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Diodes Incorporated 產品

記錄 22,098
頁  80/790
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G43270025
Diodes Incorporated

CRYSTAL 32.768KHZ 12.5PF SMD

  • Type: kHz Crystal (Tuning Fork)
  • Frequency: 32.768kHz
  • Frequency Stability: -
  • Frequency Tolerance: ±20ppm
  • Load Capacitance: 12.5pF
  • ESR (Equivalent Series Resistance): 50 kOhm
  • Operating Mode: Fundamental
  • Operating Temperature: -40°C ~ 85°C
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOJ, 5.50mm pitch
  • Size / Dimension: 0.311" L x 0.150" W (7.90mm x 3.80mm)
  • Height - Seated (Max): 0.102" (2.60mm)
封裝: 4-SOJ, 5.50mm pitch
庫存4,338
DMN10H220LE-13
Diodes Incorporated

MOSFET N-CH 100V 2.3A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 401pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存3,664
DSS5320T-7
Diodes Incorporated

TRANS PNP 20V 2A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: TO-236-3, SC-59, SOT-23-3
庫存4,368
hot BC847AW-7-F
Diodes Incorporated

TRANS NPN 45V 0.1A SC70-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封裝: SC-70, SOT-323
庫存108,000
ZMV832BTC
Diodes Incorporated

DIODE VARACTOR 25V SOD323

  • Capacitance @ Vr, F: 23.1pF @ 2V, 1MHz
  • Capacitance Ratio: 6.5
  • Capacitance Ratio Condition: C2/C20
  • Voltage - Peak Reverse (Max): 25V
  • Diode Type: Single
  • Q @ Vr, F: 200 @ 3V, 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
封裝: SC-76, SOD-323
庫存7,232
ZDC833ATC
Diodes Incorporated

DIODE VAR CAP DUAL 33PF SOT23-3

  • Capacitance @ Vr, F: 36.3pF @ 2V, 1MHz
  • Capacitance Ratio: 6.5
  • Capacitance Ratio Condition: C2/C20
  • Voltage - Peak Reverse (Max): 25V
  • Diode Type: 1 Pair Common Cathode
  • Q @ Vr, F: 200 @ 3V, 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存7,120
hot KBJ608G
Diodes Incorporated

RECT BRIDGE GPP 6A 800V KBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
封裝: 4-SIP, KBJ
庫存22,920
hot AP7333-25SRG-7
Diodes Incorporated

IC REG LINEAR 2.5V 300MA SOT23R

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.55V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 75µA ~ 85µA
  • PSRR: 65dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT23R
封裝: TO-236-3, SC-59, SOT-23-3
庫存242,400
APX803S00-31SA-7
Diodes Incorporated

RESET GENERATOR SOT23

  • Type: Simple Reset/Power-On Reset
  • Number of Voltages Monitored: 1
  • Output: Open Drain or Open Collector
  • Reset: Active Low
  • Reset Timeout: 1 ms Minimum
  • Voltage - Threshold: 3.08V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,056
APX803L20-19SA-7
Diodes Incorporated

RESET GENERATOR SOT23

  • Type: Simple Reset/Power-On Reset
  • Number of Voltages Monitored: 1
  • Output: Open Drain or Open Collector
  • Reset: Active Low
  • Reset Timeout: 143 ms Minimum
  • Voltage - Threshold: 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,600
AP9101CK6-CGTRG1
Diodes Incorporated

MULTICELL BATT MANAGER SOT26

  • Function: -
  • Battery Chemistry: -
  • Number of Cells: -
  • Fault Protection: -
  • Interface: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,192
hot AUR9807DIGD
Diodes Incorporated

IC BATT CHRGR LI-ION SGL 20QFN

  • Battery Chemistry: Lithium-Ion
  • Number of Cells: 1
  • Current - Charging: Constant - Programmable
  • Programmable Features: Timer
  • Fault Protection: Over Temperature, Over Voltage, Reverse Current, Short Circuit
  • Charge Current - Max: 1.5A
  • Battery Pack Voltage: 4.2V
  • Voltage - Supply (Max): 5.5V
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 20-WFQFN Exposed Pad
  • Supplier Device Package: 20-QFN (4.5x3.5)
封裝: 20-WFQFN Exposed Pad
庫存58,080
PI4MSD5V9545CLEX
Diodes Incorporated

IC BUS SWITCH 4CH 20TSSOP

  • Type: Bus Switch
  • Circuit: 2 x 1:4
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,520
hot PAM8902AZER
Diodes Incorporated

IC AMP AUD 30VPP CLASS D 16WCSP

  • Type: Class D
  • Output Type: 1-Channel (Mono)
  • Max Output Power x Channels @ Load: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Features: Short-Circuit and Thermal Protection
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Supplier Device Package: 16-CSP (1.95x1.95)
  • Package / Case: 16-WFBGA, WLCSP
封裝: 16-WFBGA, WLCSP
庫存108,000
PI6C22409-1HWE
Diodes Incorporated

IC ZERO DELY CLK BUFF 1:9 16SOIC

  • Type: -
  • PLL: Yes with Bypass
  • Input: TTL
  • Output: TTL
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:9
  • Differential - Input:Output: No/No
  • Frequency - Max: 220MHz
  • Divider/Multiplier: No/No
  • Voltage - Supply: 2.375 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.154", 3.90mm Width)
庫存5,088
SMCJ17CA-13
Diodes Incorporated

TVS DIODE 17VWM 27.6VC SMC

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 17V
  • Voltage - Breakdown (Min): 18.9V
  • Voltage - Clamping (Max) @ Ipp: 27.6V
  • Current - Peak Pulse (10/1000µs): 53.3A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
封裝: DO-214AB, SMC
庫存7,776
ATS276H-PG-B-B
Diodes Incorporated

MAGNETIC SWITCH LATCH 4SDIP

  • Function: Latch
  • Technology: Hall Effect
  • Polarization: Unidirectional
  • Sensing Range: 7mT Trip, -7mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 3.5 V ~ 20 V
  • Current - Supply (Max): 25mA
  • Current - Output (Max): -
  • Output Type: Open Collector
  • Features: -
  • Operating Temperature: -20°C ~ 85°C
  • Package / Case: 4-SIP
  • Supplier Device Package: 4-SDIP
封裝: 4-SIP
庫存4,464
PT7C6035ALC-5GWF
Diodes Incorporated

XO CLOCK

  • Logic Type: -
  • Supply Voltage: -
  • Number of Bits: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,224
PT7M8216B25XZE
Diodes Incorporated

IC REG LINEAR 2.5V 300MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.18V @ 150mA (Typ)
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 65µA
  • Current - Supply (Max): -
  • PSRR: 75dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 4-UDFN (1x1)
封裝: 4-XDFN Exposed Pad
庫存5,008
PT7C4363BZEEX
Diodes Incorporated

REALTIMECLOCKI2C W-DFN2030-8

  • Type: Clock/Calendar
  • Features: Alarm, Leap Year, Square Wave Output
  • Memory Size: -
  • Time Format: HH:MM:SS (24 hr)
  • Date Format: YY-MM-DD-dd
  • Interface: I²C, 2-Wire Serial
  • Voltage - Supply: 1.3 V ~ 5.5 V
  • Voltage - Supply, Battery: -
  • Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
封裝: 8-WFDFN Exposed Pad
庫存6,224
DMN2310UWQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 450mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
封裝: -
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MJD44H11Q-13
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
  • Power - Max: 1.5 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
封裝: -
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DCX143ZU-13R-F
Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: -
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DMN3060LWQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
封裝: -
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DMTH45M5SFVWQ-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封裝: -
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DMT4001LPS-13
Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
封裝: -
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DMP3056LSDQ-13
Diodes Incorporated

MOSFET 2P-CH 30V 6.9A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: -
庫存166,182
DMTH4002SCTBQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V TO263 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
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