infineon Technologies

TRANS PREBIAS NPN 300MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存4,576

500mA

50V

1k

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR142WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存5,616

100mA

50V

22k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

150MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR148E6433HTMA1

Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,136

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

100MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR185WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 0.25W SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存6,608

100mA

50V

10k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR198WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存7,792

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

190MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR196WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存6,736

70mA

50V

47k

22k

50 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

150MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR192WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存5,280

100mA

50V

22k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR191WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存7,136

100mA

50V

22k

50 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR183WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存2,224

100mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR169WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存2,448

100mA

50V

4.7k

-

120 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR166WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 160MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存3,216

100mA

50V

4.7k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

160MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR158WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存3,216

100mA

50V

2.2k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR148WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存3,632

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

100MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR141WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 130MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存5,408

100mA

50V

22k

50 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

130MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3