頁 55 - Fairchild/ON Semiconductor 產品 - 電晶體 - FET、MOSFET - 單 | 黑森爾電子
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Fairchild/ON Semiconductor 產品 - 電晶體 - FET、MOSFET - 單

記錄 3,066
頁  55/110
圖片
零件編號
製造商
描述
封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FCP9N60N_F102
Fairchild/ON Semiconductor

FCP9N60N IN TO220 F102 T/F OPTIO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存6,832
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
4V @ 250µA
29nC @ 10V
1240pF @ 100V
±30V
-
83.3W (Tc)
385 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FCPF13N60NT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 13A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 33.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 258 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存9,372
MOSFET (Metal Oxide)
600V
13A (Tc)
10V
4V @ 250µA
39.5nC @ 10V
1765pF @ 100V
±30V
-
33.8W (Tc)
258 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3 (Y-Forming)
TO-220-3 Full Pack
FDPF51N25RDTU
Fairchild/ON Semiconductor

UNIFET 250V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存5,680
MOSFET (Metal Oxide)
250V
51A (Tc)
10V
5V @ 250µA
70nC @ 10V
3410pF @ 25V
±30V
-
38W (Tc)
60 mOhm @ 25.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FDP032N08_F102
Fairchild/ON Semiconductor

PT3 MV 75V 3.2MOHM FOR DELTA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15160pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存5,616
MOSFET (Metal Oxide)
75V
120A (Tc)
10V
4.5V @ 250µA
220nC @ 10V
15160pF @ 25V
±20V
-
375W (Tc)
3.2 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
hot IRFS450B
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9.6A TO-3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: SC-94
封裝: SC-94
庫存9,156
MOSFET (Metal Oxide)
500V
9.6A (Tc)
10V
4V @ 250µA
113nC @ 10V
3800pF @ 25V
±30V
-
96W (Tc)
390 mOhm @ 4.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
SC-94
hot FDB024N08BL7
Fairchild/ON Semiconductor

MOSFET N-CH 80V 120A D2PAK7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13530pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 246W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
封裝: TO-263-7, D2Pak (6 Leads + Tab)
庫存22,800
MOSFET (Metal Oxide)
80V
120A (Tc)
10V
4.5V @ 250µA
178nC @ 10V
13530pF @ 40V
±20V
-
246W (Tc)
2.4 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263)
TO-263-7, D2Pak (6 Leads + Tab)
FCPF250N65S3L1
Fairchild/ON Semiconductor

SUPERFET3 650V 250 MOHM, TO220F

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存6,400
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDMS2D5N08C
Fairchild/ON Semiconductor

PTNG 80V/20V N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存6,528
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFP150A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 43A TO-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 193W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 21.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
封裝: TO-3P-3, SC-65-3
庫存6,912
MOSFET (Metal Oxide)
100V
43A (Tc)
10V
4V @ 250µA
97nC @ 10V
2270pF @ 25V
-
-
193W (Tc)
40 mOhm @ 21.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
FDMS86202ET120
Fairchild/ON Semiconductor

MOSFET N-CH 120V POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4585pF @ 60V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存3,712
MOSFET (Metal Oxide)
120V
13.5A (Ta), 102A (Tc)
6V, 10V
4V @ 250µA
64nC @ 10V
4585pF @ 60V
±20V
-
3.3W (Ta), 187W (Tc)
7.2 mOhm @ 13.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
Power56
8-PowerTDFN
FDP047N08_F102
Fairchild/ON Semiconductor

PT3 75V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9415pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 268W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存5,328
MOSFET (Metal Oxide)
75V
164A (Tc)
10V
4.5V @ 250µA
152nC @ 10V
9415pF @ 25V
±20V
-
268W (Tc)
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
FCB199N65S3
Fairchild/ON Semiconductor

SUPERFET3 650V 199MOHM D2PAK PKG

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存5,152
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot HUF75639G3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存498,828
MOSFET (Metal Oxide)
100V
56A (Tc)
10V
4V @ 250µA
130nC @ 20V
2000pF @ 25V
±20V
-
200W (Tc)
25 mOhm @ 56A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
hot FDP8870
Fairchild/ON Semiconductor

MOSFET N-CH 30V 156A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存167,028
MOSFET (Metal Oxide)
30V
19A (Ta), 156A (Tc)
4.5V, 10V
2.5V @ 250µA
132nC @ 10V
5200pF @ 15V
±20V
-
160W (Tc)
4.1 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FCP190N65S3
Fairchild/ON Semiconductor

SUPERFET3 650V 190 MOHM, TO220F

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存7,968
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FDP047N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 120A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15265pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存267,804
MOSFET (Metal Oxide)
100V
120A (Tc)
10V
4.5V @ 250µA
210nC @ 10V
15265pF @ 25V
±20V
-
375W (Tc)
4.7 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FQB25N33TM_F085
Fairchild/ON Semiconductor

MOSFET N-CH 330V 25A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 330V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,624
MOSFET (Metal Oxide)
330V
25A (Tc)
10V
5V @ 250µA
75nC @ 15V
2010pF @ 25V
±30V
-
3.1W (Ta), 250W (Tc)
230 mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCP11N60N_F102
Fairchild/ON Semiconductor

FCP11N60N IN TO220 F102 T/F OPTI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存6,000
MOSFET (Metal Oxide)
600V
10.8A (Tc)
10V
4V @ 250µA
35.6nC @ 10V
1505pF @ 100V
±30V
-
94W (Tc)
299 mOhm @ 5.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FCPF11N60T
Fairchild/ON Semiconductor

MOSFET N-CH 600V 11A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存5,472
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
5V @ 250µA
52nC @ 10V
1490pF @ 25V
±30V
-
36W (Tc)
380 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FDB9406L_F085
Fairchild/ON Semiconductor

N-CHANNEL POWERTRENCH MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存4,208
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FDB8860
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12585pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 254W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存15,120
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
3V @ 250µA
214nC @ 10V
12585pF @ 15V
±20V
-
254W (Tc)
2.3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS8350LET40
Fairchild/ON Semiconductor

PT8 40V/20V NCH POWERTRENCH MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 219nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16590pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 47A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存5,824
MOSFET (Metal Oxide)
40V
49A (Ta), 300A (Tc)
4.5V, 10V
3V @ 250µA
219nC @ 10V
16590pF @ 20V
±20V
-
3.33W (Ta), 125W (Tc)
0.85 mOhm @ 47A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
Power56
8-PowerTDFN
FDPF39N20TLDTU
Fairchild/ON Semiconductor

UNIFET 200V LDTU FORM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存3,088
MOSFET (Metal Oxide)
200V
39A (Tc)
10V
5V @ 250µA
49nC @ 10V
2130pF @ 25V
±30V
-
37W (Tc)
66 mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
NTMFS10N7D2C
Fairchild/ON Semiconductor

PTNG 100/20V NCH POWER TRENCH MO

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存7,328
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDB9406_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 110A TO263AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7710pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tj)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,472
MOSFET (Metal Oxide)
40V
110A (Tc)
10V
4V @ 250µA
138nC @ 10V
7710pF @ 25V
±20V
-
176W (Tj)
1.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FCPF7N60NT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 6.8A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存7,056
MOSFET (Metal Oxide)
600V
6.8A (Tc)
10V
4V @ 250µA
35.6nC @ 10V
960pF @ 100V
±30V
-
30.5W (Tc)
520 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FCPF190N65S3L1
Fairchild/ON Semiconductor

SUPERFET3 650V 190 MOHM, TO220F

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存5,648
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FCP11N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 10.8A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存4,416
MOSFET (Metal Oxide)
600V
10.8A (Tc)
10V
4V @ 250µA
35.6nC @ 10V
1505pF @ 100V
±30V
-
94W (Tc)
299 mOhm @ 5.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3