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Diodes Incorporated 產品

記錄 22,098
頁  87/790
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WT325BI0030.000000
Diodes Incorporated

OSC TCXO 30.000MHZ CLP SNWV SMD

  • Type: TCXO
  • Frequency: 30MHz
  • Function: -
  • Output: Clipped Sine Wave
  • Voltage - Supply: 3V
  • Frequency Stability: ±2ppm
  • Operating Temperature: -30°C ~ 85°C
  • Current - Supply (Max): 2mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
  • Height - Seated (Max): 0.047" (1.20mm)
封裝: 4-SMD, No Lead
庫存5,904
GC1200052
Diodes Incorporated

CRYSTAL 12.0000MHZ 18PF SMD

  • Type: MHz Crystal
  • Frequency: 12MHz
  • Frequency Stability: ±20ppm
  • Frequency Tolerance: ±20ppm
  • Load Capacitance: 18pF
  • ESR (Equivalent Series Resistance): 60 Ohm
  • Operating Mode: Fundamental
  • Operating Temperature: -40°C ~ 85°C
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: HC49/US
  • Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
  • Height - Seated (Max): 0.165" (4.20mm)
封裝: HC49/US
庫存4,158
DMN90H8D5HCT
Diodes Incorporated

MOSFET BVDSS: >800V TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存2,480
DMTH6010SK3-13
Diodes Incorporated

MOSFET N-CH 60V 16.3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,824
DMPH6050SK3-13
Diodes Incorporated

MOSFET P-CH 60V 7.2A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存25,302
DMTH4007SPDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V POWERDI506

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14.2A
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
  • Power - Max: 2.6W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
封裝: 8-PowerTDFN
庫存5,952
hot ZXTN2011ZTA
Diodes Incorporated

TRANS NPN 100V 4.5A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 195mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 2.1W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封裝: TO-243AA
庫存69,204
DDTA143ZKA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,640
hot DDTA114GKA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存288,000
DDTA143XCA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存58,116
AP1117T33G-U
Diodes Incorporated

IC REG LINEAR 3.3V 1A TO220-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 18V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.4V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 60dB (180Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存6,912
APX803S00-31SR-7
Diodes Incorporated

RESET GENERATOR SOT23

  • Type: Simple Reset/Power-On Reset
  • Number of Voltages Monitored: 1
  • Output: Open Drain or Open Collector
  • Reset: Active Low
  • Reset Timeout: 1 ms Minimum
  • Voltage - Threshold: 3.08V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,952
AP9214LA-AI-HSBR-7
Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

  • Function: Battery Protection
  • Battery Chemistry: Lithium-Ion/Polymer
  • Number of Cells: 1
  • Fault Protection: Over Current, Over Voltage, Short Circuit
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2535-6
封裝: 6-UDFN Exposed Pad
庫存3,312
hot PI5C3245S
Diodes Incorporated

IC 8BIT 2PORT BUS SWITCH 20SOIC

  • Type: Bus Switch
  • Circuit: 8 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
封裝: 20-SOIC (0.295", 7.50mm Width)
庫存4,752
PI3B3245SE
Diodes Incorporated

BUS SWITCH 3V SO-20

  • Type: -
  • Circuit: -
  • Independent Circuits: -
  • Current - Output High, Low: -
  • Voltage Supply Source: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,552
74AUP1G14FX4-7
Diodes Incorporated

IC INV SCHMITT-TRIG DFN1410-6

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: Schmitt Trigger
  • Voltage - Supply: 0.8 V ~ 3.6 V
  • Current - Quiescent (Max): 0.5µA
  • Current - Output High, Low: 4mA, 4mA
  • Logic Level - Low: 0.15 V ~ 0.88 V
  • Logic Level - High: 0.65 V ~ 2.32 V
  • Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1409-6
  • Package / Case: 6-XFDFN
封裝: 6-XFDFN
庫存4,944
PI74FCT2244ATS
Diodes Incorporated

IC BUFF/DVR DUAL N-INV 20SOIC

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 15mA, 64mA
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
封裝: 20-SOIC (0.295", 7.50mm Width)
庫存7,568
SMBJ130A-13
Diodes Incorporated

TVS DIODE 130VWM 209VC SMB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 130V
  • Voltage - Breakdown (Min): 144V
  • Voltage - Clamping (Max) @ Ipp: 209V
  • Current - Peak Pulse (10/1000µs): 2.9A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
封裝: DO-214AA, SMB
庫存4,032
D5V0F4U5P5-7
Diodes Incorporated

TVS DIODE 5.5VWM 12.5VC SOT953

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5.5V (Max)
  • Voltage - Breakdown (Min): 6V
  • Voltage - Clamping (Max) @ Ipp: 12.5V
  • Current - Peak Pulse (10/1000µs): 2A (8/20µs)
  • Power - Peak Pulse: -
  • Power Line Protection: Yes
  • Applications: Automotive, HDMI
  • Capacitance @ Frequency: 0.5pF @ 1MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-953
  • Supplier Device Package: SOT-953
封裝: SOT-953
庫存3,006
PI3EQX1004B1ZHEX
Diodes Incorporated

USB3 EQX V-QFN3590-42

  • Type: Buffer, ReDriver
  • Applications: USB 3.0
  • Input: CML
  • Output: CML
  • Data Rate (Max): 10Gbps
  • Number of Channels: 4
  • Delay Time: -
  • Signal Conditioning: Input Equalization
  • Capacitance - Input: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Current - Supply: -
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: -
  • Package / Case: 42-VFQFN Exposed Pad
  • Supplier Device Package: 42-TQFN (9x3.5)
封裝: 42-VFQFN Exposed Pad
庫存4,512
AP9101CK-BFTRG1
Diodes Incorporated

MULTICELL BATT MANAGER SOT25

  • Function: Battery Protection
  • Battery Chemistry: Lithium Ion/Polymer
  • Number of Cells: 1
  • Fault Protection: Over Current, Over Voltage
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-25
封裝: SC-74A, SOT-753
庫存3,040
VN10LPSTZ
Diodes Incorporated

MOSFET VMOS N-CHAN TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: E-Line (TO-92 compatible)
  • Package / Case: E-Line-3, Formed Leads
封裝: -
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DMT68M8LFV-13
Diodes Incorporated

MOSFET N-CH 60V 54.1A PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
封裝: -
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AP7361EA-18ER-13
Diodes Incorporated

LDO CMOS HICURR SOT223 T&R 2.5K

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 1A
  • Current - Quiescent (Iq): 91 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Current Limit
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223R
封裝: -
庫存7,425
DMP2042UCP4-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DSN1010-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
  • Vgs (Max): -6V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DSN1010-4 (Type C)
  • Package / Case: 4-XFBGA
封裝: -
庫存8,880
DMN2024UFDF-7
Diodes Incorporated

MOSFET N-CH 20V 7.1A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封裝: -
庫存9,000
SDM02A30APS-7B
Diodes Incorporated

SCHOTTKY DIODE X1-DFN1006-2(TYPE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
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APX803L20-14W5-7
Diodes Incorporated

Reset Generator SOT25 T&R 3K

  • Type: Voltage Detector
  • Number of Voltages Monitored: 1
  • Output: Open Drain or Open Collector
  • Reset: Active Low
  • Reset Timeout: 143ms Minimum
  • Voltage - Threshold: 1.4V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-25
封裝: -
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