頁 55 - GeneSiC Semiconductor 產品

零件編號	製造商	描述	封裝	庫存
MBRH200100	GeneSiC Semiconductor	DIODE MODULE 100V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	封裝: D-67	庫存3,872
MBR8020R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 20V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-203AB, DO-5, Stud	庫存6,352
1N5830	GeneSiC Semiconductor	DIODE SCHOTTKY 25V 25A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-203AA, DO-4, Stud	庫存13,860
FR40M05	GeneSiC Semiconductor	DIODE GEN PURP 1KV 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封裝: DO-203AB, DO-5, Stud	庫存4,400
FR20B02	GeneSiC Semiconductor	DIODE GEN PURP 100V 20A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封裝: DO-203AB, DO-5, Stud	庫存4,368
FR16BR05	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-203AA, DO-4, Stud	庫存7,696
FR16B02	GeneSiC Semiconductor	DIODE GEN PURP 100V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-203AA, DO-4, Stud	庫存3,888
FR12K05	GeneSiC Semiconductor	DIODE GEN PURP 800V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-203AA, DO-4, Stud	庫存7,600
S25GR	GeneSiC Semiconductor	DIODE GEN REV 400V 25A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-203AA, DO-4, Stud	庫存5,808
MSRTA600120(A)	GeneSiC Semiconductor	DIODE MODULE 1.2KV 600A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 600A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: 3-SMD Module Supplier Device Package: Three Tower	封裝: 3-SMD Module	庫存5,232
MURT40005R	GeneSiC Semiconductor	DIODE MODULE 50V 400A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封裝: Three Tower	庫存7,440
MURT40005	GeneSiC Semiconductor	DIODE MODULE 50V 400A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封裝: Three Tower	庫存6,544
MSRTA400160(A)	GeneSiC Semiconductor	DIODE MODULE 1.6KV 400A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封裝: Three Tower	庫存7,936
MSRTA300160(A)D	GeneSiC Semiconductor	DIODE MODULE 1.6KV 300A 3TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封裝: Three Tower	庫存7,792
MUR30060CT	GeneSiC Semiconductor	DIODE MODULE 600V 300A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封裝: Twin Tower	庫存7,968
MUR10010CT	GeneSiC Semiconductor	DIODE MODULE 100V 100A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	封裝: Twin Tower	庫存6,000
FST12035	GeneSiC Semiconductor	DIODE MODULE 35V 120A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	封裝: TO-249AB	庫存6,192
FST10060	GeneSiC Semiconductor	DIODE MODULE 60V 100A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	封裝: TO-249AB	庫存6,256
MBRT120200	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 60A 3 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 920mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封裝: Three Tower	庫存6,480
MBRT12030	GeneSiC Semiconductor	DIODE MODULE 30V 120A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封裝: Three Tower	庫存3,216
MBR2X100A100	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 100A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	封裝: SOT-227-4, miniBLOC	庫存6,800
GB10SLT12-247D	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 12A TO247D Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 12A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存6,732
BR68	GeneSiC Semiconductor	DIODE BRIDGE 800V 6A BR-6 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-6 Supplier Device Package: BR-6	封裝: 4-Square, BR-6	庫存2,100
KBL610G	GeneSiC Semiconductor	DIODE BRIDGE 1000V 6A KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	封裝: 4-SIP, KBL	庫存5,280
MSRT25060A	GeneSiC Semiconductor	DIODE MODULE GP 600V 250A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 250A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 250 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	封裝: -	Request a Quote
GC10MPS12-252	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 50A TO252-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 660pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote
MSRTA600120A	GeneSiC Semiconductor	DIODE MODULE GP 1.2KV 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 600A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: 3-SMD Module Supplier Device Package: Three Tower	封裝: -	Request a Quote
GE12MPS06A	GeneSiC Semiconductor	650V 12A TO-220-2 SIC SCHOTTKY M Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 12 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: TO-220-2 Supplier Device Package: TO-220-2	封裝: -	Request a Quote

MBRH200100

GeneSiC Semiconductor

DIODE MODULE 100V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

封裝: D-67

庫存3,872

MBR8020R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-203AB, DO-5, Stud

庫存6,352

1N5830

GeneSiC Semiconductor

DIODE SCHOTTKY 25V 25A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-203AA, DO-4, Stud

庫存13,860

FR40M05

GeneSiC Semiconductor

DIODE GEN PURP 1KV 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封裝: DO-203AB, DO-5, Stud

庫存4,400

FR20B02

GeneSiC Semiconductor

DIODE GEN PURP 100V 20A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封裝: DO-203AB, DO-5, Stud

庫存4,368

FR16BR05

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-203AA, DO-4, Stud

庫存7,696

FR16B02

GeneSiC Semiconductor

DIODE GEN PURP 100V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-203AA, DO-4, Stud

庫存3,888

FR12K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-203AA, DO-4, Stud

庫存7,600

S25GR

GeneSiC Semiconductor

DIODE GEN REV 400V 25A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-203AA, DO-4, Stud

庫存5,808

MSRTA600120(A)

GeneSiC Semiconductor

DIODE MODULE 1.2KV 600A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 600A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: 3-SMD Module
Supplier Device Package: Three Tower

封裝: 3-SMD Module

庫存5,232

MURT40005R

GeneSiC Semiconductor

DIODE MODULE 50V 400A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封裝: Three Tower

庫存7,440

MURT40005

GeneSiC Semiconductor

DIODE MODULE 50V 400A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封裝: Three Tower

庫存6,544

MSRTA400160(A)

GeneSiC Semiconductor

DIODE MODULE 1.6KV 400A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封裝: Three Tower

庫存7,936

MSRTA300160(A)D

GeneSiC Semiconductor

DIODE MODULE 1.6KV 300A 3TOWER

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封裝: Three Tower

庫存7,792

MUR30060CT

GeneSiC Semiconductor

DIODE MODULE 600V 300A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封裝: Twin Tower

庫存7,968

MUR10010CT

GeneSiC Semiconductor

DIODE MODULE 100V 100A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

封裝: Twin Tower

庫存6,000

FST12035

GeneSiC Semiconductor

DIODE MODULE 35V 120A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

封裝: TO-249AB

庫存6,192

FST10060

GeneSiC Semiconductor

DIODE MODULE 60V 100A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

封裝: TO-249AB

庫存6,256

MBRT120200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 60A 3 TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封裝: Three Tower

庫存6,480

MBRT12030

GeneSiC Semiconductor

DIODE MODULE 30V 120A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封裝: Three Tower

庫存3,216

MBR2X100A100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 100A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

封裝: SOT-227-4, miniBLOC

庫存6,800

GB10SLT12-247D

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 12A TO247D

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 12A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存6,732

BR68

GeneSiC Semiconductor

DIODE BRIDGE 800V 6A BR-6

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-6
Supplier Device Package: BR-6

封裝: 4-Square, BR-6

庫存2,100

KBL610G

GeneSiC Semiconductor

DIODE BRIDGE 1000V 6A KBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Supplier Device Package: KBL

封裝: 4-SIP, KBL

庫存5,280

MSRT25060A

GeneSiC Semiconductor

DIODE MODULE GP 600V 250A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io) (per Diode): 250A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 250 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

封裝: -

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GC10MPS12-252

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 50A TO252-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

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MSRTA600120A

GeneSiC Semiconductor

DIODE MODULE GP 1.2KV 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io) (per Diode): 600A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: 3-SMD Module
Supplier Device Package: Three Tower

封裝: -

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GE12MPS06A

GeneSiC Semiconductor

650V 12A TO-220-2 SIC SCHOTTKY M

Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 650V
Current - Max: 12 A
Capacitance @ Vr, F: -
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: -
Package / Case: TO-220-2
Supplier Device Package: TO-220-2

封裝: -

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